Fin-type field-effect tube and forming method therefor

Abstract

The invention discloses a fin-type field-effect tube and a forming method therefor. The method comprises the steps: providing a substrate with a plurality of split fin parts, wherein the substrate comprises an NMOS region; forming a pseudo-gate structure which stretches across the fin parts and covers the top surfaces and side wall surfaces of a part of fin parts, and comprises a gate oxidation layer and a pseudo-gate electrode layer located on the gate oxidation layer; carrying out the etching of a part of fin parts at two sides of the pseudo-gate structure in the NMOS region by certain thickness, forming NMOS region grooves in the fin parts of the NMOS region, wherein the profile of each NMOS region groove in a direction perpendicular to the extending direction of the fin parts is shapedlike U; and forming an in-situ doped epitaxial layer with N-type doped atoms in the NMOS region grooves. According to the invention, the NMOS region grooves are formed in the fin parts at two sides of the pseudo-gate structure in the NMOS region, and the profile of each NMOS region groove in the direction perpendicular to the extending direction of the fin parts is shaped like U. The surfaces ofthe fin parts exposed by the NMOS region grooves are in <100> crystal orientation, and the in-situ doped epitaxial layer grows in the <100> crystal orientation, so the dislocation of the in-situ dopedepitaxial layer is smaller.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] In semiconductor manufacturing, with the development trend of VLSI, the feature size of integrated circuits continues to decrease. In order to accommodate the reduction in feature size, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of the feature size, the semiconductor process g...

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Problems solved by technology

[0004] However, the electrical performance of the fin field effect transistor formed by the prior art needs to be improved

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