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Integrated LED (Light Emitting Diode) light emitting device and manufacturing method thereof

A technology of light-emitting devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as poor connection stability, achieve better heat dissipation, increase service life, and reduce thermal resistance.

Active Publication Date: 2013-09-18
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention proposes an integrated LED light-emitting device and its manufacture, which can effectively improve the problems of package welding, electrode shading, and poor connection stability.

Method used

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  • Integrated LED (Light Emitting Diode) light emitting device and manufacturing method thereof
  • Integrated LED (Light Emitting Diode) light emitting device and manufacturing method thereof
  • Integrated LED (Light Emitting Diode) light emitting device and manufacturing method thereof

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Embodiment 1

[0042] In this embodiment, in order to simplify the drawings and facilitate the description, three LED light-emitting units are taken to form an integrated LED light-emitting device. It should be understood that the present invention is not limited to this, and the number of light-emitting units can be selected according to specific implementation needs. number.

[0043] Please refer to the attached figure 1 , The integrated LED light-emitting device includes: a light-emitting epitaxial unit 110, ohmic contact layers 121, 122, an electrode pad layer 130, and an insulator 140. Specifically, each light-emitting epitaxial unit 110 is isolated from each other by the epitaxial layer through the isolation channel 150. In a preferred embodiment, the isolation channel 150 can be filled with insulating material. The light-emitting epitaxial unit 110 has a flip-chip structure, and includes an N-type epitaxial layer, a light-emitting layer, and a P-type epitaxial layer from top to bottom, b...

Embodiment 2

[0047] In some large-size light-emitting devices, the shape and size of the P and N regions of the electrode pad layer will become one of the important factors that affect the reliability of the device. For example, in the asymmetric electrode design of the prior art, in the eutectic process Excessive difference in the size of the electrode area may cause the chip to tilt, causing eutectic failure at the electrode with a relatively small area, and finally causing electrical connection failure.

[0048] Please refer to the attached image 3 The main difference between this embodiment and Embodiment 1 is that the areas of the P and N regions 130p and 130n of the electrode pad layer are close or substantially the same. This is specifically achieved in the following manner: an insulating layer 160 is provided on the P and N ohmic contact layers 122 and 121, and the N-type ohmic contact layer 121 is electrically insulated from the light-emitting layer of the LED epitaxial structure and...

Embodiment 3

[0050] In this embodiment, the lower surface of the end of the insulator 140 away from the light-emitting epitaxial stack protrudes from the lower surface of the electrode pad layer 130, which effectively prevents the P and N electrodes from being short-circuited in the subsequent packaging process of the device. Assuming that the height difference between the relative position of the lower surface of the electrode pad layer 130 and the relative position of the lower surface of the insulator is H, the gap D between the P and N regions of the electrode pad layer can be optimized by adjusting the sizes of H and D. The effect of implementation. In this embodiment, the height difference H may be 20-100 μm, preferably 50 μm, and the gap D may be 20-100 μm, preferably 50 μm.

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Abstract

The invention discloses an integrated LED (Light Emitting Diode) light emitting device and a manufacturing method thereof. The integrated LED light emitting device comprises at least two mutually-separated LED light-emitting epitaxial units and electrode soldering pan layers, wherein each LED light-emitting epitaxial unit contains an upper surface and a lower surface, the upper surfaces serve as light emitting surfaces, and the electrode soldering pan layers are formed on the lower surfaces of the LED light-emitting epitaxial units, have enough thickness to support the LED light-emitting epitaxial units and are used for connecting all the LED light-emitting epitaxial units so as to form a connected circuit of a plane without height drop; and the electrode soldering pan layers are divided into P and N electrode regions. A series, parallel or series-parallel circuit is formed by all the LED light-emitting epitaxial units. The integrated LED light emitting device and the manufacturing method of the integrated LED light emitting device have the advantage that the problems of package welding, electrode shading, poor connection stability and the like can be solved effectively.

Description

Technical field [0001] The invention relates to the technical field of semiconductor lighting devices, in particular to an integrated LED light-emitting device and a manufacturing method. Background technique [0002] In recent years, with the rapid advancement of semiconductor lighting technology, technical difficulties such as LED chips and packaging and subsequent module lamps have been overcome one by one; the current mainstream lighting packaging basically uses multiple cores to form a series or series-parallel structure, so multiple chips are needed. For the LED chip, during the packaging process, each LED chip will be solidified, wire-bonded, and coated with phosphor, which is cumbersome. [0003] In order to solve the above problems, the predecessors proposed the concept of high-voltage LED chips and realized their advantages in practical applications. However, traditional high-voltage chips still have problems such as unimproved packaging and welding, shading electrodes, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L33/36H01L33/00
CPCH01L25/0753H01L27/156H01L33/382H01L33/62H01L24/14H01L2224/16245H01L2924/01322H01L2924/12041H01L2924/00H01L33/387H01L33/486H01L27/15H01L33/005H01L33/44H01L21/78H01L2933/0016H01L2933/0033H01L2933/0025H01L27/153H01L33/385H01L2933/0066
Inventor 黄少华曾晓强赵志伟
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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