Low-dimensional nano photodetector based on in-plane asymmetric local field control and preparation method thereof
A photodetector, low-dimensional nanotechnology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as affecting the photodetection performance of the device and reducing the response speed of the device, and achieve continuous photoconductivity, responsivity and detection rate. The effect of stabilization, improved signal-to-noise ratio and response speed
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[0025] The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing:
[0026] The invention develops a photodetector controlled by an in-plane asymmetric local field. Half of the ZnO channel is covered with a thin layer of HfO 2 , using the introduction of asymmetric hafnium dioxide to form a partial adsorption of charged gas molecules on the nanosheets to regulate the concentration of carriers on both sides of the ZnO nanosheets, form an in-plane asymmetric local field, and greatly improve the response time of the ZnO photodetector , with higher rectification ratio, higher detection rate and response rate.
[0027] Specific steps are as follows:
[0028] 1. Substrate Selection
[0029] Use heavily doped p-type silicon as the substrate with a resistivity of 0.05Ω cm, SiO 2 The oxide layer thickness is 300nm;
[0030] 2. Mark mark production
[0031] Use ultraviolet lithography to prepare mark patterns on p-type si...
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