374 results about "Metal contaminants" patented technology

A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.

An electrocoagulation process for removing organic and metal contaminants from a pressurized waste fluid is disclosed in which a clarified waste fluid is produced when the pressure is released.

Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.

An electrocoagulation process for removing organic and metal contaminants from a pressurized waste fluid is disclosed in which a clarified waste fluid is produced when the pressure is released.

A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.

A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

A process for removing amine compounds from a process stream derived from a carbonylation process. The amine compounds may be present as iodide salts. The process stream also contains corrosion metal contaminants. The amine compounds are removed by mixing a portion of the process stream a slipstream to form an aqueous stream having a water concentration of greater than 50 wt. %. The aqueous stream is contacted with an exchange resin to remove amine compounds, as well as corrosion metal contaminants.

A method to reduce metal deposit in the hydroprocessing or upgrade of heavy oil feedstock is provided. The method comprises feeding an improved catalyst feed to the system, with the improved catalyst feed comprising a fresh slurry catalyst and a deoiled spent catalyst, with the deoiled spent catalyst being present in an amount of at least 10% the catalyst feed for the heavy oil upgrade system to have at least a 5% reduction in metal contaminant build-up compared to heavy oil upgrade system without the deoiled spent catalyst in the feed.

A wet oxidation / reduction electrolytic cell stack, system, and method for the remediation of contaminated water is disclosed. A porous electrode of large surface area produces powerful oxidizing agents in situ without having to add any reagents, oxidizers, or catalysts to the water to be treated. Further, by the appropriate selection of electrode material, organic contaminants may be absorbed onto the surface of the electrode and subsequently oxidized to provide a dynamically renewable porous electrode surface. Flow rates, and power requirements may be tailored to the specific moieties to be removed, thus allowing local treatment of specific waste streams resulting in direct discharge to a publicly owned treatment works (POTW) or surface water discharge. A novel feature of this invention is the ability to remove both organic and metal contaminants without the addition of treatment reagents or catalysts.

Methods and apparatus are disclosed for remediating metal contaminants using hydrocarbons which stimulate the growth of hydrocarbon-utilizing bacteria. The metal contaminants may include heavy metals such as arsenic, antimony, beryllium, cadmium, chromium, copper, lead, mercury, iron, manganese, magnesium, radium, nickel, selenium, silver, thallium and zinc. The hydrocarbon may include alkanes, alkenes, alkynes, poly(alkene)s, poly(alkyne)s, aromatic hydrocarbons, aromatic hydrocarbon polymers and aliphatic hydrocarbons. Butane is a particularly suitable hydrocarbon which stimulates the growth of butane-utilizing bacteria. Remediation may occur in-situ or ex-situ, and may occur under aerobic, anaerobic or dual aerobic / anaerobic conditions. Examples of applications include the remediation of heavy metals, the remediation of arsenic impacted surface water, groundwater and / or soil, the remediation of acid mine drainage, and the treatment of spent metal plating solutions.

A wet oxidation / reduction electrolytic cell, system, and method for the remediation of contaminated water is disclosed. A porous electrode of large surface area produces powerful oxidizing agents in situ without having to add any reagents, oxidizers, or catalysts to the water to be treated. Further, by the appropriate selection of electrode material, organic contaminants may be absorbed onto the surface of the electrode and subsequently oxidized to provide a dynamically renewable porous electrode surface. Flow rates, and power requirements may be tailored to the specific moieties to be removed, thus allowing local treatment of specific waste streams resulting in direct discharge to a publicly owned treatment works (POTW) or surface water discharge. A novel feature of this invention is the ability to remove both organic and metal contaminants without the addition of treatment reagents or catalysts.

A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon wafer in a controlled atmosphere from a temperature at or above an oxidation initiation temperature and initiating a flow of an oxygen-containing atmosphere at said oxidation initiation temperature to create an oxidizing ambient around the silicon wafer surface to form an oxide layer on the silicon wafer surface and a strain layer at an interface between the oxide layer and the silicon wafer interior. The cooling of the wafer is also controlled to permit diffusion of atoms of the contaminant from the silicon wafer interior to the strain layer. Then the silicon wafer is then cleaned to remove the oxide layer and the strain layer, thereby removing said contaminant having diffused to the strain layer.

A method for operating a metal detection system that comprises a balanced coil system. One embodiment of the method comprises: determining the phase and magnitude of related signals at least for a first metal contaminant for at least two transmitter frequencies and for at least two particle sizes of the first metal contaminant; determining the phase and magnitude of the related signal for a specific product for the at least two transmitter frequencies; comparing information established at least for the first metal contaminant and the information established for the product; determining a transmitter frequency with which signal components of smallest sized particles of the at least first metal contaminant differ sufficiently or most in phase and amplitude from the phase and amplitude of the product signal; and selecting the transmitter frequency for measuring the product. A metal detection apparatus adapted to operate according to an exemplary method is also provided.

Polysilicon is crushed with a minimum of manual and machine crushing steps by utilizing a large diameter roll crusher, the circumferential crushing surface of which is formed of a plurality of reversibly mounted, close fitting hard metal plates. Reproducible crushing along with such low metal contamination that subsequent cleaning of the crushed polysilicon is not necessary are both obtained.

A method for operating a metal detection system that comprises a balanced coil system. One embodiment of the method comprises: determining the phase and magnitude of related signals at least for a first metal contaminant for at least two transmitter frequencies and for at least two particle sizes of the first metal contaminant; determining the phase and magnitude of the related signal for a specific product for the at least two transmitter frequencies; comparing information established at least for the first metal contaminant and the information established for the product; determining a transmitter frequency with which signal components of smallest sized particles of the at least first metal contaminant differ sufficiently or most in phase and amplitude from the phase and amplitude of the product signal; and selecting the transmitter frequency for measuring the product. A metal detection apparatus adapted to operate according to an exemplary method is also provided.

A highly efficient method for cleaning a substrate, whereby in the cleaning of the substrate, ① in a short time, {circle around (2)} both particle contaminants and metal contaminants can be removed, and ③ a problem associated therewith, such as re-deposition of contaminants or a dimensional change due to etching, can be remarkably reduced, and which has the following characteristics.A method for cleaning a surface of a substrate, which comprises at least the following steps (1) and (2), wherein the step (2) is carried out after carrying out the step (1):Step (1): A cleaning step of cleaning the surface of the substrate with an alkaline cleaning agent containing a completing agent, andStep (2): A cleaning step employing a cleaning agent having a hydrofluoric acid content C (wt %) of from 0.03 to 3 wt %, wherein the cleaning time t (seconds) of the substrate with said cleaning agent is at most 45 seconds, and C and t satisfy the relationship of 0.25≦tC1.29≦5.

A process and system for removing heavy metals, fluoride, silica and other contaminants from large volumes of wastewater is disclosed. In the process, a wastewater stream containing the contaminant is treated with a chemical coagulant to create a particle having a diameter greater than 5 microns. Treated wastewater is passed through a microfiltration membrane which physically separates the metal contaminant particle from the wastewater. Commercially available microfiltration membranes having a pore size from 0.5 micron to 5 microns may be used. The treated wastewater flow rate through the microfiltration membranes can range from 700 gallons per square foot of membrane per day ("GFD") to 1500 GFD. Solids are removed from the membrane surface by periodically backflushing the micro-filtration membranes and draining the filtration vessel within which the membranes are located. The dislodged solid material within the filtration vessel is flushed into a holding tank for further processing of the solids.

The invention belongs to the technical field of soil environment treatment, and particularly relates to a heavy metal immobilization chemical reagent composition and a treatment method of heavy metal in immobilization polluted soil. The immobilized reagent composition comprises phosphate chemical compound of 5-70%, metal sulfide of 1-60%, metal oxide of 5-80%, strong alkali and weak acid salt of 5-65%, metal stabilizers of 0.1-15% and metal chelator of 0.1-10%. The invention further provides a method of restoring heavy metal polluted soil in an immobilization mode by immobilized reagents. The immobilized reagents can enable various heavy metal pollutants in the polluted soil to be immobilized, the content of activated state (transportable) heavy metal in soil is lowered, and restoration and treatment to the heavy metal polluted soil are achieved. The heavy metal pollutant immobilized reagent composition and the immobilization treatment method have the advantages of being good in immobilization effect, simple and easy in operating process, low in cost, and free of secondary pollution and the like.

A method is provided for carrying out depolymerization of a polymer containing electrophilic linkages in the presence of a catalyst and a nucleophilic reagent, wherein production of undesirable byproducts resulting from polymer degradation is minimized. The reaction can be carried out at a temperature of 80° C. or less, and generally involves the use of an organic, nonmetallic catalyst, thereby ensuring that the depolymerization product(s) are substantially free of metal contaminants. In an exemplary depolymerization method, the catalyst is a carbene compound such as an N-heterocyclic carbene, or is a precursor to a carbene compound. The method provides an important alternative to current recycling techniques such as those used in the degradation of polyesters, polyamides, and the like.

Metal sorbent compositions for removing a metal contaminant from a fluid, such as removal of mercury from a coal-fired flue gas stream, and methods for making and using the same are provided. The subject metal sorbent compositions comprise an effective amount of an aqueous dispersion of microfine elemental sulfur particles on an adsorbent substrate, and optionally, a metal capture enhancing agent such as a halogen source and / or an oxidizing agent in an amount providing a metal capture enhancing effect on the metal sorbent composition. The subject metal sorbent compositions are prepared by drying an aqueous dispersion of microfine elemental sulfur particles on an adsorbent substrate, such as on a substrate of microfine particles of a refractory material and the like. Also provided are kits for use in preparing the subject compositions, and compositions produced by the methods. The subject compositions, kits and systems find use in a variety of different applications.

To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B):(A) an organic acid(B) a nonionic surfactant having an HLB value of from 5 to less than 13.

A method for removing metal contaminants from acidic mine wastewater using lignin derivatives, such as lignosulfonates and kraft lignin, an alkali coagulant, such as a lime compound, and an alkaline composition for increasing the pH. The lignin derivatives are dispersed in the wastewater and the coagulant is added, increasing the pH to about 4.5-8.5 and causing the formation of a floc. The alkaline composition is then added to bring the pH to about 9 to 10, causing the further formation of a floc. Optionally, air oxidation is carried out, reducing the pH to about 8.1-8.6. Optionally, a ferric or ferrous salt may also be added. The flocs comprise metal-lignin colloids, metal hydroxides and metal salts. The flocs coagulate to form a sludge. Optionally, fly ash or diatomaceous earth may be added to increase the density and stability of the sludge. The sludge that is formed contains the metals and is separated from the treated water by filtration.

The present invention is directed to catalytic cracking additives comprising a metals trapping material; and a high activity catalyst. The present invention is directed to processes for the catalytic cracking of feedstock comprising contacting said feedstock under catalytic cracking conditions with a composition comprising a bulk catalyst and a catalytic cracking additive, wherein the catalytic cracking additive comprises a metals trapping material; and a high activity catalyst. The invention is also directed to processes for increasing the performance of a bulk catalyst in the presence of at least one metal comprising contacting a feedstock with a catalytic cracking additive comprising a metals trapping material; and a high activity catalyst.

Methods and apparatus are disclosed for remediating metal contaminants using hydrocarbons which stimulate the growth of hydrocarbon-utilizing bacteria. The metal contaminants may include heavy metals such as arsenic, antimony, beryllium, cadmium, chromium, copper, lead, mercury, iron, manganese, magnesium, radium, nickel, selenium, silver, thallium and zinc. The hydrocarbon may include alkanes, alkenes, Aalkynes, poly(alkene)s, poly(alkyne)s, aromatic hydrocarbons, aromatic hydrocarbon polymers and aliphatic hydrocarbons. Butane is a particularly suitable hydrocarbon which stimulates the growth of butane-utilizing bacteria. Remediation may occur in-situ or ex-situ, and may occur under aerobic, anaerobic or dual aerobic / anaerobic conditions. Examples of applications include the remediation of heavy metals, the remediation of arsenic impacted surface water, groundwater and / or soil, the remediation of acid mine drainage, and the treatment of spent metal plating solutions.

The invention belongs to the technical field of in-situ repair of heavy metal contaminated soil. Municipal sludge is used for preparing sludge-based charcoal through thermophilic thermolysis. The charcoal can be used as a repairing agent for the heavy metal contaminated soil. The sludge charcoal repairing agent comprises thickened sludge and palygorskite. A final black product namely the sludge-based charcoal is produced through the steps of performing biological and physical anhydration on sludge, then mixing the sludge after the biological and physical anhydration with the palygorskite, performing feeding into an atmosphere furnace, and then performing thermophilic thermolysis. The sludge charcoal is produced from the following components of 5-10% of the palygorskite and the balance of thethickened sludge. According to the sludge charcoal disclosed by the invention, the municipal sludge is subjected to decrement and harmless treatment, so that the municipal sludge can enter cycle of material and energy in natural environment again, and the difficult problem of treating and disposing the sludge is solved. The sludge charcoal is added to the heavy metal contaminated soil, so that heavy metal contaminated substances can be effectively solidified, the purposes of being durable and stable in repairing effect and being free from secondary pollution are realized, and the sludge charcoal is an ideal soil heavy metal contamination repairing agent with low cost.

The invention discloses a biological soil remediation agent which is prepared by mixing a solid passivator and a microbic solution according to the volume-weight ratio of 1:(15-30) (L / kg). The solid passivator comprises the following ingredients in percent by mass: 50-60 percent of clay carrier, 15-30 percent of diatomite, 10-15 percent of humic acid and 10-20 percent of charcoal. The microbic solution comprises a non-spore forming bacterium and streptomyces microflavus. The biological soil remediation agent can be used for remediating a soil ecosystem, improving the crop growth environment, effectively passivating heavy metal pollutants, such as lead, and reducing the availability for plants.

A substrate manufacturing method includes steps of preparing a bonded substrate stack formed by bonding a second substrate to a first substrate having an insulator at least on a surface, forming a gettering layer to capture a metal contamination on the surface of the bonded substrate stack to form a composite substrate stack, annealing the composite substrate stack, and removing the gettering layer from the composite substrate stack.

A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.