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High-electron-mobility transistor and memory chip

A high electron mobility, transistor technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of reverse leakage of devices, affecting the reliability of high electron mobility transistors, etc.

Inactive Publication Date: 2017-07-07
PEKING UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the use of GaN materials and non-doped intrinsic materials causes serious reverse leakage in the device due to its interface state, which seriously affects the reliability of high electron mobility transistors

Method used

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  • High-electron-mobility transistor and memory chip
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  • High-electron-mobility transistor and memory chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, the dielectric layer includes a first silicon nitride layer 41 and a high-K metal oxide layer 42 sequentially from bottom to top.

Embodiment 2

[0034] Such as figure 2 As shown, the dielectric layer includes a first silicon nitride layer 41 , a first silicon oxide layer and a high-K metal oxide layer 42 sequentially from bottom to top.

Embodiment 3

[0036] Such as image 3 As shown, the dielectric layer only includes the first silicon oxide layer, wherein the first silicon oxide layer is also a high-K compound, which can also ensure the withstand voltage characteristics of the high electron mobility transistor 100 and reduce manufacturing difficulty and film stress.

[0037] In the technical solution, preferably, the metal oxide layer 42 includes: at least one of a hafnium oxide layer, a zirconium oxide layer, a titanium oxide layer, an aluminum oxide layer and a thallium oxide layer.

[0038] In this technical solution, by setting the metal oxide layer 42 to include at least one of a hafnium oxide layer, a zirconium oxide layer, a titanium oxide layer, an aluminum oxide layer, and a thallium oxide layer, various implementations for improving the interface state are provided. Oxide has high capacitive properties and insulating properties.

[0039] In the technical solution, preferably, the inorganic oxide layer further i...

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PUM

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Abstract

The invention provides a high-electron-mobility transistor and a memory chip. The high-electron-mobility transistor comprises a substrate, a gallium nitride layer, a gallium nitride aluminum layer, a dielectric layer and an electrode, wherein one side of the gallium nitride layer is compounded on a surface layer of the substrate and the other side of the gallium nitride layer is compounded on a bottom portion of the gallium nitride aluminum layer; the dielectric layer is compounded on a top layer of the gallium nitride aluminum layer, and the dielectric layer is provided with at least two cut-through contact holes; the electrode includes a drain electrode, a gate electrode and a source electrode, and the drain electrode and the source electrode are arranged in the corresponding contact holes of the at least two corresponding cut-through contact holes; and the dielectric layer includes a metal oxide layer and / or an inorganic oxide layer. In the technical scheme, an interface state of the high-electron-mobility transistor is improved, a reverse direction leakage current of the transistor is effectively reduced and simultaneously reliability of the transistor is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high electron mobility transistor and a memory chip. Background technique [0002] In related technologies, with the development of semiconductor manufacturing technology, power devices with low power consumption and high-speed high-pass characteristics have become the mainstream research direction. [0003] GaN (Gallium Nitride) is the third generation wide bandgap semiconductor material with large bandgap (3.4eV), high electron saturation rate (2e7cm / s), high breakdown electric field (1e10--3e10V / cm), relatively It has high thermal conductivity, corrosion resistance and radiation resistance, and has strong advantages in high pressure, high frequency, high temperature, high power and radiation resistance environmental conditions, so it is considered to be a research tool for short-wave optoelectronic devices and high-voltage, high-frequency and large Optimal material f...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/06
CPCH01L29/778H01L29/0684
Inventor 刘美华陈建国林信南
Owner PEKING UNIV
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