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Method for manufacturing hundred nano-scale electric solenoid or net-shaped structure

A network structure and solenoid technology, applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the complex production process, no 100-nanometer solenoid or network structure, and many process steps, etc. problem, to achieve the effect of fewer process steps

Inactive Publication Date: 2008-10-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, there are many methods for fabricating 100nm-scale solenoids or mesh structures, but most of them have complex manufacturing processes and many process steps. There is no use of electron beam direct writing exposure technology to fabricate 100nm-scale solenoids or mesh structures. Structured Public Reports

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  • Method for manufacturing hundred nano-scale electric solenoid or net-shaped structure
  • Method for manufacturing hundred nano-scale electric solenoid or net-shaped structure
  • Method for manufacturing hundred nano-scale electric solenoid or net-shaped structure

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Embodiment

[0048] In this embodiment, taking AZ1350 positive electronic resist as an example, the detailed method and steps for fabricating a 100nm-scale solenoid or network structure by electron beam direct writing exposure technology are further described with reference to the accompanying drawings.

[0049] Such as figure 2 as shown, figure 2 It is a flow chart of a method for fabricating a hundred-nanometer-scale solenoid or a mesh structure using electron beam direct writing exposure technology according to an embodiment of the present invention. The method includes the following steps:

[0050] Step 201: performing heat treatment on the substrate;

[0051] In this step, the heat treatment includes performing strict surface cleaning treatment on the base substrate and high temperature treatment on a hot plate at 120 degrees for 2 minutes.

[0052] Step 202: coating AZ1350 positive electronic resist on the substrate;

[0053] In this step, the substrate is a flat and clean Si su...

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Abstract

The present invention relates to a technical field of nano fabrication, providing a method of producing hundreds nanometer level solenoid or reticular formation, the method includes: A, processing heat treatment to a substrate; B, coating an electronic resist having inversion characteristic on the substrate; C, processing prebaking to the coating electronic resist; D, processing e-beam direct-writing exposure to the electronic resist; E, implementing inversion development and over development; F, fixing. The invention simplifies the producing process, achieving the aim of obtaining a stereostructure by planar exposure.

Description

technical field [0001] The invention relates to the field of nano-processing technology, in particular to a method for manufacturing a hundred-nano-scale solenoid or a network structure by using an electron beam direct writing exposure technology. Background technique [0002] There are many types of electronic resists used in electron beam exposure technology, but most of them are organic polymers, and AZ series or similar resists are no exception. When some polymers are irradiated (exposure) with an electron beam with a certain energy, the energy lost by inelastic scattering of electrons is absorbed by the polymer, and a series of chemical reactions will occur. [0003] For the commonly used linear chain polymers, there are mainly two reactions of chain scission and cross chain. Generally, under electron beam irradiation, two reactions occur simultaneously, but one reaction is always dominant. If there is not much difference between the two rates, the polymer cannot be u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F7/00B82B3/00
Inventor 李金儒赵珉王琴刘明陈宝钦
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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