Sulfur halogen glass and its production for superfast light switch

A technology of sulfur halide glass and optical switch, applied in the field of nonlinear optical glass materials, can solve the problem of large nonlinear absorption in the communication band, achieve good thermal stability, good glass forming ability, and not easy to devitrify

Inactive Publication Date: 2008-03-19
WUHAN UNIV OF TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] US Patent US 20030012491 introduces an optical amplifier utilizing the stimulated Raman effect of a highly nonlinear chalcogenide glass fiber, but the chalcogenide glass involved in this method does not contain alkali metal halides, and there is a large nonlinearity in the communication band absorb

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sulfur halogen glass and its production for superfast light switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 8

[0038] Halogen glass for ultrafast optical switches, which is mainly composed of In 2 S 3 , MX, As 2 S 3 and GeS 2 Prepared from raw materials, the mol% of each raw material is: In 2 S 3 : 22, MX: 30, As 2 S 3 : 8, GeS 2 : 40; wherein, MX is CsCl and CsBr, CsCl is 15, and CsBr is 15.

[0039] The specific preparation method is the same as in Examples 1-7.

Embodiment 9

[0041] Halogen glass for ultrafast optical switches, which is mainly composed of In 2 S 3 , MX, As 2 S 3 and GeS 2 Prepared from raw materials, the mol% of each raw material is: In 2 S 3 : 22, MX: 30, As 2 S 3 : 8, GeS 2 : 40; wherein, MX is CsCl, CsBr and CsI, CsCl is 10, CsBr is 10, and CsI is 10.

[0042] The specific preparation method is the same as in Examples 1-7.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to view more

Abstract

A sulfur halogen glass for ultra-fast photo-switch and its production are disclosed. The sulfur halogen glass consists of In2S3 20í½35mol, MX 25í½40mol, As2S3 4í½10mol and GeS2 20-50mol. MX is mixture of any one kind or two kinds and above. It has better quality and glass forming ability, less consumption and larger linear optical refractive index.

Description

technical field [0001] The invention belongs to the technical field of nonlinear optical glass materials, and relates to optical communication materials, in particular to an inorganic glass that produces sub-picosecond ultrafast optical response under the action of laser and has a large third-order nonlinear optical coefficient, and the corresponding glass preparation method. Background technique [0002] Nonlinear optical glass materials will produce special optical nonlinear response under the action of laser. Using NOLM nonlinear optical loop mirror and Mach-Zehnder interference method, the refractive index of the material is changed under the action of strong laser, so that the signal light The phase changes, and the purpose of switching and switching the optical signal is achieved by using the interference effect, and the function of the all-optical switch is realized. At the same time, by using the stimulated Raman scattering (SRS) effect of nonlinear optical glass ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C03C3/32
Inventor 陶海征赵修建肖海燕林常规董国平毛舜
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap