CuAlO2/Ga2O3 ultraviolet photodiode and preparation method thereof

A diode and ultraviolet light technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to manufacture and lack of materials, etc., and achieve the effects of high critical breakdown electric field strength, excellent detection performance, and high withstand voltage level

Active Publication Date: 2019-01-04
XIAN RUNWEI MECHANICAL & ELECTRICAL EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this invention is to provide a kind of CuAlO 2 / Ga 2 o 3 The ultraviolet photodiode solves the problem of p-type Ga in the prior art 2 o 3 The lack of materials prevents the preparation of Ga 2 o 3 Problems with PIN-Based UV Photodiodes

Method used

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  • CuAlO2/Ga2O3 ultraviolet photodiode and preparation method thereof
  • CuAlO2/Ga2O3 ultraviolet photodiode and preparation method thereof

Examples

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Effect test

Embodiment 1

[0051] a CuAlO 2 / Ga 2 o 3 The preparation method of ultraviolet photodiode specifically implements according to the following steps:

[0052] Step 1. For N-type single crystal β-Ga 2 o 3 The substrate is cleaned, and after cleaning, it is dried with nitrogen gas for use. The cleaning process is: use cleaning solution ~ acetone ~ alcohol ~ deionized water to clean the sample step by step;

[0053] Step 2, N-type single crystal β-Ga after cleaning in step 1 2 o 3 Intrinsic single crystal β-Ga 2 o 3 Homoepitaxial layer growth, N-type single crystal β-Ga 2 o 3 Intrinsic single crystal β-Ga2 o 3 When the homoepitaxial layer is grown, the chemical vapor deposition equipment is used for the deposition, and the gallium metal with a purity of 99.99999% is used as the gallium source. The heating temperature of the gallium metal is 800°C, and argon is used as the carrier gas, and the flow rate of the argon gas is controlled at 200 ml / min. , heating the reaction chamber to 105...

Embodiment 2

[0063] a CuAlO 2 / Ga 2 o 3 The preparation method of ultraviolet photodiode specifically implements according to the following steps:

[0064] Step 1. For N-type single crystal β-Ga 2 o 3 The substrate is cleaned, and after cleaning, it is dried with nitrogen gas for use. The cleaning process is: use cleaning solution ~ acetone ~ alcohol ~ deionized water to clean the sample step by step;

[0065] Step 2, the N-type single crystal β-Ga after cleaning in the step 1 2 o 3 Intrinsic single crystal β-Ga 2 o 3 Homoepitaxial layer growth, N-type single crystal β-Ga 2 o 3 Intrinsic single crystal β-Ga 2 o 3 During the growth of the homoepitaxial layer, chemical vapor deposition equipment is used for deposition, and gallium metal with a purity of 99.99999% is used as the gallium source. The heating temperature of the gallium metal is 900°C, and argon is used as the carrier gas. The flow rate of the argon gas is controlled at 100 ml / min. Heat the reaction chamber to 900°C, ...

Embodiment 3

[0075] a CuAlO 2 / Ga 2 o 3 The preparation method of ultraviolet photodiode specifically implements according to the following steps:

[0076] Step 1. For N-type single crystal β-Ga 2 o 3 The substrate is cleaned, and after cleaning, it is dried with nitrogen gas for use. The cleaning process is: use cleaning solution ~ acetone ~ alcohol ~ deionized water to clean the sample step by step;

[0077] Step 2, the N-type single crystal β-Ga after cleaning in the step 1 2 o 3 Intrinsic single crystal β-Ga 2 o 3 Homoepitaxial layer growth, N-type single crystal β-Ga 2 o 3 Intrinsic single crystal β-Ga 2 o 3 When the homoepitaxial layer is grown, the chemical vapor deposition equipment is used for the deposition. The gallium metal with a purity of 99.99999% is used as the gallium source. The heating temperature of the gallium metal is 850°C, and the argon gas is used as the carrier gas, and the flow rate of the argon gas is controlled at 110 ml / min. , heating the reaction ...

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Abstract

The invention discloses a CuAlO2/Ga2O3 ultraviolet photodiode, comprising a top electrode and a bottom electrode, wherein a P-type crystal CuAlO2 film, an I-type beta-Ga2O3 film, and an N-type singlecrystal beta-Ga2O3 substrate are sequentially disposed between the two electrodes from the top electrode to the bottom electrode. The invention also discloses a preparation method of a CuAlO2/Ga2O3 ultraviolet photoelectric diode. The invention solves the problem that the Ga2O3-based PIN ultraviolet photoelectric diode cannot be prepared due to the shortage of p-type Ga2O3 material in the prior art.

Description

technical field [0001] The invention belongs to the field of ultraviolet photoelectric detection application technology, in particular to a CuAlO 2 / Ga 2 o 3 Ultraviolet photodiode, the present invention also relates to a kind of CuAlO 2 / Ga 2 o 3 Fabrication method of ultraviolet photodiode. Background technique [0002] Ultraviolet detection technology is one of the photoelectric detection technologies developed rapidly in recent years. The solar-blind ultraviolet light (wavelength 200-280nm) has the advantage of almost zero background signal in the atmosphere. The solar-blind ultraviolet detector working in this band has the characteristics of low false alarm rate. It has important application prospects in civilian fields and military fields such as missile identification and tracking and shipboard communication. Gallium oxide, as a new type of semiconductor material with direct bandgap and wide bandgap, has a bandgap of 4.9eV and a corresponding absorption wavelen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0336H01L31/18
CPCH01L31/0336H01L31/105H01L31/18
Inventor 胡继超臧源李连碧蒲红斌
Owner XIAN RUNWEI MECHANICAL & ELECTRICAL EQUIP
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