Silicon carbide (SiC) metal oxide semiconductor (MOS) capacitor with composite dielectric layer and manufacturing method for SiC MOS capacitor with composite dielectric layer
A composite medium and manufacturing method technology, applied in the field of microelectronics, can solve the problems of not improving the reliability of the oxide layer, reducing the interface state density of the device, and the lattice damage of the oxide layer interface, so as to increase the maximum critical electric field and reduce the interface state density , Improve the effect of pressure resistance
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[0030] Example 1
[0031] Step 1, growing an N-type SiC epitaxial layer.
[0032] The thickness is 380μm, and the doping concentration is 5×10 18 cm -3 The N-type SiC substrate material is placed in a SiC epitaxial growth furnace, the growth temperature is 1570 ℃, the thickness of the growth layer is 10 μm, and the doping concentration is 5×10 15 cm - 3 N-type SiC epitaxial wafer.
[0033] Step 2, pretreating the grown N-type SiC epitaxial wafer.
[0034] 2.1) Ultrasonic cleaning of N-type SiC epitaxial wafers with deionized water;
[0035] 2.2) Clean the SiC epitaxial wafer with 80% sulfuric acid, cook for 10 minutes, and soak for 30 minutes;
[0036] 2.3) Clean the SiC epitaxial wafer several times with deionized water;
[0037] 2.4) Use a ratio of 5:1:1 H 2 O, H 2 O 2 Soak the SiC epitaxial wafer in the mixed solution at a temperature of 80°C for 5 minutes, rinse with hydrofluoric acid solution, rinse with deionized water several times, and finally dry with an infrared lamp.
[0038] St...
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[0050] Example 2
[0051] Step one is to grow an N-type SiC epitaxial layer.
[0052] The thickness is 380μm, and the doping concentration is 5×10 18 cm -3 The N-type SiC substrate material is placed in a SiC epitaxial growth furnace, the growth temperature is 1570 ℃, the growth layer thickness is 50 μm, and the doping concentration is 2×10 15 cm -3 N-type SiC epitaxial wafer.
[0053] Step two: pretreating the grown N-type SiC epitaxial wafer.
[0054] First, ultrasonically clean the N-type SiC epitaxial wafer with deionized water;
[0055] Next, clean the SiC epitaxial wafer with 80% sulfuric acid, boil it for 10 minutes, and soak it for 30 minutes;
[0056] Next, clean the SiC epitaxial wafer several times with deionized water;
[0057] Then, use a ratio of 5:1:1 H 2 O, H 2 O 2 And hydrochloric acid, soak the SiC epitaxial wafer in the mixed solution at a temperature of 80°C for 5 minutes, wash with a hydrofluoric acid solution, then wash with deionized water several times, and finally...
Example Embodiment
[0070] Example 3
[0071] Step A, N-type SiC epitaxial layer is grown.
[0072] The thickness is 380μm and the doping concentration is 5×10 18 cm -3 The N-type SiC substrate is placed in a SiC epitaxial furnace, the growth temperature is 1600℃, the thickness of the growth layer is 100μm, and the doping concentration is 1×10 15 cm -3 N-type SiC epitaxial layer.
[0073] Step B, pretreatment of the grown N-type SiC epitaxial wafer.
[0074] B1) Ultrasonic cleaning of N-type SiC epitaxial wafer with deionized water;
[0075] B2) Clean the SiC epitaxial wafer with 80% sulfuric acid, cook for 10 minutes, and soak for 30 minutes;
[0076] B3) Clean the SiC epitaxial wafer several times with deionized water;
[0077] B4) H with a ratio of 5:1:1 2 O, H 2 O 2 The SiC epitaxial wafer is immersed in the mixed solution with a temperature of 80°C for 5 minutes, washed with a hydrofluoric acid solution, washed with deionized water several times, and finally dried with an infrared lamp.
[0078] Step C, ...
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