28 results about "Titanium silicide" patented technology

The invention discloses a diamond MOSFET device compatible with a CMOS ohmic contact process and a preparation method of the diamond MOSFET device. The preparation method comprises the steps that S1, a diamond substrate is selected, and an intrinsic diamond layer is grown on the diamond substrate in a homoepitaxial mode; s2, preparing a mask, and forming a boron-doped diamond layer in a source region and a drain region on the intrinsic diamond layer through boron ion implantation; s3, depositing a layer of Si film and a layer of Ti film on the surface of the sample; s4, performing two-step annealing on the sample to obtain ohmic contact formed by the boron-doped diamond layer, the boron-doped silicon layer and the titanium silicide layer; s5, removing the mask and the thin film above the mask; s6, preparing a terminal diamond surface layer; s7, preparing a passivation layer and windowing to form a source window and a drain window; and S8, preparing a gate electrode. According to the method, high-quality ohmic contact can be formed on the diamond through the gold-free process, the gold ion pollution risk is thoroughly avoided, and CMOS process compatibility is achieved.

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.

The invention discloses a positive electrode material, a preparation method thereof and a lithium ion battery, the positive electrode material comprises a lithium ion battery positive electrode material and an additive, the additive comprises a metal silicide, and the metal silicide comprises one or more of cerium silicide, tungsten silicide, titanium silicide, zirconium silicide, nickel silicide and manganese silicide. According to the invention, the metal silicide is adopted as the additive and directly forms the electrode material (such as the positive electrode material) with the positive electrode material of the lithium ion battery, so that the interface problem caused by contact between the positive electrode material and an electrolyte is solved, and compared with directional modification treatment such as coating or doping on the positive electrode material of the lithium ion battery, the application has wider applicability.

The invention discloses silicon carbide special ceramic and a preparation method thereof, and belongs to the technical field of silicon carbide ceramic. The preparation method comprises the following steps: mixing silicon carbide powder with rare earth coated PAN carbon fibers, titanium disilicide, titanium aluminum carbon powder, silicon hexaboride, hafnium carbide, tantalum carbide and a carbon source, adding a binder and a dispersant, carrying out ball milling to prepare slurry, carrying out compression molding to obtain a porous biscuit, and finally carrying out a two-step sintering process to prepare the silicon carbide special ceramic. According to the invention, the defects of low fracture toughness, low high-temperature strength and low oxidation resistance of a traditional reaction sintered silicon carbide material are overcome, and the prepared silicon carbide special ceramic has high hardness and toughness, is high in bending strength retention rate and excellent in oxidation resistance under the ultrahigh-temperature condition of 1400 DEG C, and can meet the application requirements of more working scenes.

The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S / D region; depositing a titanium silicide layer over the S / D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

The application discloses a kind of silicon carbide special ceramics and preparation method thereof, belong to silicon carbide ceramic technical field.The application mixes silicon carbide powder with rare earth coated PAN carbon fiber, titanium disilicide, titanium aluminum carbon powder, silicon hexaboride, hafnium carbide, tantalum carbide and carbon source, adds binder and dispersing agent ball milling to form slurry, then compaction forming is obtained Porous green body, finally through two-step sintering process is made silicon carbide special ceramics.The application overcomes the low fracture toughness of traditional reaction sintering silicon carbide material, the deficiency of high temperature strength and oxidation resistance, and the prepared silicon carbide special ceramics has high hardness and toughness, high bending strength retention rate under 1400 DEG C ultra-high temperature condition, excellent oxidation resistance, can satisfy the application demand of more working scene.

Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise i) a first PMOS epitaxial (pEPI) region of germanium and boron, ii) a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, iii) titanium silicide conductive contact material on the second pEPI region.

The invention provides a silicon-based negative electrode material with a three-layer structure and a preparation method thereof, the three-layer structure is composed of a core layer, a middle buffer layer and an outer layer, the core layer is silicon nanoparticles, the middle buffer layer is formed by compounding silicon nitride and titanium nitride, and the outer layer is a conductive carbon protection layer. The preparation method comprises the following steps: S1, uniformly mixing silicon powder, titanium hydride powder and a carbon source to obtain a mixture; s2, heating the mixture obtained in the step S1 in an inert atmosphere to obtain titanium disilicide; s3, calcining the titanium disilicide product obtained in S2 in an ammonia or nitrogen atmosphere to obtain a compound of silicon nitride and titanium nitride; and S4, carrying out carbonization treatment on the product obtained in S3 to obtain the silicon-based negative electrode material with a three-layer structure.

This circuit board comprises a ceramic substrate having silicon nitride as a main component, a conductive part that is formed of a conductive material and is connected to a semiconductor element, and a bonding part that contains titanium and bonds the ceramic substrate and the conductive part, wherein the bonding part contains titanium silicide particles, and the absolute maximum length of the titanium silicide particles is equal to or less than 5 μm.

Approaches for fabricating an integrated circuit structure including a titanium silicide material, and the resulting structures, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate, a gate electrode over the top and adjacent to the sidewalls of a portion of the semiconductor fin. A titanium silicide material is in direct contact with each of first and second epitaxial semiconductor source or drain structures at first and second sides of the gate electrode. The titanium silicide material is conformal with and hermetically sealing a non-flat topography of each of the first and second epitaxial semiconductor source or drain structures. The titanium silicide material has a total atomic composition including 95% or greater stoichiometric TiSi2.

The invention discloses an anti-erosion refractory material suitable for a dry quenching furnace and a preparation method of the anti-erosion refractory material. The refractory material comprises the following components in percentage by mass: 70-90% of silicon carbide, 3-5% of titanium disilicide, 5-25% of silicon nitride and 0.5-2% of zirconium silicate. The preparation method of the zirconium silicate comprises the following steps: adding a 1-3 mol / L silicate solution and a 1-3 mol / L zirconium salt solution into a mixed solution containing a 0.1-0.5 mol / L mineralizer and a 0.05-0.2 mol / L complexing agent to form a reaction system, carrying out a reaction, and collecting insoluble substances after the reaction is finished; the silicon carbide, the titanium disilicide and the silicon nitride are used as main components of the refractory material, the zirconium silicate with high melting point, high thermal stability, high chemical stability and high thermal shock resistance is used as an auxiliary material, and the introduction of the zirconium silicate can reduce the nitridation temperature of silicon generated by decomposition of the titanium disilicide; the formation of silicon nitride in material pores is promoted, the pores are filled, the strength of the material is enhanced, the apparent porosity is reduced, and the erosion resistance is improved.

Provided are methods to convert—through a bottom-up approach—binary and ternary titanium carbides, nitrides, borides, phosphides, aluminides, and silicides into lepidocrocitic nanofilaments that in some cases self-assemble into 2D flakes by immersing them in a quaternary ammonium solution at moderate temperatures. The resulting flakes can be C-containing layers that are in turn comprised of nanofilaments in cross-section, some of which nanofilaments can be few microns long in some instances.

The continuous silicon carbide fiber titanium silicide interface deposition equipment and method of the present application belong to the interface deposition device field, which comprises a closed wire discharge area, a conveying assembly is arranged in the closed wire discharge area, the conveying assembly is used for stress release and continuous conveying of the silicon carbide fiber; a first heat treatment area, a first chemical vapor deposition area, a second chemical vapor deposition area, a second heat treatment area and a closed wire collecting area, a recovery assembly is arranged in the closed wire collecting area, the recovery assembly can release stress and continuously recover the silicon carbide fiber after heat treatment of the second heat treatment area, the situation that the continuous silicon carbide fiber deposition needs to be bent for multiple times is avoided, and the deposition efficiency is improved.

The disclosed technology generally relates to forming a diffusion barrier layer structure, and more specifically to a diffusion barrier layer comprising a metal silicide and a titanium silicon nitride and a method for forming the same. In one aspect, a method for forming a diffusion barrier layer comprises the steps of: providing a substrate comprising an exposed silicon surface; forming a metal silicide layer other than a titanium silicide layer by exposing the substrate to a metal precursor other than a titanium-containing precursor; and forming a titanium silicon nitride (TiSiN) layer by periodically exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor, and a silicon-containing precursor after forming the metal silicide layer.

The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S / D region; depositing a titanium silicide layer over the S / D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

The invention discloses a preparation method of a TiSi2 / Ni2 + / polypyrrole composite material for detecting preservative 1-MCP, which comprises the following steps: firstly, selecting a pencil lead with a smooth and undamaged surface, ultrasonically cleaning the pencil lead with absolute ethyl alcohol and distilled water, taking out the pencil lead, airing the pencil lead, and polishing one end of the pencil lead to be smooth, so that the pencil lead is exposed out of a graphite core; preparing a copper wire, polishing two ends of the copper wire to be smooth to expose the copper wire on the surface, connecting the copper wire with a pencil lead by using AB glue, performing ultrasonic cleaning again, airing for later use, and then immersing a pencil lead electrode in the titanium disilicide dispersion liquid for adsorption; then the pencil lead adsorbed with the titanium disilicide is placed in a NiCl2 solution, and a titanium disilicide (TiSi2) / Ni < 2 + > electrode is prepared; and finally, obtaining the optimal condition for detecting the 1-MCP. The invention solves the problems of high preservative detection cost and complex technology in the prior art.

The invention relates to the field of alkaline electrochemical generators, in particular to the field of accumulators. More specifically, the invention relates to a secondary electrochemical generator with a zinc electrode, characterized in that it comprises: a) an electrolyte, which is an aqueous alkaline solution with a molar concentration of 4 M to 15 M of hydroxide anions, and a concentration of soluble silicates, expressed as silicon dioxide (SiO2), of 0.15 to 80 g / l; b) a zinc electrode comprising a conductive ceramic, which at least partially comprises nitrides and / or hafnium carbides and / or carbides and / or magnesium silicides and / or carbides and / or niobium nitrides and / or carbides and / or carbides and / or titanium nitrides and / or vanadium nitrides and / or carbides and / or azides of any two metals selected from the group consisting of hafnium, magnesium, niobium, titanium and vanadium.

Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

The invention provides a flash memory device and a preparation method thereof, and the preparation method comprises the steps: forming a first stack structure on the surface of a substrate of a storage region at a flash memory unit side, the first stack structure comprises a titanium layer, a nickel-platinum alloy layer with a first thickness and a titanium nitride layer, and then executing a thermal annealing process, the first stacked structure is converted into a second stacked structure (the stacked substrate, the nickel-platinum silicide layer, the titanium silicide layer, the nickel-platinum alloy layer with the second thickness and the titanium nitride layer), then the titanium nitride layer and the nickel-platinum alloy layer with the second thickness in the second stacked structure are removed, and finally the thermal annealing process is executed. According to the method, the titanium layer and the nickel-platinum alloy layer are formed on the surface of the substrate, the nickel-platinum silicide layer is obtained through the reaction after thermal annealing, the titanium silicide layer can serve as an etching sacrificial layer of a subsequent contact hole etching process, the situation of excessive etching of the subsequent contact hole etching process is avoided, and the electrical performance of the device is improved.

This invention provides a negative electrode sheet, its preparation method, and a battery. The negative electrode sheet comprises a carbon cloth substrate, a silicon-based composite layer, and a carbon coating layer. A porous structure is formed on the surface of the carbon cloth substrate. The silicon-based composite layer includes silicon particles and titanium silicide. The silicon particles are grown in situ within the porous structure to form a silicon array. Titanium silicide is dispersed on the side of the silicon array facing away from the carbon cloth substrate to form a titanium silicide layer. The carbon coating layer covers the side of the silicon-based composite layer facing away from the carbon cloth substrate. This invention, through a four-tiered structural design of "porous substrate - in-situ silicon array - titanium silicide interface layer - carbon coating," successfully solves industry challenges related to interface bonding, conductivity, process complexity, and cycle stability in binderless silicon-based negative electrodes, providing key technical support for the practical application of high-energy-density lithium-ion batteries.

The application discloses a solar cell and a preparation method, an assembly and a system thereof. The solar cell comprises a silicon substrate, a doped layer and a passivation layer which are sequentially arranged on the silicon substrate, the passivation layer is provided with an electrode groove which locally exposes the doped layer, and the electrode groove is provided with a back electrode. The back electrode comprises a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer and an outer metal layer which are sequentially arranged on the doped layer. The seed metal silicide layer is one or more of a molybdenum silicide layer, a nickel silicide layer and a titanium silicide layer, the seed metal oxide thin layer is one or more of a molybdenum oxide thin layer, a nickel oxide thin layer and a titanium oxide thin layer, the thickness of the seed metal oxide thin layer is not more than 20 nm, and the mixed conductive layer is formed by mutual diffusion of the seed metal oxide and a seed metal-outer metal alloy body. The solar cell has a new electrode structure, can promote improvement of the electrode structure and performance, reduce the cost, has excellent current transmission performance and small metal composite loss.

The invention discloses a ZTA-based conductive ceramic composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: S1, carrying out dry mixing on ZTA micro powder and a thermal expansion coefficient regulator to obtain mixed powder; s2, calcining the mixed powder in the step S1 in air; s3, the calcined powder obtained in the S2 is evenly mixed with conductive phase micro powder, a sintering aid and a solvent, obtained slurry is dried, and the conductive phase micro powder comprises one of molybdenum disilicide, titanium disilicide, chromium disilicide, zirconium disilicide and titanium carbide powder; and granulating, carrying out compression molding, drying and sintering to obtain the ZTA-based conductive ceramic composite material. The functional characteristics (electric conduction and heat conduction) are pursued, and meanwhile, the comprehensive mechanical property of the material is considered. The ZTA matrix provides high strength and toughness, the introduction of the mullite phase further strengthens the grain boundary, and the finally obtained ceramic composite material has the advantages of compact structure, high strength, good wear resistance and good thermal shock resistance, and can meet the comprehensive performance requirements of structural function integrated components.

The invention relates to the field of metal surface treatment, in particular to a diffusion coating integrated coating of a 3D printing mold and a preparation process, the coating sequentially comprises an ion nitriding layer, a base coat, a transition layer and a functional layer from inside to outside, the base coat is a CrN material layer, the transition layer is an AlCrN material layer, and the functional layer is formed by sequentially overlapping a titanium silicide layer and an AlCrN layer. The preparation process comprises the following steps: step S1, pretreatment; step S2, hanging and mounting; s3, carrying out vacuum preheating; step S4, carrying out ion etching; step S5, carrying out ion nitriding; step S6, carrying out secondary ion etching; step S7, coating deposition; and S8, cooling and discharging. Ion nitriding and PVD coating integrated machining is achieved through a diffusion coating integrated machine, and the problems that due to complex stress and high temperature, the surface of a 3D printing mold is prone to being damaged, and the service life is short are solved through a four-layer composite coating structure.

The disclosed technology generally relates to forming diffusion barrier layer structures, and more specifically to a diffusion barrier layer comprising metal silicide and titanium silicon nitride, and a method for forming the same. In one aspect, a method for forming a diffusion barrier layer includes: providing a substrate comprising an exposed silicon surface; forming a metal silicide layer other than a titanium silicide layer by exposing the substrate to a metal precursor other than a titanium-containing precursor; and, after forming the metal silicide layer, forming a titanium silicon nitride (TiSiN) layer by cyclically exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor, and a silicon-containing precursor.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

The present application relates to a kind of green environmental protection fire-retardant waterproof coating and its preparation method, waterproof coating is calculated according to weight fraction, including: 80-120 parts water-based epoxy resin emulsion, 36-58 parts fire-retardant filler, 1-3 parts dispersing agent, 0.2-2 parts defoaming agent, 0.5-1.5 parts leveling agent, 40-60 parts water-based curing agent and 35-55 parts deionized water.The present application is prepared by modifying treatment to ammonium polyphosphate, then titanium disilicide powder is prepared with titanium disilicide powder.Fire-retardant titanium disilicide powder is used as fire retardant and filler in the present application, not only greatly improve the fire resistance of coating, but also enhance the impact resistance and bonding properties of coating.

The invention provides a preparation method of a nano titanium silicide film, which can be applied to the technical field of semiconductors. The method comprises the following steps: forming a heterojunction structure on the surface of a substrate through epitaxial growth; epitaxially growing a silicon cap layer on the surface of the heterojunction structure; depositing a layer of titanium film on the surface of the silicon cap layer; carrying out ion beam bombardment on the Ti / Si interface; then performing nanosecond laser activation; and annealing treatment is conducted within the preset temperature range, the titanium silicide thin film is obtained, and the titanium silicide thin film comprises a nanometer TiSi2 phase. The invention also provides a semiconductor comprising the titanium silicide thin film.