Method for rapidly preparing large-area and uniform black silicon material, and device thereof
A large-area, black silicon technology, applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve the problems of poor surface microstructure uniformity, low efficiency, and inability to meet mass production, and achieve high preparation efficiency and uniformity Good results
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[0028] In order to describe in detail the technical content, structural features, achieved objectives and effects of the present invention, the following is a detailed description in conjunction with specific embodiments and accompanying drawings.
[0029] The invention discloses a method and equipment for rapidly preparing large-area black silicon material by using pulsed laser raster scanning. figure 1 It is a schematic diagram of the equipment structure and laser light path for the rapid preparation of black silicon materials. The laser 10 emits a pulsed laser beam, the pulse width ranges from femtoseconds to milliseconds, including femtoseconds, picoseconds, nanoseconds, etc.; the output frequency of the laser 10 ranges from 0.1-100K Hz, and the single pulse energy output by the laser 10 ranges from 0.1 milliseconds Joule-1000 Joule range. Since the beam output by the laser 10 is generally a circular beam, in order to obtain a surface microstructure with uniform physical and ...
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