31 results about "Electron resists" patented technology

The invention relates to a method for preparing nanometer structures on an insulating substrate. The method comprises the following steps of: selecting and disposing the insulating substrate; spin-coating electronic anti-corrosion adhesive after an aluminium film with suitable thickness is aggraded on the substrate by coating equipment; designing the shape and the dimension of the required surface nanometer structure according to the requirement; realizing the precise exposal of the design graphics on the surface of the substrate in an electron beam exposal system; realizing suitable undercut structure at the exposal line position in a dual-layer structure of electronic anti-corrosion adhesive and aluminium by controlling the process parameters such as temperature of alkali liquor, consistency of alkali liquor and corrosion disposal time; finally realizing the sediment of nanometer structure material by the coating equipment and completing the preparation of the nanometer structure by solubilisation process and alkali liquor disposal. The method overcomes the charge accumulation effect of the insulating substrate in the electron beam exposal system and realizes the exposal of the nanometer graphics; meanwhile, the prepared undercut structure can extremely effectively assist the subsequent solubilisation process, thus ensuring that the surface nanometer structure is effectively, integrally and precisely realized on the insulating substrate material.

The preparation method for nano electrode comprises: growing well-conductive metal or semiconductor layer; using EBL to obtain a couple or group negative electronic anti-corrosive agent, and coating the agent; first baking; with electron beam to direct expose; developing, fixing, etching, and stripping the photoresist. The product has 20-100nm space and fit to wide application. This invention is simple and reliable, and compatible with traditional CMOS technology.

A method uses the positive electron anticorrosion agent to prepare metal nano electrode. The main features of the invention is to use the neighboring effect of electron band, use the EBL to gain a pair or a group of the positive electron anticorrosion agent groove figures that have line, hole and other various shapes at the space that is measured by nano on various underlay, and then use secondly the metal deposition and peel off technology to prepare various metal material nano electrode. The main procedures of which include coating the positive electron anticorrosion agent on the interlay; baking frontally; expose by direct electron band; develop; to fix; vaporize or sputtering metal; to peel off in the acetone. The distance between the metal nano electrode that is prepared by such method can be 30~100mm, is suitable to make various quanta component, nano line, nano tube component, single electronic component and various components or circuit. The method has many advantages, such as: less technology procedure, simple, stable and reliable, multiple uses and can be compatible with the traditional CMOS technology.

The invention discloses a method of producing surface acoustic wave devices by exposing X-rays in a direct writing way. Electron beam resist concave solid figures of an interdigital transducer are obtained by photoetching electron beams on a piezoelectric substrate, and various surface acoustic wave devices are produced with the stripping technology. The method of producing surface acoustic wave devices by exposing X-rays in a direct writing way comprises the following concrete steps: spreading the electron beam resist on the piezoelectric substrate; prebaking the electron beam resist; growingmetal material which has weak back scattering effect on the electron beam exposure; exposing the electron beams in a direct writing way; removing the metal layer; developing the electron beam resist;fixing the electron beam resist; growing interdigital electrode metal and stripping a beam resist masking film. An interdigital electrode produced with the method has steep and straight edges and good width control, and the method can be used for producing the surface acoustic wave devices which have the characteristic linewidth of less than 500nm. The method needs less process steps and is simple, stable and reliable.

The invention discloses a preparing method of nanometer-class coulomb island structure, it includes: A. smearing electron slushing compound on conducting layer of underlay; B. baking the electron slushing compound; C. electron beam exposing the electron slushing compound; D. imaging the electron slushing compound exposed; E. fixing the electron slushing compound imaged; F. process of glue-eliminating and high temperature oxidation is proceeded to coulomb island structure obtained to obtain nanometer-class coulomb island structure whose size is more smaller. With the invention, preparing craftwork is simplified, cost is decreased, efficiency is increased, and reliability of coulomb island structure is increased. The preparing method provided in the invention possesses advantages that it is compatible with traditional CMOS, fits for the extending and application.

An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

The invention discloses a method for preparing a nanometer pattern. Pattern data is converted into a binary signal to control the movement of a microchecker in the two-dimensional x-y direction and the loading of the metal tip voltage; and the nanometer pattern is obtained through the exposure of an electronic resist by the electron beam produced by the loaded tip voltage. The method comprises the following steps: coating an electric resist film onto the surface of a sample, and fixing a metal micro-tip on the microchecker; loading the sample coated with the electric resist film onto the microchecker, and keeping a certain distance from the micro-tip; placing the microchecker loaded with the metal tip and the sample into a vacuum cavity, and vacuumizing the cavity through a vacuum pump; converting the pattern data to be processed into the binary signal through software programming, using the binary code to control the microchecker to move in the two-dimensional x-y direction, loading the voltage to the metal micro-tip, and exposing the electronic resist through the low-energy electron beam emitted by the tip in a strong electric field; and carrying out the development and fixation of the exposed sample. The method effectively solves the problems that the immersed type photolithography has high cost; and a focused electron beam has a proximity effect on the resolution.

Fine graphics in Nano level can be prepared by using ZEP520 positivity electronic resist and electron beam write through photo etching. But, cracks are generated easily in resist in traditional technique, especially on substrate of gallium arsenide. There is no relevant solution for the problem. The disclosed method carries out heat treatment for substrate of wafer first; and then the method coats ZEP520 glue instantly so as to prevent ZEP520 from generation of cracks, as well as prevent poisonous tackifier HMDS from use. Advantages are: simple operation, convenience and reliable.

The invention relates to a surface acoustic wave filter and a preparation method thereof. The preparation method comprises the following steps: step 1, placing a filter plate with nanopores between amask plate and a piezoelectric substrate coated with an electronic resist; step 2, transferring the interdigital electrode mask pattern pinhole image on the mask onto the electronic resist of the piezoelectric substrate by using an electron beam exposure method, and forming an interdigital electrode pattern of which the line width is reduced relative to the interdigital electrode mask pattern of the mask on the piezoelectric substrate; step 3, stripping or etching an exposed area outside the interdigital electrode pattern of the piezoelectric substrate; and step 4, removing the electronic resist, and forming an interdigital electrode on the piezoelectric substrate to obtain the surface acoustic wave filter. According to the method disclosed in the invention, the line width of the a devicecan be reduced, the center frequency of the device can be improved, meanwhile, the preparation method can realize rapid and large-batch preparation of the device, and the processing cost is reduced.

The invention discloses an optimization method for the resolution ability of an electron beam exposure machine, which comprises the following steps: (1) optimizing the characteristics of an electronicresist: selecting a FEP positive photoresist, wherein the photoresist has high sensitivity, high resolution and contrast; (2) optimization of proximity effect: adopting software correction measures to correct proximity effect by adjusting the geometry of wavefront engineering, or by exposure dose modulation, or by combining the two; (3) Optimization of developing program of developing machine: baking after exposure. The method of the invention finds a critical point of the maximum resolution capability of the current exposure equipment, and at the same time, searches for the possibility of improving the exposure resolution capability of the mask without changing the exposure equipment by optimizing the exposure process, so as to meet the exposure process requirements of the high-end mask.

The invention discloses a multi-time overlay method, which belongs to the technical field of semiconductor micro-nano manufacturing, and comprises the following steps: cleaning a substrate; spin-coating an electronic resist on the substrate; performing electron beam exposure on the pattern, and meanwhile exposing the mark array near the pattern needing to be overlaid; developing the spin-coating electronic resist; etching the pattern and the mark which are overlayed for the first time at the same time; removing the electronic resist; spin-coating an electronic resist on the substrate; using the etching mark near the position needing to be overlayed in the last processing as an overlay mark, performing electron beam overlay on the pattern, and exposing the mark array at the same time; developing the spin-coating electronic resist; etching the pattern and the mark which are subjected to the last overlay at the same time; removing the electronic resist; and finishing the last time of overlay and etching. According to the method, the accumulation of two adjacent overlay deviations and the influence of the relative position deviation of the mark and the graph caused by field splicing are solved, the overlay precision is improved, and the problem that the overlay precision is influenced by the pollution of the mark can also be solved.