148results about "Semiconductor amplifier structure" patented technology

Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.

An optical device includes a generator, a light emitter, a modulator, an optical amplifier, a current source, a storage, and a controller. The generator generates an electric signal of a multilevel amplitude modulation method. The light emitter emits laser light. The modulator modulates the laser light using the electric signal and outputs an optical signal. The optical amplifier optically amplifies the modulated optical signal according to a drive current. The current source adjusts the drive current to be supplied to the optical amplifier. The storage previously stores an information with respect to input-output characteristics of the optical signal in the optical amplifier relative to drive current value of the drive current. The controller acquires, from the storage, the input-output characteristics corresponding to the drive current value of the drive current supplied to the optical amplifier and controls the electric signal based on the acquired input-output characteristics.

An optical device includes: a multi-mode interference waveguide that includes a first end portion in a first direction and a second end portion in opposite direction to the first direction; a first port that is arranged in the first end portion; a second port that is arranged in the first end portion; a third port that is arranged in the second end portion and that is positioned at a center of the second end portion in the second direction; and two fourth ports that are arranged in the second end portion and that are positioned on both sides of the third port in the second direction.

In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.

A device includes: a mesa stripe structure comprising a semiconductor in a stripe shape extending in a first direction, with first and second portions spaced apart in the first direction, and a third portion between the first and second portions; and an electrode pattern including a first electrode overlapping with the first portion but not overlapping with the second portion, and a second electrode overlapping with the second portion but not overlapping with the first portion. The first and second electrodes are separated. The electrode pattern comprises a metal in a shape of not overlapping with the third portion. The electrode pattern includes an adjacent area not overlapping with the mesa stripe structure. The adjacent area is next to the third portion in a second direction orthogonal to the first direction, and is on a semiconductor layer continuous to the mesa stripe structure.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

A method and apparatus for controlling a stimulus source to send photons toward pixels in a pixel array included in a detector system, analyzing the response of the pixels in the pixel array, and generating an alert based on the response of the pixels in the pixel array. Exemplary stimulus sources include conductive traces, PN junctions, and current sources.

A method of Selective Area Epitaxy (SAE) on a semiconductor wafer is disclosed. A dielectric mask is deposited on the wafer surface to define an opening for epitaxial growth. The mask includes a zigzag edge formed by successive straight facets oriented to avoid crystallographic directions associated with unintentional growth enhancement. During SAE, a semiconductor layer is grown in the opening such that edge-growth enhancement at the zigzag edge is suppressed relative to straight edges aligned with [011] or [0 11] directions. By replacing straight mask edges with zigzag geometry, fragile linear overgrowth is avoided, reducing particulate contamination and improving device reliability. The zigzag edge may be tailored by pitch, amplitude, or facet orientation, including angles such as 34°, 56°, 124°, or 146° relative to [011]. The method is applicable to III-V materials, including InP-based photonic integrated circuits, lasers, modulators, and amplifiers.

To provide a new and improved optical module that can reduce problems that occur in configurations where optical semiconductor elements are flip-chip mounted to a substrate.SOLUTION: An optical module includes, for example, a substrate and an optical semiconductor element flip-chip mounted on the substrate, and the substrate is provided with an opening that passes through the substrate in the thickness direction at least at a position overlapping with the optical semiconductor element. The opening may be a notch provided in the edge of the substrate. The optical semiconductor element may be provided with an alignment marker that is visible through an opening from the opposite side of the substrate from the optical semiconductor element and is used for alignment with a component other than the optical semiconductor element. Further, the optical semiconductor element may output or receive light in a direction along the surface of the substrate on which the optical semiconductor element is mounted.SELECTED DRAWING: Figure 2

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

This invention provides a tunable laser capable of suppressing mode hopping. [Solution] A tunable laser comprising: gain regions and wavelength control regions arranged alternately along the direction of light propagation; diffraction gratings arranged corresponding to the gain regions and the wavelength control regions, respectively; and a plurality of regions without diffraction gratings located at the boundary between the gain regions and the wavelength control regions, at least one of the ends of the gain regions and the ends of the wavelength control regions, wherein the length of the regions without diffraction gratings is 5% or more and 30% or less of the length of the gain region or the wavelength control region to which it belongs.

A light source includes a seed light source and a booster amplifier. The seed light source outputs incoherent seed light having a predetermined bandwidth. The booster amplifier serves as a semiconductor optical amplifier that optically amplifies the seed light entered through a first end facet and outputs the amplified light through a second end facet. The booster amplifier has nL being set, which is the product of a refractive index n and a chip length L, so that relative intensity noise (RIN) and ripple are simultaneously suppressed in the amplified light.

The application discloses an integration method of a lithium niobate-indium phosphide photoelectric integrated device based on a diamond substrate, which directly bonds a polycrystalline diamond substrate with the integrated chip, effectively improves the heat dissipation effect without affecting the original device performance, and solves the heat mismatch problem of lithium niobate, indium phosphide and other materials in the hetero-integration, and the whole preparation process is completed under low-temperature conditions, a heat mismatch balance temporary adhesive layer is introduced, and a low-temperature and long-time annealing treatment is combined, so that the bonding strength is improved, the interface thermal resistance is reduced, and the damage of the thin film material caused by the heat mismatch is reduced or eliminated; the method does not introduce more processes or complex designs except the bonding process, helps to ensure the process consistency, and realizes the transfer of the multi-layer hetero-wafer material and the prepared device layer.

Provided is an integrated beam steering device. The steering device includes a substrate, a core layer provided on the substrate, a clad layer on the core layer, a plurality of upper electrodes provided on the clad layer, and a lower electrode provided on a lower surface of the substrate. Here, the substrate includes a source region configured to generate laser beam, a distribution region configured to transmit the laser beam, an amplification region configured to amplify the laser beam, a phase modulation region configured to modulate the phase of the laser beam, and a first intensity modulation region configured to modulate the intensity of the laser beam.

Provided is an optical transmitter having high manufacturing stability and a high reflection suppression effect. In the optical transmitter, a distributed feedback (DFB) laser having an active region formed as a multiple quantum well that generates an optical gain by current injection and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a multiple quantum well having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction by an angle θwg, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser are monolithically integrated on one substrate. The passive waveguide has a tapered region and a narrow waveguide region. The tapered region converts a width W1 of the passive waveguide connected to the SOA into a width W2 of the narrow waveguide region, and the passive waveguide forms the angle θwg with respect to a normal line to an end surface of the substrate and is in contact with the end surface of the substrate.

The invention discloses a hybrid integrated external cavity frequency modulation continuous wave laser. The laser is formed by hybrid integration of a gain chip and a silicon optical chip. An on-chip filter device, an on-chip wavelength locking device, an on-chip frequency selection device and an on-chip light splitting device are integrated on the silicon optical chip; the on-chip filter device is composed of an outer cavity phase region and a micro-ring resonance device. The micro-ring resonance device is composed of two or more micro-rings with slightly different perimeters. The outer cavity phase region and each micro-ring are provided with two groups of heaters for phase change, and one group of heaters in the outer cavity phase region and each micro-ring is used for adjusting the bias of each device; and the other group of heaters are connected in series or in parallel through on-chip electric connecting wires, and a frequency sweeping signal is applied to realize frequency sweeping of the laser. One heater for laser cavity phase adjustment and one heater corresponding to filter adjustment are connected in series or in parallel, synchronous change of a laser cavity mode and a filter spectrum is achieved, the frequency sweeping range of the laser is expanded, and it is guaranteed that the laser can be basically unchanged during frequency sweeping.

An optical module includes a circuit board and a light receiving assembly. The light receiving assembly is electrically connected to the circuit board and configured to receive optical signals from outside of the optical module. The light receiving assembly includes a light receiving cavity, an optical amplification assembly and a light receiving chip. The optical amplification assembly is disposed in the light receiving cavity and configured to amplify the optical signals. The optical amplification assembly includes a fourth substrate and a semiconductor optical amplifier (SOA). The fourth substrate is electrically connected to the circuit board, and the SOA is disposed on the fourth substrate and is electrically connected to the fourth substrate, The light receiving chip is disposed in the light receiving cavity and configured to receive the amplified optical signals.

To provide an optical integrated laser element capable of reducing the occurrence of a mode hop while increasing the intensity of an output laser beam.SOLUTION: The optical integrated laser element includes a distributed feedback laser part, a semiconductor optical amplification part, and a high reflection film. The distributed feedback laser portion includes a diffraction grating and a first optical waveguide. The first optical waveguide is provided along the diffraction grating and has a gain. The semiconductor optical amplifier unit is provided on the substrate, is provided on a first side of the distributed-feedback laser unit, is optically connected to the first optical waveguide, has a gain, and includes a second optical waveguide having a width wider than a width of the first optical waveguide. The high reflection film is provided on an end surface on a second side opposite to the first side of the distributed feedback laser portion. The distributed feedback laser portion and the semiconductor optical amplification portion are integrated on the substrate. The length of the first optical waveguide in the optical waveguide direction is 1000 μm or less, and the length of the second optical waveguide in the optical waveguide direction is 1.5 times or more and 7 times or less the length of the first optical waveguide in the optical waveguide direction.SELECTED DRAWING: Figure 1

A tunable ring laser having a ring cavity, the ring cavity comprising: a tunable ring resonator; a phase modulator; an optical coupler, wherein the optical coupler is optically connected with the tunable ring resonator; and a reflector arranged to couple a first propagation mode with a second propagation mode, the second propagation mode being opposite the first propagation mode.

The present invention concerns an optoelectronic device D such as a Semiconductor optical amplifier (SOA) working in a continuous wave condition and able to amplify high frequencies optical signals. The optoelectronic device D comprise an active zone I (such as SOA) with a slab (3) in a direct bias working in a continuous wave and a taper zone (II) connected to the active zone (I).

An optical semiconductor device according to the present disclosure includes a semiconductor substrate, at least one semiconductor laser provided on the semiconductor substrate, an optical multiplexer / demultiplexer circuit provided on the semiconductor substrate, multiplexing or demultiplexing first output light of the semiconductor laser and outputting second output light and third output light, a first waveguide portion provided on the semiconductor substrate, and outputting the second output light from an end face of the semiconductor substrate, and a second waveguide portion including an optical amplifier amplifying the third output light and a reflecting portion and provided on the semiconductor substrate, wherein the reflecting portion includes a diffraction grating that reflects the third output light amplified by the optical amplifier to feed back to the semiconductor laser via the optical amplifier and the optical multiplexer / demultiplexer circuit, and the semiconductor laser and the reflecting portion form a resonator.

The present invention relates to an integrated optical transmission circuit (1), wherein the transmission wavelength (L bragg A laser source (LS) for generating light emission having a grating that defines a first photoluminescence wavelength (L1) and a first amplification medium (A1) having a first photoluminescence wavelength (L1), and a second photoluminescence wavelength (L gain The present invention relates to an integrated optical transmission circuit (1) comprising a semiconductor optical amplifier (SOA) including a second amplification medium (A2) having ), and a laser source (LS) and an optical amplifier (SOA), at a first temperature (T0), the transmission wavelength (L bragg ) is the second photoluminescence wavelength (L gain The first photoluminescence wavelength (L1) is closer than the second temperature (T1), and the transmission wavelength (L bragg ) is greater than the second photoluminescence wavelength (L1) gain It is structured to be similar to ).

An apparatus comprises: an input port configured to receive an optical wave; a plurality of optical amplification modules (OAMs), each configured to apply a gain to an optical wave; a plurality of optical power splitting modules (OPSMs), each configured to provide portions of an optical wave to two or more outputs according to an optical power splitting ratio; and a plurality of optical ports, each configured to provide an optical wave; wherein the plurality of OPSMs is interconnected in a tree network that comprises: a root stage comprising a path segment between the input port and a first OPSM, a final stage comprising a plurality of path segments between OPSMs and optical ports, and a plurality of inner stages, each comprising a plurality of path segments between an upstream and a downstream OPSM; and wherein at least two inner stages each include an OAM on one or more path segments.

The application discloses a kind of light microwave source system and method, the system includes light signal generation module, for generating CPT phenomenon, output optical filtered laser beam;Photodetector, for converting optical signal into electrical signal;Electric signal adjustment module, for amplifying the electrical signal output by photodetector, and carry out beam splitting;Crystal oscillator locking module, including crystal oscillator, for the second road signal after beam splitting is modulated and input to frequency divider, with the signal output by crystal oscillator after frequency division is phase detected and forms error check signal, crystal oscillator locking module generates the microwave signal of the microwave source system;PID control module, for processing error check signal, forms voltage control signal to control voltage control phase shifter.The application has the stability of CPT atomic clock and the advantage of low phase noise of photoelectric oscillator, improves the stability of microwave signal, can provide high-stability and low-phase-noise microwave and time frequency signal.

The application discloses a kind of directly modulated multi-section tunable laser, which is composed of multiple laser units in series, both ends of the tunable laser are coated with anti-reflection film, the front end of the first laser unit is integrated with an optical amplifier, the sampling grating periods of adjacent laser units are different, and the lasing wavelength difference is 2-5 nm;The laser unit includes: a laser light-emitting active gain region and a feedback compensation region arranged before and after the laser light-emitting active gain region, the laser light-emitting active gain region is inserted with an equivalent π phase shift sampling grating structure through the reconfiguration-equivalent chirp technology, and the feedback compensation region adopts a uniform sampling grating period, which is different from the sampling period of the sampling grating structure of the laser light-emitting active gain region.This tunable laser is beneficial to improve the modulation rate of the laser and the single-mode output characteristics of the laser, and simultaneously cascades multiple distributed feedback laser units to realize wavelength tuning coverage.

A light source unit (1) is provided with a semiconductor optical amplifier (10), a filter unit (30), a Michelson interferometer (40) and a detector (44). The Michelson interferometer (40) has: a coupler (41) which, with a predetermined branching ratio, branches light (L2) from a filter unit (30) inputted to a first port (41a) into a first waveguide (51) connected to a second port (41b) and a second waveguide (52) connected to a third port (41c) and having an optical path length different from that of the first waveguide (51); a first mirror (42) which returns, to the coupler, at least some of first branched light (Lb1) outputted from the second port (41b); and a second mirror (43) which returns, to the coupler, at least some of second branched light (Lb2) outputted from the third port. The detector (44) detects interference light among the light returned to the coupler (41) from the first mirror (42) and the second mirror (43). The branching ratio of the coupler (41) is set to an unequal ratio.

The invention relates to the technical field of optical amplification devices, and particularly discloses an on-chip integrated optical amplification device and a preparation method thereof, the device comprises a micro-ring resonant cavity based on an SOI wafer, a gain medium, an electric pumping structure, an optical coupling structure and a temperature control module; all the functional units are integrated on the same SOI wafer, so that miniaturization and high-density integration of the device structure are realized. The preparation method is based on a standard silicon process, and comprises the steps of manufacturing the resonant cavity and the heavily doped region on the top silicon, depositing the insulating layer, integrating the gain medium, finally forming metal electrode interconnection and the like. The micro-ring resonant cavity is used for enhancing the effect of light and the gain medium, the gain medium is efficiently pumped through the alternating electric field to achieve light amplification, stable performance is maintained by means of the built-in closed-loop temperature control system, and the micro-ring resonant cavity pump has the advantages of being compact in structure, high in integration level, high in pumping efficiency, low in power consumption, stable in work, good in compatibility with the CMOS technology and the like. The method is suitable for high-speed optical communication and photoelectric integrated systems.

The invention provides a semiconductor laser with an inclined cavity surface in a vertical plane and a manufacturing method. The semiconductor laser comprises a laminated structure; the main oscillator region, the power pre-amplifier region and the conical power amplifier region are sequentially integrated on the stacked structure in the extension direction of the axis of the waveguide optical path; the laminated structure is formed on the substrate; the substrate has a preset offset cutting angle, and the preset offset cutting angle is larger than or equal to 12 degrees and smaller than 17 degrees; wherein the semiconductor laser is provided with an output cavity surface formed by cleavage along the cleavage direction of the substrate at the output end of the conical power amplifier region, and the output cavity surface is obliquely arranged relative to the direction vertical to the axis of the waveguide light path in a vertical plane. The semiconductor laser effectively solves the technical problems of parasitic oscillation and light beam quality degradation induced by residual reflection of an output cavity surface of a monolithic integrated MOPA semiconductor laser in the prior art.