The invention discloses a field effect transistor, a preparation method and electronic equipment. The field effect transistor comprises a SiC substrate, a SiC epitaxial layer and a gate oxide structure which are sequentially arranged in a stacked mode, wherein the gate oxide structure comprises a transition layer, a barrier layer and an oxide layer which are sequentially stacked, the transition layer is arranged on the side, which is away from the SiC substrate, of the SiC epitaxial layer, the transition layer and the oxide layer are both made of SiO2, and the thickness of the transition layeris less than that of the oxide layer. Therefore, the interface between the gate oxide structure and the SiC epitaxial layer of the field effect transistor has a good interface state, so that the interface between the gate oxide structure and the SiC epitaxial layer has high mobility, the gate oxide structure has high reliability, and the field effect transistor is enabled to have good use performance.