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PNIN type InGaAs infrared detector

A technology of infrared detectors and detectors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as incompatibility, achieve good versatility, inhibit transportation, and achieve the effect of performance

Inactive Publication Date: 2015-01-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this technology can effectively suppress dislocations and improve the quality of the absorbing layer, thereby improving the performance of the detector. However, this technology needs to grow a very thick buffer layer to grow the absorbing layer of the required composition.
In addition, since the InGaAs buffer layer is opaque, this buffer layer structure is not suitable for arrays and focal plane detectors that often adopt backside illumination and flip-down packaging schemes.

Method used

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  • PNIN type InGaAs infrared detector

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Effect test

Embodiment 1

[0021] Combine figure 1 To illustrate this embodiment, a PNIN-type InGaAs infrared detector with a cut-off wavelength of 2.6 μm is structured as follows: a thickness of about 1 μm and a doping concentration of 2×10 are sequentially grown on an n-type InP substrate. 18 cm -3 N-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3μm and a doping concentration of 8×10 16 cm -3 N-type In 0.82 Ga 0.18 As absorption layer, the thickness of the re-growth is 100nm, and the doping concentration is 5×10 17 cm -3 N-type In 0.82 Ga 0.18 As insertion layer, the final growth thickness is 1μm, and the doping concentration is 2×10 18 cm -3 P-type In 0.82 Al 0.18 As cover layer, forming the PNIN detector structure.

[0022] In this embodiment, a MOCVD system is first used to grow Si-doped InAs on an n-type InP substrate using a two-step method. 0.60 P 0.40 Buffer layer, first grow a layer of InAs about 1μm at a temperature of 450℃ 0.60 P 0.40 , And then raise the temperature to...

Embodiment 2

[0024] A PNIN-type InGaAs infrared detector with a cut-off wavelength of 2.6μm. Its structure is: sequentially grown on an n-type GaAs substrate with a thickness of about 1μm and a doping concentration of 2×10 18 cm -3 N-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3μm and a doping concentration of 8×10 16 cm -3 N-type In 0.82 Ga 0.18 As absorption layer, the thickness of the re-growth is 150nm, the doping concentration is 5×10 17 cm -3 N-type In 0.82 Ga 0.18 As insertion layer, the final growth thickness is 1μm, and the doping concentration is 2×10 18 cm -3 P-type In 0.82 Al 0.18 As cover layer, forming the PNIN detector structure.

[0025] In this embodiment, a MOCVD system is used to grow Si-doped InAs on an n-type GaAs substrate using a two-step method. 0.60 P 0.40 Buffer layer, first grow a layer of InAs about 1μm at a temperature of 450℃ 0.60 P 0.40 , And then raise the temperature to 580℃, the buffer layer InAs 0.60 P 0.40 Annealing recrystallizati...

Embodiment 3

[0027] A PNIN-type InGaAs infrared detector with a cut-off wavelength of 2.6μm. Its structure is: sequentially grown on an n-type InP substrate with a thickness of about 1μm and a doping concentration of 2×10 18 cm -3 N-type InAs 0.60 P 0.40 Buffer layer, continue to grow with a thickness of 3μm and a doping concentration of 8×10 16 cm -3 N-type In 0.82 Ga 0.18 As absorption layer, the thickness of re-growth is 50nm, the doping concentration is 5×10 17 cm -3 N-type In 0.82 Ga 0.18 As insertion layer, the final growth thickness is 1μm, and the doping concentration is 2×10 18 cm -3 P-type In 0.82 Al 0.18 As cover layer, forming the PNIN detector structure.

[0028] In this embodiment, a MOCVD system is first used to grow Si-doped InAs on an n-type InP substrate using a two-step method. 0.60 P 0.40 Buffer layer, first grow a layer of InAs about 1μm at a temperature of 450℃ 0.60 P 0.40 , And then raise the temperature to 580℃, the buffer layer InAs 0.60 P 0.40 Annealing recrystallizatio...

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Abstract

The invention provides a PNIN type InGaAs infrared detector and belongs to the optoelectronic material and device application field. The PNIN type InGaAs infrared detector is a PNIN type detector which sequentially comprises a substrate, a buffer layer, an extended wavelength InGaAs absorption layer, an n type insert layer and a cover layer; and the thickness of the n type insert layer ranges from 50nm to 150nm, and the components of the n type insert layer are the same with the components of the extended wavelength InGaAs absorption layer. The n type insert layer which is additionally arranged on the infrared detector can suppress the transport of carriers through generating band steps, so that dark current can be lowered, and thus the photoelectric performance of the infrared detector can be improved; and requirements for InGaAs material epitaxial growth can be lowered, so that the PNIN type InGaAs infrared detector can work in a wider wavelength range. The PNIN type InGaAs infrared detector of the invention is applicable to back light entering and flip-chip package structures, and has high universality.

Description

Technical field [0001] The invention relates to the application field of optoelectronic materials and devices, in particular to a PNIN type InGaAs infrared detector. Background technique [0002] At present, the PIN structure is adopted in the structural design of InGaAs infrared detectors, especially in semiconductor photovoltaic infrared detectors. However, with the rapid development of material preparation technology and device structure design, people are eager to develop new infrared detectors to improve the performance of current optoelectronic devices. Especially for space remote sensing detectors, there is an urgent need to design an infrared detector structure that can effectively suppress the dark current noise of the device and increase the detection range. [0003] The study found that because InGaAs material is a full-composition direct band gap material, the application range of the detector can be effectively expanded by increasing the In composition. However, incr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/105H01L31/0304
CPCH01L31/03042H01L31/101H01L31/105
Inventor 张志伟缪国庆宋航蒋红黎大兵孙晓娟陈一仁李志明
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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