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Quantum dot light emitting device and display device

A quantum dot light-emitting and quantum dot technology, applied in the field of quantum dot light-emitting devices and display devices, can solve the problem of low electro-optical efficiency of QLED devices, and achieve the effect of improving electro-optical efficiency

Inactive Publication Date: 2018-06-12
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] This application provides a quantum dot light-emitting device, thereby solving the problem of low electro-optic efficiency of QLED devices

Method used

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  • Quantum dot light emitting device and display device
  • Quantum dot light emitting device and display device
  • Quantum dot light emitting device and display device

Examples

Experimental program
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Effect test

Embodiment 1

[0039] An anode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer are formed on the substrate, thereby forming a quantum dot light-emitting device. The quantum dots in the light-emitting layer are red CdSe / ZnS quantum dots, the particle size of the red CdSe / ZnS quantum dots is about 12nm, the thickness of the shell layer is about 1.5nm, and the surface ligand of the red CdSe / ZnS quantum dots is oleic acid , oleic acid and octyl mercaptan; the barrier material particles are zinc sulfide particles, the mass fraction of zinc sulfide particles in the quantum dot luminescent layer is 0.5%, the particle size is about 3nm, and the surface ligands of the barrier material particles are oleic acid and oleic acid . The anode layer is an ITO layer. The hole transport layer includes two sublayers of PEDOT:PSS layer and TFB layer, and the PEDOT:PSS layer is adjacent to the ITO layer. The electron transport layer is a zinc ox...

Embodiment 2

[0042] The quantum dot light-emitting device of Example 2 is substantially the same as that of Example 1, except that the mass fraction of zinc sulfide particles in the quantum dot light-emitting layer is 1.3%.

[0043] The electro-optical efficiency of the quantum dot light-emitting device was tested, and the test results are shown in Table 1.

Embodiment 3

[0045] The quantum dot light-emitting device of Example 3 is substantially the same as that of Example 1, except that the mass fraction of zinc sulfide particles in the quantum dot light-emitting layer is 2.5%.

[0046] The electro-optical efficiency of the quantum dot light-emitting device was tested, and the test results are shown in Table 1.

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Abstract

The invention relates to a quantum dot light emitting device. The device comprises an anode layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathodelayer which are stacked in sequence; the quantum dot light emitting layer comprises quantum dots of a core-shell structure and barrier material particles dispersed in a gap between every two adjacentquantum dots, and the materials of the barrier material particles are the same as the materials of shells of the quantum dots. By dispersing the barrier material particles in the gaps of adjacent quantum dots, the electro-optical efficiency of the quantum dot light emitting device is effectively improved.

Description

[0001] Cross References to Related Applications [0002] This application claims the priority of Chinese patent application "201611240294.0" filed on December 29, 2016, entitled "Quantum Dot Light-Emitting Device and Display Device", the entire content of which is incorporated herein by reference. technical field [0003] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting device and a display device. Background technique [0004] Quantum dot light-emitting diode (QLED) is a device that directly excites quantum dots to emit light. The working principle of QLED is very close to that of organic light-emitting diodes, that is, the external circuit injects electrons and holes into the device through the positive and negative electrodes respectively, and the injected carriers generally pass through the carrier transport layer to the light-emitting layer to recombine and emit light. QLED has the advantages of high de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/115
Inventor 王允军李敬群王思元丁丽娟
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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