31 results about "Electron resists" patented technology

The invention relates to a method for extracting an electron beam lithography scattering parameter. In order to solve the problems of complex operation and difficult guarantee for the accuracy in the existing method for extracting the electron beam lithography scattering parameter, the invention provides the method for extracting the electron beam lithography scattering parameter. According to the electron beam resist agent for parameter extraction and the substrate structure characteristics, the method designs a suitable front-scattering parameter Alpha, a back-scattering parameter Beta, andan extracting version map of Gama which is the ratio of the back-scattering deposition energy and the front-scattering deposition energy; and then electron beam direct writing lithography of variabledoses for three types of design version maps is carried out on the electron beam resist agent and the substrate structure; and finally, according to a plurality of groups of different parameter lithography, development and the stripped graph structure features, a group of suitable scattering parameters are determined. The invention does not need large amount of complex measurement, therefore, no measurement error exists, the error caused by mathematical treatment is reduced, and the parameter extraction is led to be accurate, simple and feasible.

An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

The invention discloses a method of producing surface acoustic wave devices by exposing X-rays. A master set of an interdigital transducer is produced by photoetching electron beams on a hollow polyimide self-supporting film; electron beam resist concave solid figures of the interdigital transducer are obtained by exposing X-rays on a piezoelectric substrate; and various surface acoustic wave devices are produced with the stripping technology. By adopting the method of producing the surface acoustic wave devices by exposing X-rays, the back scattering effect of the material of the nano-scale interdigital transducer electrode can be greatly reduced, the nano-scale interdigital transducer electrode can be obtained, and the working performance and the performance of the surface acoustic wavedevices are improved; and in addition, the X-rays can be exposed repeatedly for many times, thus the producing efficiency of the surface acoustic wave devices is improved, and the producing cost is lowered.

The preparation method for nano electrode comprises: growing well-conductive metal or semiconductor layer; using EBL to obtain a couple or group negative electronic anti-corrosive agent, and coating the agent; first baking; with electron beam to direct expose; developing, fixing, etching, and stripping the photoresist. The product has 20-100nm space and fit to wide application. This invention is simple and reliable, and compatible with traditional CMOS technology.

The invention discloses a method for making nanoscale graphics. The nanoscale graphics convert graphic data into binary signals to control the movement of the two-dimensional x-y direction of the micro-movement table and the loading of the metal tip voltage, and use the electrons generated after the tip is loaded with voltage. The beam is exposed to the electron resist, including: coating a layer of electroresist film on the surface of the sample, fixing the metal microtip on the micro-movement stage; loading the sample coated with the electroresist film on the Keep a certain distance from the micro-tip on the micro-motion table; place the micro-motion table loaded with metal tips and samples into the vacuum cavity, and use the vacuum pump to evacuate the cavity; use software programming to convert the processed graphic data into Binary signal, use the binary code to control the micro-motion stage to move in the two-dimensional x-y direction, and apply voltage to the metal microtip, and expose the electronic resist through the low-energy electron beam emitted by the tip under a strong electric field; The samples were developed and fixed. The invention effectively solves the problems of high cost of immersion lithography and proximity effect of focused electron beams affecting resolution.

The invention discloses a controllable preparation method of a germanium-silicon nano lower-dimension structure and the germanium-silicon nano lower-dimension structure. The controllable preparation method comprises the following steps of (a) cleaning a silicon substrate; (b) forming germanium-silicon alloy on the silicon substrate in an epitaxial growth mode to form an epitaxial substrate; (c) spreading electron resist and exposing the required germanium-silicon nano lower-dimension structure graph on the electron resist through the electron beam photolithography; (d) transferring the germanium-silicon nano lower-dimension structure graph to the epitaxial substrate through dry etching to obtain a sample; (e) removing the electron resist on the sample; (f) performing oxidation and anneal under a high-temperature environment to enable oxygen to react with silicon preferentially to form silicon oxide and germanium to be separated out; (g) performing anneal in a nitrogen and hydrogen mixing atmosphere to form the germanium-silicon nano lower-dimension structure. By means of the controllable preparation method, controllable preparation of the germanium-silicon nano lower-dimension structure in dimension, shape, position and component is achieved. Furthermore, the controllable preparation method has the advantages of being low in process difficulty, high in repeatability and capable of performing large-scale integration easily.

The invention discloses a preparing method of nanometer-class coulomb island structure, it includes: A. smearing electron slushing compound on conducting layer of underlay; B. baking the electron slushing compound; C. electron beam exposing the electron slushing compound; D. imaging the electron slushing compound exposed; E. fixing the electron slushing compound imaged; F. process of glue-eliminating and high temperature oxidation is proceeded to coulomb island structure obtained to obtain nanometer-class coulomb island structure whose size is more smaller. With the invention, preparing craftwork is simplified, cost is decreased, efficiency is increased, and reliability of coulomb island structure is increased. The preparing method provided in the invention possesses advantages that it is compatible with traditional CMOS, fits for the extending and application.

The invention discloses a method of producing surface acoustic wave devices by exposing X-rays in a direct writing way. Electron beam resist concave solid figures of an interdigital transducer are obtained by photoetching electron beams on a piezoelectric substrate, and various surface acoustic wave devices are produced with the stripping technology. The method of producing surface acoustic wave devices by exposing X-rays in a direct writing way comprises the following concrete steps: spreading the electron beam resist on the piezoelectric substrate; prebaking the electron beam resist; growing metal material which has weak back scattering effect on the electron beam exposure; exposing the electron beams in a direct writing way; removing the metal layer; developing the electron beam resist; fixing the electron beam resist; growing interdigital electrode metal and stripping a beam resist masking film. An interdigital electrode produced with the method has steep and straight edges and good width control, and the method can be used for producing the surface acoustic wave devices which have the characteristic linewidth of less than 500nm. The method needs less process steps and is simple, stable and reliable.