57 results about "Electron hole recombination" patented technology

The invention discloses a novel photocatalyst for producing hydrogen from organic matter wastewater and a preparation method of the novel photocatalyst, and relates to the technical field of photocatalysis. The photocatalyst disclosed by the invention is combined with oxidation-reduction capability, and can effectively degrade and produce hydrogen under the irradiation of sunlight. Through combination of quaternized porous tungsten oxide and vanadate radicals, silver vanadate load growth is promoted, the sunlight utilization rate is increased, and the electron-hole recombination rate is reduced. Reduced graphene oxide is used for pretreatment, active groups are introduced, the reduced graphene oxide is compounded with tungsten oxide / silver vanadate, the binding force is enhanced through heat treatment, photo-induced electron-hole pair compounding is inhibited through the conductivity, and the visible light catalytic performance is improved. The adsorption effect of porous tungsten trioxide and reduced graphene oxide can accelerate the degradation of organic matters. By optimizing the proportion of silver vanadate, tungsten oxide and reduced graphene oxide, the visible light response and charge separation efficiency are enhanced, the degradation and hydrogen production performance is improved, and light corrosion is reduced.

The embodiment of the invention provides an LED chip and a manufacturing method thereof, the LED chip comprises a substrate, a first reflecting layer, a first electrode, an epitaxial structure layer, a second reflecting layer and a second electrode, and the first reflecting layer is provided with a first type of ohmic contact; the epitaxial structure layer is provided with an inclined side wall; the second electrode is provided with a first hollow area, and the first hollow area can be used for enabling light rays of the LED chip to be emitted only from the first hollow area, so that small-angle light emitting of the LED chip is achieved. The orthographic projection of the first type of ohmic contact on the surface where the second electrode is located is located in the first hollowed-out area, so that the electron-hole recombination area is located in the first hollowed-out area. The position of the first type ohmic contact is controlled and the first type ohmic contact is arranged in the first hollow area, so that the position of the electron hole recombination area is controlled, the electron hole recombination area and the first hollow area for emitting light are overlapped, the effective emission light power of the light emitted from the first hollow area is improved, and the high power of the LED chip is further realized.

The invention relates to the technical field of photocatalysis, in particular to photocatalytic hydrogel based on zinc oxide-chitosan as well as a preparation method and application of the photocatalytic hydrogel. The photocatalytic hydrogel takes chitosan gel as a substrate and is loaded with ZnO nanoparticles. Zn ions in the photocatalytic hydrogel are coordinated with-NH2 groups in the chitosan, and ZnO can be anchored in a chitosan gel framework. Meanwhile, based on the anchoring effect of-NH2 groups on Zn ions, ZnO particles are subjected to surface passivation protection, and then uniform and small-size nano particles grow. Compared with ZnO obtained by a common hydrothermal method, the photocatalytic hydrogel has higher photocatalytic efficiency. As a porous polymer, the chitosan gel has excellent adsorption performance; the-NH2 group in the chitosan performs passivation protection on the surface of the ZnO particles, so that electron-hole recombination can be reduced, and the photocatalytic performance is further improved; and uniform and small-sized ZnO nanoparticles have larger surface area, so that the photocatalytic performance is improved.

The gallium nitride-based semiconductor laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer in sequence from bottom to top, the lower waveguide layer is a limited light field lower waveguide layer, the upper waveguide layer is a limited light field upper waveguide layer, and the electron blocking layer is an electron blocking layer. The limited light field lower waveguide layer comprises a first limited light field lower waveguide layer and a second limited light field lower waveguide layer; the limited light field upper waveguide layer comprises a first limited light field upper waveguide layer and a second limited light field upper waveguide layer. The limiting effect of heterojunction barriers of the upper waveguide layer and the lower waveguide layer of the laser on carriers is regulated and controlled, carrier transportation and distribution are controlled, highly degenerate electron-hole composite stimulated radiation is limited in the direction deviating to the lower waveguide layer, light field dissipation and permeation are reduced, the carriers and photons are effectively limited in the active layer, and the efficiency of the laser is improved. And the light field limiting factor of the laser is improved.

The invention discloses a preparation method of a pyrenyl covalent organic framework material and application of the pyrenyl covalent organic framework material in photocatalytic hydrogen production reaction, and belongs to the field of heterogeneous catalysis. The novel pyrenyl COFs photocatalyst is synthesized by regulating and controlling the quantity of triphenylamine and integrating triphenylamine monomers with different contents into a pyrenyl covalent organic framework (COF) skeleton. The preparation method is simple to operate, mild in reaction condition, short in reaction time and high in repeatability, the obtained pyrenyl COFs have good light capture capacity and photon-generated carrier separation characteristic, electron-hole recombination can be effectively reduced, the excited state service life is prolonged, the reaction efficiency of photocatalytic hydrogen production is improved, and potential application prospects are achieved.

The present invention discloses a method for preparing a biomimetic photosynthetic membrane and a light-enhanced ion pump effect, belonging to the technical field of biomimetic photosynthetic membranes. The present invention uses a solution immersion method to immerse pyrrole monomers into the pores of a MOF porous material; a chemical oxidation method is used to oxidize the pyrrole monomers to a polypyrrole conductive polymer PPy, thereby constructing a PPy / MOF heterogeneous membrane composite of PPy and a MOF porous material; subsequently, a TiO2 nanolayer is modified on the surface of the PPy / MOF heterogeneous membrane by a spin coating method to construct a PPy / MOF / TiO2 heterogeneous membrane, i.e., a biomimetic photosynthetic membrane. The present invention compounds different light-responsive molecules to promote the transfer of photogenerated electrons, inhibit electron-hole recombination, and achieve the light-enhanced ion pump effect of the biomimetic photosynthetic membrane. The PPy / MIL-101(Cr) / TiO2 heterogeneous membrane of the present invention can be used to manufacture optical components, systems or instruments due to its excellent light response performance, high electron-hole separation efficiency and photoelectric conversion efficiency, and strong ion pump effect.

The invention discloses an anti-radiation reinforced IGBT (Insulated Gate Bipolar Translator) structure and a preparation method thereof, and relates to the technical field of power semiconductor devices. The IGBT structure comprises a collector electrode, a semiconductor layer, a trench gate and an emitter electrode, a P-type collector region of the semiconductor layer is provided with a plurality of deep doped regions, the deep doped regions are embedded into an N-type buffer region in the direction perpendicular to the interface of the N-type buffer region and extend into an N-type drift region, and the doping concentration of the deep doped regions is higher than that of other regions of the P-type collector region. According to the invention, the electron-hole recombination efficiency of the bottom region of the N-type drift region is enhanced through the arrangement of the deep doping region, and the number of deposited charges in the region is reduced, so that the radiation resistance of the IGBT device can be effectively improved, and the IGBT device is suitable for high-voltage direct-current power transmission requirements in high-altitude regions.

The present invention discloses a semiconductor laser comprising: a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in order from bottom to top; the active layer comprising a well layer and a barrier layer; the electron effective mass of the well layer of the active layer being smaller than the electron effective mass of the barrier layer, the spontaneous polarization coefficient of the well layer of the active layer being smaller than the spontaneous polarization coefficient of the barrier layer, and the bandgap width of the well layer of the active layer being smaller than the bandgap width of the barrier layer. The present invention can suppress InN phase separation, segregation, and composition fluctuation in high-In content semiconductor lasers, effectively improve the crystal quality and interface quality of the active layer, effectively enhance the electron-hole recombination efficiency of the active layer, and effectively reduce defects and non-radiative recombination centers, thereby effectively improving the slope efficiency of green lasers.

The application provides a LED chip with reverse polarity and small hole light emission and a manufacturing method thereof. The epitaxial layer of the LED chip comprises a P-type window layer and an MQW light emitting layer. The doping concentration of a first region in the P-type window layer is greater than that of a second region, which can limit current expansion and improve light emitting efficiency. An ODR dielectric film layer and an ODR metal reflection layer form an ODR mirror at the bottom of the epitaxial layer. An insulating passivation layer and an N electrode on the sidewall of the epitaxial layer can form an ODR mirror on the sidewall of the epitaxial layer. The N electrode also has a first hollow region. The ODR mirror can be used to reflect light, so that the light emitted by the MQW light emitting layer is only emitted from the first hollow region, and stray light emitted by the sidewall is suppressed. In addition, the orthographic projection of the first hollow region in the first direction completely covers the P ohmic contact metal unit, so that the electron hole recombination region is located in the MQW light emitting layer under the orthographic projection of the first hollow region, and the light emitting efficiency is further improved.

The application discloses a Bi2Sn2O7-Mo2C-In2S3 heterojunction photocatalyst and a preparation method thereof. First, a Bi2Sn2O7-Mo2C intermediate is prepared by using a Bi2Sn2O7 precursor; then, In2S3 is in-situ grown on the intermediate to obtain Bi2Sn2O7-Mo2C-In2S3. Mo2C is used to connect Bi2Sn2O7 and In2S3, and O-C-Mo-S chemical bonds are formed between Mo2C and the two, thereby constructing a heterostructure with a close interface contact; the chemical bonds serve as an electron transmission bridge to accelerate the migration of photo-generated carriers, and the local photo-thermal effect of Mo2C under visible light / near-infrared light irradiation further promotes the interface transmission of the carriers. The synergistic effect of the above-mentioned double effects significantly inhibits the electron-hole recombination, greatly improves the photo quantum efficiency and the photocatalytic activity, and makes the catalyst have a wide application prospect in the field of photocatalysis such as energy conversion and environmental governance.

The present application relates to a kind of 1D / 2D double heterojunction catalyst and its preparation method and its application in photo-assisted high iodate activation degradation bisphenol A.The preparation method of the present application: concentrated hydrochloric acid solution and LiF are mixed, Ti3AlC2 is added, heated reaction, solid-liquid separation is taken solid phase, after washing to neutral, dispersed in ethanol, to obtain MXene ethanol solution;Cerium source aqueous solution is added to MXene ethanol solution and mixed in liquid nitrogen, to obtain mixed solution;Organic ligand, ethanol and pure water are mixed to obtain mixed solution, the mixed solution and mixed solution are mixed and heated, solid-liquid separation is taken precipitate, freeze-drying is obtained powder;The obtained powder is heated and calcined under inert atmosphere, to obtain 1D / 2D double heterojunction catalyst.The present application effectively inhibits photo-generated electron hole recombination by constructing double heterojunction, while realizing ultrafast electron transfer, to enhance oxidation, realizes the high-efficiency photocatalytic activity of "1+1>2".

The disclosure relates to a semiconductor light emitting device from which a growth substrate is removed, comprising: a semiconductor light emitting diode including a first semiconductor layer having a first conductivity, an active layer for generating light by electron-hole recombination, and a second semiconductor layer having a second conductivity different from the first conductivity, in which the first semiconductor layer is formed in a direction where the growth substrate is removed; a metal layer formed on the second semiconductor layer; and an insulating layer for covering lateral faces of the semiconductor light emitting diode and lateral faces of the metal layer, and a manufacturing method for such a semiconductor light emitting device.

The invention provides a preparation method of a defect engineering regulation ultrathin LDH confinement ruthenium monatomic catalyst and application of the defect engineering regulation ultrathin LDH confinement ruthenium monatomic catalyst to photocatalytic CO2 reduction, and relates to the technical field of catalyst preparation, the catalyst adopts ultrathin cobalt-aluminum layered double hydroxide (CoAl-LDH) rich in metal vacancies as a carrier, Ru monatomic is anchored at the metal vacancies through a wet impregnation process, and the catalyst is prepared through a hydrothermal method. Ru atoms and a surrounding matrix form an unsaturated coordination environment, so that adsorption and activation of CO2 are effectively enhanced; meanwhile, highly dispersed Ru active sites not only provide abundant catalytic centers, but also regulate and control the distribution of photo-generated charges on the surface of the catalyst, promote the separation and migration of charges, and significantly inhibit electron-hole recombination. Through the mode, the invention provides a construction strategy of a monatomic catalytic material, and a brand new technical path is provided for efficient CO2 photoreduction reaction.

The invention belongs to the technical field of photocatalytic materials, and particularly relates to a semiconductor-biochar composite material and a preparation method and application thereof. The invention provides a semiconductor-biochar composite material. The semiconductor-biochar composite material comprises biochar, a semiconductor material and silanized white carbon black, wherein the semiconductor material and the silanized white carbon black are loaded on the surface of the biochar; the semiconductor material comprises TiO2 and ZnO; and the TiO2 and the ZnO form a heterojunction. The semiconductor-biochar composite material combines the advantages of photocatalytic performance and good conductivity, the built-in electric field of the heterojunction separates charges, the biochar rapidly exports electrons, and the built-in electric field and the biochar cooperate to reduce the electron-hole recombination rate. According to the semiconductor-biochar composite material, photocatalytic activity and electron transmission efficiency are maximized through the synergistic effect of heterojunction charge separation and a biochar conductive network.

The invention discloses a light emitting diode and a light emitting device, in the light emitting diode, an electron blocking layer is formed between a second semiconductor layer and an active layer, an insertion layer is formed between the electron blocking layer and the active layer, the insertion layer comprises a first layer structure, a second layer structure and a third layer structure which are stacked in sequence, the first layer structure and the third layer structure are AlN layers, and the second layer structure is an AlGaN layer or a GaN layer. According to the insertion layer, the AlGaN layer or the GaN layer is formed between the two AlN layers, meanwhile, the Al content in the AlGaN layer is controlled to be lower than 10%, due to the fact that the AlGaN layer or the GaN layer with the low Al content is narrow in energy gap, and AlN has a very wide energy gap, obvious energy gap difference is formed between the material layers of the insertion layer, the energy gap difference can form a tunneling effect, the hole injection energy level is reduced, and the hole injection efficiency is improved. Therefore, the electron hole recombination efficiency of the active layer is improved, and the light emitting effect of the light emitting diode is improved.

The invention discloses a light emitting diode, a driving method thereof and a display panel, and relates to the technical field of display. The light emitting diode comprises a substrate, a first semiconductor layer, an electron hole recombination layer, a first current diffusion layer, a first electrode, a second semiconductor layer, a second current diffusion layer and a second electrode, wherein the first semiconductor layer is arranged on the substrate; the electron hole composite layer is arranged on the first semiconductor layer; the first current diffusion layer is arranged on the first semiconductor layer; the first electrode is arranged on the first current diffusion layer; the second semiconductor layer is arranged on the electron hole composite layer; the second current diffusion layers are arranged on the second semiconductor layer, the number of the second current diffusion layers is multiple, and the multiple second current diffusion layers are arranged at intervals; the second electrode is arranged on the second current diffusion layer; wherein the number of the second electrodes is the same as that of the second current diffusion layers; according to the light-emitting diode, the plurality of second electrodes are arranged, so that stable output of relatively low current and relatively high current is realized.

This invention relates to a composite photocatalytic material with optimized electron transport pathways, its preparation method, and its applications. The purpose of this invention is to address the problems of high electron-hole recombination rates and difficulty in efficiently removing recalcitrant organic matter from water using existing photocatalytic technologies. The composite photocatalytic material with optimized electron transport pathways includes an active component and an electron-accepting platform coupled thereto, forming a stable interfacial contact structure between the active component and the electron-accepting platform. The active component is bismuth oxyiodide; the electron-accepting platform is Magnéli phase titanium suboxide. The composite photocatalytic material prepared by this invention can achieve highly efficient photocatalytic oxidation removal of organic pollutants without the addition of external chemical reagents, and is particularly suitable for the treatment of antibiotics, pharmaceuticals, and other recalcitrant organic matter. This invention enhances the oxidation process by constructing an electron-accepting platform, offering advantages such as environmental friendliness, high carrier utilization efficiency, and wide applicability.

The embodiment of the utility model provides an LED chip, which comprises a substrate, a first reflecting layer, a first electrode, an epitaxial structure layer, a second reflecting layer and a second electrode, and is characterized in that a first type of ohmic contact is arranged in the first reflecting layer; the epitaxial structure layer is provided with an inclined side wall; the second electrode is provided with a first hollow area, and the first hollow area can be used for enabling light rays of the LED chip to be emitted only from the first hollow area, so that small-angle light emitting of the LED chip is achieved. The orthographic projection of the first type of ohmic contact on the surface where the second electrode is located is located in the first hollowed-out area, so that the electron-hole recombination area is located in the first hollowed-out area. The position of the first type ohmic contact is controlled and the first type ohmic contact is arranged in the first hollow area, so that the position of the electron hole recombination area is controlled, the electron hole recombination area and the first hollow area for emitting light are overlapped, the effective emission light power of the light emitted from the first hollow area is improved, and the high power of the LED chip is further realized.

The invention discloses a preparation method of an AgBiS2 / perovskite Janus nanocrystal heterostructure and a preparation method of the AgBiS2 / perovskite Janus nanocrystal heterostructure. Comprising the following steps: S1, preparing a precursor solution A; s2, preparing a precursor solution B; s3, synthesizing a perovskite seed crystal; s4, preparing a precursor solution C, and adding a perovskite seed crystal into the precursor solution C to obtain a precursor solution D; s5, preparing a precursor solution E; and S6, adding the precursor solution E into the precursor solution D to obtain the AgBiS2 / perovskite Janus nanocrystalline heterostructure. Compared with traditional monodisperse AgBiS2 and perovskite quantum dots, the monodisperse AgBiS2 / perovskite quantum dot composite material has significant advantages, combines respective spectral characteristics of AgBiS2 and perovskite quantum dots, successfully expands a spectrum from visible light to a near-infrared region, and greatly improves the utilization rate of the spectrum. The introduction of AgBiS2 not only reduces the harm of heavy metals of perovskite, but also greatly enhances the stability of the overall structure, and the heterojunction can effectively promote the separation and transmission of photon-generated carriers, reduce the electron-hole recombination probability, and significantly improve the efficiency of photoelectric devices.

A doped (ultra-)wide bandgap ((U)WBG) semiconductor can demonstrate photoconductivity when illuminated with sub-bandgap light. Forming a rectifying semiconductor-metal junction on a suitably doped (U)WBG semiconductor enables a photoconductive semiconductor switch (PCSS) actuated by visible light with strong photoresponsivity and fast operation. A PCSS realized in Ge-doped AlN achieves an on / off ratio over one million, and a photoresponsivity of 2.8 A / W under sub-bandgap illumination at center wavelength 455 nm and power density as low as 1 mW / cm2. The PCSS can be turned off in under a second with a bias pulse that accelerates electron-hole recombination in the rectifying junction, quenching persistent photoconductivity. It also enables a semiconductor photodetector can measure very bright light without saturation or damage, and at elevated temperature. Such a photodetector realized in Ge-doped AlN demonstrates linear, non-saturating photoresponse for visible illumination power density up to ≥10.8 W / cm2 and operating temperature up to ≥200° C.

This invention discloses an experimental method for measuring the electron-hole recombination emission rate. The apparatus for this method includes a laser chip (with an anti-reflection coating on only one end of its horizontal two-sided end face), a plano-convex lens, a polarizer, a fiber optic coupler, an optical fiber, and a spectrometer. The plano-convex lens, polarizer, plano-convex lens, and fiber optic coupler are placed sequentially on the same horizontal line on both sides of the chip. The fiber optic coupler is connected to the spectrometer via an optical fiber. First, energy is applied to the laser chip, causing it to emit light from both sides. The spectra from both sides are focused onto the fiber optic coupler by the plano-convex lens and then transmitted to the spectrometer via the optical fiber. By rotating the polarizer, different polarization spectra can be selected to obtain specific spectral images under transverse electric / magnetic field modes. Finally, by substituting the spectral data from both ends into the established formula, the electron-hole recombination rate of the laser chip can be calculated.

The invention provides a light emitting diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises an n-type semiconductor layer, a multi-quantum well layer, an insertion layer and a p-type semiconductor layer which are sequentially stacked together. Wherein each of the n-type semiconductor layer and the p-type semiconductor layer comprises a GaN layer; and the insertion layer is a C-doped GaN layer. According to the invention, the stark effect can be weakened, and the electron-hole recombination luminous efficiency in the multi-quantum well layer can be improved.

The invention provides an inter-band cascade laser epitaxial structure. The inter-band cascade laser epitaxial structure comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, an active cascade region, an upper waveguide layer, an upper limiting layer and a contact layer, wherein the lower limiting layer is used for limiting laser leakage in a first direction, and the upper limiting layer is used for limiting laser leakage in a second direction; the band gap width of the lower waveguide layer is between the lower limiting layer and the active cascade region, the band gap width of the lower waveguide layer is greater than the band gap width of the active cascade region, and the refractive index of the lower waveguide layer is greater than the refractive index of the lower limiting layer; and the active cascade region comprises one or more periods of injection composite laminated layers, and each injection composite laminated layer comprises an electron injection region, a hole injection region and an electron-hole recombination region arranged between the electron injection region and the hole injection region. Compared with a traditional W-type quantum well, the laser epitaxial structure provided by the invention has the advantages that the interaction between electrons and holes is stronger, and the optical gain is higher.

The invention relates to the field of photocatalysis, in particular to the field of organic matter selective oxidation coupling hydrogen production, and particularly relates to a photocatalyst as well as a preparation method and application thereof. The invention provides a photocatalyst with spatially separated oxidation sites and reduction sites constructed on a CdS rod, namely a metal sulfide reduction cocatalyst is loaded at two ends of the CdS rod, and a CoS oxidation cocatalyst is loaded on a rod body; under illumination, photo-induced electrons are rapidly migrated to reduction sites at the two ends to drive water splitting to produce hydrogen, and holes are synchronously migrated to oxidation sites to catalyze high-selectivity oxidation of benzyl alcohol into benzaldehyde. Hydrogen production and organic matter oxidation are synergistically coupled, so that electron-hole recombination is remarkably inhibited, and two high-value products are output at the same time. Experimental results show that the hydrogen production rate and the benzaldehyde generation rate of the CdS-MoS2-CoS spatial separation catalyst are respectively increased by 116 times and 22.8 times compared with those of an original CdS rod, and efficient separation and full utilization of photon-generated carriers by the CdS-MoS2-CoS spatial separation catalyst are fully verified.

The present application provides a UV LED and a method for manufacturing the same. In the manufacturing method, an N-type transition layer is formed on an electron-supplying layer and / or a P-type transition layer is formed on a hole-supplying layer. The materials of both the electron-supplying layer and the hole-supplying layer include at least Al, Ga, and N, and the materials of the N-type transition layer and the P-type transition layer are GaN. An N-electrode is formed on the N-type transition layer, and an ohmic contact is formed between the N-type transition layer and the N-electrode. A P-electrode is formed on the P-type transition layer, and an ohmic contact is formed between the P-type transition layer and the P-electrode. Compared to directly forming an ohmic contact electrode on an aluminum-containing GaN-based material, this method avoids annealing, and avoids degradation of the electron-supplying layer's performance due to high temperatures during the annealing process, thereby reducing the electron-hole recombination rate in the active layer.

The present invention discloses a piezoelectric-photocatalytic water decomposition hydrogen production Cu-P / CdS catalyst with a distorted [CdS4] structure and its preparation method and application, belonging to the field of catalyst and hydrogen energy technology. The present invention provides a water decomposition hydrogen production Cu-P / CdS catalyst, the preparation method of which includes: dispersing a cadmium source and a sulfur source in water, heating to 130-150°C for reaction, and preparing CdS; CdS is dispersed in a copper source aqueous solution and dried to obtain a powder; the powder is mixed with a phosphorus source and calcined to obtain a piezoelectric-photocatalyst. The present invention suppresses electron-hole recombination by embedding an electron-withdrawing group Cu-P on the surface of non-centrosymmetric CdS, forming a [0001] direction piezoelectric polarization, causing [CdS4] to be distorted and forming an electronic dipole moment, providing electron-hole migration and separation driving force, greatly improving hydrogen production activity and stability, and without the need for loading precious metals, reducing production costs.

The invention relates to the technical field of catalysts, in particular to a photocatalyst based on CdS / UiO-67 in-situ reconstruction and a preparation method and application thereof. The preparation method comprises the following steps: step 1, preparing defect type UiO-67 by adjusting ligand deletion; step 2, loading the CdS nano particles on the defect type UiO-67 through an in-situ deposition method; and step 3, loading Pt on the surface of the CdS to serve as a cocatalyst, and preparing Pt / CdS coated UiO-67 by utilizing a photo-reduction method. According to the invention, by introducing the defect type UiO-67 carrier, the carrier migration path is optimized, and electron-hole recombination is reduced. By loading a CdS semiconductor and a trace Pt cocatalyst, efficient photocatalytic hydrogen production is realized. And the stability and activity of the material are further improved by utilizing the structural recombination characteristic after illumination.

The present invention belongs to the technical fields of material catalysis and catalyst preparation, and discloses a nitrogen-doped perovskite catalyst, a preparation method thereof and an application thereof. The perovskite-type catalyst is prepared by a hydrothermal method, a sol-gel method or a co-precipitation method, and DBD is used to cooperate with the catalyst to remove NO x , and in the process of DBD cooperating with the high-efficiency removal of NO in industrial waste gas x , using nitrogen oxide pollutants as a nitrogen source, a nitrogen-doped perovskite-type catalyst capable of being applied to the photocatalytic removal of Hg 0 is synthesized. This not only omits the pretreatment process of forming a nitrogen-doped catalyst by introducing a nitrogen component in the prior art, but also enables the prepared nitrogen-doped perovskite catalyst to have the advantages of high visible light utilization rate, low photogenerated electron-hole recombination rate, excellent mercury removal efficiency and stable catalytic performance. This method is simple and easy to implement, has low energy consumption and high recycling rate, and realizes the resource utilization of the catalyst after denitrification.

The invention discloses a preparation method for in-situ construction of a Zr-MOF (at) Bi5O7I (at) LDH ternary core-shell heterojunction photocatalytic membrane, and belongs to the technical field of photocatalytic membranes. The method comprises the following steps: pretreating a PVDF membrane; growing a Zr-MOF (at) Bi5O7I binary heterojunction on the film through in-situ co-deposition; and finally, vertically growing an LDH shell on the surface of the binary heterojunction in situ through a hydrothermal method to form a core-shell structure. The core innovation point is that tight coupling and precise energy band matching of the three active components at the micro-nano scale are realized through a sequential in-situ growth technology, and the problems of non-uniform component dispersion and weak interface bonding of the traditional composite membrane are solved. Zr-MOF enhances adsorption and provides reaction sites, BiOI widens the light absorption range, LDH shell improves the catalytic stability, and Zr-MOF, BiOI and LDH shell synergistically construct an efficient Z-type charge transfer path and a strong built-in electric field to reduce the electron-hole recombination probability. The prepared photocatalytic membrane has a degradation rate of more than 96% for degradation-resistant organic matters such as RhB in 60 min, has excellent cycle stability, is easy to recover, has no secondary pollution, and has a wide application prospect in the field of deep water purification.

The invention relates to the technical field of high-voltage motors, in particular to a device and a method for characterizing the uniformity of a nonlinear anti-corona material of a large-scale high-voltage motor. According to the large-scale high-voltage motor nonlinear anti-corona material uniformity characterization device and method provided by the invention, high voltage is applied to the material in the darkroom in the shell, and the probe measures the frequency of the wavelength of radiation light emitted by the material due to electron-hole recombination under the high voltage; the forbidden bandwidth of the nonlinear anti-corona material of the large-scale high-voltage motor is obtained through calculation according to a photon energy formula, the insulating capacity of the nonlinear anti-corona material of the large-scale high-voltage motor is evaluated on the microscopic level, the closer the forbidden bandwidth is, the higher the degree of uniformity is, and otherwise, the lower the degree of uniformity is. According to the method, the microscopic quantum-level characterization of the insulating capacity of the nonlinear anti-corona material of the large-scale high-voltage motor is realized, the influence of the nonlinear anti-corona material of the large-scale high-voltage motor on the forbidden band width when the filler doping content is changed is determined, and guidance is provided for understanding the microscopic characteristics and material modification optimization of the nonlinear anti-corona material of the large-scale high-voltage motor.