High-electron-mobility transistor and memory chip
A high electron mobility, transistor technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of reverse leakage of devices, affecting the reliability of high electron mobility transistors, etc.
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Embodiment 1
[0032] Such as figure 1 As shown, the dielectric layer includes a first silicon nitride layer 41 and a high-K metal oxide layer 42 sequentially from bottom to top.
Embodiment 2
[0034] Such as figure 2 As shown, the dielectric layer includes a first silicon nitride layer 41 , a first silicon oxide layer and a high-K metal oxide layer 42 sequentially from bottom to top.
Embodiment 3
[0036] Such as image 3 As shown, the dielectric layer only includes the first silicon oxide layer, wherein the first silicon oxide layer is also a high-K compound, which can also ensure the withstand voltage characteristics of the high electron mobility transistor 100 and reduce manufacturing difficulty and film stress.
[0037] In the technical solution, preferably, the metal oxide layer 42 includes: at least one of a hafnium oxide layer, a zirconium oxide layer, a titanium oxide layer, an aluminum oxide layer and a thallium oxide layer.
[0038] In this technical solution, by setting the metal oxide layer 42 to include at least one of a hafnium oxide layer, a zirconium oxide layer, a titanium oxide layer, an aluminum oxide layer, and a thallium oxide layer, various implementations for improving the interface state are provided. Oxide has high capacitive properties and insulating properties.
[0039] In the technical solution, preferably, the inorganic oxide layer further i...
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