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Passive Q-switched Nd:YAG intra-cavity 1570nm OPO laser

A technology of lasers and inner cavities, which is applied in lasers, laser components, phonon exciters, etc., can solve the problems of low light-to-light conversion efficiency and difficulty in miniaturization, and achieve compact structure, reduced volume, and electro-optic efficiency. Improved effect

Inactive Publication Date: 2018-04-20
SOUTH WEST INST OF TECHN PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] This method usually requires a higher laser power density (or energy density) of 1.064μm wavelength to reach the threshold of OPO laser generation, so the light-to-light (1.064μm→1.57μm) conversion efficiency is not high (about 20%) , and not easy to miniaturize

Method used

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  • Passive Q-switched Nd:YAG intra-cavity 1570nm OPO laser
  • Passive Q-switched Nd:YAG intra-cavity 1570nm OPO laser
  • Passive Q-switched Nd:YAG intra-cavity 1570nm OPO laser

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Embodiment Construction

[0023] In order to make the purpose, content and advantages of the present invention clearer, the specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] Such as figure 2 and image 3 Shown, this example Cr 4+ YAG passively Q-switched Nd:YAG intracavity 1.57μm OPO laser includes: Nd:YAG crystal 3, KTP crystal 5, Cr 4+ : YAG Q-switching crystal 4, polarizer P, planar resonant cavity mirror, diffuse reflection concentrating cavity 1 and pulse xenon lamp 2; pulse xenon lamp 2 and Nd:YAG crystal 3 are located in diffuse reflection concentrating cavity 1, and planar resonant cavity mirror includes 1.064μm output mirror M11 and 1.064μm total reflection and 1.57μm output mirror M12; Nd:YAG crystal 3, Cr 4+ : YAG Q-switching crystal 4, polarizer P, and KTP crystal 5 are coaxially arranged along the optical path direction, the 1.064 μm output mirror M11 is located outs...

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Abstract

The invention discloses a passive Q-switched Nd:YAG intra-cavity 1570nm OPO laser whose two ends output Cr4+. A pulse xenon lamp and an Nd:YAG crystal are positioned in a diffuse-reflection gatheringcavity; a planar resonant cavity comprises a 1.064-micron outgoing mirror and a 1.064-micron totally-reflecting and 1.57-micron outgoing mirror; the Nd:YAG crystal, a Cr4+:YAG Q-switched crystal, a Polaroid, a KTP crystal are arranged coaxially along the direction of an optical path; the 1.064-micron outgoing mirror is positioned outside the Nd:YAG crystal; the 1.064-micron totally-reflecting and1.57-micron outgoing mirror is positioned outside the KTP crystal;af after absorbing energy radiated by a pump source of the pulse xenon lamp, the Nd:YAG crystal generates excited radiation transitionin the wavelength of 1.064 micron; and transition photons form resonance in a laser resonant cavity composed of the 1.064-micron outgoing mirror and the 1.064-micron totally-reflecting and 1.57-micron outgoing mirror, generate 1.064 micron laser giant pulse output after being Q-switched by Cr4+:YAG, and serve as a pump light source generating a light parameter oscillation effect of a nonlinear crystal KTP.

Description

technical field [0001] The invention belongs to the technical field of laser design, and relates to a Cr 4+ Passively Q-switched Nd:YAG intracavity 1.57μm OPO laser. Background technique [0002] The 1.57μm OPO laser technology converts the 1.064μm laser wavelength into a laser wavelength output of about 1.57μm through the optical parameter conversion effect of nonlinear crystals (OPO for short). Features such as high target reflection coefficient. [0003] At present, the commonly used method is to use the 1.064μm laser generated by the Nd:YAG laser as the pump light to irradiate the nonlinear crystal (such as KTP crystal), and then convert it to 1.57μm through the optical parametric oscillation effect of the nonlinear crystal (OPO for short). Left and right laser wavelength output, the schematic diagram of the optical path is as follows figure 1 shown. [0004] M in the picture 1 -1.064μm HR, M 2 -1.064μm PR, Cr4 + : YAG Q-switched crystal, polarizer P, pulsed xenon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/11H01S3/108G02F1/35
CPCH01S3/11G02F1/3544H01S3/108H01S3/1083
Inventor 翟刚马楠杨峰马利国蒋放李晶
Owner SOUTH WEST INST OF TECHN PHYSICS
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