101results about How to "Suppress dark current" patented technology

A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.

In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-plane side than the charge accumulating units. The depletion prevention layer prevents a depletion region around the charge accumulating units from reaching the second plane of the semiconductor base. The depletion prevention layer can suppress surface dark current going into the charge accumulating units. Meanwhile, an energy ray incident from the second-plane side pass through the depletion prevention layer to generate signal charges in the charge accumulating units (depletion regions). The charge accumulating units collect, on a pixel-by-pixel basis, the signal charges which are to be transported to the charge transfer unit under voltage control or the like, and then are read to exterior as image signals.

The invention discloses a preparation method for a photoanode of a dye-sensitized solar cell. The preparation method comprises the following steps of: (1) taking fluorine-doped tin oxide (FTO) conductive glass as a substrate material of a photoanode electrode, wherein the thickness of a substrate is 2 to 3mm, the visible light transmission rate of the substrate is greater than 90 percent, and the surface square resistance of the substrate is 14 to 18 omega/square; (2) sputtering a compact semiconductor layer with the thickness of about 50 to 300nm on the surface of the FTO conductive glass to serve as a baffling layer by a magnetically-controlled sputtering method; (3) mixing an alcohol solution and semiconductor granules and dispersing the mixture by using ultrasonic to obtain an electrophoretic solution; and (4) depositing the electrophoretic solution on the FTO conductive substrate with the compact semiconductor layer by an electrophoresis method in a high magnetic field of 10 to 12T. By the method, an obtained semiconductor film does not have cracks, is formed quickly and has uniform and controllable depositing thickness within a relatively large range; and a semiconductor crystal has the advantages of relatively good crystal plane orientation and the like.

The invention discloses a GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector, which consists of the following components from bottom to top: a GaAs substrate, a GaAs buffer layer, an AlSb nucleating layer, a GaSb lower buffer layer, an AlSb/GaSb superlattice layer, a GaSb upper buffer layer, an InAs/GaSb superlattice layer, a GaSb cover layer and a titanium alloy electrode. The invention also discloses a method for manufacturing the GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector at the same time. By using the GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector and the method, a high-quality GaSb buffer layer is grown on the GaAs substrate, and the InAs/GaSb superlattice layer is grown on the GaSb buffer layer, thus an infrared photodetector with low dark current and low cost can be manufactured.

The invention discloses an ultraviolet photodiode based on NiO/Ga2O3, comprising a top electrode and a bottom electrode, wherein A P-type crystal NiO film, an I-type crystal beta-Ga2O3 film, and an N-type single crystal beta-Ga2O3 substrate are sequentially disposed between the two electrodes from the top electrode to the bottom electrode. The invention also discloses a preparation method of an ultraviolet photodiode based on NiO/Ga2O3. The invention solves the problem that the Ga2O3-based pn junction ultraviolet photodiode cannot be prepared due to the lack of p-type Ga2O3 material in the prior art.

The invention discloses a high-sensitivity negative capacitance field effect transistor photoelectric detector and a preparation method thereof. The detector is characterized by structurally comprising a substrate, an oxide, a gate electrode, a hafnium oxide-based ferroelectric gate dielectric with a negative capacitance effect, an oxide gate dielectric, a low-dimensional semiconductor channel andmetal source and drain electrodes in sequence from bottom to top. Firstly, a gate electrode layer is prepared on a substrate through ion beam sputtering, a hafnium oxide-based ferroelectric film is grown on the electrode layer by using an atomic layer deposition method, an oxide gate dielectric is deposited after high-temperature rapid annealing, then a transition metal chalcogenide low-dimensional semiconductor is prepared on the structure, and finally metal source and drain electrodes are prepared by using an electron beam etching technology in combination with a stripping process to form the hafnium oxide-based ferroelectric film-based low-dimensional material negative capacitance field effect transistor photoelectric detection device structure. The metal-ferroelectric-oxide-semiconductor photoelectric transistor structure can realize room temperature photoelectric detection with extremely low sub-threshold swing and high performance.

The invention discloses a hole transport material 2,6-bis(triphenylamine)-4,8-bis(alkoxy)benzo[1,2-b:4,5-b']bithiophene for a perovskite solar cell. The hole transport material has a simple molecular structure, a lateral group to which an aromatic functional group can be introduced, high hole mobility, high efficiency, high electrical conductivity and high dissolubility, and the perovskite solar cell prepared from the hole transport material can be matched with a perovskite energy level. The invention also discloses a preparation method for the hole transport material. The hole transport material for the perovskite solar cell is prepared by an SUZUKI reaction step from raw materials 2,6-dibromo-4,8-bis(alkoxy)benzo[1,2-b:4,5-b']dithiophene and 4-(diphenylamino)phenylboronicacid. The preparation method has the characteristics of simplicity in operation, readily available raw materials, easiness for separation and high yield.

There is a problem in a door such as a sliding door (2) that when the pressure sensor (3) provided on the door cannot detect the contact of an object such as a hand, even if the hand moves away to avoid being caught The door will also keep closing and moving, causing people near the door to be hit by the closing door. In a mobile device, when the object detection device (8) arranged on the door (2) detects the contact of the object or when the departure of the object that the detection device has been in contact with is detected, the driving device (20) controls the sliding door The movement direction of (2) is reversed. Even when the contact of the object cannot be detected during the closing movement of the door (2) due to the softness of the contact object and/or the slow speed of the door (2) as a moving object, the drive of the door (2) will be detected by the detection device (8) When the departure of the object is detected, the control is reversed, thereby increasing safety.

An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

The invention relates to a graphene enhancement type InGaAs infrared detector. The graphene enhancement type InGaAs infrared detector solves the technical problem that an existing infrared detector is narrow in detection range and high in dark current. According to the graphene enhancement type InGaAs infrared detector, a buffer layer, an InGaAs absorbing layer with wavelength extended and a graphene cover layer which grow sequentially on a substrate form a pin detector structure. The invention discloses a method for growing the mismatch buffer layer on the substrate in a two-step method. An InAlAs ternary system material or InAsP of an InGaAs material which is suitable for metallorganic chemical vapor deposition technology growth and convenient to control and enables forbidden bandwidth to be larger than extended wavelength is adopted and can effectively avoid mismatch dislocation and be suitable for a transparent buffer layer structure with light entering at the back. The method for utilizing graphene to serve as the cover layer of the InGaAs infrared detector to expand the detection range and reduce dark current is provided, detector performance is improved, and the graphene enhancement type InGaAs infrared detector has wide application prospect.

The invention discloses a CuAlO2/Ga2O3 ultraviolet photodiode, comprising a top electrode and a bottom electrode, wherein a P-type crystal CuAlO2 film, an I-type beta-Ga2O3 film, and an N-type singlecrystal beta-Ga2O3 substrate are sequentially disposed between the two electrodes from the top electrode to the bottom electrode. The invention also discloses a preparation method of a CuAlO2/Ga2O3 ultraviolet photoelectric diode. The invention solves the problem that the Ga2O3-based PIN ultraviolet photoelectric diode cannot be prepared due to the shortage of p-type Ga2O3 material in the prior art.

The invention discloses a hole transporting material 2,6-bistriphenylamine-4,8-bis(alkoxy)benzo[1,2-B:4,5-B']dithiophene for a perovskite solar cell. The hole transporting material has simple molecular structures, high hole mobility, high efficiency, high conductivity and good solubility; aromatic functional radicals can be introduced into lateral groups; the perovskite solar cell prepared from the hole transporting material can be matched with the energy level of perovskite. The invention also discloses a preparation method of the hole transporting material. The hole transporting material for the perovskite solar cell is prepared and obtained by using 2,6-dibromo-4,8-bis(alkoxy)benzo[1,2-B:4,5-B']dithiophene and 4-(Diphenylamino)phenylboronicacid as raw materials through a one-step SUZUKI reaction. The preparation method provided by the invention has the characteristics that the operation is simple, the raw materials are low-cost and easily obtained, the separation is easy, and the yield is high.

The present invention discloses a manufacturing method of a nanocrystalline thin-film device for ultraviolet detecting, which includes: the soluble semi-conductor nanocrystalline material is dissolved into the solvent to obtain nanocrystalline solution; the nanocrystalline solution is on the substrate by using the spin-coating method or jet ink print method to form a homogeneous nanocrystalline thin film; the nanocrystalline thin film is proceed annealing treatment about 10-60 minutes at the temperature 100-350EDG C, then vapor plating electric pole on the nanocrystalline thin film. The method of the present invention compared with the semiconductor film ultraviolet detector of traditional gas-phase high-temperature growth can reduce the cost of the ultraviolet detecting optoelectronic device without a vacuum device, low film build temperature, simple preparation technique, and can develop the ''flexibility device''of the large size flexible device. Because nanocrystalline has super large surface area, the nanocrystalline thin-film device for ultraviolet detecting has the features of low dark current and high sensitivity, etc.

An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

The invention discloses a PBN-type InGaAs infrared detector, and belongs to the technical field of optoelectronic materials and devices. The invention solves a technical problem that an InGaAs detector has more dark currents in the prior art, thereby further enlarging the response range of the InGaAs detector. The detector consists of a window layer, a blocking layer, an absorption layer, a buffering layer and a substrate, wherein the window layer, the blocking layer, the absorption layer, the buffering layer and the substrate are sequentially arranged from the top to the bottom. The blocking layer is made of an Si-doped InAlAs material or Si-doped InAsP material which is larger in energy gap than the absorption layer and the window layer and is matched with the absorption layer in crystal lattice. The thickness of the blocking layer is from 100 nm to 300 nm. The detector can prevent the generation of the dark currents well, is high in quantum efficiency, is low in surface recombination, is wider in response range, and can be used for remote detection.

The invention provides a back-illuminated CMOS image sensor and a manufacturing method thereof. The structure such as a bonding pad can be formed through the application of four photomasks, so that the application of the photomasks is reduced; and furthermore, a formed metal gridding is connected with the bonding pad, and comprises a first metal wire positioned in a first isolation groove, a second metal wire positioned in a second isolation groove, and a third metal wire for connecting the bonding pad, the first metal wire and the second metal wire, so that incident light can be preferably limited through the metal gridding, the appearance of crosstalk is avoided, and the quality of the back-illuminated CMOS image sensor is improved. Further, negative pressure is applied onto the bonding pad, so that the negative pressure is also applied onto the metal gridding connected with the bonding pad, namely the negative pressure is applied on a first isolation structure formed in the first isolation groove and a second isolation structure formed in the second isolation groove, and the generation of noisy points and dark current can be inhibited through the negative pressure applied onto the first isolation structure and the second isolation structure.

An image pickup element includes: a photoelectric conversion film provided on a semiconductor substrate and including a chalcopyrite-based compound; an insulating film provided on a light incident surface side of the photoelectric conversion film; and a conductive film provided on the insulating film.

The invention discloses a quantum well infrared detector, which is prepared by a standard semiconductor process by using a GaAs/AlxGa1-xAs material system and utilizing an MBE or MOCVD technology to grow. The thickness of the GaAs potential well layer of a quantum well structure is 15 to 20 times of that of a AlxGa1-xAs potential well layer, the thickness of one cycle of a multi-quantum well layer is 80-120nm, and the number of cycles of the multi-quantum well layer is15 to 20, so the detector can work in a room temperature or a quasi-room temperature condition, and the absorption coefficient reaches more than 30%, thus effectively suppressing dark current and greatly reducing device noise. The detection rate can reach or get close to a theoretical limit value, the response speed is higher than 1GHz, and the maximum speed can reach 100GHz.