480results about "Semiconductor amplifier structure" patented technology

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000 / mm2.

In one embodiment, a system includes a pump light source configured to produce a pump beam of light at a pump frequency and a Stokes light source configured to produce a Stokes beam of light at a Stokes frequency, where the pump and Stokes frequencies are offset by a frequency offset Ω. The system further includes a photonic integrated circuit (PIC) that includes multiple optical waveguides configured to: direct the pump and Stokes beams of light to a sample; receive a Raman signal produced by coherent Raman scattering of the pump and Stokes beams of light at the sample; and direct the Raman signal to an optical receiver. The optical receiver is configured to detect the Raman signal. The optical receiver includes a probe light source configured to produce a probe beam of light at a probe frequency, an optical detector, and an electronic circuit.

A device, and method of operating the device, are disclosed. The device includes: a heat spreader having a first side and a second side opposite the first side, the heat spreader including at least one oscillating heat pipe arranged between the first side and the second side, at least one of the at least one oscillating heat pipe including a plurality of interconnected channels including a working fluid; at least one optoelectronic component coupled to the first side of the heat spreader; and at least one thermoelectric cooler, wherein a cold side of the at least one thermoelectric cooler is coupled to the second side of the heat spreader. The heat spreader may include one or more heat exchange features.

A semiconductor optical amplifier (SOA) with a variable optical confinement factor I′ along the length of the device is disclosed. At the input end of the SOA, the optical confinement is high as an optical core is adjacent an optical gain layer, resulting in a high-gain region that rapidly increases the optical signal power. In the central portion of the SOA, the optical confinement is continuously reduced as the optical core is tapered away from the optical gain layer, thereby lowering the gain, but increasing the output saturation power. Near the output end of the SOA, the optical confinement factor is held constant, providing a length of additional gain, thereby further increasing the output power. The SOA may optionally include a spot-size converter region to focus the output optical signal.

A semiconductor optical integrated element (11) according to the present invention comprises a DFB laser (12), an EA modulator (13), a bent waveguide (162), and an SOA (14) in the stated order on a substrate and further comprises an optical monitor (15) which is disposed on substantially the same axis as an optical axis (18) of emitted light of the DFB laser and into which leakage light from the bent waveguide enters. Also, a region (125) not including a diffraction grating may be disposed in a vicinity of one end of the DFB laser.　The present invention can thereby provide a semiconductor optical integrated element capable of suppressing degradation of integrated elements and controlling the integrated elements.

The invention discloses a method and a device for outputting large-energy picosecond pulse laser with external synchronization picosecond-level jitter. The device comprises a high-precision time sequence controller, a semiconductor picosecond pulse seed source, an optical isolator and a high-gain and high-stability regenerative amplifier. The semiconductor picosecond pulse seed source outputs low-energy picosecond-level (10-12J, pJ) and low-jitter picosecond-level (10-12s, ps) picosecond pulse seeds under the trigger of a time sequence controller of a high-precision external clock, the picosecond pulse seeds enter the high-gain high-stability regenerative amplifier through the optical isolator, and the high-gain high-stability regenerative amplifier outputs high-energy picosecond-level (10-12s, ps) picosecond pulse seeds under the control and adjustment of the high-precision time sequence controller. The picosecond pulse seed is locked to be regenerated and amplified in the regenerative amplifier, and the energy of the picosecond pulse seed with low energy and low jitter at a picofocus (pJ) level is amplified to uJ-mJ (10 <-6 > J-10 <-3 > J), so that low jitter and large energy output of laser pulses and trigger signals are realized, and application development of high-precision laser ranging, laser communication, time-frequency transmission and the like is effectively promoted.

Provided is an optical transmitter having high manufacturing stability and a high reflection suppression effect. In the optical transmitter, a distributed feedback (DFB) laser having an active region formed as a multiple quantum well that generates an optical gain by current injection and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a multiple quantum well having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction by an angle θwg, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser are monolithically integrated on one substrate. The passive waveguide has a tapered region and a narrow waveguide region. The tapered region converts a width W1 of the passive waveguide connected to the SOA into a width W2 of the narrow waveguide region, and the passive waveguide forms the angle θwg with respect to a normal line to an end surface of the substrate and is in contact with the end surface of the substrate.

In an EADFB laser with an integrated SOA, a new configuration in which deterioration of optical waveform quality is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and the manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a carrier density is optimized depending on a light intensity inside the SOA and an amount of carrier consumption. The SOA is electrically separated into a plurality of regions, and a current is injected into each region independently. The divided SOA region is configured so that a length of the SOA region becomes shorter as a region is farther from an incidence end of the SOA. Further, for the divided SOA, an amount of carrier consumption increases as the SOA region is farther from the incidence end, so that a current injection amount is increased.

The invention relates to a vertical cavity semiconductor optical amplifier and a use method thereof, and belongs to the technical field of semiconductor optical amplifiers, the vertical cavity semiconductor optical amplifier sequentially comprises an N-surface electrode, an N-surface insulating layer, a substrate, an active region, a P-surface insulating layer and a P-surface electrode, the N-surface electrode and the P-surface electrode both comprise a cathode, an anode and a discharge cavity, the cathode discharges to break down discharge gas in the discharge cavity to generate the low-temperature plasma electrode, a plurality of leakage holes are evenly distributed in the N-face insulating layer and the P-face insulating layer, the cathode and the anode are electrically connected with a discharge power source, and the N-face electrode and the P-face electrode are electrically connected with a driving power source. The technical problems that in the prior art, due to the current crowding effect, a vertical cavity semiconductor optical amplifier of an electric pump is limited in clear aperture, limited in amplification capacity and low in output power can be solved.

The invention provides a state-adjustable double-gain optical structure on a silicon substrate and a laser radar system, and relates to the technical field of laser radars. The adjustable double-gain optical structure on the silicon substrate comprises a first reflection type semiconductor optical amplifier, a second reflection type semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port. A reflected light electric field and a transmission light electric field are adjusted by adjusting the phase difference between the two reflection type semiconductor optical amplifiers. A laser radar system is formed by a plurality of state-adjustable double-gain optical structures on a silicon substrate, a transmitting optical phased array, a receiving optical phased array, a balanced photoelectric detector and the like, the transmitting power of the transmitting optical phased array is flexibly adjusted, meanwhile, a plurality of reflection type semiconductor optical amplifiers are adopted, the laser radar power is remarkably improved, and the laser radar system is suitable for large-scale popularization and application. And long-distance detection of the laser radar system based on the optical phased array is realized.

The embodiment of the application provides an optical amplifier, an optical assembly, an optical module, an optical communication network system and a detection device, relates to the technical field of semiconductors, and is used for solving the problem of one-way light emission of the optical amplifier. The optical amplifier comprises a waveguide and a photonic crystal. The waveguide comprises a core region and a cladding region arranged at the periphery of the core region. The waveguide further comprises an incident light side, a first light emission side and a second light emission side. The photonic crystal is arranged in the cladding region of the waveguide. The core region is located between the incident light side and the first light emission side, and the photonic crystal is located between the second light emission side and the core region. The photonic crystal is used for receiving incident light from the incident light side and emitting first emitted light and second emitted light. The first emitted light is emitted from the first light emission side, and the second emitted light is emitted from the second light emission side.

A light source generates a high brightness combined light beam by coherently combining a plurality of light beams generated or amplified by an optical array comprising a plurality flared optical gain regions. The plurality of light beams generated or amplified by the optical array can have a common wavelength and can be passively or actively phase locked and coherently combined to generate the combined light beam. The plurality of light beams generated or amplified by the optical array can have different wavelengths and can be spectrally combined to generate the high brightness light beam. The radiance of the high brightness light beam can be greater than the radiance of the individual light beams, and its beam quality can be close to the beam quality of the individual light beams.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

The utility model relates to the technical field of semiconductor optical amplifiers, in particular to a semiconductor optical amplification device. Comprising an optical splitter, a first semiconductor optical chip, a first reflector, a second reflector, a second semiconductor optical chip and a beam combiner, and the optical splitter is used for splitting input light into a first light beam and a second light beam; the first semiconductor optical chip and the first reflector are sequentially arranged along a light path of the first light beam; the first semiconductor optical chip is electrified to perform gain amplification on the first light beam; the first reflector is used for reflecting the first light beam after gain amplification; the second reflector and the second semiconductor optical chip are sequentially arranged along the light path of the second light beam; the second reflector is used for reflecting the second light beam into the second semiconductor optical chip, and the second semiconductor optical chip is electrified to perform gain amplification on the second light beam; the beam combiner is arranged at the tail end of the light path of the first light beam and the tail end of the light path of the second light beam and used for combining and emitting the first light beam and the second light beam. According to the utility model, the output optical power can reach 20dBm.

A semiconductor optical amplifier array device includes: a substrate; and a plurality of semiconductor optical amplifiers formed on the substrate, each of the semiconductor optical amplifiers including an active region, and two input-output ports optically connected to the active region and disposed on same facet of the semiconductor optical amplifier array device. The plurality of semiconductor optical amplifiers include a first semiconductor optical amplifier in which length of the active region is equal to a first length, and a second semiconductor optical amplifier in which length of the active region is equal to a second length that is different from the first length.

Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions having normalized output power. The device and systems disclosed herein include an interferometer comprising a first branch formed of a first waveguide and a second branch formed of a second waveguide. A resonator cavity is coupled to the second first waveguide and at least one phase-shift mechanism is coupled to one of the second waveguide and the resonator cavity. The at least one phase-shift mechanism is configured to control biases of the interferometer to achieve a desired activation function at an output of the interferometer, and an optical amplification mechanism is coupled to the output of the interferometer and configured to add optical gain to the desired activation function.

A tunable laser includes: a channel selection assembly, a plurality of optical amplifiers, a micro-ring filtering assembly and a reflection assembly. The micro-ring filtering assembly is coupled to the reflection assembly, and operation wavelength ranges of the respective optical amplifiers are different. The channel selection assembly is used for selecting any optical amplifier to input a gain optical signal to the micro-ring filtering assembly. The micro-ring filtering assembly is used for filtering the gain optical signal under a vernier caliper effect to obtain filtered optical signals, and then inputting same into the reflection assembly. The reflection assembly is used for outputting some of the filtered optical signal outwards, and reflecting, after the remaining optical signals pass through the micro-ring filtering assembly, the remaining optical signals to an optical amplifier currently selected by the channel selection assembly.

An (SOA) system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process, the VCSEL having an HCG grading. At least one of an ASIC and driver controller coupled to the VCSEL laser, the ASIC monitoring an output of a light pulse over wavelength.

The invention relates to the technical field of optical communication, and provides a laser chip which comprises an electro-absorption modulator and a semiconductor optical amplifier and further comprises a reflection grating used for reflecting spontaneous radiation light of the reflection semiconductor optical amplifier, the semiconductor optical amplifier is arranged on the light outlet side of the electro-absorption modulator, and the reflection grating is used for reflecting the spontaneous radiation light of the reflection semiconductor optical amplifier. The reflection grating is arranged in the area where the semiconductor optical amplifier is located, and the reflection grating is arranged close to the area where the electro-absorption modulator is located. The invention also provides a preparation method of the laser chip. By arranging the reflection grating, spontaneous radiation light of the semiconductor optical amplifier can be reflected, light crosstalk is reduced, and signal quality is improved.

A semiconductor laser and a photonic nonlinear circuit chip are integrated together. The nonlinear circuit chip may include a nonlinear waveguide configured or controlled to enable sum-frequency generation, difference-frequency generation, second-harmonic generation, parametric amplification, or other nonlinear processes. Coupling between the semiconductor laser and the nonlinear circuit may be optimized by mode-matching, while back-reflections are minimized by diverting the reflections so that optical isolators are not needed. The integration of the semiconductor laser and the nonlinear photonic circuit chip enables nonlinear optical processing using a compact and scalable platform in a flexible manner that is compatible with different types of semiconductor lasers and different operation regimes. An additional input is provided so users can input an optical signal into the photonic chip for processing therein. In some examples, the photonic chip is configured with pump resonators, such as racetrack resonators. Method and device examples are described herein.

A system comprises a seed laser diode, a semiconductor optical amplifier, and a driver. The seed laser diode is configured to produce a seed optical signal. The semiconductor optical amplifier is configured to, based on an injected amplifier current pulse, amplify the seed optical signal to produce an emitted optical signal. The driver is configured to provide to the seed laser diode or the semiconductor optical amplifier, a profiled compensation current associated with the injected amplifier current pulse to at least in part control a frequency chirp of the emitted optical signal.

Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

An amplifier operable with an electric drive signal can amplify signal light having a signal wavelength. A laser diode has an active section with input and output facets. The facets are in optical communication with the signal light and are configured to pass the signal light through the laser diode. The active section is configured to generate pump light in response to injection of the electrical drive signal into the active section. The pump light has a pump wavelength different from the signal wavelength. A doped fiber doped with an active dopant is in optical communication with the signal light and is in optical communication with at least a portion of the pump light from the laser diode. The pump wavelength of the pump light is configured to interact with the active dopant of the fiber and thereby amplify the signal light.

Provided are arrangements of optical elements that combine the features of a high power, compact laser that exhibits narrow linewidth output and that does not appreciably shift in wavelength or vary in power over a wide range of temperatures. Such arrangements include a transmission filter and a Bragg reflector that select out the wavelength for which the output power of a reflective semiconductor optical amplifier (RSOA) is least affected by changes in temperature over a temperature range of interest. Such arrangements may also utilize temperature-insensitive materials.

The invention relates to the technical field of semiconductor laser control, and discloses a laser stable power control device for an array atom magnetometer and a control method of the laser stable power control device. The laser light splitting optical path is arranged at the output end of the amplification laser; the double-ring active anti-interference stable power control board card is connected with a photoelectric detector in the laser light splitting light path, and the double-ring active anti-interference stable power control board card is used for receiving a light power signal of the measuring light provided by the laser light splitting light path so as to obtain the magnitude of compensation current needed by an amplification laser; the digital laser controller is used for injecting current into the amplification laser and controlling the temperature of the amplification laser; the beam splitter is connected with one end, far away from the amplification laser, of the laser splitting light path; and the array type atom magnetometer is used for carrying out array type measurement on a space magnetic field. The power stability of the amplification laser is improved.

Provided is an optical device having a long lifetime and high reliability. An optical device according to one embodiment comprises at least one Mach-Zehnder (MZ) modulator and a redundant semiconductor optical amplifier (SOA). The redundant SOA is connected to at least one MZ modulator via a 2-input 2-output coupler. The redundant SOA includes two SOAs arranged in parallel, and the two SOAs are arranged in two waveguides connected to the 2-input 2-output coupler, respectively. The redundant SOA is configured to switch the two SOAs to amplify light modulated by the at least one MZ modulator or light obtained before modulation.

According to the laser and the preparation method thereof provided by the invention, the laser comprises the packaging cavity, and the packaging cavity is internally provided with the gain chip, the wavelength selection assembly and the reflector. Each gain chip comprises a top layer, a bottom layer and a light-emitting layer. Each light-emitting layer comprises a first active area, a passive grating area and a second active area. The first active region emits a light beam of a wide wavelength range. The end face of the passive grating area can serve as a first resonance end face of the laser. The reflector serves as a second resonant end face of the laser and forms a resonant cavity with the first resonant end face. The wavelength selection assembly selects the light with the specific wavelength from the light beams with the wide wavelength range, the light with the specific wavelength oscillates back and forth in the resonant cavity to obtain the gain to form the laser, and the second active area further performs gain amplification on the laser, so that the output light power of the laser is improved. On-chip integration of the first active area and the second active area is realized through the passive grating area, so that the size of a packaging cavity is reduced, and the laser is miniaturized.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

Laser circuits are disclosed herein that include, in one example, a proxy laser drive cell and a proxy comparator circuit for deriving a laser driver bias control using one or more constant current supplies. Comparator circuits are disclosed that are adapted to generate an output based on a proxy voltage having first and second voltage components wherein one of the voltage components is developed based on one or more constant current supplies indicative of laser control current.

The invention provides a broadband linear frequency modulation microwave source based on ultra-short external cavity modulation light feedback, and relates to the field of microwave photonics. Continuous light generated by the main semiconductor laser is injected into the slave laser after being adjusted, so that the slave laser works in a periodic oscillation state; the slave laser, the electro-absorption modulator and the reflector are integrated to form an ultra-short outer cavity, and the intensity of feedback light is regulated and controlled by an external signal source so as to realize linear scanning of cavity mode frequency. After beam splitting of light output from the laser, one path forms a long external cavity feedback stable signal through the adjustable optical fiber delay line, and the other path outputs a target signal after beat frequency of the photoelectric detector and filtering of the band-pass filter. A high-speed modulator and a high-frequency microwave source are not needed, the broadband advantage of a photonics scheme is reserved, the frequency sweeping bandwidth is further improved to 60 GHz or above, the center frequency and the frequency sweeping range are independently adjustable, the structure is simple, cost is low, integration is easy, and the device is suitable for scenes such as photoelectric radars.