Electron beam aligning mark based on hafnium oxide and manufacturing method of mark

Abstract

The invention discloses an electron beam aligning mark based on hafnium oxide, which belongs to the field of micro and nano fabrication of a semi-conductor device. The electron beam aligning mark based on hafnium oxide comprises a substrate and a hafnium oxide thin film mark plated on the substrate. The invention further provides a manufacturing method which specifically comprises the steps of: (1) cleaning the substrate; (2) carrying out spin coating of an electronic resist on the substrate and forming a pattern array with an aligned mark in the electronic resist through an electron beam photolithography technique; (3) evaporating hafnium oxide thin films on the electronic resist and the substrate; and (4) peeling the hafnium oxide thin films attached to the positive electronic resist to obtain the hafnium oxide mark. The aligned mark obtained by the electron beam lithography is prepared by using hafnium oxide which is high temperature resistive, good in adhesion and low in cost. Compared with the conventional 'titanium+gold' marks, the process cost is reduced, the problem that the gold mark and the Si substrate are not adhered well is solved, the adhesion and high temperature bearing capacity of the aligned mark to the substrate are improved, and the higher aligning precision is maintained.

Description

technical field [0001] The invention belongs to the field of micro-nano manufacturing of semiconductor devices, and in particular relates to an electron beam lithography overlay mark based on hafnium dioxide and a manufacturing method thereof. Background technique [0002] The semiconductor technology with Complementary Metal Oxide Semiconductor (CMOS, Complementary Metal Oxide Semiconductor) process as the mainstream continues to develop rapidly along "Moore's Law". More and more stringent requirements are put forward for the accuracy of the semiconductor process. Only by minimizing the accuracy error of each link in the process can the device failure caused by the error be reduced. [0003] The electron beam lithography system plays an increasingly important role in the micro-nano manufacturing process of semiconductor devices due to its advantages of high precision and no need for masks. In the micro-nano manufacturing of semiconductor devices, the manufacture of a devic...

AI Technical Summary

Problems solved by technology

However, the "titanium + gold" mark also has its disadvantages: the price of gold target is very expensive; the adhesion between gold and silicon substrate is very poor, and titanium plating is needed to adhere gold and silicon together; the melting point of gold is 1063 ° C, If the sample needs to be used in high-temperature thermal oxidation or epitaxial growth processes, metal melting deformation and metal diffusion will occur, and then the cavity of oxidation or epitaxial growth will be polluted, which will bring very serious consequences.

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