134results about How to "Large horizontal size" patented technology

A semiconductor structure includes backside dummy plugs embedded in a substrate. The backside dummy plugs can be a conductive structure that enhances vertical thermal conductivity of the semiconductor structure and provides electrical decoupling of signals in through-substrate vias (TSVs) in the substrate. The backside dummy plug can include a cavity to accommodate volume changes in other components in the substrate, thereby alleviating mechanical stress in the substrate during thermal cycling and operation of the semiconductor chip. The backside dummy plug including the cavity can be composed of an insulator material or a conductive material. The inventive structures can be employed to form three-dimensional structures having vertical chip integration, in which inter-wafer thermal conductivity is enhanced, cross-talk between signals through TSVs is reduced, and/or mechanical stress to the TSVs is reduced.

The invention provides a foundation-based atmosphere profile microwave detector. The detector is characterized by comprising an antenna feeder unit, a radiometer receiving unit and a scanning mechanism unit, wherein the antenna feeder unit comprises two independent antenna feeder sub-units for two wavebands and is provided with two-frequency independent reflective surfaces; the two independent antenna reflective surfaces are arranged at two ends of the output shaft of a scanning motor respectively, can realize beam scanning through motor rotation, and are used for receiving microwave radiation of atmosphere and an internal calibration reference source; the radiometer receiving unit comprises a directional coupler, a radio amplifier, a power divider, a band pass filter, a square law detector, an integrator and a video amplifier, and is used for realizing intermediate frequency detection of a received signal; the scanning mechanism unit comprises a scanning shaft, a scanning step motor, two front ends and a sub-miniature type A (SMA) connector; and driven by the scanning motor, the scanning shaft drives the two reflective surfaces to circumferentially scan so as to realize observation on sky in different incident angles and measurement on an internal calibration blackbody and acquire data which is acquired in a measurement and periodic internal calibration unit.

The present invention relates to earphone arrangements configured to accommodate an acoustically-resistant couple within the compact dimensions of ear-bud type earphones, and aims to incorporate a front volume to rear volume acoustic couple into an earphone without requiring significant addition to the lateral dimensions of the earphone. The earphone has an elongate sound outlet port that locates into a listener's ear canal and bears an internal support surface which is apertured and communicates with the outlet port. A microspeaker is supported on the support surface and projects sound through the aperture and toward the outlet port. Furthermore, the housing includes a front cavity in front of the microspeaker and in communication with the outlet port, and a rear cavity behind the microspeaker. The support surface bears a recess that communicates with the front cavity, and an acoustic resistor is accommodated in the recess.

The invention provides a liquid-phase peeling preparation method of two-dimensional black phosphorus nanosheets. The liquid-phase peeling preparation method comprises the following steps: adding blocky black phosphorus and a phosphorus-containing ionic liquid into an organic solvent in a mass ratio of 1:(0.5-100) so as to obtain a mixed liquid, under an anaerobic condition of 0-10 DEG C, performing probe ultrasonic treatment on the mixed liquid for 3-7 hours, performing water bath ultrasonic treatment for 1-10 hours, leaving to stand, and performing centrifugal separation on supernate, thereby obtaining the two-dimensional black phosphorus nanosheets. Due to a synergistic effect of the phosphorus-containing ionic liquid and the organic solvent, the purpose of peeling the blocky black phosphorus into large-size two-dimensional black phosphorus nanosheets with high efficiency and low cost can be achieved. The invention further provides the two-dimensional black phosphorus nanosheets which is prepared by using the liquid-phase peeling preparation method.

The invention relates to a method for producing aluminum oxide powder, which is to product high-purity aluminum oxide powder by melting high-purity aluminum, atomizing and hydrolyzing. The aluminum oxide powder product prepared by the method has extremely high purity, and when used as a raw material for producing sapphire crystals by a flame melt process, can improve the transparency and color purity of the sapphire crystals effectively, reduce the defect rate of small sapphire crystals considerably and increase the volume of boule bars of the sapphire crystals produced by the flame melt process effectively. The method adopts a simple process flow, solves pollution problems such as waste gas emission and is environmentally-friendly.

A method for increasing the throughput, or the precision, or both the precision and the throughput, of a flow cytometer, or of a hematology analyzer employing a flow cytometer, and for further reducing the complexity of such a cytometer or analyzer, by utilizing the technique of laser rastering in combination with a lysis-free single-dilution method. Laser rastering involves sweeping a laser beam across a flowing sample stream in a hematology analyzer. A lysis-free single-dilution method involves performing all the flow cytometer measurements on a sample using a single aliquot, a single lysis-free reagent solution, a single dilution, and a single pass of said dilution through the measurement apparatus. An apparatus suitable for carrying out the method of this invention comprises an optical module comprising a source of light, a scanning device, a lens or system of lenses, a flowcell, detectors, and filters; and an electronic module comprising preamplifiers, analog signal conditioning elements, analog-to-digital converters, field-programmable gate arrays, digital signal processing elements, and data storage elements.

Method is proposed of angular coordinates determination for observer's head relative to three mutually perpendicular axes of fixed (or tied to an object) coordinate system OXYZ (angle of roll, azimuth, elevation angle) by use of measuring system based on light-sensitive sensor with collimating lens fixed relative to coordinate system and LED lasers installed on head-mounted module HMM. Measuring device registers angular coordinates of narrow pencils of rays formed by LED lasers and provides determination of observer's head angular coordinates in real-time. Three angles of HMM can be determined by proposed method while no less than two LED lasers are in lens field of view with angle Δ of set value and direction included between their axes. To provide specified measurement range of observer's head angles exceeding lens field of view LED lasers matrix is installed on HMM containing LED lasers allocated in several horizontal and vertical lines

A urinary sphincter control device for application to a urethra to control flow of fluid through the urethra, comprises a cuff which can be fitted around the urethra. The cuff comprises a plurality of chambers which extend generally parallel to the axis of the cuff, and which can be inflated by supply of pressurised control fluid thereto. Inflation of the chambers causing the configuration of the cuff to change so as to alter the resistance that is provided by the cuff to flow of fluid along the urethra.

The invention provides an SOI horizontal power MOSFET device and belongs to the technical field of power semiconductor devices. A dielectric groove is introduced in a drift region and filled with two or more dielectric materials, and the dielectric coefficients of the dielectric materials are lower than the dielectric coefficient of an active layer and are gradually decreased from bottom to top; the side, close to a body region, of the dielectric groove is of a body region longitudinal extension structure; a semiconductor buried layer opposite to the drift region in doping type is arranged between the dielectric groove and a dielectric buried layer. Because the dielectric groove filled with the variable k dielectric materials has an modulating action on an internal electric field of the active layer and plays a role in longitudinally folding the drift region, the voltage resistance of the device is greatly improved, and the horizontal size of the device is reduced; because of introduction of the body region longitudinal extension structure and the semiconductor buried layer, the voltage resistance of the device is further improved, the exhausting action on the drift region is enhanced, the doping concentration of the drift region can be improved, and therefore the on resistance of the device is reduced; the grid and drain capacitance of the device can be further reduced through the dielectric groove, and the frequency and output power of the device are improved.

The invention relates to a low-cost and high-load specialized plant-protection unmanned aerial vehicle and a driving method. The unmanned aerial vehicle comprises a flight mechanism, a posture controlling mechanism and a pesticide spraying system which are arranged on a rack, wherein the flight mechanism provides power output for the taking off and landing of the unmanned machine and adjustment of the flight height of the unmanned machine, wherein a posture adjustment mechanism is used for adjusting the aviation and the flight posture of the unmanned aerial vehicle to ensure that the unmanned aerial vehicle is positioned on a scheduled operation route; the pesticide spraying system is used for controlling the pesticide spraying system to spray the pesticide when the plant-protection unmanned aerial vehicle arrives at the scheduled operation area. According to the plant-protection unmanned aerial vehicle and the driving method, transversal type reversed rotation dual rotors driven by an engine are adopted, lift force of a height direction of the unmanned aerial vehicle is provided, and the unmanned aerial vehicle is high in loading capability, long in working time and high in working efficiency; once two pairs of power-driven small rotors are adopted, the thrust required by adjustment of horizontal direction posture and the operation flight of the unmanned aerial vehicle are provided, and the driving of the unmanned aerial vehicle in a three-dimensional space is completely decoupled. The unmanned aerial vehicle has the advantages of simple structure and control principles, convenience in repairing, easiness in learning of remote control operation, and low use and maintenance cost.

The invention relate to a novel method for preparing a high quality graphene material, and aims to satisfy the massive needs of high quality and low cost graphene. According to the preparation method, physical parameters such as mixed solution surface tension, viscosity, and the like should be maintained in a certain range; in realtime measurement, the surface tension and viscosity can be adjusted at the same time, or various raw materials can be added at random. Shearing and stirring equipment such as shearing emulsifying machine is adopted to shear and stir the raw materials, and then an ultrasonic wave treatment is adopted to obtain graphene dispersion liquid. The obtained graphene has a very large transverse dimension and extremely high concentration, the thickness is within four layers; due to the adopted non-oxidation method, the conductivity of graphene is high; the method is simple, no complicated technology or procedure is used, and the method is suitable for massive industrial production.

A MOPA laser system that includes a seed laser configured to output pulsed laser light, an amplifier configured to receive and amplify the pulsed laser light emitted by the seed laser; and a pump laser configured to deliver a pump laser beam to both the seed laser and the amplifier.

The invention provides a two-dimensional lamellar porous black phosphorus material. Multiple holes are formed in a lamellar layer of the two-dimensional lamellar porous black phosphorus material, and lateral dimension of the two-dimensional lamellar porous black phosphorus material is 10-100 mu m. The lateral dimension of the prepared two-dimensional lamellar porous black phosphorus material is larger, multiple holes are formed in the surface, the stability is higher, and the two-dimensional lamellar porous black phosphorus material can be widely applied to fields of energy, photoelectric or photo-thermal devices and the like. The invention further provides the two-dimensional lamellar porous black phosphorus material as well as a preparation method and an application thereof.

The present invention discloses porous graphene and a preparation method therefor. The preparation method comprises the following steps: adding a graphite raw material into an acetic acid solution of chitosan; and by taking chitosan as a peeling agent, carrying out ultrasonic treatment and centrifugal purification to prepare the porous graphene material. The graphene material not only has a porous structure, but also is relatively few in number of layers, and the transverse size of the flaky layer is relatively large. Compared to the prior art, as only ultrasonic treatment is carried out, the preparation method is simple and easy to implement; as the graphite is taken as the raw material, the prepared porous graphene material is high in degree of graphitization. The porous graphene material has a huge application value in the fields of absorption, catalysis, gas separation, super capacitors and the like.

The invention discloses a semiconductor laser. The semiconductor laser comprises a lower-part flat plate waveguide and an upper-part ridge waveguide along a growth direction of an epitaxial layer anda ridge width unchanged region at a back side and a ride width narrowing region at a front side along an optical transmission direction, at the ridge width unchanged region, the ridge width of the upper-part ridge waveguide is maintained unchanged, at the ride width narrowing region, the ridge width of the upper-part ridge waveguide is gradually narrowed, the ridge width of a wide ridge end of theride width narrowing region is equal to the ridge width of the ridge width unchanged region, the ridge width of the ridge end of the ride width narrowing region is smaller than the ridge width of thewide ridge end, a narrow ride end is an optical output end, at the ridge width narrowing region, the equivalent refractive index of the upper-part ridge waveguide is gradually reduced with the ridgewidth gradually narrowed until the narrow ridge end approaches the equivalent refractive index of the lower-part flat plate waveguide, the longitudinal size and the transverse size of a base mode of the narrow ridge both are increased, so that the longitudinal scattering angle and the transverse scattering angle of output light both are reduced. The scattering angle of the output light of the semiconductor laser provided by the invention is smaller than the scattering angle of a conventional ridge waveguide-structure semiconductor laser.