368results about "Semiconductor amplifier structure" patented technology

In one embodiment, a system includes a pump light source configured to produce a pump beam of light at a pump frequency and a Stokes light source configured to produce a Stokes beam of light at a Stokes frequency, where the pump and Stokes frequencies are offset by a frequency offset Ω. The system further includes a photonic integrated circuit (PIC) that includes multiple optical waveguides configured to: direct the pump and Stokes beams of light to a sample; receive a Raman signal produced by coherent Raman scattering of the pump and Stokes beams of light at the sample; and direct the Raman signal to an optical receiver. The optical receiver is configured to detect the Raman signal. The optical receiver includes a probe light source configured to produce a probe beam of light at a probe frequency, an optical detector, and an electronic circuit.

A semiconductor optical amplifier (SOA) with a variable optical confinement factor I′ along the length of the device is disclosed. At the input end of the SOA, the optical confinement is high as an optical core is adjacent an optical gain layer, resulting in a high-gain region that rapidly increases the optical signal power. In the central portion of the SOA, the optical confinement is continuously reduced as the optical core is tapered away from the optical gain layer, thereby lowering the gain, but increasing the output saturation power. Near the output end of the SOA, the optical confinement factor is held constant, providing a length of additional gain, thereby further increasing the output power. The SOA may optionally include a spot-size converter region to focus the output optical signal.

The invention discloses a method and a device for outputting large-energy picosecond pulse laser with external synchronization picosecond-level jitter. The device comprises a high-precision time sequence controller, a semiconductor picosecond pulse seed source, an optical isolator and a high-gain and high-stability regenerative amplifier. The semiconductor picosecond pulse seed source outputs low-energy picosecond-level (10-12J, pJ) and low-jitter picosecond-level (10-12s, ps) picosecond pulse seeds under the trigger of a time sequence controller of a high-precision external clock, the picosecond pulse seeds enter the high-gain high-stability regenerative amplifier through the optical isolator, and the high-gain high-stability regenerative amplifier outputs high-energy picosecond-level (10-12s, ps) picosecond pulse seeds under the control and adjustment of the high-precision time sequence controller. The picosecond pulse seed is locked to be regenerated and amplified in the regenerative amplifier, and the energy of the picosecond pulse seed with low energy and low jitter at a picofocus (pJ) level is amplified to uJ-mJ (10 <-6 > J-10 <-3 > J), so that low jitter and large energy output of laser pulses and trigger signals are realized, and application development of high-precision laser ranging, laser communication, time-frequency transmission and the like is effectively promoted.

The invention provides a state-adjustable double-gain optical structure on a silicon substrate and a laser radar system, and relates to the technical field of laser radars. The adjustable double-gain optical structure on the silicon substrate comprises a first reflection type semiconductor optical amplifier, a second reflection type semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port. A reflected light electric field and a transmission light electric field are adjusted by adjusting the phase difference between the two reflection type semiconductor optical amplifiers. A laser radar system is formed by a plurality of state-adjustable double-gain optical structures on a silicon substrate, a transmitting optical phased array, a receiving optical phased array, a balanced photoelectric detector and the like, the transmitting power of the transmitting optical phased array is flexibly adjusted, meanwhile, a plurality of reflection type semiconductor optical amplifiers are adopted, the laser radar power is remarkably improved, and the laser radar system is suitable for large-scale popularization and application. And long-distance detection of the laser radar system based on the optical phased array is realized.

The embodiment of the application provides an optical amplifier, an optical assembly, an optical module, an optical communication network system and a detection device, relates to the technical field of semiconductors, and is used for solving the problem of one-way light emission of the optical amplifier. The optical amplifier comprises a waveguide and a photonic crystal. The waveguide comprises a core region and a cladding region arranged at the periphery of the core region. The waveguide further comprises an incident light side, a first light emission side and a second light emission side. The photonic crystal is arranged in the cladding region of the waveguide. The core region is located between the incident light side and the first light emission side, and the photonic crystal is located between the second light emission side and the core region. The photonic crystal is used for receiving incident light from the incident light side and emitting first emitted light and second emitted light. The first emitted light is emitted from the first light emission side, and the second emitted light is emitted from the second light emission side.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

A semiconductor optical amplifier array device includes: a substrate; and a plurality of semiconductor optical amplifiers formed on the substrate, each of the semiconductor optical amplifiers including an active region, and two input-output ports optically connected to the active region and disposed on same facet of the semiconductor optical amplifier array device. The plurality of semiconductor optical amplifiers include a first semiconductor optical amplifier in which length of the active region is equal to a first length, and a second semiconductor optical amplifier in which length of the active region is equal to a second length that is different from the first length.

Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions having normalized output power. The device and systems disclosed herein include an interferometer comprising a first branch formed of a first waveguide and a second branch formed of a second waveguide. A resonator cavity is coupled to the second first waveguide and at least one phase-shift mechanism is coupled to one of the second waveguide and the resonator cavity. The at least one phase-shift mechanism is configured to control biases of the interferometer to achieve a desired activation function at an output of the interferometer, and an optical amplification mechanism is coupled to the output of the interferometer and configured to add optical gain to the desired activation function.

A tunable laser includes: a channel selection assembly, a plurality of optical amplifiers, a micro-ring filtering assembly and a reflection assembly. The micro-ring filtering assembly is coupled to the reflection assembly, and operation wavelength ranges of the respective optical amplifiers are different. The channel selection assembly is used for selecting any optical amplifier to input a gain optical signal to the micro-ring filtering assembly. The micro-ring filtering assembly is used for filtering the gain optical signal under a vernier caliper effect to obtain filtered optical signals, and then inputting same into the reflection assembly. The reflection assembly is used for outputting some of the filtered optical signal outwards, and reflecting, after the remaining optical signals pass through the micro-ring filtering assembly, the remaining optical signals to an optical amplifier currently selected by the channel selection assembly.

The invention relates to the technical field of optical communication, and provides a laser chip which comprises an electro-absorption modulator and a semiconductor optical amplifier and further comprises a reflection grating used for reflecting spontaneous radiation light of the reflection semiconductor optical amplifier, the semiconductor optical amplifier is arranged on the light outlet side of the electro-absorption modulator, and the reflection grating is used for reflecting the spontaneous radiation light of the reflection semiconductor optical amplifier. The reflection grating is arranged in the area where the semiconductor optical amplifier is located, and the reflection grating is arranged close to the area where the electro-absorption modulator is located. The invention also provides a preparation method of the laser chip. By arranging the reflection grating, spontaneous radiation light of the semiconductor optical amplifier can be reflected, light crosstalk is reduced, and signal quality is improved.

Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

An amplifier operable with an electric drive signal can amplify signal light having a signal wavelength. A laser diode has an active section with input and output facets. The facets are in optical communication with the signal light and are configured to pass the signal light through the laser diode. The active section is configured to generate pump light in response to injection of the electrical drive signal into the active section. The pump light has a pump wavelength different from the signal wavelength. A doped fiber doped with an active dopant is in optical communication with the signal light and is in optical communication with at least a portion of the pump light from the laser diode. The pump wavelength of the pump light is configured to interact with the active dopant of the fiber and thereby amplify the signal light.

Provided are arrangements of optical elements that combine the features of a high power, compact laser that exhibits narrow linewidth output and that does not appreciably shift in wavelength or vary in power over a wide range of temperatures. Such arrangements include a transmission filter and a Bragg reflector that select out the wavelength for which the output power of a reflective semiconductor optical amplifier (RSOA) is least affected by changes in temperature over a temperature range of interest. Such arrangements may also utilize temperature-insensitive materials.

The invention relates to the technical field of semiconductor laser control, and discloses a laser stable power control device for an array atom magnetometer and a control method of the laser stable power control device. The laser light splitting optical path is arranged at the output end of the amplification laser; the double-ring active anti-interference stable power control board card is connected with a photoelectric detector in the laser light splitting light path, and the double-ring active anti-interference stable power control board card is used for receiving a light power signal of the measuring light provided by the laser light splitting light path so as to obtain the magnitude of compensation current needed by an amplification laser; the digital laser controller is used for injecting current into the amplification laser and controlling the temperature of the amplification laser; the beam splitter is connected with one end, far away from the amplification laser, of the laser splitting light path; and the array type atom magnetometer is used for carrying out array type measurement on a space magnetic field. The power stability of the amplification laser is improved.

Provided is an optical device having a long lifetime and high reliability. An optical device according to one embodiment comprises at least one Mach-Zehnder (MZ) modulator and a redundant semiconductor optical amplifier (SOA). The redundant SOA is connected to at least one MZ modulator via a 2-input 2-output coupler. The redundant SOA includes two SOAs arranged in parallel, and the two SOAs are arranged in two waveguides connected to the 2-input 2-output coupler, respectively. The redundant SOA is configured to switch the two SOAs to amplify light modulated by the at least one MZ modulator or light obtained before modulation.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

Laser circuits are disclosed herein that include, in one example, a proxy laser drive cell and a proxy comparator circuit for deriving a laser driver bias control using one or more constant current supplies. Comparator circuits are disclosed that are adapted to generate an output based on a proxy voltage having first and second voltage components wherein one of the voltage components is developed based on one or more constant current supplies indicative of laser control current.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.

An optical device includes a generator, a light emitter, a modulator, an optical amplifier, a current source, a storage, and a controller. The generator generates an electric signal of a multilevel amplitude modulation method. The light emitter emits laser light. The modulator modulates the laser light using the electric signal and outputs an optical signal. The optical amplifier optically amplifies the modulated optical signal according to a drive current. The current source adjusts the drive current to be supplied to the optical amplifier. The storage previously stores an information with respect to input-output characteristics of the optical signal in the optical amplifier relative to drive current value of the drive current. The controller acquires, from the storage, the input-output characteristics corresponding to the drive current value of the drive current supplied to the optical amplifier and controls the electric signal based on the acquired input-output characteristics.

The present invention provides a laser device (1A), which comprises: a semiconductor laser element (5); a waveform operation unit (3) that operates input waveform data (Da); a drive circuit (4) that supplies a drive current (Id) having a time waveform corresponding to the input waveform data (Da) to the semiconductor laser element (5); an optical amplifier (7) that amplifies the laser light (La) output from the semiconductor laser element (5); and an optical waveform detection unit (10) that detects the waveform of the amplified laser light (Lb) output from the optical amplifier (7). The waveform operation unit (3) compares the waveform of the amplified laser light (Lb) detected by the optical waveform detection unit (10) with a target waveform, and adjusts the time waveform of the input waveform data (Da) so that the waveform of the amplified laser light (Lb) approaches the target waveform. Thus, a laser device and a laser waveform control method that can reduce the size of the device can be realized.

The application discloses a monolithic hetero-integrated optical parametric amplification chip, which comprises a substrate, a lower cladding layer, a lithium niobate thin film flat optical waveguide, an optical parametric amplification transmission light path layer, an upper cladding layer and a pump laser epitaxial layer, wherein the optical parametric amplification transmission light path layer comprises a pump light coupling optical waveguide, a pump light transmission optical waveguide, a signal light input mode spot converter, a signal light transmission optical waveguide, a pump light signal light coupler, a periodical polarization lithium niobate thin film optical waveguide, a signal light demultiplexer and a signal light output mode spot converter. The application can realize amplification of input signal light on a single chip, and has the advantages of high integration, low noise, high gain and low insertion loss.

A semiconductor optical amplifier having a III-V semiconductor structure above a silicon structure. The III-V semiconductor structure forms a p-i-n junction with a first portion having a first width and a second portion having a wider second width. The silicon structure includes a silicon waveguide optically coupled to the III-V semiconductor structure and having a central silicon rib extending between two wide trenches. The central silicon rib includes a first tapered portion located under the first portion of the III-V semiconductor structure, the first tapered portion decreasing in width as the first tapered portion extends in a longitudinal direction, and a second tapered portion located under the second portion of the III-V semiconductor structure, the second tapered portion increasing in width as the second tapered portion extends in the longitudinal direction.

An optical device includes: a multi-mode interference waveguide that includes a first end portion in a first direction and a second end portion in opposite direction to the first direction; a first port that is arranged in the first end portion; a second port that is arranged in the first end portion; a third port that is arranged in the second end portion and that is positioned at a center of the second end portion in the second direction; and two fourth ports that are arranged in the second end portion and that are positioned on both sides of the third port in the second direction.

In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.

To provide a photo detecting and distance measuring apparatus for autonomous vehicle.SOLUTION: A LIDAR device comprises: a first wafer layer (130); a laser assembly (110) arranged on the first wafer layer; a capping layer (111) coupled to the first wafer layer and configured to seal the laser assembly; a second wafer layer (160) at least partially coupled to the first wafer layer; and a photonic integrated circuit (PIC) (150) formed on the second wafer layer, the second wafer including an outlet feature part (169) configured to outcouple a laser beam from the laser assembly.SELECTED DRAWING: Figure 1a

A device includes: a mesa stripe structure comprising a semiconductor in a stripe shape extending in a first direction, with first and second portions spaced apart in the first direction, and a third portion between the first and second portions; and an electrode pattern including a first electrode overlapping with the first portion but not overlapping with the second portion, and a second electrode overlapping with the second portion but not overlapping with the first portion. The first and second electrodes are separated. The electrode pattern comprises a metal in a shape of not overlapping with the third portion. The electrode pattern includes an adjacent area not overlapping with the mesa stripe structure. The adjacent area is next to the third portion in a second direction orthogonal to the first direction, and is on a semiconductor layer continuous to the mesa stripe structure.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

A wavelength-tunable laser includes a substrate, a waveguide layer over the substrate, and a cladding over the waveguide layer. The wavelength-tunable laser further includes an active layer in a part of the waveguide layer, and a tunable wavelength filter in at least one end region of the waveguide layer in a direction along which light is to be guided.

An integrated optoelectronic device D wherein a SOA and PIN are integrated on the same semi-insulating wafer in order to reach high frequency, and wherein the manufacture of such a device is based on a one-step process of making a semi-insulating buried heterostructure (SIBH) where the p and n contacts are at the same level on the same wafer face and can be easily soldered to the package of the flip-chip package.