PBN-type InGaAs infrared detector

An infrared detector, n-type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of suppressing dark current generation, wide response range, and improving quantum efficiency

Inactive Publication Date: 2015-12-23
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, there is no structural material system for InGaAs detectors that can well solve the problem of dark current.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • PBN-type InGaAs infrared detector
  • PBN-type InGaAs infrared detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] A PBN-type InGaAs infrared detector structure with a cutoff wavelength of 2.6 μm is: sequentially grown on an n-type InP substrate with a thickness of 1 μm and a Si doping concentration of 2×10 18 cm -3 n-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3 μm and a Si doping concentration of 8×10 16 cm -3 In 0.82 Ga 0.18 As absorption layer, regrowth thickness is 200nm, Si doping concentration is 2×10 16 cm -3 In 0.82 al 0.18 As barrier layer, the final growth thickness is 100nm, Be doping concentration is 2×10 17 cm -3 p-type In 0.82 Ga 0.18 The As window layer forms a PBN detector structure.

[0029] The manufacturing method of the above-mentioned PBN-type InGaAs infrared detector can firstly grow Si-doped InAs on the n-type InP substrate by using the MOCVD system on the InP substrate using a two-step method. 0.60 P 0.40 The buffer layer, that is, the first step is to grow a layer of InAs with a thickness of 100nm at a temperature...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a PBN-type InGaAs infrared detector, and belongs to the technical field of optoelectronic materials and devices. The invention solves a technical problem that an InGaAs detector has more dark currents in the prior art, thereby further enlarging the response range of the InGaAs detector. The detector consists of a window layer, a blocking layer, an absorption layer, a buffering layer and a substrate, wherein the window layer, the blocking layer, the absorption layer, the buffering layer and the substrate are sequentially arranged from the top to the bottom. The blocking layer is made of an Si-doped InAlAs material or Si-doped InAsP material which is larger in energy gap than the absorption layer and the window layer and is matched with the absorption layer in crystal lattice. The thickness of the blocking layer is from 100 nm to 300 nm. The detector can prevent the generation of the dark currents well, is high in quantum efficiency, is low in surface recombination, is wider in response range, and can be used for remote detection.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and devices, in particular to a PBN-type InGaAs infrared detector. Background technique [0002] Photodetectors are the core of aerospace remote sensing instruments, which restrict the level and development of aerospace optical remote sensing instruments. Detectors made of InGaAs materials have the advantages of high sensitivity, fast response, good radiation resistance, and room temperature operation, making them ideal materials for space remote sensing in the near-infrared band. At present, in the design of the detector structure, especially in the semiconductor photovoltaic infrared detector, the PIN structure is adopted. However, with the rapid development of material preparation technology and device structure design, people are eager to develop new infrared detectors to improve the performance of current photodetector devices in terms of detector response range and dark cur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/101
CPCH01L31/03046H01L31/101
Inventor 张志伟缪国庆宋航蒋红李志明黎大兵孙晓娟陈一仁
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap