24results about How to "Improve the withstand voltage level" patented technology

The invention relates to a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a substrate; the base comprises a substrate and an epitaxial layer which are stacked; the main junction is positioned in the epitaxial layer; at least one field limiting ring located in the epitaxial layer; the junction termination extension region is located in the epitaxial layer; the junction termination expansion region and the field limiting ring have an overlapping region; the cut-off ring is located in the epitaxial layer; wherein the surfaces of one sides, far away from the substrate, of the main junction, the field limiting ring, the cut-off ring and the junction termination extension region are flush with the surface, far away from the substrate, of the epitaxial layer; the main junction, the field limiting ring and the cut-off ring are arranged at intervals along a first direction, and the first direction is perpendicular to a direction pointing to the main junction along the substrate; the field oxide layer is at least located on the sides, away from the substrate, of the epitaxial layer, the junction termination extension region and the cut-off ring; the field plates are respectively positioned on one sides, far away from the substrate, of the main junction and the field oxide layer; wherein the doping types of the substrate and the cut-off ring are the same, and the doping types of the main junction, the field limiting ring and the junction termination expansion region are the same. The semiconductor structure has a high withstand voltage level.

The utility model provides a high-voltage connector for new energy storage, which comprises a plug shell, a conductive plug bush, a plug end assembly, a cable locking assembly and a lock catch assembly, the plug end assembly comprises an anti-contact finger element, a sealing gasket and a sealing pressing block, and the cable locking assembly comprises a locking ring, a plug and a locking nut. The connector is provided with the anti-contact finger element, so that fingers of an operator are prevented from being inserted into the conductive plug bush by mistake during assembly; a creepage groove is arranged, so that an enough electrical safety distance is ensured, and the voltage withstanding grade, the safety and the reliability of the connector are improved; a plurality of sealing, limiting and locking matching structures are arranged, so that the waterproof and dustproof performance and the assembly precision of the connector are improved, the assembly firmness is enhanced, and parts are prevented from falling off; the sealing pressing block is in damping fit with the first sleeve part, and when the plug and the socket are connected and are not locked, the sealing pressing block can still rotate, so that the direction of the connector is convenient to adjust, the assembly flexibility is improved, the construction process is more convenient and efficient, and the connector is suitable for more application scenes.

The invention provides a high-voltage electric energy measuring device optimization method and system, and relates to the technical field of electric power. According to the specific scheme, a three-dimensional model composed of a solid-sealed polar pole and a shielding ring is established based on actual geometric parameters of the solid-sealed polar pole and the shielding ring in the high-voltage electric energy measuring device; simulating the three-dimensional model to obtain simulated electric field intensity distribution around the solid-sealed polar pole and the shielding ring; if the shielding ring does not meet the electric field intensity distribution condition, a pre-trained electric field intensity prediction model is adopted to process candidate geometric parameters of the shielding ring, actual geometric parameters of the solid-sealed polar pole and operation parameters of the high-voltage electric energy measurement device so as to construct a target function; and solving the target function by taking the situation that the electric field intensity distribution at the top end of the solid-sealed polar pole meets a preset electric field intensity safety condition as a target to obtain a target geometric parameter of the shielding ring, and optimizing the high-voltage electric energy measuring device. According to the invention, the overall performance of the high-voltage electric energy measuring device can be optimized.

The utility model discloses a grabbing type sea cucumber fishing robot. The sea cucumber collecting robot comprises a robot frame, a five-degree-of-freedom mechanical arm and a sea cucumber collecting device, a mechanical arm base and a sea cucumber collecting device are fixedly arranged on the top of the robot frame, a sealing bin is fixedly arranged at the bottom of the robot frame, and vertical propellers and horizontal propellers are fixedly arranged on the periphery of the robot frame. And the synchronous pulley II is driven by the stepping motor I to realize the rotary motion of the mechanical arm. According to the underwater robot, the five-degree-of-freedom mechanical arm and the eight-shaft propeller are adopted, and free movement and flexible grabbing of the robot under water are achieved. The sea cucumber catching robot can replace manpower to catch sea cucumbers and is not limited by seasons. The water pressure borne by the device is far higher than that borne by human beings, so that the device has higher safety. The sea cucumber catching robot is used for replacing manual work, and potential hazards of the marine environment to the body health of a caught person are effectively avoided.

The application provides an electrolysis chamber of a proton exchange membrane electrolyzer and the proton exchange membrane electrolyzer. The electrolysis chamber of the proton exchange membrane electrolyzer comprises: bipolar plates, sealing rubber lines, anode diffusion layers, proton exchange membrane assemblies, cathode diffusion layers, sealing rubber lines and bipolar plates which are sequentially stacked; the side of the bipolar plate facing the proton exchange membrane assembly is provided with a groove; the side of the sealing rubber line facing the bottom of the groove is provided with a first inclined surface; the bottom of the groove is provided with a booster part; the side of the booster part facing the sealing rubber line is provided with a second inclined surface; and the second inclined surface is in close contact with the first inclined surface. The friction between the sealing rubber line and the bipolar plate in the electrolysis chamber of the proton exchange membrane electrolyzer is large, so that the pressure resistance grade of the electrolyzer is improved, the sealing effect of the sealing rubber line in different environments is ensured, the electrolyzer can withstand a pressure of up to 7MPa, and the hydrogen production efficiency and safety are improved.

The present application relates to a kind of oil pipe dosing device, to solve the problem of traditional dosing method medicament uniform dispersion to the bottom of oil pipe.The device includes oil pipe, adjacent oil pipe male oil pipe joint and female oil pipe joint are threadedly connected;N connection flat tubes, which are closely attached to the outer wall of the oil pipe, the n connection flat tubes are connected into a complete annular sleeve in the circumferential direction of the oil pipe, and n is an even number;Wherein, from the female oil pipe joint to the extension direction of the oil pipe body, the width of the inner cavity of the connection flat tube gradually decreases along the radial direction of the oil pipe, so that the inner cavity of the connection flat tube forms an expanded diameter structure at the connection of the upper and lower adjacent oil pipes;The connection flat tube is made of wear-resistant and corrosion-resistant composite material, and an antistatic coating is provided on the outer side wall of the connection flat tube.The present application does not need to modify the existing oil pipe structure, and the modular design improves the installation efficiency, is suitable for thick oil, high sulfur / wax oil well, can reduce the load of pumping equipment, and prolong the service life of oil pipe.

The invention discloses a monolithic integrated diode amplitude limiting unit based on quasi-vertical MPSs and a preparation method thereof. The amplitude limiting unit comprises two silicon-based GaN quasi-vertical MPSs located on a silicon substrate, and a forward amplitude limiting diode and a reverse amplitude limiting diode are formed; the passivation layer covers the two MPSs and the silicon substrate; the thin film protection resistor is located in the passivation layer; the first interconnection metal connects the first end of the resistor with the cathode of the reverse amplitude limiting diode; the second interconnection metal forms a voltage input end, a voltage output end, a first reference voltage end and a second reference voltage end, the cathode of the forward amplitude limiting diode is connected with the first reference voltage end, and the anode of the forward amplitude limiting diode, the cathode of the reverse amplitude limiting diode and the first end of the thin film protection resistor are connected with the voltage output end. And the anode of the reverse amplitude limiting diode is connected with a second reference voltage end, and the second end of the resistor is connected with the voltage input end 1. The diode amplitude limiting unit provided by the invention has relatively high voltage resistance and can be applied to a high-power condition.

The present application discloses a switching power supply and an electronic device, wherein the switching power supply comprises: an inverter module, the input end of the inverter module is configured to receive a first DC signal; a resonance module, the input end of the resonance module is connected to the output end of the inverter module; a transformer module, the input end of the transformer module is connected to the output end of the resonance module; a rectifier module, the input end of the rectifier module is connected to the output end of the transformer module, and the output end of the rectifier module is configured to output a second DC signal; a control module, connected to the control end of the inverter module, and the control module is configured to output a constant frequency control signal to the control end of the inverter module, so that the resonance module works at a resonance point. Through the above method, the stability of the output voltage of the switching power supply can be guaranteed.

The utility model provides a kind of load device for high-voltage power supply test, including insulating box, programmable logic controller PLC and processing unit. Insulating box is equipped with liquid level detection component and resistance module, and is loaded with insulating liquid. Liquid level detection component detects the liquid level in insulating box. Programmable logic controller PLC is connected with liquid level detection component, and normal liquid level value is set. Processing unit is controlled by programmable logic controller PLC, and processing unit is connected with the output end of programmable logic controller PLC by first intermediate relay, and first intermediate relay has the open circuit state of path state connected with processing unit and disconnected with processing unit. Liquid level detection component detects that liquid level does not reach normal liquid level value, and first intermediate relay is in path state, and processing unit works, and insulating liquid is injected into insulating box;Liquid level detection component detects that liquid level reaches normal liquid level value, and first intermediate relay is in open circuit state, and processing unit does not work.

This application relates to the field of material sealing technology, and particularly to a high-performance insulating ceramic sealing method for neutron tubes. The method includes: sequentially performing organic solvent ultrasonic cleaning and argon plasma etching activation treatment on the sealing surface of a cylindrical high-purity alumina ceramic part, followed by magnetron sputtering deposition of a titanium transition layer to obtain a ceramic part with a titanium transition layer; acid washing to remove the oxide layer from the sealing surface of a Kovar alloy cylindrical flange, followed by cleaning and drying to obtain a metal sealing part; preparing an active brazing filler metal sheet; sequentially assembling the sheet to form a pre-assembled assembly; placing the pre-assembled assembly in a vacuum brazing furnace, applying axial preload to complete the sealing, followed by controlled cooling to form a sealing part with an airtight brazed joint; and annealing to obtain the finished sealing assembly. This method solves the problems of low dielectric strength, large differences in thermal expansion coefficients, and difficulty in controlling interface quality in existing technologies.

The invention provides an electron gun for a traveling wave tube and the traveling wave tube. The electron gun comprises an anode piece; the focusing electrode piece is positioned in the anode piece; the insulating support piece is positioned between the anode piece and the focusing pole piece; the cathode piece is positioned in the focusing electrode piece; the inner insulating support is positioned between the cathode piece and the focusing pole piece and is used for relatively fixing the cathode piece and the focusing pole piece; the focusing pole piece comprises a radially-reduced inward-retracting structure; and the insulating supporting piece is fixed between the inner receiving structure and the anode piece, so that the electron gun can meet the requirement that a traveling wave tube with the working frequency range of more than 0.1 THz is more than 17kV in withstand voltage.

An electrical connector device belongs to the technical field of battery energy source. It comprises a shell and a shell cover, and further comprises a pair of power terminals, a signal terminal and an explosion-proof valve. The pair of power terminals are symmetrically arranged at the middle positions of the shell cavity. The explosion-proof valve and the signal terminal correspond to the middle positions of the pair of power terminals and are separately arranged at the upper and lower parts of the pair of power terminals. The shell is formed with a gas permeable hole at the middle of the bottom side wall. The power terminals, the signal terminal and the explosion-proof valve are arranged through the shell cavity. An insulating plate covering the explosion-proof valve is arranged at the upper position in the shell cavity. The shell is provided with a signal wire clamping groove on the top side wall corresponding to the signal terminal, and power wire positioning grooves are formed at the left and right sides of the signal wire clamping groove. The signal wire is connected with the signal terminal and is led out of the shell through the signal wire clamping groove. Advantage: The modular structure design solves the problems of layout confusion, complex installation and safety hazards in the prior art.

The utility model relates to the technical field of PFA hand valves, in particular to a PFA hand valve which comprises a hand valve body, and a sealing operation mechanism is arranged in the hand valve body and a valve cover. According to the manual valve, the leakage risk is reduced when the manual valve is used, the pollution problem of a traditional valve in a high-purity scene is solved, meanwhile, the annular sealing groove is designed in the contact face of the manual valve body and the diaphragm, the pressure resistance grade is remarkably improved, and due to the streamline design and the smooth flow channel surface of an internal flow channel of the manual valve body, the sealing performance is improved. The flow resistance of fluid in the manual valve body is remarkably reduced, fluid turbulence is reduced, pressure loss is reduced, the response speed is increased, the anti-skid design is arranged on the surface of the operating handle, friction force is increased, slipping during operation is prevented, the operation comfort can be improved, the operating handle and the diaphragm are connected through the high-strength corrosion-resistant piston, and the service life of the operating handle is prolonged. And the service life of the manual valve is longer.

According to the circuit board and the circuit breaker in mortise and tenon connection, the ceramic capacitors are combined in series and in parallel, the ceramic capacitors with corresponding capacitance values are selected for voltage division according to the final capacitance value to be reached, and the voltage withstand level of the whole capacitor is remarkably improved, so that the national standard thunder and lightning pulse test requirements are met; the plurality of ceramic capacitors in each group of units are connected in parallel, so that voltage stress can be dispersed, the pressure burden of a single capacitor is reduced, the one-to-one corresponding connection between the adjacent units ensures uniform voltage distribution, and some capacitors are prevented from bearing overhigh voltage. Furthermore, by adopting an assembly mode of a tenon-and-mortise structure, the space interference with other functional parts on the pole is avoided, and the matching with the installation space of the existing pole is realized.

The utility model provides a transverse voltage-resistant planar gate silicon carbide MOSFET, which is characterized in that the lower side surface of a P-type well region is connected to the upper side surface of a silicon carbide insulating substrate, the P-type well region is provided with an N-type voltage-resistant region, a P-type source region and a first N-type source region, and the P-type source region is connected to the first N-type source region; the lower side surface of the N-type well region is connected to the upper side surface of the silicon carbide insulating substrate, the left side surface of the N-type well region is connected to the right side surface of the P-type well region, and the N-type well region is provided with a second N-type source region and a P-type voltage-resistant region; the gate dielectric layer is respectively connected with the P-type well region, the N-type well region, the N-type voltage-withstanding region and the P-type voltage-withstanding region; the source metal layer is respectively connected with the P-type source region and the first N-type source region; the drain metal layer is connected to the second N-type source region; the gate metal layer is connected to the gate dielectric layer, the voltage endurance capability of the device is improved, and the thickness of the epitaxial layer does not need to be increased.

The utility model relates to the technical field of cable conductors, in particular to an energy-saving consumption-reducing monofilament mixed stranded cable conductor, which comprises a conductor, the conductor comprises a plurality of buckle type special-shaped monofilaments and a plurality of circular monofilaments, the cross section of each circular monofilament is circular, and the buckle type special-shaped monofilaments are interlocked and meshed. The utility model has the following advantages: (1) buckle type special-shaped monofilaments and round monofilaments with specific specifications are produced, the number of filaments is small, the number of times of wire drawing and die changing is small, the production efficiency can reach the round monofilament wire drawing capacity and production efficiency on the premise that two wire drawing machines are matched, the capacity is high, the requirement on equipment is low, and the requirement on the operating skill of workers is not high; and (2) low-oxygen copper and oxygen-free copper are adopted, only the inner-layer circular monofilament needs to be replaced when the resistor richness is too large or too small, the inner-layer circular monofilament is easy to repair, the later-period out-of-period problems are few, the after-sale cost is reduced, and copper material consumption can be saved to the maximum extent.

The invention belongs to the technical field of electrical materials, and discloses a process method for improving the pressure resistance of a copper-chromium contact prepared from a vacuum casting base material, which comprises the following steps: preparing a copper-chromium contact part and carrying out a pressure resistance test, recording a pressure resistance result, carrying out solid solution and aging treatment on the copper-chromium contact part, and obtaining the pressure resistance of the copper-chromium contact part. The copper-chromium contact part subjected to solid solution and aging treatment is subjected to accurate grinding treatment, the surface of the copper-chromium contact part subjected to ultrasonic treatment is covered with industrial alcohol, ultrasonic treatment is carried out, the copper-chromium contact part subjected to ultrasonic treatment is put into a temperature constant-temperature box to be dried, then a voltage withstanding test is carried out, and a voltage withstanding test result is recorded. Through solid solution aging, accurate grinding, ultrasonic treatment and drying treatment, the internal grain structure of the copper-chromium contact is homogenized, the surface roughness of the contact is obviously reduced, the surface quality of the contact is improved, the voltage withstanding level of a part is improved, the surface roughness is kept to be smaller than or equal to Ra2, and therefore the breakdown voltage of the part is improved.

The application provides a high-voltage GaN-based double-channel super-junction HEMT device and a preparation method thereof, and belongs to the technical field of semiconductors, and is used for solving the problem of the voltage resistance of a modulated GaN HEMT device. The high-voltage GaN-based double-channel super-junction HEMT device comprises a main body structure, a source structure, a drain structure and a gate structure. The main body structure comprises, from bottom to top, a substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer and a passivation layer. The barrier layer and the channel layer interface generate two-dimensional electron gas. The channel layer and the back barrier layer interface generate two-dimensional hole gas. The upper part of the source structure forms ohmic contact with the two-dimensional electron gas. The lower part of the source structure forms ohmic contact or Schottky contact with the two-dimensional hole gas. The drain structure forms ohmic contact with the two-dimensional electron gas. The gate structure is arranged between the source structure and the drain structure and is connected to the barrier layer. The voltage resistance level of the device can be improved without affecting the conduction characteristics of the device.

The invention discloses a quasi-vertical JBS diode and a monolithic integrated DRU three-phase rectification unit. The quasi-vertical JBS diode sequentially comprises a Si substrate, an N + GaN conduction layer and an N-type GaN drift layer from bottom to top. Groove structures distributed in a concentric ring shape are arranged in the top layer area of the N-type GaN drift layer, and P-type BN materials doped with Mg are arranged in the groove structures and on the side face of the N-type GaN drift layer. An anode is arranged on the surface of the N-type GaN drift layer; and cathodes are arranged at intervals around the N-type GaN drift layer on the surface of the N + GaN conduction layer. According to the invention, the withstand voltage value of the diode can be improved. The monolithic integration DRU three-phase rectification unit circuit comprises three alternating current input ends, two rectified direct current output ends and diode groups corresponding to six rectification bridge arms respectively, the diodes are all quasi-vertical JBS diodes, the integration level can be improved, the circuit size can be reduced, the circuit reliability can be improved, and a voltage application window can be widened.

The present invention relates to a silicon carbide Schottky semiconductor device and a manufacturing method thereof, which comprises a first electron type semiconductor layer, a second electron type semiconductor layer, a first hole type semiconductor layer, a second hole type semiconductor layer, a first anode structure, a second anode structure and a cathode electrode layer. The first anode structure is arranged on the second electron type semiconductor, the second anode structure is arranged on the second hole type semiconductor layer, the doping concentration of the first electron type semiconductor layer is greater than the doping concentration of the second electron type semiconductor layer, and the doping concentration of the first hole type semiconductor layer is less than the doping concentration of the second hole type semiconductor layer. The silicon carbide Schottky semiconductor device and the manufacturing method thereof can solve the problem that the existing silicon carbide Schottky semiconductor device is difficult to increase the breakdown voltage while reducing the forward working voltage, thereby reducing the forward conduction loss of the silicon carbide Schottky semiconductor device and improving the working efficiency of the silicon carbide Schottky semiconductor device.

This invention discloses a method and system for suppressing capacitor voltage fluctuations in a modular multilevel converter (MMC), belonging to the field of power electronics technology. The system includes a main MMC circuit and a dual bandpass filter module. The MMC main circuit consists of a three-phase bridge arm group, bridge arm inductors, and several sub-modules. The dual bandpass filter module consists of a first bandpass filter and a second bandpass filter, both employing a series inductor and capacitor topology, and are directly connected in parallel with the capacitors of each sub-module. The center frequency of the first bandpass filter matches the fluctuation component corresponding to the fundamental frequency of the MMC sub-module capacitor voltage, and the center frequency of the second bandpass filter matches the fluctuation component corresponding to the second harmonic frequency of the sub-module capacitor voltage. This invention requires no complex control algorithm, has a simple structure, can significantly reduce the capacitor voltage fluctuation amplitude, and reduces the capacity required for sub-module capacitor selection, making it suitable for various MMC application scenarios.

A kind of urban rail electric pantograph raising control device belongs to the field of rail transit technology, mainly composed of a box body and a pressure controller and a compressor inside the box body, a switch is arranged on the box body, the switch is connected to the contactor coil, controls the power input of the contactor, the contactor switch is electrically connected to the control box, controls the power input of the control box, the control box is also electrically connected to the pressure controller and the compressor respectively, the on-off of the circuit where the pressure controller is located controls the start and stop of the compressor, and the air outlet of the compressor is connected to the pantograph raising air circuit. The present invention has the characteristics of beautiful appearance, compact structure, high reliability, short inflation time, low noise, low maintenance cost, etc., meets the function of automatically inflating the pantograph raising pipeline and maintaining the pantograph raising pipeline air pressure when the train pantograph raising pipeline air pressure is insufficient, and stabilizes the pantograph contacting the grid state, which greatly improves the convenience of pantograph raising control.

The invention relates to an MOSFET device based on NiO gate modulation and a preparation method thereof. The device comprises a substrate layer, a first N-type GaN layer, a second N-type GaN layer, a P-type GaN layer and a third N-type GaN layer which are sequentially arranged from bottom to top. The gate step extends into the second N-type GaN layer from the two ends of the upper surface of the third N-type GaN layer; the gate structure extends from the upper surface of the third N-type GaN layer to the bottom of the gate step; a source recess; a source electrode; a drain electrode; and the NiO modulation layer extends from the bottom of the gate step to the upper surface of the first N-type GaN layer. The interface state of the second N-type GaN layer and electrons on the surface of the second N-type GaN layer are depleted through the NiO modulation layer, a depletion region is generated, the electric field distribution range of the device is widened, the peak electric field intensity of the device is reduced, and the voltage withstanding level of the device is improved.

The application discloses a kind of annular fracturing gas lift liquid discharge pipe columns and operating methods, including multiple groups of gas lift tools and throttling tools, when annular injection gas, gas enters cavity from the gap between the body of gas lift tool and gland, when injection pressure is greater than the pressure in gas cavity, lower valve body is pushed up, and the disengagement between upper ball valve and bidirectional valve seat, injection gas enters the tubing through bidirectional valve seat, and the liquid in the tubing is discharged by the gas lift tool;When injection pressure is lower than the pressure in gas cavity, upper ball valve is seated in bidirectional valve seat, and oil, casing passage is blocked, injection gas pushes annular fluid surface down, and the process of lower gas lift tool is repeated to open the liquid discharge operation, until the liquid in the tubing is discharged completely by the lowermost gas lift tool.The pipe column can realize rapid liquid discharge after fracturing, without well killing, down liquid discharge pipe column completion, avoid the damage to reservoir by well killing, ensure the modification effect, effectively improve the construction efficiency, reduce the operation cost.