Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Secondary refrigerant and preparation method thereof, cooling structure, semiconductor laser bar and heat sink system

A cooling structure and semiconductor technology, applied in semiconductor lasers, lasers, laser parts, etc., can solve the problems of ice particles blocking heat sink microchannels, electrostatic ignition, etc., to improve electro-optical efficiency, prevent accumulation, and wide liquid temperature range. Effect

Pending Publication Date: 2021-11-30
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of brine and its preparation method, cooling structure, semiconductor laser bar, heat sink system to solve the problem of ice particles blocking the heat sink microchannel and static electricity in the microchannel heat sink cooling structure in the prior art. technical problems with fire

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Secondary refrigerant and preparation method thereof, cooling structure, semiconductor laser bar and heat sink system
  • Secondary refrigerant and preparation method thereof, cooling structure, semiconductor laser bar and heat sink system
  • Secondary refrigerant and preparation method thereof, cooling structure, semiconductor laser bar and heat sink system

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] In an embodiment of another embodiment of the present invention, there is provided a method for preparing a refrigerant for a semiconductor laser bar operating at a low temperature according to the above solution, which may include: adding alcohol to the fluoride.

[0042] In an optional embodiment, the volume ratio of the fluoride to the alcohol is 100:1-2:1.

[0043] In an optional embodiment, it may further include: stirring, stirring the fluoride and the alcohols evenly.

[0044]In an optional embodiment, the fluoride is one or more of pentafluoropropane, hexafluoropropane, heptafluoropropane and Freon.

[0045] In an optional embodiment, the alcohols are one or more of methanol, ethanol, and ethylene glycol.

[0046] figure 1 It is a structural schematic diagram of a microchannel heat sink cooling structure according to an embodiment of the present invention.

[0047] Such as figure 1 As shown, in an embodiment of another embodiment of the present invention, a ...

Embodiment 1

[0059] Add 100ml of pentafluoropropane and 10ml of dehydrated ethanol into the beaker, stir well with a glass rod, and measure the temperature of the mixed solution to be -25°C.

Embodiment 2

[0061] Add 100ml of pentafluoropropane and 20ml of dehydrated ethanol into the beaker, stir well with a glass rod, and measure the temperature of the mixed solution to be -25°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a secondary refrigerant and a preparation method thereof, a cooling structure, a semiconductor laser bar and a heat sink system. The secondary refrigerant for operating the semiconductor laser bar at low temperature comprises the following components in parts by volume: 100 parts of fluoride; and 1-50 parts of alcohol. The secondary refrigerant has the characteristics of no corrosion, low toxicity, safety, stability, excellent thermal conductivity, wide liquid temperature range and the like, is suitable for a semiconductor laser bar micro-channel heat sink cooling structure running at low temperature, effectively adjusts the working temperature of a semiconductor laser bar, and improves the electro-optical efficiency of the semiconductor laser bar. According to the secondary refrigerant, the freezing point of impurity water in the secondary refrigerant can be reduced to be lower than the working temperature, and ice particles are prevented from being generated to block a heat sink microchannel. The secondary refrigerant has certain conductivity, can prevent accumulation of static charges in the working process, and avoids the problem of static sparking.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a coolant, a preparation method, a cooling structure, a semiconductor laser bar, and a heat sink system. Background technique [0002] Semiconductor lasers have the advantages of high efficiency, narrow linewidth compared with light-emitting diodes, and all-electric drive, and have a wide range of application prospects, especially in the field of all-solid-state lasers. The pump absorption wavelength of the crystal is an ideal solid-state laser pump source. Due to the low output power of a single semiconductor laser, semiconductor lasers are generally packaged into a one-dimensional array, called a semiconductor laser bar, and can be combined into a two-dimensional array, called a semiconductor laser array. During the use of the semiconductor laser bar, part of the power that cannot be converted into laser output will become waste heat, causing the tempe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K5/10H01S5/024
CPCC09K5/10H01S5/02407
Inventor 薄勇朱铎许家林彭钦军陈中正
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com