Ge channel device and forming method thereof

Abstract

The invention provides a strain Ge channel device. The strain Ge channel device comprises a silicon substrate, a Ge layer, a gate stack, a channel area, a drain electrode and a source electrode, wherein an oxide insulating layer is formed on the surface of the silicon substrate; the Ge layer is formed on the oxide insulating layer; a first thin passivated layer is formed between the Ge layer and the oxide insulating layer; the gate stack is formed on the Ge layer; the channel area is formed below the gate stack; the drain electrode and the source electrode are formed on the two sides of the channel area; and the drain electrode and the source electrode are SiGe1-xCx, so that tensile strain is generated in the channel area, and x is more than or equal to 0 and less than or equal to 1. The Ge channel device consisting of the SiGe1-xCx source electrode and drain electrode formed through the embodiment of the invention has a simple structure and is low in process difficulty and convenientto form. In addition, the tensile strain can be generated in the channel area of the Ge channel device through the SiGe1-xCx source electrode and drain electrode formed through the embodiment of the invention, and then the performance of the Ge channel device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a strained Ge channel device and a forming method thereof. Background technique [0002] For a long time, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been following the so-called Moore's law (Moore's law), and its working speed is getting faster and faster. However, for Si-based material itself As far as it is concerned, it is already close to the double limit of physics and technology. Therefore, various methods have been proposed in order to continuously improve the performance of MOSFET devices, and thus the development of MOSFET devices has entered a so-called post-Moore (More-Than-Moore) era. High-mobility channel engineering based on heterogeneous material structures, especially high-carrier mobility material systems such as Si-based Ge materials, is one of the effective technologies. For example, combini...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve at least one of the above-mentioned technical defects, especially the defect that the interface state between Ge and the oxide insulator in the current GeOI structure is very poor, and the defect that Ge channel devices are difficult to form

Images