Si/TiOx heterojunction-based double-sided crystalline silicon solar cell
A technology of solar cells and crystalline silicon, which is applied in the field of solar cells and semiconductor devices, can solve problems such as hindering the development of HIT solar cells and waste of production equipment, and achieve the effects of reducing photovoltaic power generation costs, increasing power generation, and enhancing built-in electric fields
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Embodiment 1
[0019] (1) Use n-type silicon wafers as the absorbing layer, conduct preliminary cleaning on the silicon wafers, and make texture on both sides.
[0020] (2) Prepare a p-type heavily doped layer on the back of the silicon wafer using a diffusion process.
[0021] (3) Deposit Al on the back 2 o 3 passivation layer, followed by grid-shaped Ag electrodes.
[0022] (4) Perform secondary cleaning on the front side of the silicon wafer.
[0023] (5) Preparation of TiO on the front side of the silicon wafer using atomic layer deposition x Floor.
[0024] (6) on TiO x An ITO transparent conductive layer and an Ag metal grid line are deposited on the layer to prepare a front electrode.
Embodiment 2
[0026] (1) Use p-type silicon wafers as the absorbing layer, conduct preliminary cleaning on the silicon wafers, and make texture on both sides.
[0027] (2) The p-type heavily doped layer on the back is prepared by ion implantation process.
[0028] (3) Deposit Al on the back 2 o 3 / SiN x passivation layer, followed by the fabrication of grid-like Cu electrodes.
[0029] (4) Perform secondary cleaning on the front side of the silicon wafer.
[0030] (5) Preparation of TiO by chemical vapor deposition on the front side of the silicon wafer x Floor.
[0031] (6) on TiO x An ITO transparent conductive layer and an Ag metal grid line are deposited on the layer to prepare a front electrode.
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