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Switching element of pixel electrode, and manufacturing method

A technology of pixel electrode and switching element, which is applied to the switching element of pixel electrode and its manufacturing field, can solve the problems of rough surface of copper material, easy deformation of copper material, affecting the quality of elements, etc.

Active Publication Date: 2006-02-01
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the adhesion between the copper material and the glass substrate is not good, and the copper element will also diffuse into the insulating layer (such as SiO2 layer), which will affect the quality of the device
Moreover, since the copper material is easily deformed, especially in a plasma process for film deposition (for example, plasma enhanced chemical vapor deposition, PECVD), the copper material will react with the gas in the plasma process to cause the surface of the copper material to be deformed. Adverse effects such as roughness and increased resistance

Method used

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  • Switching element of pixel electrode, and manufacturing method
  • Switching element of pixel electrode, and manufacturing method
  • Switching element of pixel electrode, and manufacturing method

Examples

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no. 1 example

[0026] According to a preferred embodiment of the present invention, the method includes the following main steps.

[0027] Such as Figure 2A As shown, a material layer 215 is formed on the substrate 210 using a sputtering method. Wherein, the material layer 215 includes tantalum silicide, tantalum silicide nitride, titanium silicide, titanium silicide nitride, tungsten silicide, tungsten silicide nitride, and the thickness is approximately between 5 and 200 nanometers. The substrate 210 includes a glass substrate or a plastic substrate.

[0028] In other embodiments, the material layer 215 may be formed on the substrate 210 by using Atomic-Layer Deposition. Wherein, the material layer 215 includes tungsten carbide nitride, and the thickness is approximately between 5 and 200 nanometers. Next, a metal layer 217 is formed on the material layer 215 by chemical vapor deposition, electrochemical plating (ECP) or sputtering.

[0029] Such as Figure 2B As shown, a photolithog...

no. 2 example

[0034] According to a preferred embodiment of the present invention, the method includes the following main steps.

[0035] Such as Figure 3A As shown, a metal layer (not shown) is formed on a substrate 310 by chemical vapor deposition, electrochemical plating (ECP) or sputter deposition. Then, a photolithographic etching process is performed to form the gate 320 on the substrate 310 . The substrate 310 includes a glass substrate or a plastic substrate. The gate 320 includes copper, aluminum, silver, or alloys of the above metals, and has a thickness between about 100 and 500 nanometers.

[0036] Such as Figure 3B As shown, a diffusion barrier layer 325 is conformally formed on the gate 320 using sputtering. Wherein, the diffusion barrier layer 325 includes tantalum silicide, tantalum silicide nitride, titanium silicide, titanium silicide nitride, tungsten silicide, or tungsten silicide nitride, and the thickness is approximately between 5 and 200 nanometers.

[0037] I...

no. 3 example

[0042] According to a preferred embodiment of the present invention, the method includes the following main steps.

[0043] Such as Figure 4A As shown, a material layer 415 is formed on a substrate 410 using a sputtering method. Wherein, the material layer 415 includes tantalum silicide, tantalum silicide nitride, titanium silicide, titanium silicide nitride, tungsten silicide, or tungsten silicide nitride, and the thickness is approximately between 5 and 200 nanometers. The substrate 410 includes a glass substrate or a plastic substrate.

[0044] In other embodiments, the material layer 415 may be formed on the gate 420 by using Atomic-Layer Deposition. Wherein, the material layer 415 includes tungsten carbide nitride, and the thickness is approximately between 5 and 200 nanometers.

[0045] Next, a metal layer 417 is formed on the material layer 215 by chemical vapor deposition, electrochemical plating (ECP) or sputtering.

[0046] Such as Figure 4B As shown, a photol...

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Abstract

The method is suitable to display. The method includes steps: first forming a grid pole on a base plate; next, forming an insulating layer of grid pole above the grid pole; also forming a buffer layer between the grid pole and the base plate and / or between the grid pole and the insulating layer of grid pole. The buffer layer includes tantalum silicide, tantalum-silico-nitride, titanium silicide, titanium-silico-nitride, tungsten silicide, tungsten-silico-nitride or tungsten- carbide-nitride. Then, a semiconductor layer is formed above the insulating layer of grid pole, and source / drain poles are formed above partial semiconductor layer. The buffer layer covers the said grid pole.

Description

technical field [0001] The invention relates to a switching element of a thin film transistor, in particular to a switching element of a pixel electrode and a manufacturing method thereof. Background technique [0002] Bottom-gate type thin film transistor elements have been widely used in thin film transistor liquid crystal displays (TFT-LCD) as switching elements of pixel electrodes. see figure 1 , which shows a conventional bottom-gate TFT structure 100 . The TFT structure 100 includes a substrate 110 , a gate 120 , a gate insulating layer 130 , a channel layer 140 , an ohmic contact layer 150 and a source / drain layer 160 / 170 . [0003] As the size of the TFT-LCD increases, the metal gate line including the gate of the thin film transistor must meet the requirement of low resistance. Since copper and copper alloy materials have relatively low electrical resistance, they are the best choices for gate materials. However, the adhesion between the copper material and th...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L27/12H01L21/336H01L21/84G02F1/1368
Inventor 方国龙蔡文庆杜国源林汉涂
Owner AU OPTRONICS CORP
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