The invention discloses a growth method and equipment of a sapphire crystal. The growth method comprises the following steps of: step S1, placing a high purity sapphire lump material or powder material of a set weight into a crucible, and then placing the crucible into a crystal growth furnace, wherein a guide die is arranged in the crucible; step S2, vacuumizing the crystal growth furnace; step S3, controlling the temperature rise of the crystal growth furnace to 2,000-2,100 DEG C through a main heater until sapphire is smelted into a fusant; step S4, discharging a seed crystal, and carrying out seeding; step S5, growing the crystal at the speed of 10-100 mm/h until the crystal growth ends; step S6, carrying out annealing treatment on a crystal bar, wherein the annealing temperature is 1,600-2,000 DEG C, and the annealing time is for 10-20 hr; step S7, slowly cooling at the speed of 10-60 DEG C per h; and step S8, cooling the temperature in the furnace to room temperature, and taking out the crystal bar. According to the growth method and equipment of the sapphire crystal provided by the invention, a bar-shaped sapphire crystal can be prepared, and the utilization rate of the sapphire crystal is effectively improved. The crystal which grows by using the method is subjected to forming and processing and can be used, as a substrate, for manufacturing LED (Light Emitting Diode) and LD (Laser Diode) devices.