Method of manufacturing thin film cell and thin film cell

Abstract

The invention provides a method of manufacturing a thin film cell and the thin film cell. The method comprises the following steps: a cell layer is deposited on an electricity-conducting substrate; nanometer patterns required by nanometer grating preparation are formed on the cell layer; a nanometer grating is formed on the surface of the cell layer under the protection of the nanometer patterns as a mask; a p-n junction is formed on the surface of the nanometer grating of the cell layer; a top electrode is prepared on the surface of the p-n junction; a dielectric film is deposited on a window region of the cell layer so as to passivate the nanometer grating and form a complete stacked nanometer grating structure; a back electrode is prepared on one side, where the cell layer is not deposited, of the electricity-conducting substrate. The method of manufacturing the thin film cell and the thin film cell have the advantages that the dielectric layer is deposited on the surface of the nano-sized textured cell so as to effectively passivate the nonradiative recombination center on the surface of the cell without damaging the efficient light-trapping effect of the cell, and therefore the nanometer structure is really applied to solar cells, efficiency of the cell is improved, and the high cost performance of the cell is achieved.

Description

technical field [0001] The invention belongs to the fields of micro-nano photonics and photovoltaics, and is suitable for Si-based thin-film solar cells. Background technique [0002] High cost performance is the main criterion for solar cells to truly enter the market and become the mainstream of renewable energy. Although due to the abundant resources of crystalline Si materials, no environmental pollution, high photoelectric conversion efficiency and mature technology, solar cells using crystalline Si as raw materials have always been the leading products in the photovoltaic field, accounting for an absolute market share. However, since Si is an indirect bandgap semiconductor, the resulting weak absorption makes the thickness of the traditional commercial crystalline Si battery exceed 100 microns. On the one hand, the resulting material cost makes the price of the crystalline Si battery high. To obtain a high open-circuit voltage, Si material with high crystal quality mu...

AI Technical Summary

Problems solved by technology

[0004] In addition, experiments have proved that surface texturing has become an important means to improve the efficiency of commercial crystalline Si cells, which can increase the cell absorption efficiency by up to 4n 2 (n is the refractive index of Si material); but this micron-scale texture is not suitable for thin-film Si-based batteries

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