61 results about "Nano fabrication" patented technology

The invention belongs to the related technical field of laser micro-nano machining, and particularly relates to a 2.5 D micro-pattern laser machining method based on an acousto-optic deflector and a galvanometer, which is realized by adopting a laser device based on combination of an acousto-optic deflection module and the galvanometer, and comprises the following steps: in single track scanning of the galvanometer, according to a preset pulse machining sequence corresponding to a machined pattern, carrying out laser processing on the machined pattern according to a preset pulse processing sequence corresponding to the machined pattern; frequency control signals corresponding to the pulses are input into the two acousto-optic deflectors respectively, so that laser pulse distribution formed on the machined part after single-time track scanning of the galvanometer is shown as the pulse superposition number in the depth direction and the lap joint rate between adjacent pulses in the normal direction of the advancing direction of the galvanometer; the pulse superposition number of each pulse position in the depth direction reflects the processing depth of the pulse position, and the pulse number and the pulse overlap rate of each positioning position in the normal direction of the moving direction of the galvanometer are determined according to the section width and the contour radian in the width direction of a processing graph. According to the invention, the processing of any 2.5 D micro-pattern can be realized.

The invention discloses a preparation method of a flexible infrared super-surface absorber based on MDM, and belongs to the field of micro-nano machining patterning. The method comprises the following steps: pretreating a polymer material; depositing a layer of bottom metal film on the pretreated substrate by adopting magnetron sputtering; a metal reflecting layer, a dielectric insulating layer and a metal surface functional layer are sequentially deposited through magnetron sputtering, a periodic nano microstructure is constructed on the surface of a flexible composite film, a nano round pit array is etched in situ on a surface metal layer of an MDM structure by using a femtosecond laser selective etching process, and an MDM laminated structure is formed. According to the invention, stable integration of the MDM structure and the flexible substrate can be realized, and meanwhile, high absorptivity and good flexibility of the device in an infrared band are ensured. The absorber prepared by the invention can generate resonance absorption on incident infrared electromagnetic waves through a surface plasmon and F-P cavity resonance coupling mechanism, and meanwhile, the characteristic size variation is changed through physical excitation, so that effective absorption and frequency regulation of the electromagnetic waves at the infrared band of 3-14 microns are realized.

The invention discloses a visible light metasurface based on surface lattice resonance and a design method thereof. The design method comprises the following steps: constructing a dimensionless parameter space of a metasurface structure; performing simulation scanning in the dimensionless parameter space to determine main parameters strongly related to the resonant wavelength and secondary parameters weakly related to the resonant wavelength; setting the secondary parameter as a fixed value, taking the main parameter as a single design variable, determining the value of the main parameter according to the target resonant wavelength, and designing the serialized metasurface with the resonant wavelength continuously adjustable in the visible light range. According to the method, the design process can be obviously simplified, the process robustness can be greatly improved, the harsh dependence on the processing precision of the nano unit is reduced, the compatibility with the mainstream micro-nano processing process is ensured, and the stability and reliability of the device performance are ensured.

This application provides a method and system for fabricating an all-optical polarization switch. The method includes: obtaining the performance requirements of the polarization switch, which are the corresponding indicators of the polarization switch for the transmission, reflection, or absorption of various types of polarized light; constructing an initial simulation model based on preset parameters, wherein the initial simulation model is an intrinsic chiral resonant silicon-based metasurface composed of several basic units, each basic unit including an amorphous silicon thin film and two silicon elliptical cylinders located on the amorphous silicon thin film; adjusting the preset parameters of the initial simulation model according to the performance requirements using the finite element method until the initial simulation model meets the performance requirements, thereby obtaining a polarization switch simulation model; and fabricating the all-optical polarization switch using micro-nano fabrication processes based on the polarization switch simulation model, thereby improving the spectral range and response speed of the polarization switch.

The invention discloses a method for preparing a silicon escapement wheel, and belongs to the technical field of micro-nano machining. The method provided by the invention comprises the following steps: providing a thin silicon wafer with a target thickness, and etching one surface of the thin silicon wafer to form a plurality of blind holes; preparing a soft mask on the surface of one side, deviating from the blind hole, of the thin silicon wafer; etching one side of the soft mask on the thin silicon wafer so as to etch through the bottom of the blind hole to form a cantilever beam structure of the silicon escapement wheel; and taking down the silicon escapement wheel from the blind hole to obtain the free silicon escapement wheel. According to the method, the cantilever beam structure is formed, parts can be collected more easily, the problem of high-precision equipment needed by the bonding and glue filling process is solved, large-batch silicon escapement wheels can be simply prepared, meanwhile, the problem of side wall inclination angle caused by the fact that deep etching is needed at a time is solved, high quality of the side wall of the silicon escapement wheel is achieved, and the production efficiency is improved. And a solution is provided for preparing large-batch and high-yield silicon escapement wheel devices.

This invention discloses a photolithographically patternable lithium-ion electrolyte, its preparation method, and its applications. The electrolyte is a photolithographically curable lithium-ion electrolyte composition, comprising, by mass percentage, LiTFSI, polyethylene glycol methyl ether methacrylate, bisphenol A ethyl oxide dimethacrylate, fluoroethylene carbonate, succinic acid, 2-hydroxy-2-methyl-1-phenyl-1-propanone (HMPP), 3-(isobutyryloxy)propyltrimethoxysilane, and 2-methyl-2-acrylate-2-hydroxyethyl. This invention also discloses a stepwise preparation method for this composition and its applications in micro-energy storage and ion-electronic devices such as micro solid-state batteries, ion-controlled transistors, and neuromorphic devices. This electrolyte can be patterned at the micro-nano scale using standard photolithography processes, exhibiting excellent lithium-ion conductivity, electrochemical stability, mechanical flexibility, and optical transparency. It also shows good interface compatibility with gold electrodes / silicon wafers, requiring no additional etching or transfer processes. This solves the technical problems of existing solid-state electrolytes being difficult to fabricate at the micro-nano scale and incompatible with microelectronic processes, and has broad application prospects in the fields of micro-nano fabrication and micro-devices.

This invention belongs to the field of supramolecular chemistry and materials technology, and discloses a class of organometallic cages based on polythiol ligands, their preparation methods, and applications; the general chemical formula of the organometallic cages based on polythiol ligands is: [(R n M) x L y (IL) z In this invention, M is a metal center; R is an organic group attached to the metal center M; n is the number of R groups attached to each metal center M; L is an aromatic polythiol ligand; IL is an ionic liquid; x, y, and z are all integers ≥1. This invention uses an ionic liquid as a reaction medium and combines it with a competitive coordination control strategy of organic amines to achieve controllable self-assembly of organometallic cages. These organometallic cages have unique melting and glass transition characteristics, can be used to prepare high-quality thin films through hot pressing film deposition technology, and can also be used as photoresist film deposition materials in various photolithography processes. They have broad application prospects in flexible electronics, packaging materials, micro-nano fabrication, and other fields.

This invention belongs to the field of micro / nano fabrication and optical testing technology, specifically relating to a high-resolution test card for dielectric materials in the EUV and soft X-ray bands. The test card includes a substrate and a Siemens star test pattern formed thereon. The test card uses silsesquioxane (HSQ) as the structural material and is fabricated using electron beam lithography. The structural height can reach 500 nm with a minimum linewidth of 10 nm. This invention utilizes the dual absorption and strong phase modulation capabilities of HSQ in the EUV / soft X-ray bands, making it suitable for both absorption contrast and phase contrast imaging modes in system resolution calibration and performance evaluation. This test card offers advantages such as standardized patterns, high resolution, adjustable contrast, and good fabrication consistency, providing crucial metrological support for the performance testing of high-end EUV / soft X-ray optical imaging and lithography systems.

The invention discloses a method for detecting biomolecules, and relates to the technical field of micro-nano processing technology and LSPR biosensors. An existing LSPR sensor is low in sensitivity and large in spectral formant line width, and an existing MIM structure is complex in machining process, high in cost, tedious in modification step and insufficient in sensing performance stability. A metal-gap-metal composite structure is constructed, a pair of sensing chips is prepared, each sensing chip comprises a quartz substrate and an LSPR gold nanostructure array, a supporting structure is formed on the quartz substrate, buckling assembly is performed to accurately control the distance to form an MIM resonant cavity, and the active regulation and control of the electric field intensity are realized by combining biological modification and detection methods. The sensitivity of the sensor is remarkably improved, the spectral formant line width is reduced, the process is simplified, the cost is reduced, the stability is improved, and the sensor is used for detecting trace tumor marker antigens.

Collimating superlenses and their design methods, and collimation systems based on collimating superlenses, are disclosed. The collimation system includes a VCSEL array and a collimating superlens array. The VCSEL array comprises several VCSEL units; the collimating superlens array comprises several collimating superlenses, which are arranged in a one-to-one correspondence with the VCSEL units to collimate the emitted beams of the VCSEL units. The collimating superlenses are composed of amorphous silicon cylinders of different radii, the radius of each amorphous silicon cylinder being determined according to the position and phase of each position of the collimating superlens, so that the amorphous silicon cylinders of different radii are arranged according to the position and phase distribution of the collimating superlenses. By employing a collimating superlens design method with a specific phase distribution, the limitations of traditional curvature radius processing are overcome. The arrangement of amorphous silicon cylinders with specific radius dimensions replaces the curved surface distribution of traditional optical convex lenses, and collimation performance is improved based on high-precision micro / nano fabrication technology.

This invention relates to a near-infrared detector array based on two-dimensional noble metal chalcogenides, its fabrication method, and its applications, belonging to the field of image sensor technology. First, an underpotential deposition method is used to drive noble metal atoms to self-confinedly deposit on the silicon substrate surface using the potential difference between the noble metal and the silicon substrate, obtaining a wafer-level noble metal thin film. Then, chemical vapor deposition is used to sulfide, selenize, or tellurize the wafer-level noble metal thin film, transforming it in situ into a wafer-level two-dimensional noble metal chalcogenide thin film. Finally, a near-infrared detector array is fabricated using micro-nano fabrication processes. The two-dimensional noble metal chalcogenide near-infrared detector of this invention possesses advantages such as good mechanical flexibility, high mobility, and excellent stability, significantly improving the detector's detection performance.

According to the post-preparation chemical heat treatment method for the high-temperature superconductive Josephson junction, the high-temperature superconductive Josephson junction is annealed in the preset atmosphere, migration and composition of oxygen lattice vacancies are promoted, the microstructure of a barrier layer is optimized, lattice damage in micro-nano machining is repaired to a certain extent, and the performance of the high-temperature superconductive Josephson junction is improved. Therefore, the critical current of the high-temperature superconductive Josephson junction is remarkably improved, the normal resistance is properly reduced, the characteristic voltage is further improved, and meanwhile, the intrinsic transmission mechanism of the high-temperature superconductive Josephson junction is not changed. The problems that in the prior art, the oxygen lattice vacancy defect of the high-temperature superconducting Josephson junction is unstable, a transition area with gradient change of superconducting characteristics is possibly formed in the preparation process, the characteristic voltage is reduced, and then the performance parameters, batch consistency and stability of the device are affected are solved.

The invention relates to the technical field of pulse laser micro-nano manufacturing. The accurate micro-nano hole making device comprises a light source system, a micro-nano hole making device and a micro-nano hole making device, the acousto-optic off-axis adjusting module is arranged on an emergent optical axis of the light source system; the acousto-optic angle deflection module is arranged on an emergent optical axis of the acousto-optic off-axis adjusting module; the three-mirror rotating light cylinder is arranged on an emergent optical axis of the acousto-optic angle deflection module; the dichroscope is arranged on an emergent optical axis of the three-mirror rotating light cylinder; the monitoring camera module is arranged above the dichroscope, and the three-axis machining platform is arranged below the dichroscope; the first radio frequency signal generator is electrically connected with the acousto-optic off-axis adjusting module, and the second radio frequency signal generator is electrically connected with the acousto-optic angle deflection module; and the upper computer control system is electrically connected with the monitoring camera module, the first radio frequency signal generator and the second radio frequency signal generator. The problems of large inertia, slow response and the like of a traditional mechanical structure such as a galvanometer or a rotating mirror are solved.

The invention provides a defect marking method and system based on piezoelectric ceramic driving, a medium and equipment, and relates to the technical field of precise micro-nano machining, and the method comprises the steps: obtaining the coordinate of each defect point of a to-be-treated plate; the XY moving platform is controlled to move the current defect point to the position under a pressing head of a defect marking device according to the coordinates of the current defect point; acquiring the distance between the current defect point and the tip of the pressure head; a z-axis driver of the defect marking device is controlled to drive a pressing head to press downwards, so that the pressing head makes contact with the surface of the to-be-treated plate and does not damage the surface of the to-be-treated plate; and according to the hardness of the to-be-treated plate and the preset defect marking duration, the pressing head is controlled to imprint the to-be-treated plate according to the first defect marking mode or the second defect marking mode. According to the method, nanoscale impressing precision and controllable impressing morphology are achieved, the problem that the effect is difficult to achieve through traditional mechanical impressing is solved, and the method further has high repetition precision and can be compatible with various film materials with different hardness.

This invention provides a micro / nano fabrication device, a design method for a fabrication probe, and a fabrication method based on near-field thermal radiation technology. The device includes: an xy-plane high-precision moving platform, a fabrication probe, and a z-axis high-precision displacement platform. The xy-plane high-precision moving platform and the z-axis high-precision displacement platform are positioned opposite each other. The fabrication probe is fixed below the z-axis high-precision displacement platform. The sample to be processed is placed above the xy-plane high-precision moving platform and positioned opposite the fabrication probe. The fabrication probe includes a quartz glass substrate, a frustum-shaped separator medium, a double-helix metal wire electrode, and a pattern to be processed. The double-helix metal wire electrode is disposed on the upper surface of the quartz glass substrate, the frustum-shaped separator medium is disposed on the outer periphery of the lower surface of the quartz glass substrate, and the pattern to be processed is disposed at the center of the lower surface of the quartz glass substrate. Compared with traditional photolithography processes, this method reduces processing costs while improving processing efficiency.

The invention belongs to the field of micro-nano machining and manufacturing, and particularly relates to a line scanning two-photon machining system based on femtosecond laser time multiplexing. The system comprises a femtosecond laser light source, a scanner, a dodging and focusing device, a dispersion mask device, a relay projection device and a displacement table which are sequentially arranged along a light path, different time delays are introduced at different positions of the linear light spots between the uniform light focusing device and the dispersion mask device or between the dispersion mask device and the relay projection device, so that light rays at different positions of the linear light spots reach the relay projection device at different times, and time multiplexing is formed; according to the method, certain delay is introduced to each point of the linear light spot, mutual interference of spectral components of each point on the linear light spot line is fundamentally reduced, meanwhile, the delay effectively reduces the influence of proximity effect, the problem of mutual interference among the points in parallel processing can be effectively reduced, and the processing precision is improved. And the parallel processing resolution is improved while the processing efficiency is ensured.

The invention provides an in-situ detection and illumination system and a micro-nano processing method, which can be applied to the technical field of exposure illumination. The system comprises an objective lens, an ultraviolet illumination assembly, a visible light illumination assembly, an imaging observation assembly and an in-situ detection assembly, wherein multiple paths of light are coupled to the same objective lens through a first spectroscope, a second spectroscope and a third spectroscope. The ultraviolet illumination assembly is used for exposure, the visible light illumination assembly provides observation illumination, the imaging observation assembly is used for alignment observation, and the in-situ detection assembly collects interference spectrums through the receiving optical fiber set to achieve real-time leveling. The system further comprises a particle detection module which is used for detecting and screening pollution on the surface of the substrate before exposure. Through multi-light-path integration and intelligent control, the integration of exposure, in-situ detection, alignment and pollution detection functions is realized, and the integration level, the process reliability and the pattern transfer precision of the photoetching system are remarkably improved.

This invention relates to a method for fabricating horizontal heterojunction photodetector matrices based on single-crystal nanoribbons, belonging to the field of nanomaterials and optoelectronic devices. A two-step chemical vapor deposition process is employed: first, a first type of single-crystal nanoribbon array is directionally grown on a single-crystal substrate with a stepped surface; then, using this as a template, a second material is epitaxially grown along the lateral edges of the nanoribbons, directly forming a large-area, oriented, continuous single-crystal horizontal heterojunction nanoribbon array. This avoids material damage at the heterojunction interface caused by traditional patterning processes, achieving high-quality, high-uniformity, and controllable interface fabrication. The nanoribbon array is then segmented into a high-density discrete PN junction matrix using micro / nano fabrication techniques, and electrodes are fabricated to construct the photodetector matrix. This achieves controllable growth of a high-quality single-crystal heterojunction array and efficient integration of the optoelectronic device matrix. The resulting device exhibits advantages such as high pixel density, no crosstalk between units, low dark current, and fast response, providing a feasible solution for ultra-high resolution optoelectronic integrated systems.

The invention discloses a preparation method of a carbon nanotube sensor adopting a low-cost evaporation process and a method for detecting Hg < 2 + > by using the sensor, and the preparation method of the carbon nanotube sensor adopting the low-cost evaporation process comprises the following steps: S1, cleaning and preparing a silicon oxide sheet; s2, growing and preparing a carbon nano tube; s3, copper net attachment and electrode evaporation; s4, preparing a nano gap; s5, carrying out functional modification on the sensor; the preparation cost is low, the process is simple and convenient, an evaporation process is adopted to prepare the electrode, traditional expensive micro-nano machining technologies such as EBL and FIB are replaced, and the preparation cost is greatly reduced; meanwhile, the process of forming the nano gap by triggering electric breakdown of the carbon nano tube through voltage stress is simple and convenient to operate, high in controllability and beneficial to large-scale production; the prepared sensor has high sensitivity and high selectivity when used for detecting Hg < 2 + >, the current tends to be stable after the sensor is soaked in ultrapure water and a 1 * PBS solution for 90 min, the stability is good, and the requirement for accurate detection of trace Hg < 2 + > can be met.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

This invention relates to a hyperbolic geometric phase lens with dual focal lines. It utilizes micro-nano fabrication technology to construct the microstructure of the hyperbolic geometric phase diffraction lens, ensuring it conforms to the phase distribution of a hyperbolic function. By exhibiting the optical characteristics of a hyperbolic lens through geometric phase, it focuses left-handed and right-handed circularly polarized light onto two mutually perpendicular lines, thus achieving a planar hyperbolic lens with dual focal line characteristics. Compared to existing technologies, this invention can focus left-handed and right-handed circularly polarized light onto two mutually perpendicular directions. By setting different focal length parameters for the two perpendicular directions, the fabricated device can also focus beams of different circularly polarized states onto focal lines at different distances, with the two focal lines formed being mutually perpendicular. Utilizing the device's different responses to different circularly polarized states, and the diffraction pattern presenting two distinctly different perpendicular intersecting lines concentrated in the central region, the polarization state of the original incident light can be analytically determined.

The invention belongs to the technical field of micro-nano electronic devices and cranial nerve-like morphological calculation, and particularly relates to an ionic liquid double-electric-layer nerve synapse-like transistor and a preparation method thereof. The neuro-synapse-like transistor comprises a substrate Si / SiO2 used for bearing a channel layer and an electrode structure; the channel layer WO3 thin film is arranged on the surface of the SiO2 layer; the source electrode and the drain electrode are formed at the two ends of the channel layer respectively and are in ohmic contact with the channel layer, and a channel between the source electrode and the drain electrode serves as a channel; the gate electrode is arranged on one side of the channel; and the ionic liquid layer covers the surface of the channel layer in the channel and is in contact with the gate electrode. According to the method, semiconductor device physics, interface electrochemistry and micro-nano processing technologies are fused, and low-voltage and high-sensitivity adjustment of channel carrier density is realized through high-specific-capacitance double electric layers formed on a solid-liquid interface by the ionic liquid, so that short-time and long-time plasticity behaviors of biological synapses are simulated.

This invention belongs to the field of quartz resonator technology, specifically to a high-frequency quartz resonator wafer and its manufacturing process. It includes a wafer body with grooves on both sides. A vibration electrode is positioned at the center of the bottom of each groove, and the vibration electrode is connected to a surface electrode via wiring. The surface electrode is connected to an electrode excitation area. This invention provides two manufacturing processes for electrodes made of different materials: the first uses a photolithography-etching-sputtering micro-nano fabrication process to manufacture a high-frequency quartz resonator wafer with gold-chromium composite electrodes. The second method, based on the first, modifies the electrode material system and deposition method, using a solution deposition method with multi-component composite electrode ink. The quartz resonator wafer prepared by this invention can achieve frequencies exceeding 200MHz and can be easily packaged.

This invention relates to a high-performance, fast-curing nanoimprint adhesive and its preparation method, belonging to the field of micro / nano fabrication materials technology. This invention provides a nanoimprint adhesive using surface-modified nano-zirconia as a functional filler. The adhesive comprises modified epoxy acrylate resin, fluorosilicone-modified acrylate, expanding monomers, multifunctional crosslinking agents, photoinitiators, and specially surface-treated nano-zirconia particles. Through the surface modification treatment of nano-zirconia and its synergistic effect with the organic resin matrix, the nanoimprint adhesive prepared by this invention achieves high refractive index (≥1.65), high light transmittance, and excellent pattern fidelity while maintaining rapid curing, low volume shrinkage, and easy demolding properties. It is particularly suitable for the manufacture of high-value-added products such as optical components, photonic crystals, and AR / VR waveguide sheets.

The invention discloses a preparation technology of a high-temperature superconducting diode device structure, and particularly relates to the technical field of superconducting electronic devices and micro-nano machining, and the preparation technology comprises the steps: preparing an on-chip magnetic field generation unit on a substrate, and forming an insulation isolation layer above the on-chip magnetic field generation unit; transferring and fixing a high-temperature superconducting material sheet on the surface of the insulating isolation layer, forming a metal electrode layer on the surface of the sheet, and constructing a micro-bridge asymmetric structure; and forming a side wall passivation packaging layer on the surface of the device, and windowing an electrode lead-out area to realize interconnection. After the device is prepared, factory closed-loop calibration is executed by taking coil driving current as control quantity under a low-temperature condition, forward and reverse critical current is obtained through bidirectional sampling, feedback quantity is constructed, and an optimal working window is determined by adopting coarse scanning and fine scanning adaptive iteration; when it is detected that peak position deviation or feedback quantity deviation exceeds a threshold value, re-calibration is triggered, and finally the parameter set is solidified to serve as a factory acceptance basis.

This invention belongs to the field of micro / nano fabrication technology, specifically a method for preparing a diamond color center array based on a phase-separated nanomask. The invention includes two schemes: Scheme 1 includes: pretreatment of diamond raw material; deposition of a hard mask layer on the diamond surface; coating an adhesive layer; coating with a phase-separable patterned block copolymer or a polymeric material such as a biomolecule that can be assembled; annealing the diamond; selectively etching the surface film to form a nanomask; nitrogen ion implantation to form an NV color center array; removing the hard mask; and removing surface carbon impurities through vacuum high-temperature annealing and acid washing to obtain a high-quality color center array. Scheme 2 simplifies the hard mask deposition steps by directly coating a thick film of a phase-separable patterned polymeric material onto the diamond raw material surface. This invention achieves low-cost, high-mask precision and resolution, high-throughput scalability, and large-area nanomask ion implantation color center array preparation by employing two different process flows.

The invention discloses a method for preparing an escape wheel through etching, and belongs to the technical field of micro-nano machining. According to the technical scheme, the method comprises the steps that a thin silicon wafer with the target thickness is provided, and a soft mask is prepared on one face of the thin silicon wafer; bonding one surface, deviating from the soft mask, of the thin silicon wafer on a substrate through heat-conducting liquid to obtain a bonding sheet; etching one side of the soft mask on the bonding sheet so as to cut through the thin silicon sheet to form an escape wheel structure; and dissolving and removing the heat-conducting liquid on the adhesive sheet to obtain the free escape wheel. The heat conduction liquid is adopted for good heat conduction, and the flexible liquid middle layer is also beneficial to collection of the etched escapement wheel parts. According to the method, residual glue which is not easy to remove and is brought to parts by using methods such as bonding is avoided, a glue pasting phenomenon caused by poor heat conduction due to etching penetration is reduced, and a solution is provided for preparing large-batch and high-yield escapement wheel devices.

This invention provides a method for fabricating a device for measuring the mechanical loss of epitaxial single-crystal thin films and a method for measuring the mechanical loss of epitaxial single-crystal thin films at low temperature, belonging to the field of semiconductor micro-nano fabrication technology. The fabrication method includes: growing an epitaxial single-crystal thin film on the front side of an epitaxial substrate using molecular beam epitaxy to obtain an epitaxial substrate with the epitaxial single-crystal thin film on the front side; performing a coating process on the back side of the epitaxial substrate to compensate for stress on the warpage of the epitaxial single-crystal thin film; directly bonding the surface of the epitaxial single-crystal thin film away from the epitaxial substrate to a cantilever substrate to form a bonding pair, obtaining a composite material; removing the stress compensation film and the epitaxial substrate from the side of the epitaxial single-crystal thin film away from the cantilever substrate in the composite material to obtain the device; the cantilever substrate is made of single-crystal silicon, the epitaxial substrate is a group III-V semiconductor single-crystal substrate, and the epitaxial single-crystal thin film is a group III-V semiconductor single-crystal thin film.

This invention relates to the field of holographic-controlled femtosecond laser micro / nano fabrication technology, and in particular to a flexible holographic femtosecond laser fabrication system and method for overcoming the diffraction limit. The system includes: a laser; an optical path system comprising, sequentially arranged along the laser emission direction, an optical shutter, a beam expander, a first half-wave plate, a first polarizing beam splitter, two laser beam paths, a second polarizing beam splitter, a 4f optical system, an aperture, and a focusing objective; each laser beam path includes a spatial light modulator along the laser emission direction; and a motion platform for clamping, moving, and positioning the material to be processed, positioned in the direction of laser emission from the focusing objective. This invention, by modulating the shape of the laser spot, can achieve two laser spots of arbitrary shapes. By controlling the overlap range of the laser spots and utilizing the principle of phase overlap and energy superposition, material removal is achieved in the overlapping area, ultimately realizing flexible and diverse fabrication of micro / nano structures at sub-diffraction-limit scales.

This invention provides an integrated resistance-of-thermal scanning thermal probe and its fabrication method, belonging to the fields of micro / nano fabrication, nanoscale thermal characterization, and scanning probe technology. The integrated resistance-of-thermal scanning thermal probe of this invention includes a substrate, an oxide layer, a low-resistivity silicon layer, a probe arm, a tip, and a metal electrode. Based on an AFM probe, this invention employs a probe arm separation structure and fabricates electrodes on the separated probe arms to inject current into the probe. Furthermore, this invention uses an ion implantation process to form a high-implantation, low-resistivity region outside the tip, while the tip region is a high-resistivity region without implantation. This ensures that most of the injected electrical energy is generated as heat in the tip region, creating a significant temperature difference between the tip and the sample being measured, facilitating the measurement and determination of the sample's temperature. The tip size of this invention can be reduced to below 10 nanometers, and the scanning thermal probe fabricated by this invention can provide a nanoscale temperature distribution.