Method for integrating silicon-based lithium niobate thin film electro-optic modulator arrays
An electro-optic modulator, silicon-based lithium niobate technology, applied in light guides, optics, instruments, etc., can solve the problems of lower conversion rate of electro-optic modulation, low modulation efficiency of doped silicon, high half-wave voltage, etc., to ensure functional effectiveness and stability, improving preparation efficiency, and the effect of ultra-high modulation bandwidth
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[0036] The technical solution of the present invention will be described in detail below with reference to the drawings and embodiments, and detailed implementation and structure are given, but the protection scope of the present invention is not limited to the following embodiments.
[0037] See figure 1 , figure 1 It is a partial structural diagram of an embodiment of a lithium silicon-based lithium niobate thin film electro-optic modulator array of the present invention. The integration method of the present invention's lithium silicon-based lithium niobate thin film electro-optic modulator array includes the following steps:
[0038] 1) Oxidize the silicon oxide film layer 3 on the smooth silicon crystal substrate 2 by thermal oxidation method;
[0039] 2) Using chemical vapor deposition (CVD) to deposit a certain thickness of polysilicon on the silicon oxide film layer 3, and then dry or wet etching to form a plurality of silicon-based lithium niobate thin film electro-optic mo...
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