The invention relates to the technical field of secondary
electron emission, in particular to a secondary
electron emission
analysis method and
system under the synergistic effect of a carbon thin film and a rectangular groove, and the method comprises the following steps: constructing a secondary
electron emission numerical
simulation model under the synergistic effect of an
amorphous carbon thin film and the rectangular groove; after an electron enters the
amorphous carbon film, the scattering type is determined according to a first condition, if the scattering type is satisfied,
elastic scattering is simulated according to a Mott
scattering theory, otherwise,
inelastic scattering is calculated according to a Penn
dielectric function model. And the electrons move to a material interface and are emitted if the interface barrier overcoming condition is met, secondary electron emission is recorded, and
simulation is terminated. According to the model,
multiple factors are integrated, the secondary electron emission process is accurately simulated, the synergistic effect is considered, so that the result is more practical, scattering
simulation is fine and targeted, electron emission and simulation termination are reasonably judged, important assistance is provided for material research and electronic device design, material performance can be optimized, and device performance can be predicted.