9results about How to "Large horizontal size" patented technology

The disclosed invention relates to a household appliance. The disclosed invention includes a heating coil formed of conductors stacked in a plurality of layers in a vertical direction, in which a horizontal outer shape of the heating coil is a polygon. Accordingly, an increase in the horizontal dimension of the heating coil is suppressed to increase the pattern cross-sectional area per turn of the heating coil, and thus an increase in the temperature of the heating coil can be effectively suppressed.

This invention relates to the field of bridge engineering technology, and particularly to a beam transport device and system. The beam transport device includes a frame and a wheel assembly connected together, the wheel assembly driving the frame to move. It also includes: a pig frame connected to the frame, the pig frame protruding from both sides of the frame in the direction of travel; auxiliary wheel assemblies connected to the pig frame, at least two auxiliary wheel assemblies distributed on both sides of the frame in the direction of travel, and all auxiliary wheel assemblies located on the outer side of the wheel assembly, the auxiliary wheel assemblies being capable of rolling; a height adjustment component is also provided between the pig frame and the auxiliary wheel assemblies, the height adjustment component driving the auxiliary wheel assemblies to move closer to or further away from the pig frame. This invention, by setting a pig frame on the frame, can increase the lateral dimension of the bearing surface, enabling the beam transport device to transport wider loads; the height adjustment component between the auxiliary wheel assemblies and the pig frame allows adjustment of the distance between the pig frame and the auxiliary wheel assemblies, enabling the beam transport device to adapt to horizontal and sloping road sections.

This invention relates to a method for preparing tritelluride microsheets, comprising the following steps: Step 1, M... 2+ and / or M 3+ A precursor solution is obtained by dissolving the precursor solution in an organic solvent. Tri-n-octylphosphine and Te are then mixed to obtain a mixed solution; M is at least one of Cr, V, and Gd. Step two: The precursor solution and the mixed solution are stirred and reacted to obtain MTe3 seed crystals. Step two: The MTe3 seed crystals are added to the precursor solution and then to the mixed solution for further reaction to obtain tritelluride microsheets. This method allows for balanced and controllable crystal growth, significantly improving the lateral dimensions and crystal integrity of the CrTe3 microsheets. The CrTe3 microsheets prepared using this method exhibit excellent structural integrity, with lateral dimensions ranging from 2 to 200 μm, and demonstrate intrinsic ferromagnetic behavior at high Curie temperatures, providing a new technical approach for the large-scale fabrication of high-performance two-dimensional magnetic materials and spintronic devices.

This invention relates to the field of two-dimensional layered material fabrication technology, specifically to a two-dimensional tin diselenide crystal, its preparation method, and its applications. The invention provides a method for preparing a two-dimensional tin diselenide crystal. Inside a single-temperature zone tube furnace, a selenium source, a tin source, and a blank substrate are placed sequentially according to the gas flow direction. The axial direction of the gas inlet flange is adjusted to form an inclination angle of 1-7° relative to the horizontal direction of the inner tube of the single-temperature zone tube furnace. Under specific reaction conditions, a two-dimensional tin diselenide crystal is deposited on the blank substrate. This method can prepare two-dimensional tin diselenide crystals with a lateral dimension greater than or equal to 400 μm, a thickness less than or equal to 10 nm, and no obvious stacking. The obtained crystals are expected to meet the fabrication requirements of high-performance, large-area devices. This fabrication process has good versatility and high reproducibility, providing a new reference approach for the controllable growth of other layered two-dimensional materials.

The present application relates to a kind of suture anchor implantation device, including self-drilling rod body (1), nail body (2), suture anchor (5) and fixed suture (6);Two suture grooves (8) are formed on the outer surface of self-drilling rod body (1) along the length direction;Nail body (2) is keyed to one end of self-drilling rod body (1);Through hole I (12) is provided on nail body (2), and one end of nail body (2) is pointed end;Suture anchor (5) and fixed suture (6) are all passed through through hole I (12), and the two ends of fixed suture (6) are respectively passed out along two suture grooves (8), and the two ends of suture anchor (5) are free end.The suture anchor implantation device of the present application can automatically knot during implantation, without subsequent pulling suture knot;Knot position is fixed, and knot displacement will not occur;Hole depth is relatively shallow, and bone removal amount is small;Interference between hole and hole is smaller, and the number of anchor points that can be implanted per unit area is more, and the range of optional area of operation is wide.

This invention belongs to the field of inorganic nanoparticle preparation technology, and relates to a ball milling modification method for bifunctionalized thin-layer hexagonal boron nitride: Hexagonal boron nitride powder, guanidine hydrochloride, and urea are continuously heated and stirred to obtain a homogeneous mixture of a eutectic solvent formed by guanidine hydrochloride and urea and the hexagonal boron nitride powder; this mixture is poured into a ball mill jar containing grinding balls and a liner, and a certain amount of ethanol and water are added as dispersants for high-energy ball milling; after the material is separated from the grinding balls, the milled material is vacuum filtered, dried, and the resulting powder is dispersed in water, then ultrasonicated, allowed to stand, vacuum filtered, and dried to obtain bifunctionalized thin-layer hexagonal boron nitride. This invention not only has the advantages of readily available raw materials and simple process, but also high efficiency, environmental friendliness, and low energy consumption. The hexagonal boron nitride obtained by this method has thinner layers, good biocompatibility, low relative density, and good thermal conductivity.

The invention relates to a heating coil assembly, a household appliance with the heating coil assembly and a manufacturing method of the household appliance. The present invention comprises a heating coil formed of a plurality of layers of conductors vertically stacked, in which the horizontal outer shape of the heating coil is a polygon. Accordingly, an increase in the horizontal size of the heating coil is suppressed while increasing the pattern cross-sectional area per turn of the heating coil, and thus an increase in the temperature of the heating coil can be effectively suppressed.

The invention belongs to the technical field of nano material preparation, and particularly relates to a method for preparing a few-atomic-layer ultrathin SnSe nanosheet based on an intercalation compound precursor. The invention discloses a method for preparing a low-atomic-layer ultra-thin (lt; lt) material by taking ethanolamine as an intercalator based on an intercalation-de-intercalation strategy. According to the method, ethanol amine is used as an intercalator through a hydrothermal method, an ethanol amine intercalated SnSe hybrid precursor is firstly synthesized, then the ultrathin SnSe nanosheet is obtained through deintercalation treatment, the thickness of the prepared nanosheet can reach the atomic level (about 2-3 atomic layers), and the method is simple in process, low in cost, high in product quality and suitable for industrial production. The problems that an existing process is complex, and product size and thickness are difficult to control are solved. In addition, the ultrathin SnSe nanosheet prepared by the method shows excellent application prospects in the fields of piezoelectric devices, photoelectric detection, flexible electronics, energy conversion and the like.

The invention discloses a two-dimensional antiferromagnetic material and a preparation method and application thereof, and the method comprises the following steps: adopting Mn and Te elementary substance powder, taking I2 as a transportation agent, and synthesizing a blocky MnTe precursor through a vacuum chemical vapor transport method under a vacuum sealing condition; the preparation method comprises the following steps: mixing a ground MnTe precursor with In elementary substance powder and fluxing agent KCl powder, carrying out fluxing reaction in a vertical confinement space constrained by a constant normal pressure and in an inert atmosphere, and inducing the crystal to epitaxially grow along the horizontal direction, thereby forming a two-dimensional Mn (InTe2) 2 crystal on a fluorine crystal mica substrate, and carrying out wet transfer to obtain the two-dimensional Mn (InTe2) 2 crystal on a SiO2 / Si substrate, according to the method, the two-dimensional Mn (InTe2) 2 crystal with the antiferromagnetic characteristic is prepared through a step-by-step precursor induction type confinement pressure melting epitaxial method, and the method is simple in process and high in repeatability; the two-dimensional Mn (InTe2) 2 crystal has the characteristics of good crystal quality, large transverse size, controllable layer number and the like, and can be applied to a high-density magnetic storage device.