1results about How to "Suppress dark current" patented technology

This invention relates to an interface layer for optoelectronic devices, its fabrication method, and its application, belonging to the field of optoelectronic device technology. The hole interface layer prepared by this invention is based on a perovskite precursor, and the material is homologous to perovskite, resulting in better interfacial compatibility between the hole interface layer and the perovskite layer. This facilitates perovskite layer growth, reduces the interfacial defect density between the perovskite and hole interface layers, effectively suppresses detector dark current, and achieves high detectivity and device stability. The perovskite precursor of the hole interface layer specifically incorporates Sn. 2+ This invention can oxidize and form an oxide protective layer during heat treatment, suppressing the hole interface layer from being damaged by subsequent steps. Compared to the PEDOT:PSS transport layer, the hole interface layer of this invention can reduce the dark current of perovskite optoelectronic devices by an order of magnitude and achieve better device stability. This invention allows for flexible adjustment of the electrical parameters of the hole interface layer, enabling targeted optimization for specific applications.