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35 results about "Nano fabrication" patented technology

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Laser differential confocal LIBS, Raman spectrum-mass spectrum imaging method and Raman spectrum-mass spectrum imaging device

The invention relates to a laser differential confocal LIBS, a Raman spectrum-mass spectrum imaging method and a Raman spectrum-mass spectrum imaging device and belongs to the technical fields of confocal microscopy imaging, mass spectrum imaging and spectral measurement. In the invention, the differential confocal microscopy imaging technology is combined with a spectrum and mass spectrum detection technology; a high-spatial-discrimination differential confocal system is used for axially focusing and imaging a sample; a mass spectrum detection system is used for performing mass spectrum detection to charged molecules and atoms in a sample microcell; and a spectral detection system is used for performing microcell spectrum detection to focal spot excitation spectrums (Raman spectrum and induced breakdown spectrum) of a differential confocal microscopy system, thereby achieving high-spatial discrimination and high-sensitivity imaging and detection of complete component information and configuration parameters of the sample microcell. The invention achieves advantage complement and structure and function fusion of laser poly-spectrum component imaging detection (mass spectrum, Raman spectrum and laser-induced breakdown spectrum). The method and the device have wide application prospect in the fields of biology, physical chemistry, micro-fabrication and nano-fabrication and the like.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Laser confocal Brillouin-Raman spectral measurement method and apparatus

The invention belongs to the technical field of microscopic imaging and spectral measurement and relates to a high resolution spectral imaging and detection method and apparatus which combine confocal microscopic technology and spectral detection technology together, realize integration of images and spectrums and are used for three dimensional morphology reconstruction and micro-area morphological performance parameter measurement of a variety of samples. The method and apparatus utilize Rayleigh light abandoned by a traditional confocal Raman system and confocal technology for detection of the position of a sample, employs a spectral detection system for spectral detection and uses Brillouin diffusion light abandoned by a traditional confocal Raman detection technology to test properties like elasticity and piezoelectricity of a material, thereby realizing measurement of micro-area high spatial resolution morphological parameters of a sample. The method and apparatus provided by the invention have the advantages of accurate positioning, high spatial resolution, high spectral detection sensitivity, controllable measured spot size, etc. and have wide application prospects in fields like biomedicine, evidence collection of court, micro and nano-fabrication, material engineering, engineering physics, precise metering and physical chemistry.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Laser differential confocal Brillouin-Raman spectroscopy measuring method and device thereof

The invention belongs to the field of a microimaging and spectral measurement technology and relates to a laser differential confocal Brillouin-Raman spectroscopy measuring method and a device thereof which can be used in micro-area morphological parameter comprehensive test and high-resolution imaging of a sample. According to the method and the device, a differential confocal technology is incorporated into spectrum detection. Sample position detection is performed by the differential confocal technology; spectrum detection is conducted by a spectrum detection system; and properties, such as elasticity, piezoelectricity and the like, of a material are tested by the use of brillouin scattering light abandoned by a traditional confocal Raman spectrum detection technology. Thus, micro-area high-spatial resolution morphological parameter measurement of a sample is realized. The method and the device have advantages of accurate positioning, high spatial resolution, high spectrum detection sensitivity, controllable measured focusing spot size and the like, and have a wide application prospect in fields of biomedicine, evidence obtaining in court, micro and nano-fabrication, materials engineering, engineering physics, precision metrology, physical chemistry and the like.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Electron beam aligning mark based on hafnium oxide and manufacturing method of mark

The invention discloses an electron beam aligning mark based on hafnium oxide, which belongs to the field of micro and nano fabrication of a semi-conductor device. The electron beam aligning mark based on hafnium oxide comprises a substrate and a hafnium oxide thin film mark plated on the substrate. The invention further provides a manufacturing method which specifically comprises the steps of: (1) cleaning the substrate; (2) carrying out spin coating of an electronic resist on the substrate and forming a pattern array with an aligned mark in the electronic resist through an electron beam photolithography technique; (3) evaporating hafnium oxide thin films on the electronic resist and the substrate; and (4) peeling the hafnium oxide thin films attached to the positive electronic resist to obtain the hafnium oxide mark. The aligned mark obtained by the electron beam lithography is prepared by using hafnium oxide which is high temperature resistive, good in adhesion and low in cost. Compared with the conventional 'titanium+gold' marks, the process cost is reduced, the problem that the gold mark and the Si substrate are not adhered well is solved, the adhesion and high temperature bearing capacity of the aligned mark to the substrate are improved, and the higher aligning precision is maintained.
Owner:HUAZHONG UNIV OF SCI & TECH

Electron diffractometer capable of realizing automatic defect regulation

The invention relates to an electron diffractometer and provides an electron diffractometer capable of realizing automatic defect regulation. The electron diffractometer comprises a vacuum sample room, and also comprises a testing optical path, a detect regulation optical path and a processing unit. Frequency tripled laser of the testing optical path is transmitted from a first incidence window into the vacuum sample room. Frequency doubled laser of the defect regulation optical path is transmitted from a second incidence window into a sample stage inside the vacuum sample room. An electronicgun is also arranged inside the vacuum sample room. A cathode of the electronic gun is positioned on the testing optical path. The defect regulation optical path is provided with a laser pulse energyregulator and a laser pulse scanning device. The processing unit comprises a receiving component and a control center. The electron diffractometer of the invention can achieve in-situ real-time nondestructive measurement of the micro- and nano-fabrication process and realize growth while testing. In addition, sample surface defect information is obtained through processing of diffraction images, and femtosecond laser pulse energy and scanning position are regulated according to the invention so as to repair defects, thus achieving the purpose of testing while regulating.
Owner:WUHAN UNIV

Test analysis method for manufactured super-diffraction directional transmission material structure

The invention discloses a test analysis method for a manufactured super-diffraction directional transmission material structure. The test analysis method comprises the following steps of: obtaining a nano slit or pore structure mask on a transparent substrate by a nano-fabrication method; depositing a metal medium alternate multi-layer film structure material on the flattened nano slit or pore structure mask; roughening a surface film material through an etching or grinding method, and finishing structure manufacture; illuminating the slit or pore through a light source, exciting a surface plasma evanescent wave light field, and alternately coupling the light field into the multi-layer metal medium film material, wherein the surface plasma light field is specifically distributed on the outermost layer of a metal medium film layer material, is scattered to a far field by the roughened surface and is observed and recorded through an objective lens and a charge coupled device (CCD); and finally, calculating a directional transmission angle theta of the super-diffraction material. By the test analysis method, the high-frequency evanescent wave energy is conveyed to the far field and then detected and analyzed in the far field, and the quantitative analysis and characterization requirements of the optical properties of the super-diffraction material can be met in a far field range.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI

A method and system for micro-nano electrical discharge machining of micro-three-dimensional structures

The invention belongs to the technical field of micro-nano manufacturing, and relates to a method for micro-nano electric discharge machining of a micro-three-dimensional structure: (1) fixing conductive nanowires or nanotubes on probe tips made of conductive materials as electrodes; (2) ) place the electrode clamping device on the displacement platform, and control the movement of the displacement platform through the multi-axis motion controller; (3) place the conductive material workpiece on the X / Y precision displacement platform, and use the multi-axis motion controller to control the movement of the displacement platform; Control the movement of the X / Y precision translation stage; (4) Connect the negative pole of the pulse power supply to the probe, and its positive pole to the workpiece; (5) Use the industrial computer to send instructions to the multi-axis motion control card to control the placement of electrodes The displacement table of the clamping device is provided with the working voltage of the discharge machining by the pulse power supply, and the discharge gap voltage is collected by the gap voltage detection device, and the industrial computer controls the movement of the electrode feeding displacement table according to the gap voltage. The invention enables the size of electric discharge machining to reach micron and nanometer levels, and simultaneously solves the chip removal problem in the machining process.
Owner:TIANJIN UNIV

Modularized sealed device for preparing film through spatial isolation atomic layer deposition

The invention belongs to the related field of micro and nano fabrication, and particularly discloses a modularized sealed device for preparing a film through spatial isolation atomic layer deposition.The device comprises a moving device, a spray head device, a sealing device and a reaction device, wherein the moving device is used for driving the sealing device and the reaction device to move along a horizontal rail and driving the spray head device to move in the vertical direction; a sealing cavity of the spray head device is connected with a lifting table; a sealing cavity cover plate is fixed above the sealing cavity; a modularized spray head is fixed below the sealing cavity; the sealing device and the spray head device are in sealing fit; and the reaction device is arranged below the spray head device to do reciprocating motion to realize the spatial isolation atomic layer deposition. The reaction device is arranged below the spray head device to do reciprocating motion to realize spatial isolation atomic layer deposition; and when atomic layer deposition is not performed, the sealing device is moved to a part below the spray head device to seal the spray head device to ensure the vacuum degree of the spray head device so as to realize the modularized sealing.
Owner:HUAZHONG UNIV OF SCI & TECH

A transmission type full Muller matrix spectroscopic ellipsometer and its measuring method

ActiveCN103134592BAccurate measurementDoes not change polarization statePolarisation spectroscopyNon destructiveNano structuring
The invention discloses a transmission type Mueller matrix spectrum ellipsometer and a measuring method thereof. The transmission type Mueller matrix spectrum ellipsometer measuring method comprises the following steps: projecting modulation rays produced by a partial arm on the surface of a to-be-tested sample, a check partial arm demodulates and receives the rays reflected (or transmitted) by the to-be-tested sample, by proceeding harmonic wave analysis to a tested spectrum, computing and acquiring the full Mueller matrix information of the to-be-tested sample, further through arithmetic of nonlinear regression, liberty matching, and the like, and fitting and extracting information of an optical constant, characteristic, morphology, size and the like of the to-be-tested sample. An ellipsometer comprises the partial arm (comprises light source, a lens group, a polarizer, and a compensator driven by a servo motor),the to-be-tested sample and the check partial arm (comprises the compensator driven by a servo motor, an analyzer the lens group and a spectrograph. The transmission type Mueller matrix spectrum ellipsometer and the measuring method thereof can achieve all kinds of materials and components with information phoelectron functions, and online measurement of all kinds of nano-structures in nano-fabrication, so that transmission type Mueller matrix spectrum ellipsometer and the measuring method thereof have the advantages of being capable of possessing non-destructive property, fast, and low in cost.
Owner:WUHAN EOPTICS TECH CO LTD

Device and method capable of precisely controlling and transmitting nanowire

ActiveCN109911848APrecision ControlPrecision transferNanostructure manufactureNanowireFemtosecond pulsed laser
The invention discloses a device and a method capable of precisely controlling and transmitting a nanowire, and relates to the technical field of micro and nano-fabrication. The device comprises a femtosecond pulse light source, a microscope objective, a silver film-coated first glass sheet, a second glass sheet and an alternating-current power supply. The method comprises the following steps: firstly, focusing femtosecond pulse laser emitted by the femtosecond pulse light source by the microscope objective and then irradiating on the silver film to form a silver film gap; secondly, connectingthe alternating-current power supply with the two ends of the silver film gap, dropping a nanowire solution on the silver film gap to orientally arrange the nanowires at the two ends of the silver film gap, and reversing the first glass sheet; and thirdly, focusing the emitted femtosecond pulse laser by the microscope objective and then irradiating on one side, without being coated with the nanowire, of the first glass sheet to transfer the nanowire from the first glass sheet to the second glass sheet. Through the combination of a dielectrophoresis technology and a laser induced forward transfer technology taking graphene oxide as a dynamic release layer, precise control and nanowire transmission can be realized simply, conveniently and rapidly.
Owner:HUNAN CITY UNIV

Special fixture applied to aluminum thick film resistivity method vacuum evaporation device

The invention belongs to the technical field of micro and nano-fabrication, and provides a special fixture applied to an aluminum thick film resistivity method vacuum evaporation device. The special fixture is of a bilateral symmetry structure and comprises a left clamp, a left electrode, a first tungsten wire cover plate, a first tungsten wire, a second tungsten wire, aluminum rings, a second tungsten wire cover plate, a right electrode and a right clamp; the use amount of used evaporation source aluminum rings is 2.5 times that of aluminum rings before transformation, after the use amount ofthe evaporation source aluminum rings is increased, the limit thickness of one-time evaporation can be increased to the micrometer scale from few hundred nanometers, and through increasing of the useamount of evaporation source aluminum rings, the limit thickness of a coating film is obviously improved; when the transformed clamps and tungsten wires are used for evaporating the aluminum film, the distance between a sample and an evaporation source is increased, the included angle between the sample and the evaporation source is 71.4 degrees, at the time, the single-time aluminum film evaporation limit thickness is the micrometer scale, and the clamp can achieve the aim of evaporating the aluminum thick film.
Owner:DALIAN UNIV OF TECH

A device and method for precisely manipulating and delivering nanowires

The invention discloses a device and a method capable of precisely controlling and transmitting a nanowire, and relates to the technical field of micro and nano-fabrication. The device comprises a femtosecond pulse light source, a microscope objective, a silver film-coated first glass sheet, a second glass sheet and an alternating-current power supply. The method comprises the following steps: firstly, focusing femtosecond pulse laser emitted by the femtosecond pulse light source by the microscope objective and then irradiating on the silver film to form a silver film gap; secondly, connectingthe alternating-current power supply with the two ends of the silver film gap, dropping a nanowire solution on the silver film gap to orientally arrange the nanowires at the two ends of the silver film gap, and reversing the first glass sheet; and thirdly, focusing the emitted femtosecond pulse laser by the microscope objective and then irradiating on one side, without being coated with the nanowire, of the first glass sheet to transfer the nanowire from the first glass sheet to the second glass sheet. Through the combination of a dielectrophoresis technology and a laser induced forward transfer technology taking graphene oxide as a dynamic release layer, precise control and nanowire transmission can be realized simply, conveniently and rapidly.
Owner:HUNAN CITY UNIV

Electron beam overlay marking based on hafnium dioxide and its manufacturing method

The invention discloses an electron beam aligning mark based on hafnium oxide, which belongs to the field of micro and nano fabrication of a semi-conductor device. The electron beam aligning mark based on hafnium oxide comprises a substrate and a hafnium oxide thin film mark plated on the substrate. The invention further provides a manufacturing method which specifically comprises the steps of: (1) cleaning the substrate; (2) carrying out spin coating of an electronic resist on the substrate and forming a pattern array with an aligned mark in the electronic resist through an electron beam photolithography technique; (3) evaporating hafnium oxide thin films on the electronic resist and the substrate; and (4) peeling the hafnium oxide thin films attached to the positive electronic resist to obtain the hafnium oxide mark. The aligned mark obtained by the electron beam lithography is prepared by using hafnium oxide which is high temperature resistive, good in adhesion and low in cost. Compared with the conventional 'titanium+gold' marks, the process cost is reduced, the problem that the gold mark and the Si substrate are not adhered well is solved, the adhesion and high temperature bearing capacity of the aligned mark to the substrate are improved, and the higher aligning precision is maintained.
Owner:HUAZHONG UNIV OF SCI & TECH
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