5results about How to "Suppress dark current" patented technology

The invention discloses a PIN photoelectric detector based on epitaxial Ge on Si and a preparation method, and relates to the technical field of semiconductor photoelectric devices. The intrinsic Ge epitaxial layer is positioned on the upper surface of the N-type Si substrate; the P-type Ge region is positioned in the intrinsic Ge epitaxial layer and is close to the upper surface of the intrinsic Ge epitaxial layer; the first metal electrode and the second metal electrode are in ohmic contact with the P-type Ge region and the N-type Si substrate respectively. The intrinsic Ge layer is epitaxially grown on the N-type Si substrate to serve as an absorption region, a Si / Ge heterojunction PIN structure is constructed, and reverse injection of carriers is effectively inhibited by utilizing an energy band potential barrier of the Si / Ge heterojunction, so that the dark current of the device is remarkably reduced. Meanwhile, by accurately controlling the thickness of the intrinsic Ge epitaxial layer, the bandwidth and the responsivity of the device can be flexibly balanced so as to meet the requirements of different application scenes such as high-speed communication or high-sensitivity detection.

This invention relates to an interface layer for optoelectronic devices, its fabrication method, and its application, belonging to the field of optoelectronic device technology. The hole interface layer prepared by this invention is based on a perovskite precursor, and the material is homologous to perovskite, resulting in better interfacial compatibility between the hole interface layer and the perovskite layer. This facilitates perovskite layer growth, reduces the interfacial defect density between the perovskite and hole interface layers, effectively suppresses detector dark current, and achieves high detectivity and device stability. The perovskite precursor of the hole interface layer specifically incorporates Sn. 2+ This invention can oxidize and form an oxide protective layer during heat treatment, suppressing the hole interface layer from being damaged by subsequent steps. Compared to the PEDOT:PSS transport layer, the hole interface layer of this invention can reduce the dark current of perovskite optoelectronic devices by an order of magnitude and achieve better device stability. This invention allows for flexible adjustment of the electrical parameters of the hole interface layer, enabling targeted optimization for specific applications.

A single-phase oxide ferroelectric semiconductor thin film with low dark current and high UVC / UVA ratio, a preparation method and application in a self-powered solar blind detector belong to the technical field of semiconductor detectors.The single-phase oxide ferroelectric semiconductor thin film is composed of a ZnO thin film co-doped with Mg, Al and Li as an active absorption layer and a silicon substrate, is prepared through a co-doping strategy of Mg, Al and Li, and is applied in a solar blind detector through a matching electric field heat treatment process, so that the band gap of pure ZnO is effectively widened to the solar blind region, the built-in electric field generated by the donor-acceptor defect dipole constructed in the crystal lattice is utilized, and the high insulating state of the material is maintained through the charge compensation effect, so that the high-performance self-powered solar blind ultraviolet detection with low dark current, high responsivity and high on-off ratio is realized under zero applied bias.

The utility model discloses an X-ray vertical channel field effect transistor detector, which comprises an X-ray sensing part, a current modulation part and a charge coupling induction part, the X-ray sensing part is composed of a high-atomic-number semiconductor crystal and a corresponding semiconductor structure, absorbs high-energy X-rays and generates electron / hole pairs; the current modulation part is composed of a porous source electrode, a semiconductor channel and a drain electrode; the charge coupling induction part is composed of a gate electrode, a dielectric layer and a porous source electrode. The dielectric layer is over the X-ray sensing layer. According to the utility model, the photocurrent is amplified by utilizing the gain of the field effect transistor, so that high-sensitivity X-ray detection is obtained; the X-ray sensing layer is arranged between the grid electrode and the dielectric layer, dark current is blocked through the dielectric layer, an incident X-ray signal is transmitted to light current through charge coupling induction, and low-noise X-ray detection is achieved.

The invention discloses a viologen-based lead halide photochromic semiconductor material and a synthesis method and application thereof, and belongs to the technical field of material preparation, the synthesis method comprises the following steps: mixing a lead source, 1-(4-sulfophenyl)-4, 5-diphenyl-1, 3-pentanedione and 1-(4-sulfophenyl)-4, 5-diphenyl-1, 3-pentanedione to obtain a mixture; the viologen-based lead halide photochromic semiconductor material is prepared by mixing 4, 4 '-dipyridyl (HPhSQ) with a solvent and carrying out a heating reaction under a closed condition. The solvent is prepared by uniformly mixing DMF (N, N-dimethylformamide), hydrochloric acid and water. The viologen-based lead halide photochromic semiconductor material provided by the invention has reversible photochromic properties (ultraviolet coloring and thermal fading), excellent photoelectric properties (enhancing photocurrent, inhibiting dark current and high detection sensitivity) and good thermal stability (greater than or equal to 200 DEG C); and the hydrothermal synthesis method is simple and convenient to operate, high in yield, high in product purity and crystallinity and suitable for large-scale preparation of high-performance photoelectric detectors.