35results about How to "Improve electro-optic efficiency" patented technology

The LED or LD projection display comprises LED or LD light, projection lens system, signal modulator, with the light being at least one of them formed matrix light, or coupling them optically into the optical fiber matrix, with the signal modulator used for loading signal, light output path installed with projected lens system. It can realize large screen display with high electric optical efficiency, long in durability, simple in system and bright in color.

The invention provides a small constant-temperature air-cooling repetition-rate DPL (Diode Pump Laser) without a TEC (ThermoElectric Cooler) and aims at providing the DPL laser, which has stable pulse repetition rate, large laser energy output and high reliability and is capable of reliably working under the high or low temperature environment of -40 DEG C to +65 DEG C and a certain impact vibration environment. The DPL laser is implemented through the technical scheme as follows: an output mirror and a holophote are arranged on one titanium alloy metal frame structure surface, and are located on one face of a 180-degree fold resonator and the other end of a titanium alloy frame body, and a tetrahedral prism with three mutually vertical surfaces is taken as a 180-degree light path folded mirror; a diode laser array pumping source is quickly heated in an area from the low temperature to the normal temperature, namely -40 DEG C to +39 DEG C, by a ceramic heating element under an air-cooling fin; when the diode laser array pumping source is heated to a normal working temperature range, a temperature sensor carries out motion control on the ceramic heating element to stop heating; when the temperature of the diode laser array pumping source is higher than +70 DEG C, the diode laser array pumping source is quickly cooled by a high-speed cooling fan under a heat sink of the diode laser array pumping source.

A high-power 885 nm laser diode side pump Nd:YAG laser module comprises a glass tube (1), an Nd:YAG laser rod (2), a laser diode linear array (3) and a reflecting mirror (4), wherein the Nd:YAG laser rod (2) is installed in the glass tube; the laser diode linear array (3) is used for the Nd:YAG laser rod (2) and arranged along the circumference of the glass tube in an equally divided mode. A laser module body (9) is encapsulated by fixing plates (5) at the two sides, a module shell (6) at the upper portion and a module base plate (7) at the bottom. According to the laser module, the 885 nm semiconductor laser diode linear array pumping Nd:YAG crystal rod is adopted, compared with an 808 nm pumping laser module, the thermal load is effectively reduced nearly by 30%, and therefore the thermo-optic effect of the laser module is effectively reduced; pumping light is effectively absorbed in a double-passage mode, and the dosage concentration of the Nd:YAG laser rod is increased, so that laser output of high power and high electro-optic efficiency is achieved.

The invention discloses an ultraviolet solid-state laser with a wavelength of 193 nm. The ultraviolet solid-state laser comprises a solid-state laser with a wavelength of 5793 nm, a first lens, a second lens, a frequency doubling crystal, a focusing lens, a sum frequency crystal, a collimating lens and an ultraviolet coated optical filter are arranged in sequence along the laser beam direction of the solid-state laser with the wavelength of 579 nm. Compared with a traditional aerial discharge ArF excimer laser with a wavelength of 193 nm, the ultraviolet solid-state laser with the wavelength of 193 nm has the advantages of being compact in structure, low in cost, convenient to maintain and stable in performance and the like, and can provide a high-quality ultraviolet source for a photoetching system.

The invention discloses a wavelength-locked high-efficiency semiconductor laser, and belongs to the technical field of semiconductor laser devices. The laser comprises an N-type lower limiting layer, an N-type lower waveguide layer, a quantum well active layer, a P-type upper waveguide layer, an insertion layer, a P-type upper limiting layer and a P-type contact layer from an N-type substrate layer to the top in sequence, the refractive index of the insertion layer is the same as that of the P-type waveguide layer, the conduction type of the insertion layer is N-type, a current limiting layer is formed in the slow axis direction, meanwhile, a grating is formed in the resonance direction, current injection and the grating are formed by etching the insertion layer, and then the P-type upper limiting layer and the P-type contact layer are grown through a secondary epitaxial process. A high-reflection film is evaporated on the rear cavity surface of the laser, and an anti-reflection film is evaporated on the front cavity surface of the laser. The grating is integrated on a laser sheet, meanwhile, good lateral current limitation is formed, the grating and the current limiting layer adopt the same process, the preparation process is simplified, and the laser has the advantages of wavelength locking and high electro-optical efficiency.

The invention discloses a passive Q-switched Nd:YAG intra-cavity 1570nm OPO laser whose two ends output Cr4+. A pulse xenon lamp and an Nd:YAG crystal are positioned in a diffuse-reflection gatheringcavity; a planar resonant cavity comprises a 1.064-micron outgoing mirror and a 1.064-micron totally-reflecting and 1.57-micron outgoing mirror; the Nd:YAG crystal, a Cr4+:YAG Q-switched crystal, a Polaroid, a KTP crystal are arranged coaxially along the direction of an optical path; the 1.064-micron outgoing mirror is positioned outside the Nd:YAG crystal; the 1.064-micron totally-reflecting and1.57-micron outgoing mirror is positioned outside the KTP crystal;af after absorbing energy radiated by a pump source of the pulse xenon lamp, the Nd:YAG crystal generates excited radiation transitionin the wavelength of 1.064 micron; and transition photons form resonance in a laser resonant cavity composed of the 1.064-micron outgoing mirror and the 1.064-micron totally-reflecting and 1.57-micron outgoing mirror, generate 1.064 micron laser giant pulse output after being Q-switched by Cr4+:YAG, and serve as a pump light source generating a light parameter oscillation effect of a nonlinear crystal KTP.

The invention relates to a light gathering cavity of a lamp pump laser and the lamp pump laser, and belongs to the technical field of lasers, the light gathering cavity comprises a ceramic cavity body, a cavity is formed in the ceramic cavity body, a xenon lamp and a laser crystal are arranged in the cavity, and a samarium-doped glass tube covers the laser crystal; the inner wall of the cavity of the ceramic cavity body is coated with a samarium-doped glaze layer; the xenon lamp irradiates the laser crystal to excite the laser crystal to emit light with the wavelength of 1064nm, and the light with the wavelength of 1064nm penetrates through the samarium-doped glass tube and is reflected in the cavity for multiple times through the samarium-doped glaze layer; wherein when the light rays with the wavelength of 1064nm penetrate through the samarium-doped glass tube every time, part of the light rays with the wavelength of 1064nm are absorbed by the samarium-doped glass tube; and when the light with the wavelength of 1064nm passes through the samarium-doped glaze layer to be reflected every time, part of the light with the wavelength of 1064nm is absorbed by the samarium-doped glaze layer. The effect of improving the electro-optical efficiency of the ceramic cavity is achieved.

A patterned substrate includes a substrate body and a plurality of solid patterns. The solid patterns are set on the substrate body, and at least partial pitches between the solid patterns are different.

The invention relates to an optic fiber system, in particular to a three-dimensional circular light system. Laser point light of the three-dimensional circular light system is split by an optical fiber system and then reformed to suitable divergent degrees, and beams then pass through a reflecting cone to form 360-degree circular light. The optical fiber splitting system can be divided into multiple beams, so that three-dimensional circular light spots may be implemented from a single laser source. This three-dimensional circular light system comprises a laser, a lens set and the cone, and the light of the laser reaches the laser set through a light path and then reaches the cone, forming the circular light.

The invention discloses a semiconductor laser-pumped alkali metal laser system with a V-type pumping structure, which comprises a pumping light source, an alkali metal vapor cell, a temperature control system and a laser resonator output mirror. Pumping light is emitted from the pump light source, obliquely incident on the front surface of the alkali metal vapor cell with respect to the axial direction of the alkali metal vapor cell; The temperature control system is arranged close to the rear end face of the alkali metal vapor pool for stabilizing the temperature in the alkali metal vapor pool; The output mirrors of the laser resonator are arranged perpendicular to the axial direction of the alkali metal vapor cell. The output mirrors of the laser resonator and the back end face of the alkali metal vapor cell form the resonator of the laser. The laser is output from the output mirrors of the laser resonator to the outside of the resonator. The invention can realize the natural separation of the pump light and the laser light, avoids the intracavity transmission loss caused by the polarization device, no longer requires the polarization characteristic of the pump light, and can effectively improve the overall electro-optical efficiency of the DPAL system.

The invention belongs to the technical field of laser, and particularly relates to a semiconductor pumping gas laser system based on an electromagnetic driving mode. The system comprises a laser working medium generating device based on an electromagnetic driving mode, a plume region and a semiconductor pumping system. According to the invention, when the system works, the laser working medium generating device ionizes a working medium under the action of an electric field and a magnetic field to generate plasmas, the plasmas are ejected in an accelerated manner under the comprehensive action of an electromagnetic field to form a plume region, a working medium which can be used as a laser gain medium in the plume region realizes laser output under the pumping action of the semiconductor pumping system, and due to the fact that the working medium in the plume region moves at a high speed, waste heat generated in the laser pumping process is efficiently discharged; and the system has the advantages of all-electric operation, light weight, compactness, high specific power, efficient thermal control, single-aperture output and the like, and promotes the development of a new generation of laser light sources with high electro-optical efficiency, high beam quality and high average power.