Back-illuminated CMOS image sensor and manufacturing method thereof
A technology of an image sensor and a manufacturing method, applied in radiation control devices and other directions, to achieve the effects of suppressing noise and dark current, avoiding crosstalk, and improving quality
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[0044] The back-illuminated CMOS image sensor proposed by the present invention and its manufacturing method will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0045] First, please refer to figure 1 , which is a schematic flowchart of a manufacturing method of a back-illuminated CMOS image sensor according to an embodiment of the present invention. Such asfigure 1 As shown, the manufacturing method of the back-illuminated CMOS image sensor includes:
[0046] Step S10: providing a logic wafer and a pixel wafer bonded together;
[0047] Step S11: using a first photomask to form a pad area, a f...
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