Method for forming semiconductor device

Abstract

A method for forming a semiconductor device comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate is internally provided with isolation structures, and the surface of the semiconductor substrate is provided with gate structures arranged between adjacent isolation structures; stably doping the isolation structures to enhance the corrosion resistance of the isolation structures; forming grooves in the semiconductor substrate at the two sides of each gate structure; cleaning the grooves after doping the isolation structures; and forming a stress layer filling the grooves. The stability of the isolation structures is increased, the anti-etching ability of the isolation structure material is improved, the situation in which the isolation structures are etched by a semiconductor device fabrication process is avoided, the reliability of the isolation structures is improved, the reliability of semiconductor devices is improved, the occurrence of breakdown or leakage is avoided, and the electrical performance of semiconductor devices is optimized.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of semiconductor devices and improve the performance of devices. [0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become more and more common means to improve the performance of semiconductor devices through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance of semiconductor devices. ...

AI Technical Summary

Problems solved by technology

[0005] The introduction of embedded silicon germanium technology and embedded carbon silicon technology can improve the carrier mobility of semiconductor devices, but in practical applications, it is found that the carrier mobility of semiconductor devices has been improved, but the reliability of the isolation structure of semiconductor devices Poor performance, semiconductor devices are prone to breakdown or leakage

Images