71 results about "Hafnium dioxide" patented technology

The present disclosure provides a new wet atomic layer etch (ALE) process for etching high-k dielectric materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching transition metal oxide dielectric materials in a cyclic wet ALE process. In the example embodiments provided herein, new etch chemistries and methods are provided for etching zirconium dioxide (ZrO2), hafnium dioxide (HfO2) and HfxZr(1-x)O2 dielectrics in a cyclic wet ALE process. However, the wet ALE techniques described herein are not strictly limited to the example materials discussed herein and can be applied to other transition metals and transition metal oxides.

The present invention discloses an abnormal thermal quenching near-infrared fluorescent ceramic and its preparation method and application. The chemical formula of the fluorescent ceramic is: (Lu 0.34+z Y 0.66‑y‑z Sc y )3(Sc 0.85‑x Al 0.15 Cr x )2Al3O 12 , 0.0005≤ x ≤0.02, x : y =1:(5‑10), x : z =1:(10‑20). y Sc 3+ The mole percentage of dodecahedral sites occupied, x Cr ions occupy the octahedron Sc 3+ The molar percentage of the lattice site. z is the Lu in the dodecahedron 3+ The molar percentage of the metering control. The ceramic green body is formed and sintered by using the acrylamide gel injection molding method combined with high temperature solid phase reaction. The luminescent center ion in the ceramic of the present invention presents a +3 valence state under the influence of the matrix microenvironment regulator (calcium carbonate, magnesium oxide and zirconium oxide, silicon dioxide, hafnium dioxide). The excitation peak of the ceramic is between 430nm-460nm, the half-height width is between 90nm-130nm, and the half-height width is between 150nm-160nm. o The luminous intensity at 200°C is 105%-165% of the room temperature. o The luminescence intensity at 400°C is 130%-200% of that at room temperature. When excited by a 430-460 nm excitation source, the emission wavelength ranges from 650 nm to 900 nm. The ceramic preparation process is simple, and the resulting anomalous thermally quenched near-infrared fluorescent ceramic is suitable for high-power near-infrared imaging and detection.

The application discloses a method for constructing oxygen defect regulation of hafnium dioxide 5d track electron, comprising the following steps: S1, using a hydrothermal method, by regulating the oxygen partial pressure in the preparation process, preparing hafnium oxide nanocrystals with different oxygen defects and calculating the oxygen defect concentration; S2, according to the first principle, calculating and constructing a hafnium dioxide crystal model under a microstructure, and modifying the corresponding model according to the experimental results of step S1; S3, according to the hafnium dioxide with oxygen defects obtained in step S2, calculating the total state density and the partial state density of the near-oxygen vacancy end hafnium atom and the far-oxygen vacancy end hafnium atom, respectively, calculating the proportion of the d atom track, and establishing a method for regulating the hafnium dioxide 5d track electron.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a silicon carbide SiCMOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor) device with improved gate oxide layer reliability, the silicon carbide SiCMOSFET device is composed of a plurality of parallel MOS cells, each MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a gate, a gate oxide layer and a source electrode, the semiconductor epitaxial layer comprises an N substrate layer, an N diffusion layer, a P + layer, a P well layer and an N well layer, a high-K medium is arranged between the grid electrode and the P well layer, and doped polycrystalline silicon is arranged on one side of the high-K medium and located between the source electrode and the N well layer. The high-K medium is one of hafnium oxide, aluminum oxide or zirconium dioxide. Through the double-layer stacked structure of the high-K dielectric and the SiOO gate oxide layer, the high dielectric constant of the high-K material is utilized to share the gate voltage, the electric field intensity of a SiOO interface is remarkably reduced, meanwhile, two orders of magnitude of gate leakage current are reduced, and gate oxide layer degradation caused by hot carrier injection is fundamentally inhibited.

Disclosed in the present invention are a thin film deposition device and a deposition method, relating to the technical field of semiconductors. The thin film deposition device comprises an ALD main body, a hafnium source filter, and a hafnium source pipe. Two ends of the hafnium source filter are respectively connected to the ALD main body and the hafnium source pipe; the ALD main body has a deposition chamber, and the hafnium source pipe is in communication with the deposition chamber via the hafnium source filter; and the hafnium source pipe is used for introducing hafnium(IV) chloride gas into the deposition chamber, and the hafnium source filter is used for filtering hafnium(IV) chloride particles from the hafnium(IV) chloride gas. The thin film deposition device provided in the present invention can significantly improve the deposition quality of a hafnium(IV) oxide thin film.

The invention discloses a layer-by-layer annealing hafnium oxide / silicon dioxide antireflection film for high repetition frequency femtosecond laser. The invention discloses a preparation method of the layer-by-layer annealing hafnium oxide / silicon dioxide antireflection film for high repetition frequency femtosecond laser. The preparation method comprises the following steps: 1, depositing a hafnium oxide film on a cleaned fused quartz substrate by using a radio frequency magnetron sputtering coating system, and putting the film into a muffle furnace for high-temperature annealing; and 2, depositing a silicon dioxide film on the annealed hafnium oxide film to obtain a hafnium oxide / silicon dioxide double-layer antireflection film, and then putting the film into a muffle furnace for secondary high-temperature annealing. The optical performance of the hafnium dioxide / silicon dioxide antireflection film is remarkably improved through the layer-by-layer annealing treatment process, good transmissivity and a high damage threshold value under high repetition frequency femtosecond laser irradiation are shown in an ultraviolet visible light region, and the hafnium dioxide / silicon dioxide antireflection film can be applied to the field of high repetition frequency femtosecond lasers.

The invention discloses an ultraviolet response enhancing structure applied to a CMOS (Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method of the ultraviolet response enhancing structure, belonging to the technical field of ultraviolet photoelectric detection. The light emitting diode structurally comprises an anti-reflection film and a P-type silicon epitaxial layer, the anti-reflection film and the P-type silicon epitaxial layer are sequentially stacked in the direction of incident light, a clamping photodiode is formed at the end, away from the anti-reflection film, of the P-type silicon epitaxial layer, and a p + layer is doped at the end, close to the anti-reflection film, of the P-type silicon epitaxial layer; the anti-reflection film comprises a SiO2 layer, an Al2O3 layer and an HfO2 layer, and the SiO2 layer, the Al2O3 layer and the HfO2 layer are sequentially stacked in the direction of incident light; the N well region and the P-type heavily-doped clamping layer are sequentially stacked on the clamping photodiode in the direction of incident light. According to the structure, the defect and trap concentration of an interface of silicon and hafnium oxide are reduced, so that dark current is reduced; the narrower surface P-type doping can reduce the recombination area, thereby enhancing the collection of ultraviolet charges.

The application discloses an AR film with excellent durability, which comprises a substrate layer, wherein an upper coating layer, a primer layer, a first niobium oxide layer, a silicon dioxide layer, a second niobium oxide layer, a silicon-aluminum mixed layer and an anti-scratch layer are sequentially arranged on the substrate layer; wherein a hafnium dioxide layer is arranged between the first niobium oxide layer and the silicon dioxide layer or between the second niobium oxide layer and the silicon-aluminum mixed layer; and the thickness of the hafnium dioxide layer is 1-20 nm. The AR film with excellent durability has excellent optical performance, high hardness, wear resistance and high-temperature resistance, and excellent durability.

An inkjet printer printhead, an element or other component thereof, has an internal cavity with a protective coating. Other surfaces of the component may have the protective coating. To prepare the protective coating, a target thickness for the HfO2 (hafnium dioxide) film is selected to avoid pinhole formation, thin spot and nodule growth. A HfO2 film is deposited on the component as a conformal layer, including on a surface of the internal cavity, using atomic layer deposition (ALD) process-adjusted for the target thickness to form a coated component. A non-wetting coating may be included on the HfO2 film.

The present disclosure relates to memristor devices for neuromorphic computing. A memristor device may include a first electrode, an oxide layer, an interface layer fabricated on the oxide layer, and a second electrode fabricated on the interface layer. The first electrode may include a noble metal and / or an inert metal, such as platinum, palladium, iridium, tungsten, molybdenum, ruthenium, etc. The oxide layer may include a dielectric oxide, such as silicon dioxide, hafnium dioxide, tantalum pentoxide, etc. The interface layer may include a discontinuous layer of a  dielectric material,  such as Al2O3, Y2O3, MgO, etc. The second electrode may include one or more metallic materials that may provide metal ions in response to the application of a suitable voltage to the memristor device, such as copper, silver, etc. In some embodiments, the memristor device may further include an interface layer positioned between the first electrode and the oxide layer.

The application belongs to the field of coating technology, and relates to a laser protective lens high-damage threshold coating method based on a semiconductor wafer process, comprising the following steps: sequentially performing ultrasonic cleaning and plasma activation on an optical lens substrate to obtain a pretreated lens; alternately depositing hafnium dioxide film layers and silicon dioxide film layers on the surface of the pretreated lens by using a double-target co-sputtering process to obtain a coated lens; using trimethylaluminum and ozone as precursors, growing an aluminum oxide packaging layer on the surface of the coated lens by using an atomic layer deposition process, and then performing gradient annealing treatment to obtain a laser protective lens. The whole process is systematically optimized from interface bonding, film layer structure to surface packaging. Through the synergistic effect of optimizing each link of the coating process, the intrinsic quality of the film layer is improved while the environmental adaptability is enhanced, so that the lens can withstand long-term irradiation of high-power laser, and the damage resistance and long-term stability of the laser protective lens are significantly improved.

The invention discloses a petuntse composition, ceramic and application, and relates to the technical field of ceramic. The ceramic disclosed by the invention is obtained by sequentially carrying out ageing treatment, sieving treatment, injection molding, airing, drying and sintering treatment on a petuntse composition. The petuntse composition comprises a ceramic waste material A, a ceramic waste material B and modified particles with gallium-coated cuprous oxide as a core and aluminum oxide as a shell in a specific proportion. And the components such as a high-entropy oxide solid solution generated by the reaction of hafnium oxide, tantalum pentoxide, niobium pentoxide, titanium dioxide, zirconium dioxide, chromium sesquioxide and carbon powder, and chromium heptacarbide are introduced, so that the ceramic prepared from the ceramic waste has excellent fracture toughness, bending strength, wear resistance, high temperature resistance and self-repairing ability. Therefore, the method has a wide application prospect.

This invention relates to the field of semiconductor technology and discloses a trench-type SiC MOSFET structure. The SiC MOSFET structure includes a back metal layer, an N+ substrate on top of the back metal layer, an N- epitaxial layer on top of the N+ substrate, a trench etched on top of the N- epitaxial layer, and a P-type region at the bottom of the trench. A thick oxide layer is provided at the bottom inner edge of the trench, and a gate dielectric layer covers the inner sidewalls of the trench. The gate dielectric layer is filled with a polycrystalline gate. P-type body regions are distributed on top of the N- epitaxial layer and on both sides of the trench, and N+ source regions are embedded within the P-type body regions. An interlayer dielectric layer is provided on top of the N+ source regions, and a front metal layer is provided on top of the interlayer dielectric layer. This invention deposits hafnium dioxide as an insulating dielectric layer at the bottom inner edge of the trench, utilizing the high breakdown field strength of hafnium dioxide to improve the avalanche resistance and reliability of the product.

This invention discloses a radiation-resistant glass, its preparation method, and its application. The radiation-resistant glass comprises the following components in weight percentage: silicon dioxide 60%-70%; sodium oxide 13%-18%; zinc oxide 3%-6%; aluminum oxide 2%-6%; boron trioxide 1%-6%; strontium oxide 1%-3%; cerium dioxide 4.7%-5.5%; lanthanum trioxide / hafnium dioxide 1%-3%; and ammonium difluoride 0.3%-1%. The technical problem to be solved is to significantly improve the high-energy particle radiation protection and light transmittance of the glass by selecting a specific formulation.

The invention provides a synthesis method of a high-purity hafnium-zirconium metal complex precursor, and belongs to the technical field of high-dielectric-constant materials for super-large-scale integrated circuits. According to the method, hafnium tetrachloride or zirconium tetrachloride is used as a metal source and sequentially reacts with dialkylamine, n-butyllithium and an alkyl magnesium halide Grignard reagent through a one-pot method in a high-purity inert atmosphere, an intermediate does not need to be separated, and a target precursor is obtained after filtration, washing and rectification. The method is simple and convenient in process operation, mild in reaction condition and low in energy consumption; the raw materials are wide in source and low in price, the product yield reaches 82%-88%, and the metal purity is stabilized to be 6N; when the precursor is used for preparing a hafnium oxide / zirconium thin film through atomic layer deposition (ALD), the thickness of the thin film reaches 14.3 nm under 100 cycles, the non-uniformity is smaller than or equal to 0.90%, the requirement of a gate dielectric layer of a super-large-scale integrated circuit for a high-purity and high-efficiency precursor can be met, and the precursor is suitable for industrial amplification production.

The invention discloses a smokeless and odorless firework oxidant which is prepared from the following components: zirconium dioxide, hafnium dioxide, silicon dioxide, manganese dioxide, iron oxide, arsenic trioxide and calcium oxide. Wherein the weight ratio of zirconium dioxide is not less than 90%; all the components are mixed, calcined and then subjected to wet ball milling, and a powdery material is obtained. The firework oxidizing agent is suitable for firework firework compositions, can be widely applied to firework spraying compositions and launching compositions, and is smokeless and odorless during combustion; the firework oxidant is not easy to decompose, good in stability, zero in friction sensitivity and impact sensitivity and suitable for high-automation-degree production, and the safety risk of production and transportation is greatly reduced.

The invention discloses a method for preparing hafnium dioxide by electrolyzing hafnium tetrachloride, in the method, relatively pure hafnium dioxide is prepared by electrolyzing hafnium tetrachloride, the whole process flow is simple, and the electrolysis efficiency is high. The method comprises the following steps: preparing an HfCl4 solution; adjusting the HfCl4 solution to a sedimentation critical state by using NaOH particles; an electrode plate is inserted into the electrolytic cell, and the HfCl4 solution in the settling critical state serves as electrolyte to be injected into the electrolytic cell; carrying out water bath heating on the electrolytic bath to a preset temperature, and keeping the preset temperature unchanged; starting a direct-current power supply of the electrolytic bath, and keeping a constant-current state, so that the electrolyte reacts; carrying out centrifugal separation on the electrolyte after the reaction, and washing and drying precipitates obtained by centrifugal separation; and calcining the dried precipitate to obtain hafnium oxide.

The present invention discloses a monoclinic hafnium dioxide film with adjustable orientation and a preparation method thereof, belonging to the technical field of thin film materials. It is prepared by adopting a dual-temperature zone hot wall horizontal chemical vapor deposition device, placing a precursor in the first temperature zone of the deposition device, and placing a single crystal silicon substrate in the second temperature zone of the deposition device; vacuuming and heating, the first temperature zone target temperature is 190-210°C, the second temperature zone target temperature is 500-1100°C, and the two are controlled to reach the target temperature at the same time; when the target temperature is about to be reached, a reaction gas is introduced to a target pressure of 100-2000Pa, and the precursor vapor in the first temperature zone is transported to the surface of the silicon substrate in the second temperature zone with a reaction gas for reaction, the flow rate of the reaction gas is 10-500sccm, and the reaction ends to obtain a monoclinic hafnium dioxide film. This method can stably regulate the orientation of the monoclinic hafnium dioxide film, and the prepared film structure is continuous and uniform, and the thickness is controllable.

This application provides a ferroelectric thin-film capacitor and its fabrication method, a ferroelectric memory, and an electronic device. Each ferroelectric thin-film capacitor in the ferroelectric memory includes two electrode layers and a ferroelectric layer, with the ferroelectric layer located between the two electrode layers. The ferroelectric layer comprises hafnium dioxide material and includes at least one first doped region, in which a first doping element is doped. The atomic radius of the first doping element is smaller than the atomic radius of the hafnium element in the ferroelectric layer. The ferroelectric memory of this application can achieve higher crystallization quality under low-temperature rapid thermal crystallization conditions, thereby reducing operating voltage and power consumption, and improving storage reliability.

The invention belongs to the technical field of LED manufacturing, particularly relates to a UVB LED chip and a preparation method, and aims to improve the light transmittance of the UVB LED chip. The UVB LED chip comprises a substrate, an antireflection film, a filtering film, an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The antireflection film is located on the surface of one side of the substrate, the filtering film is located on the side, away from the substrate, of the antireflection film, the N-type semiconductor layer is located on the side, away from the substrate, of the filtering film, the active layer is located on the side, away from the substrate, of the N-type semiconductor layer, and the P-type semiconductor layer is located on the side, away from the substrate, of the active layer. Wherein the material of the anti-reflection film comprises at least one of magnesium fluoride, aluminum fluoride and aluminum oxide, the thickness of the anti-reflection film is lambda / 4n, lambda is the target wavelength of the anti-reflection film, and n is the material refractive index of the anti-reflection film. The filtering film is a single-layer or multi-layer interference filtering film, and the material of the filtering film comprises at least one of titanium oxide, hafnium oxide, aluminum oxide, silicon dioxide and aluminum fluoride.

The invention belongs to the field of medical detection, and particularly relates to a memristor for non-invasive dynamic ovulation monitoring and application. The memristor comprises a substrate, a bottom electrode, a functional layer and a top electrode which are sequentially arranged from top to bottom, wherein the functional layer is a hafnium oxide film. The memristor provided by the invention has the characteristic of ultrahigh sensitivity to electrical property changes of ion concentration and viscosity in biological fluids such as saliva, urine and the like, and a complex physiological state under regulation and control of hormones such as estrogen, LH and the like is converted into a quantifiable electric signal to be output, so that dynamic and accurate capture of a growth window is realized. The low power consumption and stable cycle characteristics of the device lay a solid foundation for developing wearable integrated equipment, and the device is expected to promote the development of reproduction management towards the family, real-time and intelligent directions, and finally the success rate and safety of assisted reproduction treatment are improved.

The invention provides a hafnium oxide-based nano-drug as well as a preparation method and application thereof, and belongs to the technical field of nano-medicines. The preparation method comprises the following steps: mixing a hafnium chloride solution and an alkali solution, and carrying out hydrothermal reaction to obtain hafnium dioxide; mixing a bovine serum albumin solution and the hafnium oxide suspension, and performing centrifugal separation to obtain BSA modified hafnium oxide; adding a doxorubicin aqueous solution into the BSA modified hafnium oxide dispersion liquid for reaction to obtain doxorubicin-loaded hafnium oxide; and adding a potassium permanganate solution into the dispersion liquid of the doxorubicin-loaded hafnium oxide, and carrying out ultrasonic treatment to obtain the hafnium oxide-based nano-drug. The hafnium oxide-based nano-drug provided by the invention is a nano-drug capable of regulating and controlling the tumor microenvironment and combining the radiotherapy and chemotherapy functions, and can significantly improve the treatment response and benefit of patients.

The invention belongs to the technical field of functional material preparation, and provides GYbZ powder for PS-PVD spraying and a preparation method of the GYbZ powder. The preparation method comprises the following steps: mixing powder preparation raw materials with water, and carrying out ball milling to obtain slurry; sequentially carrying out spray granulation and drying on the slurry to obtain a granular material; and sintering and spheroidizing the granular material by adopting plasma flame, and crushing the obtained spheroidized powder to obtain the GYbZ powder, raw materials for preparing the powder comprise the following components in percentage by mass: 38-42% of zirconium dioxide, 5-8% of ytterbium trioxide, less than or equal to 1.0% of hafnium oxide and the balance of gadolinium trioxide. According to the method, the granular material is sintered and spheroidized by adopting plasma flame, so that pores in the final GYbZ powder are relatively few. Data of the embodiment shows that the porosity of the obtained GYbZ powder is 15-19%.

The present invention discloses a tantalum-doped hafnium dioxide ferroelectric film, its preparation method and application. Ta metal target and HfO2 ceramic target are used in a multi-target co-magnetron sputtering device. By controlling the sputtering power, Ta:HfO2 films with different Ta doping ratios are obtained. In addition, by adjusting the sputtering power and the working gas Ar:O2 ratio, the residual polarization intensity P of the Ta:HfO2 film can be adjusted. r Can reach 100 μC / cm 2 , a 4-10-fold improvement compared to data reported in the literature. This method, applied to biomimetic synaptic devices, achieved the ability to switch between long-term potentiation and inhibition by controlling the oxygen flow during functional layer growth, adjusting the width of electrical pulses during synaptic testing, and varying the value of an external series resistor. This invention broadens the range of materials available for the dielectric layer of biomimetic synaptic devices, and the proposed synaptic device structure is simple and stable, making it suitable for large-scale industrial production.

This invention discloses a ceramic clay composition, ceramics, and their applications, relating to the field of ceramic technology. The ceramics of this invention are obtained by sequentially processing the ceramic clay composition through a process of material conditioning, sieving, casting, air drying, oven drying, and sintering. The introduction of specific proportions of ceramic waste A and B, modified particles with a gallium-coated cuprous oxide core and an alumina shell, and high-entropy oxide solid solutions generated from the reaction of hafnium dioxide, tantalum pentoxide, niobium pentoxide, titanium dioxide, zirconium dioxide, chromium trioxide, and carbon powder, as well as chromium heptacarbonide, into the ceramic clay composition gives the ceramics prepared from the ceramic waste excellent fracture toughness, flexural strength, wear resistance, high-temperature resistance, and self-healing ability. Therefore, this invention has broad application prospects.

The invention relates to the technical field of functional materials, in particular to a hafnium oxide-doped single-phase multiferroic material and a preparation method thereof. The chemical expression of the single-phase multiferroic material is Hf1-xNbxO2 or Hf1-yTayO2, x is more than 0 and less than or equal to 0.5, and y is more than or equal to 0.25 and less than or equal to 0.5. According to the hafnium oxide-doped single-phase multiferroic material, Ta or Nb-doped hafnium oxide is used, the condition of ferromagnetic property is met by utilizing additional d orbital electrons provided by introduced transition metal Ta or Nb, meanwhile, introduced impurities do not change non-centrosymmetric arrangement of oxygen atoms, the ferroelectric property of hafnium oxide is reserved, and the ferroelectric property of the hafnium oxide is improved. Therefore, the hafnium oxide-doped single-phase multiferroic material is realized, and relatively strong magnetoelectric coupling is realized.

The application belongs to the field of ferroelectric material preparation, and specifically provides a preparation method of a samarium-doped hafnium dioxide ferroelectric film with high residual polarization value. First, hafnium salt and samarium salt are used as raw materials to prepare a clear light yellow samarium-doped hafnium dioxide precursor solution, then the precursor is coated on a treated platinum substrate according to experimental requirements, and finally, the Sm-HfO2 ferroelectric film with high residual polarization value is obtained through drying, preheating and annealing treatment. The hafnium oxide-based ferroelectric film prepared by the chemical solution method can realize accurate control of the film thickness, has good film uniformity, is simple to operate, has flexible and controllable doping element content, has simple equipment requirements, is low in cost, is repeatable in process, and is easy to realize industrialized production.

A ferroelectric device and methods of forming the same are described. In some embodiments, the method includes depositing a doped hafnium dioxide layer on a layer, and the doped hafnium dioxide layer has a first oxygen vacancy concentration. The method further includes performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration and performing an oxygen anneal process on the doped hafnium dioxide layer to decrease the second oxygen vacancy concentration.

The invention discloses a preparation method and application of a hafnium oxide thin film, and the preparation method of the hafnium oxide thin film comprises the following steps: providing a substrate which is a crystal face (111) of a cubic oxide; and growing a hafnium oxide film on the surface of the substrate by adopting an oxide epitaxial growth technology. Growth of the hafnium oxide thin film is carried out from the two aspects of the substrate and the growth process, the crystalline phase of the grown hafnium oxide thin film is a pure ferroelectric phase, and the crystal orientation of the grown hafnium oxide thin film is controllable and repeatable. Tests show that the grown hafnium oxide film has obvious ferroelectricity, and the minimum out-of-plane remanent polarization of the hafnium oxide film can reach 25 mu C / cm < 2 >. The hafnium oxide thin film provided by the preparation method has important application prospects in the field of microelectronic devices.

A functionally graded firing setter that includes a substrate layer of cubic oxide; a top layer of unstabilized zirconium dioxide / hafnium dioxide; and a continuous transitional gradient layer disposed between the substrate layer and the top layer. The continuous transitional gradient layer includes cubic oxide stabilized zirconium dioxide / hafnium dioxide. The cubic oxide can be calcium oxide (CaO) or magnesium oxide (MgO).