The invention provides a two-dimensional / three-dimensional
perovskite heterojunction subjected to
solvent heat treatment, a preparation method and application. After the two-dimensional
perovskite passivation layer is prepared on the surface of the three-dimensional lead
halide perovskite thin film,
solvent heat treatment is carried out through AX / IPA mixed steam, lead
halide by-products at a two-dimensional / three-dimensional perovskite
heterojunction interface are eliminated, and the number of
halide octahedron layers in two-dimensional perovskite is increased. According to the invention, the non-
radiation load center on the surface of the film is effectively reduced, the
passivation effect of the two-dimensional perovskite is enhanced, and the
photoelectric conversion efficiency is improved; moreover, the out-of-plane transmission capability of carriers is enhanced, the
conductivity in the vertical direction is improved, the current loss is reduced, and the
responsivity and the
detection rate of the device are improved. The problem of
solvent incompatibility in two-dimensional / three-dimensional perovskite
heterojunction prepared by a traditional solution method is solved, effective
passivation of surface defects of the perovskite thin film is realized, and powerful
technical support is provided for preparation of high-performance stable perovskite thin film photoelectric devices.