Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for making nanoscale graphics

A nanoscale, graphic technology, applied in the direction of manufacturing microstructure devices, photolithographic process of patterned surface, process for producing decorative surface effects, etc., can solve the problems of focused electron beam affecting resolution and high cost, and achieve high resolution, resolution of high cost, low cost effects

Active Publication Date: 2011-12-07
新疆中科丝路物联科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the main purpose of the present invention is to provide a method for producing nanoscale patterns using electron beams produced by field emission, to effectively solve the problems of high cost of immersion lithography and proximity effect of focused electron beams affecting resolution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for making nanoscale graphics
  • A method for making nanoscale graphics
  • A method for making nanoscale graphics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0027] Such as figure 1 as shown, figure 1 It is a flow chart of the method for making nanoscale graphics using electron beams generated by field emission provided by the present invention. The nanoscale graphics convert graphic data into binary signals to control the two-dimensional x-y direction movement of the micro-motion stage and the loading of the metal tip voltage , obtained by exposing the electronic resist with an electron beam generated after the tip is loaded with a voltage, the method includes:

[0028] Step 101: Coating a layer of electroresist film on the surface of the sample, and fixing the metal microtip on the micro-motion stage; in this step, a layer of electroresist is coated on the surface of the sa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for making nanoscale graphics. The nanoscale graphics convert graphic data into binary signals to control the movement of the two-dimensional x-y direction of the micro-movement table and the loading of the metal tip voltage, and use the electrons generated after the tip is loaded with voltage. The beam is exposed to the electron resist, including: coating a layer of electroresist film on the surface of the sample, fixing the metal microtip on the micro-movement stage; loading the sample coated with the electroresist film on the Keep a certain distance from the micro-tip on the micro-motion table; place the micro-motion table loaded with metal tips and samples into the vacuum cavity, and use the vacuum pump to evacuate the cavity; use software programming to convert the processed graphic data into Binary signal, use the binary code to control the micro-motion stage to move in the two-dimensional x-y direction, and apply voltage to the metal microtip, and expose the electronic resist through the low-energy electron beam emitted by the tip under a strong electric field; The samples were developed and fixed. The invention effectively solves the problems of high cost of immersion lithography and proximity effect of focused electron beams affecting resolution.

Description

technical field [0001] The invention relates to the technical field of deep submicron and nanometer processing in microelectronic technology, in particular to a method for making nanometer-scale graphics by using electron beams generated by field emission. Background technique [0002] With the rapid development of the semiconductor industry, the feature size of the device has comprehensively entered the nanometer scale from deep submicron. The ability of nanoscale pattern processing has become the key to determine that integrated circuits continue to advance downwards according to Moore's law. At the same time, with the vigorous rise of nanoscience, nanoscale pattern processing has become the basis for the development of nanotechnology. [0003] At present, immersion lithography technology and focused electron beam lithography are generally used to realize nanoscale pattern processing. However, the above-mentioned immersion lithography technology has the problem of high i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00B81C1/00
Inventor 傅剑宇陈大鹏景玉鹏欧毅叶甜春
Owner 新疆中科丝路物联科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com