136 results about "Hafnium dioxide" patented technology

A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO2) is subjected a dry etching process comprising BCl3 and an additive gas including: an oxygen-containing gas, such as O2; or a nitrogen-containing gas, such as N2; or a hydrocarbon gas (CxHy), such as CH4; or a combination of two or more thereof.

A multilayer structure, used especially as a material of high relative permittivity, includes a plurality of separate layers, each having a thickness of less than 500 Å, and based on hafnium dioxide (HfD2), zirconium dioxide (ZrO2) and alumina (Al2O3). In practice, the hafnium dioxide, zirconium dioxide and alumina layers form alloys of formula HfxZrAlyOz. Advantageously, the stoichiometry of the HfxZrAlyOz alloys varies from one layer to another.

The invention discloses an IVB-family element modified CaCu3Ti4O12-based pressure-sensitive material and a preparation method thereof. The general formula of a chemical composition of the pressure-sensitive material is CaCu3Ti4-xAxO12, wherein A is one or the composition of several of IVB-family elements in the periodic table of chemical elements and is not Ti, and x is equal to 0.002-2. The preparation method comprises the following steps of: proportioning calcium carbonate, copper oxide, titanium dioxide, zirconium dioxide and hafnium dioxide in a stoichiometric ratio of the CaCu3Ti4-xAxO12, wherein, x is equal to 0.002-2; A is one or the composition of several of the IVB-family elements in the periodic table of chemical elements and is not Ti; then carrying out the processes of ball milling, calcining, secondary ball milling, pelleting, shaping, rubber discharging and high-temperature sintering to finally prepare CaCu3Ti4O12-based ceramic with good pressure-sensitive characteristic. The invention effectively improves the pressure-sensitive characteristic of the ceramic, reduces the leakage current thereof, and simplifies the preparation process while holding the high dielectric performance of the pressure-sensitive ceramic, thereby making the ceramic meet commercial demands.

The invention discloses an electron beam aligning mark based on hafnium oxide, which belongs to the field of micro and nano fabrication of a semi-conductor device. The electron beam aligning mark based on hafnium oxide comprises a substrate and a hafnium oxide thin film mark plated on the substrate. The invention further provides a manufacturing method which specifically comprises the steps of: (1) cleaning the substrate; (2) carrying out spin coating of an electronic resist on the substrate and forming a pattern array with an aligned mark in the electronic resist through an electron beam photolithography technique; (3) evaporating hafnium oxide thin films on the electronic resist and the substrate; and (4) peeling the hafnium oxide thin films attached to the positive electronic resist to obtain the hafnium oxide mark. The aligned mark obtained by the electron beam lithography is prepared by using hafnium oxide which is high temperature resistive, good in adhesion and low in cost. Compared with the conventional 'titanium+gold' marks, the process cost is reduced, the problem that the gold mark and the Si substrate are not adhered well is solved, the adhesion and high temperature bearing capacity of the aligned mark to the substrate are improved, and the higher aligning precision is maintained.

The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and / or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO2) is subjected a dry etching process comprising BCl3 and an additive gas including: an oxygen-containing gas, such as O2; or a nitrogen-containing gas, such as N2; or a hydrocarbon gas (CxHy), such as CH4; or a combination of two or more thereof.

A refractory ceramic material possessing a solidus temperature between 2500° C. and 2800° C., having a compactness greater than 85%, and a microstructure such that the material is composite of: (a) hafnium dioxide HfO2 grains having a monoclinic structure (1); (b) hafnium dioxide HfO2 grains having a cubic structure (2) which is stabilized by yttrium oxide Y2O3, the yttrium oxide Y2O3 representing 0.5 mol % to 8 mol % relative to the total number of moles of hafnium dioxide HfO2; (c) closed pores (3); (d) non-interconnected open pores. The process of manufacturing the material and a structural part incorporating the material are also set forth.

The invention discloses a preparation method of silicon nitride ceramic balls, and relates to the technical field of ceramic preparation. According to the technical key points, the preparation methodof the silicon nitride ceramic balls comprises the steps of ceramic ball raw material preparation, compression molding, sintering, grinding and polishing. Ceramic ball raw materials comprise the following components by the mass percentage: 85-95% of silicon nitride powder, 1-5% of yttrium oxide, 1-10% of erbium oxide, 0.5-2% of hafnium dioxide, 1-5% of titanium dioxide, and 0.5-2% of magnesium oxide. The silicon nitride ceramic balls prepared by the preparation method have the advantages of low density, high hardness, low friction coefficient, self-lubrication and good rigidity.

The invention discloses an infrared waveband diaphragm composite membrane and a preparation method as well as a composite material, belonging to the technical field of manufacturing of optical thin films. The infrared waveband diaphragm composite membrane has a double-layer membrane structure; the first layer is a hafnium oxide membrane layer and the second layer is a chromium membrane layer; the first layer and the second layer have strong bonding force with a calcium fluoride base; and the inner stress is small and the manufacturability of an infrared diaphragm prepared by a photographing copying method is good. According to the preparation method of the infrared waveband diaphragm layer, the hafnium oxide membrane layer and the chromium membrane layer are plated by adopting an evaporation manner and the chromium membrane layer is plated by two times so that the diaphragm prepared by adopting the photographing copying method has flat and smooth lines and have no light-transmitting point; and the preparation method has a simple technological process, is easy to operate and is suitable for industrial popularization and application. A base material of the infrared waveband diaphragm composite material is calcium fluoride, the inner layer membrane is the hafnium oxide membrane layer and the outer layer is the chromium membrane layer; and the bonding capability of the chromium membrane layer and calcium fluoride is strong and the process performance is good.