A kind of preparation method of zinc oxide thin film transistor

A zinc oxide thin film and transistor technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of poor electrical stability, low on-state current, etc., achieve high on-state current, low cost, and simple preparation process Effect

CN108962759BActive Publication Date: 2019-07-30JILIN JIANZHU UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2019-07-30

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Abstract

The invention relates to a method for preparing a zinc oxide thin film transistor, and belongs to a method for preparing a thin film transistor. The method includes substrate cleaning, gate deposition, insulating layer deposition, oxygen-rich zinc oxide channel layer deposition, low-oxygen zinc oxide channel layer deposition, and source electrode and drain electrode deposition. The method has theadvantages that through preparation of the double active layer structure and the interdigital source and drain electrodes, the oxygen-rich and low-oxygen layered channel layers are prepared to improvethe stability of the device and the on-state current, the source and drain electrodes of the interdigitated shape are prepared thereon to further greatly increases the on-state current, and the preparation process is simple. The method is commonly used in the market for RF magnetron sputtering and electron beam evaporation, and does not need to replace the production line; the raw material is pure zinc oxide, the cost is low, and environmental protection is achieved. The method has application prospects in the fields of ultraviolet detection and display driving. The pure zinc oxide thin filmtransistor has more potential application in the market.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor device preparation, and in particular relates to a preparation method of a thin film transistor. Background technique

[0002] With the advent of the information age, the display field has entered the era of flat-panel display. As the core component of AMLCD and AMOLED, thin-film transistors have become an irreplaceable leading technology in the flat-panel display industry. The stability of thin-film transistors and various performance indicators The height of the display will directly limit the imaging capability of the display. Especially for large-size, high-resolution, high-frame-rate displays, such as three-dimensional displays, the requirements for the stability and driving force of thin-film transistors are more stringent, and the hydrogenated amorphous silicon thin-film transistors commonly used in the market can no longer meet the requirements. . In addition, since the driving mod...

Examples

Embodiment Construction

[0079] Include the following steps:

[0080] (1), clean the substrate 1, the substrate 1 adopts a hard substrate or a flexible substrate, and the substrate of this embodiment adopts glass; the specific steps are as follows:

[0081] (1) First put the substrate 1 into an acetone solution, and ultrasonically clean it at room temperature for 3 to 5 minutes to remove surface molecular contamination;

[0082] (2) Place the substrate 1 treated in step (1) in an ethanol solution, and ultrasonically clean it at room temperature for 3 to 5 minutes to remove residual acetone on the surface;

[0083] (3) Ultrasonic cleaning the substrate 1 treated in step (2) with deionized water at room temperature for 3 to 5 minutes to remove residual ethanol and ionic contamination;

[0084] (4) Dry the substrate 1 treated in step (3) with high-purity nitrogen, and put it in an oven for 5 minutes at 90°C, see figure 1 ;

[0085] (2) Deposition of the gate 2, the gate material is a metal or oxide co...