CdS/BiVO4 compound semiconductor photocatalyst and preparation and application thereof

A compound semiconductor and photocatalyst technology, applied in physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve the problems of photocorrosion, reduce the utilization rate of photogenerated holes, etc., and achieve simple raw materials and easy operation. , the effect of reducing costs

Inactive Publication Date: 2016-05-11
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when CdS is used alone as a photocatalyst, there is a phenomenon...

Method used

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  • CdS/BiVO4 compound semiconductor photocatalyst and preparation and application thereof
  • CdS/BiVO4 compound semiconductor photocatalyst and preparation and application thereof
  • CdS/BiVO4 compound semiconductor photocatalyst and preparation and application thereof

Examples

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Embodiment 1

[0024] CdS / BiVO of the present invention 4 A compound semiconductor whose nominal composition is xCdS / (1-x)BiVO 4 , where x=0.5, (x represents the molar percentage of CdS in the system), and its specific preparation steps are as follows:

[0025] a) Weigh 1.4552gBi(NO 3 ) 3 ·5H 2 O dissolved in 4mol / L dilute HNO 3 In, weigh 0.351gNH 4 VO 3 Dissolve in 2mol / L NaOH solution, place on a magnetic stirrer and stir for 30 minutes to obtain solutions A and B; slowly drop B solution into A solution under constant stirring, continue stirring for 30 minutes, and then mix the solution Transfer to a high-pressure reactor, add deionized water to 80% of the volume of the reaction lining, adjust the pH to 5; heat to 160 ° C, keep warm for 9 hours; take out and cool naturally, centrifuge the obtained solution, and use deionized water and absolute ethanol Wash 2-3 times and dry at 80°C to get BiVO 4 .

[0026] b) Weigh 0.183gCdCl 2 and 0.264gNa 2 S·9H 2 O was dissolved in 30ml deio...

Embodiment 2

[0029] CdS / BiVO of the present invention 4 A compound semiconductor whose nominal composition is xCdS / (1-x)BiVO 4 , where x=0.5, (x represents the molar percentage of CdS in the system), and its specific preparation steps are as follows:

[0030] a) Weigh 1.4552gBi(NO 3 ) 3 ·5H 2 O dissolved in 3mol / L dilute HNO 3 In, weigh 0.351gNH 4 VO 3Dissolve in 3mol / L NaOH solution, place on a magnetic stirrer and stir for 30 minutes to obtain solutions A and B; slowly drop B solution into A solution under constant stirring, continue stirring for 30 minutes, and then mix the solution Transfer to a high-pressure reactor, add deionized water to 80% of the volume of the reaction lining, adjust the pH to 5; heat to 180 ° C, keep warm for 12 hours; take out and cool naturally, centrifuge the obtained solution, and use deionized water and absolute ethanol Wash 2-3 times and dry at 80°C to get BiVO 4 .

[0031] b) Weigh 0.183gCdCl 2 and 0.264gNa 2 S·9H 2 O was dissolved in 30ml deio...

Embodiment 3

[0033] CdS / BiVO of the present invention 4 A compound semiconductor whose nominal composition is xCdS / (1-x)BiVO 4 , where x=0.4, (x represents the molar percentage of CdS in the system), and its specific preparation steps are as follows:

[0034] a) Weigh 1.4552gBi(NO 3 ) 3 ·5H 2 O dissolved in 2mol / L dilute HNO 3 In, weigh 0.351gNH 4 VO 3 Dissolve in 4mol / L NaOH solution, place on a magnetic stirrer and stir for 30 minutes to obtain solutions A and B; slowly drop B solution into A solution under constant stirring, continue stirring for 30 minutes, and then mix the solution Transfer to a high-pressure reactor, add deionized water to 80% of the volume of the reaction lining, adjust the pH to 5; heat to 160 ° C, keep warm for 9 hours; take out and cool naturally, centrifuge the obtained solution, and use deionized water and absolute ethanol Wash 2-3 times and dry at 80°C to get BiVO 4 .

[0035] b) Weigh 0.183gCdCl 2 and 0.264gNa 2 S·9H 2 O was dissolved in 30ml deio...

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Abstract

The present invention discloses a CdS / BiVO4 compound semiconductor photocatalyst and preparation and application thereof, and belongs to the technical field of environmental material preparation. First, BiVO4 powder is prepared by a solvothermal method, and then a CdS / BiVO4 compound semiconductor is synthesized hydrothermally. The monoclinic BiVO4 is prepared by the method, and the BiVO4 as a carrier is loaded with CdS nanoparticles, the photocatalyst specific surface area is increased, the electron-hole recombination rate is reduced, the BiVO4 photocatalytic activity is improved, and the CdS / BiVO4 compound semiconductor photocatalyst can effectively degrade organic dyes in sewage.

Description

technical field [0001] The invention belongs to the technical field of preparation of inorganic functional materials, and relates to a photocatalyst and a preparation method thereof, in particular to a CdS / BiVO 4 Compound semiconductor photocatalyst, preparation and application. Background technique [0002] At present, many semiconductor photocatalysts such as TiO 2 , tantalate, niobate, etc. have a wide band gap, so that the photocatalyst can only respond in the ultraviolet range, and only 5% of the total solar energy is in the ultraviolet part with a wavelength below 400nm, which is obviously not enough to achieve effective At the same time, we know that sunlight energy is mainly concentrated in the visible light range, generally with a wavelength of 400-700nm, and this part of energy accounts for about 43% of the total energy. Therefore, in order to improve the utilization rate of solar energy and finally realize the industrial application of photocatalytic technology,...

Claims

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Application Information

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IPC IPC(8): B01J27/04A62D3/17A62D101/26A62D101/28
Inventor 王雄田鹏张旻邹磊
Owner NANJING UNIV OF SCI & TECH
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