255results about "Semiconductor amplifier structure" patented technology

The invention discloses a method and a device for outputting large-energy picosecond pulse laser with external synchronization picosecond-level jitter. The device comprises a high-precision time sequence controller, a semiconductor picosecond pulse seed source, an optical isolator and a high-gain and high-stability regenerative amplifier. The semiconductor picosecond pulse seed source outputs low-energy picosecond-level (10-12J, pJ) and low-jitter picosecond-level (10-12s, ps) picosecond pulse seeds under the trigger of a time sequence controller of a high-precision external clock, the picosecond pulse seeds enter the high-gain high-stability regenerative amplifier through the optical isolator, and the high-gain high-stability regenerative amplifier outputs high-energy picosecond-level (10-12s, ps) picosecond pulse seeds under the control and adjustment of the high-precision time sequence controller. The picosecond pulse seed is locked to be regenerated and amplified in the regenerative amplifier, and the energy of the picosecond pulse seed with low energy and low jitter at a picofocus (pJ) level is amplified to uJ-mJ (10 <-6 > J-10 <-3 > J), so that low jitter and large energy output of laser pulses and trigger signals are realized, and application development of high-precision laser ranging, laser communication, time-frequency transmission and the like is effectively promoted.

The embodiment of the application provides an optical amplifier, an optical assembly, an optical module, an optical communication network system and a detection device, relates to the technical field of semiconductors, and is used for solving the problem of one-way light emission of the optical amplifier. The optical amplifier comprises a waveguide and a photonic crystal. The waveguide comprises a core region and a cladding region arranged at the periphery of the core region. The waveguide further comprises an incident light side, a first light emission side and a second light emission side. The photonic crystal is arranged in the cladding region of the waveguide. The core region is located between the incident light side and the first light emission side, and the photonic crystal is located between the second light emission side and the core region. The photonic crystal is used for receiving incident light from the incident light side and emitting first emitted light and second emitted light. The first emitted light is emitted from the first light emission side, and the second emitted light is emitted from the second light emission side.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

A semiconductor optical amplifier array device includes: a substrate; and a plurality of semiconductor optical amplifiers formed on the substrate, each of the semiconductor optical amplifiers including an active region, and two input-output ports optically connected to the active region and disposed on same facet of the semiconductor optical amplifier array device. The plurality of semiconductor optical amplifiers include a first semiconductor optical amplifier in which length of the active region is equal to a first length, and a second semiconductor optical amplifier in which length of the active region is equal to a second length that is different from the first length.

Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

The invention relates to the technical field of semiconductor laser control, and discloses a laser stable power control device for an array atom magnetometer and a control method of the laser stable power control device. The laser light splitting optical path is arranged at the output end of the amplification laser; the double-ring active anti-interference stable power control board card is connected with a photoelectric detector in the laser light splitting light path, and the double-ring active anti-interference stable power control board card is used for receiving a light power signal of the measuring light provided by the laser light splitting light path so as to obtain the magnitude of compensation current needed by an amplification laser; the digital laser controller is used for injecting current into the amplification laser and controlling the temperature of the amplification laser; the beam splitter is connected with one end, far away from the amplification laser, of the laser splitting light path; and the array type atom magnetometer is used for carrying out array type measurement on a space magnetic field. The power stability of the amplification laser is improved.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.

An optical device includes a generator, a light emitter, a modulator, an optical amplifier, a current source, a storage, and a controller. The generator generates an electric signal of a multilevel amplitude modulation method. The light emitter emits laser light. The modulator modulates the laser light using the electric signal and outputs an optical signal. The optical amplifier optically amplifies the modulated optical signal according to a drive current. The current source adjusts the drive current to be supplied to the optical amplifier. The storage previously stores an information with respect to input-output characteristics of the optical signal in the optical amplifier relative to drive current value of the drive current. The controller acquires, from the storage, the input-output characteristics corresponding to the drive current value of the drive current supplied to the optical amplifier and controls the electric signal based on the acquired input-output characteristics.

The application discloses a monolithic hetero-integrated optical parametric amplification chip, which comprises a substrate, a lower cladding layer, a lithium niobate thin film flat optical waveguide, an optical parametric amplification transmission light path layer, an upper cladding layer and a pump laser epitaxial layer, wherein the optical parametric amplification transmission light path layer comprises a pump light coupling optical waveguide, a pump light transmission optical waveguide, a signal light input mode spot converter, a signal light transmission optical waveguide, a pump light signal light coupler, a periodical polarization lithium niobate thin film optical waveguide, a signal light demultiplexer and a signal light output mode spot converter. The application can realize amplification of input signal light on a single chip, and has the advantages of high integration, low noise, high gain and low insertion loss.

A semiconductor optical amplifier having a III-V semiconductor structure above a silicon structure. The III-V semiconductor structure forms a p-i-n junction with a first portion having a first width and a second portion having a wider second width. The silicon structure includes a silicon waveguide optically coupled to the III-V semiconductor structure and having a central silicon rib extending between two wide trenches. The central silicon rib includes a first tapered portion located under the first portion of the III-V semiconductor structure, the first tapered portion decreasing in width as the first tapered portion extends in a longitudinal direction, and a second tapered portion located under the second portion of the III-V semiconductor structure, the second tapered portion increasing in width as the second tapered portion extends in the longitudinal direction.

An optical device includes: a multi-mode interference waveguide that includes a first end portion in a first direction and a second end portion in opposite direction to the first direction; a first port that is arranged in the first end portion; a second port that is arranged in the first end portion; a third port that is arranged in the second end portion and that is positioned at a center of the second end portion in the second direction; and two fourth ports that are arranged in the second end portion and that are positioned on both sides of the third port in the second direction.

In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.

A device includes: a mesa stripe structure comprising a semiconductor in a stripe shape extending in a first direction, with first and second portions spaced apart in the first direction, and a third portion between the first and second portions; and an electrode pattern including a first electrode overlapping with the first portion but not overlapping with the second portion, and a second electrode overlapping with the second portion but not overlapping with the first portion. The first and second electrodes are separated. The electrode pattern comprises a metal in a shape of not overlapping with the third portion. The electrode pattern includes an adjacent area not overlapping with the mesa stripe structure. The adjacent area is next to the third portion in a second direction orthogonal to the first direction, and is on a semiconductor layer continuous to the mesa stripe structure.

A semiconductor optical device includes n-doped, p-doped, and active layers, an optical waveguide structure, and drive current structure(s). The waveguide structure defines optical mode(s); the drive current structure defines a drive current path. One or both of those structures are arranged to result in a selected (or maximized) degree of overlap between lateral profiles of current density and optical intensity. The optical device can be arranged as a diode laser or optical amplifier.

A wavelength-tunable laser includes a substrate, a waveguide layer over the substrate, and a cladding over the waveguide layer. The wavelength-tunable laser further includes an active layer in a part of the waveguide layer, and a tunable wavelength filter in at least one end region of the waveguide layer in a direction along which light is to be guided.

An integrated optoelectronic device D wherein a SOA and PIN are integrated on the same semi-insulating wafer in order to reach high frequency, and wherein the manufacture of such a device is based on a one-step process of making a semi-insulating buried heterostructure (SIBH) where the p and n contacts are at the same level on the same wafer face and can be easily soldered to the package of the flip-chip package.

A method and apparatus for controlling a stimulus source to send photons toward pixels in a pixel array included in a detector system, analyzing the response of the pixels in the pixel array, and generating an alert based on the response of the pixels in the pixel array. Exemplary stimulus sources include conductive traces, PN junctions, and current sources.

A method of Selective Area Epitaxy (SAE) on a semiconductor wafer is disclosed. A dielectric mask is deposited on the wafer surface to define an opening for epitaxial growth. The mask includes a zigzag edge formed by successive straight facets oriented to avoid crystallographic directions associated with unintentional growth enhancement. During SAE, a semiconductor layer is grown in the opening such that edge-growth enhancement at the zigzag edge is suppressed relative to straight edges aligned with [011] or [0 11] directions. By replacing straight mask edges with zigzag geometry, fragile linear overgrowth is avoided, reducing particulate contamination and improving device reliability. The zigzag edge may be tailored by pitch, amplitude, or facet orientation, including angles such as 34°, 56°, 124°, or 146° relative to [011]. The method is applicable to III-V materials, including InP-based photonic integrated circuits, lasers, modulators, and amplifiers.

A disclosed laser device includes a laser diode configured to output laser light with a variable pulse pattern, a pre-amp optical unit configured to amplify the laser light output from the laser diode to a first energy level and includes a plurality of Pockels cells and a first amplifier, a second amplifier configured to amplify the laser light amplified to the first energy level to a second energy level, a third amplifier configured to amplify the laser light amplified to the second energy level to a third energy level, and a control unit configured to set a pulse pattern of the laser light output from the laser diode and control a driver of the laser diode, the first amplifier, the second amplifier, and the third amplifier based on the pulse pattern.

A linear tunable laser comprising: a first tunable resonator, a second tunable resonator, an interferometer, an optical amplifier, and a power splitter. The first tunable resonator comprises a waveguide. The interferometer comprises a plurality of waveguides. At least one of the waveguides of the interferometer is optically connected to the first tunable resonator. The optical amplifier is optically connected to the interferometer. The second tunable resonator comprises a waveguide optically that is connected to the optical amplifier. The power splitter is for outputting light from the linear tunable laser.

This application relates to thin-film filters for tunable lasers. A thin-film device for a wavelength-tunable semiconductor laser is also provided. The device includes a cavity located between a high-reflectivity surface and an anti-reflectivity surface, the cavity being designed to emit laser light with wavelengths within a tunable range defined by two vernier ring resonators having a joint free spectral range between a first wavelength and a second wavelength. The device also includes a film comprising multiple pairs of first and second layers, the first and second layers being stacked sequentially on the outer side of the high-reflectivity surface. Each layer in each pair has a respective optical thickness of one unit, except for one of the first or second layers in a pair having a larger optical thickness. The film is configured to produce an internal reflectivity of at least greater than 90% of the laser light from the high-reflectivity surface for wavelengths within the tunable range starting from the first wavelength, but for wavelengths within a 25 nm range surrounding the second wavelength, the internal reflectivity of the laser light is at least less than 50%.

Silicon photonics adds optical functionality to electronic integrated circuits allowing leveraging CMOS fabrication processes, integration of CMOS electronics discretely and integration of microelectromechanical systems (MEMS) or Micro-Opto-Electro-Mechanical-Systems (MOEMS) elements. Further, silicon photonics allows hybrid or monolithic integration of semiconductor photodetectors in conjunction with the passive silicon photonics and active elements such as semiconductor optical amplifiers (SOAs). Accordingly, it would be beneficial to provide network designers with silicon photonic optical emitters and transmitters for wavelength division multiplexed networks which can dynamically transmit on one or more channels whilst addressing the inherent issues that silicon photonics and other optical waveguide technologies exhibit for hybrid integration of SOAs and passive photonics.

To provide a new and improved optical module that can reduce problems that occur in configurations where optical semiconductor elements are flip-chip mounted to a substrate.SOLUTION: An optical module includes, for example, a substrate and an optical semiconductor element flip-chip mounted on the substrate, and the substrate is provided with an opening that passes through the substrate in the thickness direction at least at a position overlapping with the optical semiconductor element. The opening may be a notch provided in the edge of the substrate. The optical semiconductor element may be provided with an alignment marker that is visible through an opening from the opposite side of the substrate from the optical semiconductor element and is used for alignment with a component other than the optical semiconductor element. Further, the optical semiconductor element may output or receive light in a direction along the surface of the substrate on which the optical semiconductor element is mounted.SELECTED DRAWING: Figure 2

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

This invention provides a tunable laser capable of suppressing mode hopping. [Solution] A tunable laser comprising: gain regions and wavelength control regions arranged alternately along the direction of light propagation; diffraction gratings arranged corresponding to the gain regions and the wavelength control regions, respectively; and a plurality of regions without diffraction gratings located at the boundary between the gain regions and the wavelength control regions, at least one of the ends of the gain regions and the ends of the wavelength control regions, wherein the length of the regions without diffraction gratings is 5% or more and 30% or less of the length of the gain region or the wavelength control region to which it belongs.

To provide an optical device and the like that can evaluate a semiconductor optical amplifier (SOA).SOLUTION: An optical device has an optical coupler for inputting an optical signal from a light source, a semiconductor optical amplifier for amplifying the optical signal from the optical coupler, and a light receiving element for receiving spontaneous emission light from the semiconductor optical amplifier. The optical coupler has a first input port for inputting the optical signal from the light source, a second input port which is connected to an input stage of the light receiving element, and which is different from the first input port, and an output port connected to an input stage of the semiconductor optical amplifier and outputting the optical signal from the first input port to the semiconductor optical amplifier. The light receiving element receives the spontaneous emission light from the semiconductor optical amplifier via the output port and the second input port.SELECTED DRAWING: Figure 3

A light source includes a seed light source and a booster amplifier. The seed light source outputs incoherent seed light having a predetermined bandwidth. The booster amplifier serves as a semiconductor optical amplifier that optically amplifies the seed light entered through a first end facet and outputs the amplified light through a second end facet. The booster amplifier has nL being set, which is the product of a refractive index n and a chip length L, so that relative intensity noise (RIN) and ripple are simultaneously suppressed in the amplified light.