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An ultraviolet photodiode based on NiO/Ga2O3 and a preparation method thereof

A technology of diodes and ultraviolet light, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of lack of materials and inability to prepare ultraviolet photodiodes, etc., and achieve excellent detection performance, high critical breakdown electric field strength, and large forbidden band width Effect

Active Publication Date: 2018-12-18
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this invention is to provide a kind of based on NiO / Ga 2 o 3 The UV photodiode solves the problem of p-type Ga in the prior art 2 o 3 The lack of materials prevents the preparation of Ga 2 o 3 Problems with base pn junction UV photodiodes

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  • An ultraviolet photodiode based on NiO/Ga2O3 and a preparation method thereof
  • An ultraviolet photodiode based on NiO/Ga2O3 and a preparation method thereof

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Embodiment 1

[0040] The present invention is based on NiO / Ga 2 o 3 The preparation method of the UV photodiode, such as figure 2 As shown, the specific steps are as follows:

[0041] Step 1. For N-type single crystal β-Ga 2 o 3 The substrate is cleaned, and after cleaning, it is dried with nitrogen gas for use. The cleaning process is as follows: use cleaning solution-acetone-alcohol-deionized water to clean the sample step by step;

[0042] Step 2, N-type single crystal β-Ga after cleaning in step 1 2 o 3 Intrinsic single crystal β-Ga 2 o 3 Homoepitaxial layer growth, intrinsic single crystal β-Ga 2 o 3 During the growth of the homoepitaxial layer, chemical vapor deposition equipment is used to deposit metal gallium with a purity of 99.99999% as the gallium source, and argon gas is used as the carrier gas. The argon gas flow rate is controlled at 100 ml / min, and the reaction chamber is heated to 800 ° C Introduce oxygen as the growth source gas, the oxygen flow rate is controll...

Embodiment 2

[0047] The present invention is based on NiO / Ga 2 o 3 The preparation method of the UV photodiode, such as figure 2 As shown, the specific steps are as follows:

[0048] Step 1. For N-type single crystal β-Ga 2 o 3 The substrate is cleaned, and after cleaning, it is dried with nitrogen gas for use. The cleaning process is as follows: use cleaning solution-acetone-alcohol-deionized water to clean the sample step by step;

[0049] Step 2, N-type single crystal β-Ga after cleaning in step 1 2 o 3 Intrinsic single crystal β-Ga 2 o 3 Homoepitaxial layer growth, intrinsic single crystal β-Ga 2 o 3 During the growth of the homoepitaxial layer, chemical vapor deposition equipment was used to deposit metal gallium with a purity of 99.99999% as the gallium source, and argon as the carrier gas. The flow rate of the argon gas was controlled at 200 ml / min, and the reaction chamber was heated to 900°C. Introduce oxygen as the growth source gas, control the oxygen flow rate to 5 m...

Embodiment 3

[0054] The present invention is based on NiO / Ga 2 o 3 The preparation method of the UV photodiode, such as figure 2 As shown, the specific steps are as follows:

[0055] Step 1. For N-type single crystal β-Ga 2 o 3 The substrate is cleaned, and after cleaning, it is dried with nitrogen gas for use. The cleaning process is as follows: use cleaning solution-acetone-alcohol-deionized water to clean the sample step by step;

[0056] Step 2, N-type single crystal β-Ga after cleaning in step 1 2 o 3 Intrinsic single crystal β-Ga 2 o 3 Homoepitaxial layer growth, intrinsic single crystal β-Ga 2 o 3 During the growth of the homoepitaxial layer, chemical vapor deposition equipment is used to deposit metal gallium with a purity of 99.99999% as the gallium source, and argon as the carrier gas. The flow rate of the argon gas is controlled at 100 ml / min, and the reaction chamber is heated to 850°C. Introduce oxygen as the growth source gas, the oxygen flow rate is controlled at ...

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Abstract

The invention discloses an ultraviolet photodiode based on NiO / Ga2O3, comprising a top electrode and a bottom electrode, wherein A P-type crystal NiO film, an I-type crystal beta-Ga2O3 film, and an N-type single crystal beta-Ga2O3 substrate are sequentially disposed between the two electrodes from the top electrode to the bottom electrode. The invention also discloses a preparation method of an ultraviolet photodiode based on NiO / Ga2O3. The invention solves the problem that the Ga2O3-based pn junction ultraviolet photodiode cannot be prepared due to the lack of p-type Ga2O3 material in the prior art.

Description

technical field [0001] The invention belongs to the field of ultraviolet photoelectric detection application technology, in particular to a NiO / Ga-based 2 o 3 The ultraviolet photodiode of the present invention also relates to a kind of based on NiO / Ga 2 o 3 The fabrication method of the ultraviolet photodiode. Background technique [0002] When the solar-blind ultraviolet light with a wavelength of 200-280nm passes through the atmosphere, its photon target signal will react strongly with the ozone layer and be absorbed, so the ultraviolet light in this band is almost non-existent in the atmosphere. Based on the advantage of almost zero background signal of solar-blind ultraviolet light in the atmosphere, solar-blind ultraviolet detectors working in this band have the characteristics of low false alarm rate. Military fields such as tracking and shipboard communication have important application prospects. Gallium oxide, as a new type of semiconductor material with direc...

Claims

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Application Information

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IPC IPC(8): H01L31/0336H01L31/105H01L31/036H01L31/18
CPCH01L31/0336H01L31/036H01L31/105H01L31/18
Inventor 胡继超臧源李连碧蒲红斌
Owner XIAN UNIV OF TECH
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