126results about How to "Effective passivation" patented technology

The invention discloses a fixed enrichment method for city life compost heavy metals through modified nanocarbon. The fixed enrichment method comprises the following steps: modifying the modified nanocarbon with the grain diameter of 20-70nm before being applied so as to obtain various types of modified nanocarbon; then sealing a layer of cotton cloth and a nylon net at the lower end of a PVC (polyvinyl chloride) tube, uniformly and proportionally mixing garbage compost with the modified nanocarbon, wherein each tube is filled with150g of a mixed material; setting the temperature during experiments to be 19-27 DEG C and the relative humidity to be 60% to 72%, and supplementing water for the compost every day, so that the content of water of the compost reaches about 70% of field moisture capacity; sampling 45d for cultivation later, and carrying out morphological analysis on the heavy metals, wherein the addition of the modified nanocarbon is 1-5%(w/w) of the weight of the garbage compost. Experimental results show that the modified nanocarbon is added so that the contents of the heavy metals in a residual form are increased, the conversion of the compost heavy metals from a plant easily-absorbed state to a difficultly-absorbed state is promoted, and the method provides a basis for the application of the modified nanocarbon on passivation and plant enrichment of the heavy metals in garbage compost.

The invention discloses a black phosphorus/graphene heterostructure-based ultraviolet detector and a production method thereof. The detector comprises a substrate, an insulating layer and a black phosphorus/graphene heterostructure, wherein the insulating layer covers the substrate; and the black phosphorus/graphene heterostructure is formed by stacking black phosphorus and graphene and is located on the insulating layer. The disadvantages of the black phosphorus are compensated by the black phosphorus/graphene heterostructure; and the performance of the detector can be improved under the premise of not affecting the advantages of the black phosphorus.

The invention discloses a biological soil remediation agent which is prepared by mixing a solid passivator and a microbic solution according to the volume-weight ratio of 1:(15-30) (L/kg). The solid passivator comprises the following ingredients in percent by mass: 50-60 percent of clay carrier, 15-30 percent of diatomite, 10-15 percent of humic acid and 10-20 percent of charcoal. The microbic solution comprises a non-spore forming bacterium and streptomyces microflavus. The biological soil remediation agent can be used for remediating a soil ecosystem, improving the crop growth environment, effectively passivating heavy metal pollutants, such as lead, and reducing the availability for plants.

The invention discloses catalytic cracking anti-coke income-increasing auxiliary agent which is used for catalytic cracking (FCC) devices and is prepared by following components according to the proportion by weight: disperser 5-15%, thermal cracking active agent 5-20%, free radical chain reaction depressor 5-25%, metal passivator 15-60% and dissolvent 25-65%. The invention is oil soluble auxiliary agent and has good compatibility with catalytic cracking mediums, the slag inserting rate of the FCC devices can be increased after the auxiliary agent is added, the light oil yield is increased, and the coke yielding rate is reduced.

The invention relates to a method for preparing high-concentration soya-bean milk. In the method for preparing the high-concentration soya-bean milk, the high-concentration soya-bean milk is prepared by sorting, cleaning and immersing soybeans, pulping, batching, stewing pulp, deactivating enzyme, performing superfine grinding, homogenizing, degassing, performing quantitative packaging, sterilizing, cooling, and blowing dry sequentially. Compared with the prior art, the method for preparing the high-concentration soya-bean milk has the advantages that: the high-concentration soya-bean milk has high nutritional value by adding abundant edible ingredients, and due to the full utilization of bean dregs, the content of dietary fibers in the soya-bean milk is improved. In addition, in the preparation process, bean immersing water is utilized effectively to realize the zero release of production and protect environment.

The invention discloses a silicon carbide (SiC) metal oxide semiconductor (MOS) capacitor with a composite dielectric layer, and mainly solves the problem that the conventional SiC MOS capacitor has high interface-state density and weak voltage endurance. The structure of the capacitor is that: an N-type heavy doping SiC substrate layer, an N-type light doping SiC epitaxy layer, an SiO2 transition layer and an HfxAl1-xON dielectric layer are sequentially arranged from bottom to top; the back of the SiC substrate and the surface of the HfxAl1-xON are sputtered with metal Al to form positive and negative electrodes respectively; the N-type SiC epitaxy layer is 10 to 100 mu m thick, the doping concentration is 1*10<15> to 5*10<15>cm<-3>; the SiO2 transition layer is 1 to 15 mu m thick, and the HfxAl1-xON dielectric layer is 10 to 30 mu m thick. The SiO2 transition layer and the HfxAl1-xON layer form a composite dielectric layer structure so as to reduce the interface-state intensity of the dielectric layer and the SiC interface, reduce the current leakage of the dielectric layer, improve the voltage-resisting capability of the dielectric layer, and improve the reliability of the SiC MOS devices. The invention also discloses a manufacturing method for a SiC power integrated circuit and a SiC power isolation device.

The invention relates to a chromium-free passivation solution for an electro-galvanized steel plate and a preparation method of passivation solution and belongs to the technical field of metal surface treatment. The passivation solution is prepared from the following components in parts by mass: 8-20 parts of vanadate, 6-12 parts of molybdate, 8-15 parts of phosphoric acid, 3-8 parts of sodium bisulfite, 5-12 parts of phytic acid, 2-6 parts of diphenylolpropane, 2-5 parts of sodium metasilicate, 3-8 parts of ethanediol and 12-22 parts of deionized water. By the chromium-free passivation solution for the electro-galvanized steel plate, a stable complex passivation layer is formed on the surface of a galvanizing layer and has better corrosion resistance and oxidation resistance, especially corrosion resistance reaches the corrosion resistance of the passivation layer obtained by passivating the galvanizing layer through a conventional chromium-containing passivation solution and the chromium-free passivation solution is an ideal alternative product of the chromium-containing passivation solution.

The invention discloses a method for synthesizing highly effective and stable all-inorganic halogen perovskite quantum dot scintillator with equivalent ligands, belonging to the technical field of preparing inorganic semiconductor luminescent materials. The method comprises the following steps: preparing tetra-n-octyl ammonium bromide precursor solution; stirring and heating cesium carbonate, leadacetate, octadecene and 1,4-dodecylbenzene sulfonic acid to react to form a transparent precursor solution under inert gas conditions; quickly adding the tetra-n-octyl ammonium bromide precursor solution into the transparent precursor solution for reaction to obtain a quantum dot solution; adding ethyl acetate to the quantum dot solution for purification, and dispersing the precipitate after centrifugation in toluene solution. The colloidal perovskite quantum dots are obtained by mixing toluene solution of PMMA and quantum dot solution. The quantum dots are coated onto the cleaned glass substrate to form a film. The inorganic halogen perovskite quantum dot prepared by the invention can still maintain high quantum efficiency and stability after being purified for many times.

The invention provides a method of manufacturing a thin film cell and the thin film cell. The method comprises the following steps: a cell layer is deposited on an electricity-conducting substrate; nanometer patterns required by nanometer grating preparation are formed on the cell layer; a nanometer grating is formed on the surface of the cell layer under the protection of the nanometer patterns as a mask; a p-n junction is formed on the surface of the nanometer grating of the cell layer; a top electrode is prepared on the surface of the p-n junction; a dielectric film is deposited on a window region of the cell layer so as to passivate the nanometer grating and form a complete stacked nanometer grating structure; a back electrode is prepared on one side, where the cell layer is not deposited, of the electricity-conducting substrate. The method of manufacturing the thin film cell and the thin film cell have the advantages that the dielectric layer is deposited on the surface of the nano-sized textured cell so as to effectively passivate the nonradiative recombination center on the surface of the cell without damaging the efficient light-trapping effect of the cell, and therefore the nanometer structure is really applied to solar cells, efficiency of the cell is improved, and the high cost performance of the cell is achieved.

The invention relates to the technical field of crystalline silicon solar cell technologies, and in particular relates to a positive dielectric film of a sandwich structure suitable for an RIE (reactive ion etching) texture and a manufacturing method thereof. The positive dielectric film comprises a SiO2 (silicon dioxide) film at a bottom layer, wherein a SiNx (amorphous silicon nitride) film at an intermediate layer is covered on the surface of the SiO2 film at the bottom layer; and a SiO2 film at a surface layer is covered on the surface of the SiNx film at the intermediate layer. The manufacturing method of the positive dielectric film comprises the following steps of: 1, using a dry-oxygen oxidation method to grow a SiO2 film layer on a silicon texture; 2, adopting a PECVD (plasma enhanced chemical vapor deposition) method to deposit a SiNx film layer rich in silicon; and 3, adopting the PECVD method to deposit a SiO2 film. According to the invention, a crystalline silicon cell textured by RIE can be passivated effectively, the open-circuit voltage of the cell can be increased by 3-5mV, and the conversion efficiency of the cell can be increased by 0.2%-0.4%.

The invention belongs to the technical field of agricultural waste recycling and resourceful utilization and soil improvement, and particularly relates to preparation and application of phosphorus-rich biochar based on mulberry branch waste. Phosphorus-rich biochar is prepared through continuous pyrolysis, and the prepared phosphorus-rich biochar is applied to pollution treatment of farmland soil heavy metal; the phosphorus-rich biochar can effectively passivate soil heavy metals, inhibits the heavy metal absorption and accumulation process of crops, promotes the nutrition supply of soil to crops, and can be used as an efficient carbon-based soil conditioner for soil remediation. A large amount of mulberry branch waste can be reduced, and effective resource utilization of the mulberry branch waste can be realized.

The invention belongs to a method for improving material performance, and particularly relates to a method for improving an open-circuit voltage of an organic-inorganic hybrid perovskite solar cell. The method comprises the following steps of adding a bifunctional polymer into the organic-inorganic hybrid perovskite precursor; or forming a thin layer containing a bifunctional polymer on the surface of a formed organic-inorganic hybrid perovskite thin film, wherein the bifunctional polymer is the bifunctional polymer of which the side chain contains groups capable of passivating positive electricity defects and negative electricity defects at the same time. By introducing the bifunctional polymer into the perovskite thin film, positive electricity and negative electricity grain boundary defects in the perovskite polycrystalline thin film can be effectively passivated at the same time, a deep energy level defect concentration is reduced, a carrier recombination probability is decreased, and the open-circuit voltage of a perovskite solar cell device is improved. And adopted materials are low in cost and easy to realize in process.

The invention discloses a quantum dot and a preparation method thereof, wherein the quantum dot comprises a quantum dot core, a metal layer covering the quantum dot core, and a semiconductor shell layer covering the metal layer, and the metal element in the metal layer is one or a plurality of elements selected from Zn, Hg, Al, Ga and In. According to the present invention, the metal layer can bebonded to the quantum dot core by using the ligand on the surface of the quantum dot core as the linker so as to promote the surface activation of the quantum dot core, such that the further growth reaction of the semiconductor shell layer outside the quantum dot can be easily performed; and through the crystal structure formed by bonding the metal atom in the metal layer and the quantum dot core,the surface of the quantum dot core can be effectively passivated, the surface defect can be reduced, and the lattice mismatch between the core and the shell can be reduced, such that the light emitting efficiency and the size uniformity of the quantum dot material can be enhanced.

The invention belongs to the field of preparation of perovskite solar cells, and particularly relates to a method for efficiently and stably preparing a large-area perovskite solar cell based on porphyrin doping. The method is mainly characterized by comprises the following steps that firstly, a simple and convenient porphyrin and porphyrin derivative synthetic path is provided; secondly, a traceamount of porphyrin or a trace number of porphyrin derivatives are added into a perovskite pecursor solution; thirdly, a black and dense perovskite film is formed; and fourthly, a perovskite layer iscoated with the perovskite film containing the porphyrin and porphyrin derivative in a spinning mode, a hole transporting layer and an electrode layer are coated in sequence, and the perovskite solarcell is formed. The method has the beneficial effects that the perovskite film is doped with ammonium-based porphyrin, effective crystallization control over the perovskite film is achieved successfully, because the ammonium-based porphyrin has the properties of a surfactant, the film formation property of the solution is improved after the ammonium-based porphyrin is added into the solution, andthe pinhole-free and uniform large-area perovskite film is prepared through a scrape-coating process.

The invention discloses a carbon-based microbial organic fertilizer and a preparation method thereof. The organic fertilizer is prepared from the following components in parts by weight: 15-25 parts of biochar, 10-25 parts of ferric chloride, 1-5 parts of EM bacteria, 25-40 parts of cow dung, 25-35 parts of bran, 5-10 parts of citric acid, 10-15 parts of nano iron powder, 85-95 parts of distilledwater and 1-10 parts of honey. The preparation method is simple in preparation process and relatively low in cost; the fertilizer can be used for fertilization of land and crops such as fields, facility greenhouses, potted plants and heavy metal pollution, can effectively adjust the pH of facility soil, improve the soil structure and porosity, loosen the soil, promote accumulation and conversion of organic substances, reduce nitrate nitrogen and available phosphorus leaching loss of the soil, and increase the content of organic matters and N, P and K nutrients in the soil. The microbial activity can be improved, heavy metals in the soil can be effectively adsorbed, fixed and passivated, heavy metal pollution and continuous cropping obstacles of the soil can be repaired, and the yield and quality of crops can be improved.

The invention relates to a chelated perovskite material, a film, a device, and a preparation method and application thereof. The catalyst is prepared by adding a chelating agent into a perovskite solution, wherein the chelating agent comprises a complexing agent or chelating agent capable of generating coordination with metal ions by coordination atoms, or a chelate or complex formed by coordination reaction of the complexing agent or chelating agent and the corresponding metal ions; according to the material, body defects and surface defects of the perovskite thin film are effectively passivated, and non-radiative recombination of carriers is reduced, so that the efficiency and long-term operation stability of the perovskite solar cell are effectively improved.

The invention relates to the field of farmland soil remediation, in particular to a soil conditioner for treating farmland cadmium and arsenic combined pollution and an application method of the soil conditioner. The soil conditioner is prepared from the following components in percentage by mass: 50%-60% of modified charcoal, 10%-30% of reduced iron powder, 10%-30% of calcium magnesium phosphate fertilizer and 10%-30% of sepiolite. When the soil conditioner is applied, the soil conditioner is uniformly mixed with water through a stirring box to form slurry, then the slurry is sprayed into a rice field through slurry spraying equipment, and then the soil conditioner is fully mixed with soil through ploughing. The soil conditioner provided by the invention can effectively reduce the bioavailability of cadmium and arsenic in farmland soil, reduce the content of cadmium and arsenic in agricultural products produced in a cadmium and arsenic combined pollution farmland, and avoid secondary pollution in the use process.

The invention discloses a preparation method of a POSS-modified CdTe quantum dot-sensitized solar cell. The method comprises the steps of carrying out reflux condensation by adopting a water phase method to prepare CdTe quantum dot powder; and then modifying POSS to the surfaces of CdTe quantum dots and assembling POSS-modified CdTe quantum dots into the quantum dot-sensitized solar cell as a photosensitizer. The method is a simple and feasible preparation method of the OA-POSS-modified CdTe quantum dot-sensitized solar cell. The problems of poor quantum dot stability and severe combination of electron holes between a photo-anode and a quantum dot interface are solved. OA-POSS is modified on the surfaces of the CdTe quantum dots, so that the photoelectric characteristics of the CdTe quantum dots can be changed, the quantum dots can be effectively passivated, the defects of the surfaces of the quantum dots are reduced, the stability of the quantum dots is improved and electrons are more effectively injected into TiO2, thereby improving the photoelectric conversion efficiency and the stability of the quantum dot-sensitized solar cell.

The invention provides a method of alloying a wafer after wiring, comprising the following steps: placing a wafer after wiring in a cavity, feeding nitrogen used as a carrier gas into the cavity continuously, and raising the temperature in the cavity to a first preset temperature; keeping the cavity at the first preset temperature, and feeding a mixed gas containing a preset percentage of hydrogen into the cavity at a preset flow rate for a first preset time, wherein the flow rate is greater than a flow rate threshold; and after feeding of the mixed gas ends, feeding nitrogen into the cavity again until the cavity where the wafer is located is filled with pure nitrogen, and cooling the cavity in a pure nitrogen atmosphere. According to the method, by optimizing an alloying menu in a semiconductor manufacturing technology (namely, increasing the flow rate at which a preset percentage of hydrogen is fed during alloying), the Si ((silicon) dangling bond near the interface is passivated effectively, the interface state density is reduced greatly, and the quality of gate oxide is repaired. Therefore, the characteristic of the C-V curve of an NMOS capacitor is changed, frequency failure is improved, and the product yield is improved.

The invention discloses an inorganic light-weight heat insulation mortar composite XPS heat insulation plate, which comprises an XPS base plate, an interface agent layer and an inorganic light-weight heat insulation mortar layer, wherein grooves are formed in the front side and the back side of the XPS base plate; the inorganic light-weight heat insulation mortar layer is compounded with gridding cloth; the interface agent layer is arranged on the XPS base plate provided with the grooves at the front side and the back side; and the inorganic light-weight heat insulation mortar layer compounded with the gridding cloth is arranged on the interface agent layer. Compared with the prior art, the inorganic light-weight heat insulation mortar composite XPS heat insulation plate has the advantages that the thermal performance of a prepared stage A fireproof heat insulation plate is uniform; the efficient heat insulation effect is achieved; good fireproof performance is also realized; and the inorganic light-weight heat insulation mortar composite XPS heat insulation plate can be used as a heat insulation plate material to be widely used for building wall bodies.

The invention discloses a quantum dot and a preparation method thereof. The quantum dot comprises a quantum dot core, a first metal layer covering the quantum dot core, a first semiconductor shell layer covering the first metal layer, a second metal layer covering the first semiconductor shell layer, and a second semiconductor shell layer covering the second metal layer, wherein the metal elementsin the first metal layer and the second metal layer are independently one or a plurality of elements selected from Zn, Hg, Al, Ga and In. According to the present invention, the metal layer can be bonded to the quantum dot core by using the ligand on the surface of the quantum dot core as the linker so as to promote the surface activation of the quantum dot core, such that the further growth reaction of the semiconductor shell layer outside the quantum dot can be easily performed; and through the crystal structure formed by bonding the metal atom in the metal layer and the quantum dot core, the surface of the quantum dot core can be effectively passivated, the surface defect can be reduced, and the lattice mismatch between the core and the shell can be reduced, such that the light emitting efficiency and the size uniformity of the quantum dot material can be enhanced.

The invention belongs to the field of semiconductor manufacturing and discloses a method for optimizing the passivation of a gallium nitride high-electron-mobility transistor. The method comprises thefollowing steps that: a gallium nitride epitaxial layer is grown on a substrate; etching is performed, so that an active region mesa can be formed; a source ohmic contact electrode and a drain ohmiccontact electrode are formed; a natural oxide layer on the surface of the gallium nitride material is removed; gallium oxide is deposited so as to serve as an intermediate layer of a passivation layerand a GaN cap layer; a device passivation layer is deposited on the gallium oxide intermediate layer; and the metal electrode of a gate is formed. With the method of the invention adopted, an interface defect between the gallium nitride cap layer and the passivation layer can be reduced; the passivation effect of the device is improved; the current collapse phenomenon of the gallium nitride high-electron mobility transistor is effectively inhibited; and the breakdown voltage of the device is improved.

The invention relates to an ecological block prepared by riverway silt, and a method and device for preparing the ecological block. The method comprises the following steps that S1, waste in the original riverway silt is removed, sand stone is separated from the original riverway silt, and the riverway silt after pretreatment is obtained; and an accessory ingredient is added into the riverway siltafter pretreatment for passivation regulating to obtain the riverway silt after passivation, and the accessory ingredient comprises calcium oxide, iron salt, polyacrylamide and bentonite; S2, dewatering is conducted on the riverway silt after passivation to obtain a silt cake, and crushing is conducted on the silt cake to obtain scattered base mud with the particle size of no more than 1mm; and S3, the scattered base mud, cement, coarse aggregates and fine aggregates are mixed and pressed and molded for still standing to obtain the ecological block. The device for preparing the ecological block by the riverway silt comprises a cutter-suction dredger, a sand stone separating machine, a silt concentrator, a silt dewatering machine, a silt crusher and a brick press. According to the ecological block, passivation is conducted on the heavy metal ions, and the environmental protection performance and the anti-pressure performance are excellent.