Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated LED light-emitting device and manufacturing method thereof

A technology of light-emitting devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as poor connection stability, achieve better heat dissipation effects, better heat dissipation, and facilitate batch use Effect

Active Publication Date: 2016-02-17
ANHUI SANAN OPTOELECTRONICS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention proposes an integrated LED light-emitting device and its manufacture, which can effectively improve the problems of package welding, electrode shading, and poor connection stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated LED light-emitting device and manufacturing method thereof
  • Integrated LED light-emitting device and manufacturing method thereof
  • Integrated LED light-emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042]In this embodiment, in order to simplify the drawings and facilitate description, three LED light-emitting units are used to form an integrated LED light-emitting device. number.

[0043] Please see attached figure 1 , an integrated LED light-emitting device, including: a light-emitting epitaxial unit 110 , ohmic contact layers 121 , 122 , an electrode pad layer 130 , and an insulator 140 . Specifically, the epitaxial layers of each light-emitting epitaxial unit 110 are isolated from each other through the isolation channel 150 , and in a preferred embodiment, the isolation channel 150 can be filled with an insulating material. The light-emitting epitaxial unit 110 is a flip-chip thin-film structure, including an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer from top to bottom, but is not limited thereto. The N-type ohmic contact layer 121 and the P-type ohmic contact layer 122 are located on the N-type epitaxial layer and the P-type epit...

Embodiment 2

[0047] In some large-scale light-emitting devices, the shape and size of the P and N regions of the electrode pad layer will become one of the important factors affecting the reliability of the device. For example, in the asymmetric electrode design of the conventional technology, in the eutectic process Excessive difference in electrode area may cause the chip to tilt, resulting in eutectic failure at electrodes with a relatively small area, resulting in electrical connection failure.

[0048] Please see attached image 3 The main difference between this embodiment and Embodiment 1 is that the areas of the P and N regions 130p and 130n of the electrode pad layer are close to or substantially the same. Specifically, it is achieved by the following method: an insulating layer 160 is provided on the P and N ohmic contact layers 122 and 121, and the N-type ohmic contact layer 121 is electrically insulated from the light-emitting layer and the p-type epitaxial layer of the LED epi...

Embodiment 3

[0050] In this embodiment, the lower surface of the end of the insulator 140 away from the light-emitting epitaxial stack protrudes from the lower surface of the electrode pad layer 130, which effectively prevents the short circuit between the P and N electrodes in the subsequent packaging process of the device. Assuming that the height difference between the relative position of the lower surface of the electrode pad layer 130 and the relative position of the lower surface of the insulator is H, and the gap D between the P and N regions of the electrode pad layer, this embodiment can be optimized by adjusting the size of H and D implementation effect. In this embodiment, the height difference H may be 20-100 μm, preferably 50 μm, and the gap D may be 20-100 μm, preferably 50 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an integrated LED light-emitting device and its manufacture. Its integrated LED light-emitting device includes: at least two LED light-emitting epitaxial units separated from each other, including upper and lower surfaces, the upper surface of which is a light-emitting surface; an electrode pad layer, formed on the lower surface of the LED light-emitting epitaxial unit, has The thickness is sufficient to support the LED epitaxial unit and connect the various LED light-emitting epitaxial units to form a plane connection circuit without height difference; the electrode pad layer is divided into P and N electrode areas. The LED light-emitting epitaxial units form a series, parallel or series-parallel circuit. The invention can effectively improve the problems of package welding, electrode shading, poor connection stability and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting devices, in particular to an integrated LED light emitting device and a manufacturing method. Background technique [0002] In recent years, with the rapid development of semiconductor lighting technology, technical difficulties such as LED chips and packaging and subsequent module lamps have been overcome one by one; the current mainstream lighting packaging methods basically use multiple chips to form a series or series-parallel structure, which requires multiple chips. For LED chips, during the packaging process, operations such as solid crystal, wire bonding, and phosphor coating are performed on each LED chip, and the operations are relatively cumbersome. [0003] In order to solve the above problems, predecessors proposed the concept of high-voltage LED chips, and realized its advantages in practical applications, but traditional high-voltage chips still have problems such as ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/36H01L33/00
CPCH01L25/0753H01L27/156H01L33/382H01L33/62H01L24/14H01L2224/16245H01L2924/01322H01L2924/12041H01L2924/00H01L33/387H01L33/486H01L27/15H01L33/005H01L33/44H01L21/78H01L2933/0016H01L2933/0033H01L2933/0025H01L27/153H01L33/385H01L2933/0066
Inventor 黄少华曾晓强赵志伟
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com