Preparation method of POSS-modified CdTe quantum dot-sensitized solar cell

A technology for sensitization of solar cells and quantum dots, applied in the field of solar cells, can solve the problems of no solar cell photosensitizer, less surface modifier of quantum dots, etc., so as to improve photocurrent and photoelectric conversion efficiency, increase injection efficiency and collection efficiency. Efficiency, the effect of increasing stability

Inactive Publication Date: 2017-03-08
HEBEI UNIV OF TECH
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Problems solved by technology

At present, POSS, as a high-performance surface modifier, has been used to improve the stability of graphene nanosheets, Au (POSS-Au composite nanoparticles) and Pd nanoparticles, but as a surface modifier for quantum dots Research is still relatively small
There is no literature report on its use as a photosensitizer for solar cells

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  • Preparation method of POSS-modified CdTe quantum dot-sensitized solar cell
  • Preparation method of POSS-modified CdTe quantum dot-sensitized solar cell
  • Preparation method of POSS-modified CdTe quantum dot-sensitized solar cell

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preparation example Construction

[0020] The invention provides a kind of preparation method of POSS modified CdTe quantum dot sensitized solar cell, it is characterized in that comprising the following steps:

[0021] (1) Preparation of CdTe quantum dots: Prepare CdTe quantum dots by condensing and refluxing the water phase method; dissolve NAC (N-acetyl-L-cysteine) in water, stir at room temperature until uniformly mixed; then add CdCl 2 solution, to obtain a Cd-containing 2+ precursor solution; after vigorous stirring, excess KBH was added 4 , followed by immediate dropwise addition of Na 2 TeO 3 Aqueous solution, stirred at room temperature until a transparent and uniform solution; then adjusted the pH of the solution to 9-11.5 with NaOH solution; then heated at 90-100°C to prepare CdTe quantum dots with different particle sizes, wherein the molar ratio of NAC / Cd 2+ / Te 2- =1.2:1:0.2; after purification, CdTe quantum dot powder is obtained;

[0022] (2) POSS modified CdTe quantum dots: use OA-POSS t...

Embodiment 1

[0026] (1) Preparation of CdTe quantum dots: Prepare CdTe quantum dots by condensing and refluxing the water phase method; dissolve NAC in water, stir at room temperature until uniformly mixed; then add CdCl 2 solution, to obtain a Cd-containing 2+ precursor solution; after vigorous stirring, excess KBH was added 4 , then add Na 2 TeO 3 Aqueous solution, stirred at room temperature until a transparent and uniform solution; then adjusted the pH value of the solution to 11; then heated at 100°C to prepare CdTe quantum dots with different particle sizes, wherein the molar ratio NAC / Cd 2+ / Te 2- =1.2:1:0.2; after purification, CdTe quantum dot powder is obtained;

[0027] (2) POSS modified CdTe quantum dots: use OA-POSS to modify CdTe quantum dots; dissolving the CdTe quantum dot powder obtained in step 1) into water to form a CdTe quantum dot solution, adding the coupling agent EDC to the CdTe quantum dot solution and stirring 30min, wherein the molar ratio CdTe:EDC=1:500; a...

Embodiment 2

[0038] (1) Preparation of CdTe quantum dots: Prepare CdTe quantum dots by condensing and refluxing the water phase method; dissolve NAC in water, stir at room temperature until uniformly mixed; then add CdCl 2 solution, to obtain a Cd-containing 2+ precursor solution; after vigorous stirring, excess KBH was added 4 , then add Na 2 TeO 3 Aqueous solution, stirred at room temperature until a transparent and uniform solution; then adjust the pH value of the solution to 10; then heated at 100 ° C to prepare CdTe quantum dots with different particle sizes, wherein the molar ratio NAC / Cd 2+ / Te 2- =1.2:1:0.2; after purification, CdTe quantum dot powder is obtained;

[0039] (2) POSS modified CdTe quantum dots: use OA-POSS to modify CdTe quantum dots; dissolving the CdTe quantum dot powder obtained in step 1) into water to form a CdTe quantum dot solution, adding the coupling agent EDC to the CdTe quantum dot solution and stirring 40min, wherein the molar ratio CdTe:EDC=1:200; t...

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Abstract

The invention discloses a preparation method of a POSS-modified CdTe quantum dot-sensitized solar cell. The method comprises the steps of carrying out reflux condensation by adopting a water phase method to prepare CdTe quantum dot powder; and then modifying POSS to the surfaces of CdTe quantum dots and assembling POSS-modified CdTe quantum dots into the quantum dot-sensitized solar cell as a photosensitizer. The method is a simple and feasible preparation method of the OA-POSS-modified CdTe quantum dot-sensitized solar cell. The problems of poor quantum dot stability and severe combination of electron holes between a photo-anode and a quantum dot interface are solved. OA-POSS is modified on the surfaces of the CdTe quantum dots, so that the photoelectric characteristics of the CdTe quantum dots can be changed, the quantum dots can be effectively passivated, the defects of the surfaces of the quantum dots are reduced, the stability of the quantum dots is improved and electrons are more effectively injected into TiO2, thereby improving the photoelectric conversion efficiency and the stability of the quantum dot-sensitized solar cell.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a preparation method of POSS modified CdTe quantum dot sensitized solar cells. Background technique [0002] Solar energy has the characteristics of inexhaustible, green and clean, and it is an ideal new green energy to solve the energy and environmental problems faced by human beings. In the utilization of solar energy, solar cells have attracted much attention due to their advantages of safety, reliability, noiselessness, pollution-free, and energy available everywhere. Quantum dot sensitized solar cells are the third generation of new solar cells, known as the most potential solar cells for their theoretical conversion efficiency up to 66%. At the same time, quantum dot sensitized solar cells have unique multiple And the advantages of simple manufacturing process. Among them, quantum dots have many unique advantages as light harvesting agents. The particle size of quantum dots can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042H01L51/42H01L51/44H01L51/46H01L51/48
CPCH01G9/20H01G9/2054H10K30/00H10K30/81Y02E10/549Y02E10/542
Inventor 范永哲杨华东赵雪马瑞娜杜安曹晓明
Owner HEBEI UNIV OF TECH
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