74results about How to "Enhanced infrared absorption" patented technology

The invention relates to a thermo-optical infrared detector and a preparation method thereof, and is characterized in that the infrared detector consists of a silicon substrate, a pixel array arranged on the silicon substrate and a glass bonded with the silicon substrate; alternatively, the infrared detector consists of a silicon substrate, a pixel array arranged on the silicon substrate, a glass bonded with the silicon substrate and an infrared filter bonded with the silicon substrate. In the TO-IRD, a special heat-insulation structure and a process design are used for preparing a heat insulation column with high height standing on the silicon substrate, thus improving the heat insulation performance of the TO-IRD; in a pixel film system, by designing and preparing a special infrared absorbing layer, the absorption rate of the TO-IRD to the infrared radiation is improved; furthermore, the modulation function of the TO-IRD to the readout beam is not affected; and the vacuum encapsulation of the device is realized by the bonding of silicon glass or bonding of infrared filter in vacuum.

The invention relates to a polarization sensitive type non-freezing infrared detector which comprises a first-layer suspension structure, wherein the first-layer suspension structure is a non-freezing infrared detector; a second-layer suspension structure is arranged on the first-layer suspension structure; the second-layer suspension structure comprises a grating support layer and a metal grating structure arranged on the grating support layer. An optical system is simplified, and the reality and the effectiveness of images are improved. The invention further relates to a manufacturing method of the polarization sensitive type non-freezing infrared detector. The manufacturing method comprises the following steps: 1, manufacturing a second scarification layer and a grating support layer on a conventional non-freezing infrared detector without structure release; 2, manufacturing the metal grating structure; 3, performing structure release, thereby forming the polarization sensitive type non-freezing infrared detector.

The invention relates to a structure of a hard-tube anti-fog endoscope and belongs to the technical field of minimally invasive medical treatment. By changing the structure of a front window diaphragm and adopting a packaging mode of the window diaphragm and the endoscope, an anti-fog function is guaranteed, and meanwhile, the influence on system imaging quality caused by an existing protection window structure is overcome. The structure of the hard-tube anti-fog endoscope has the positive and progressive effects that a front window structure has excellent infrared absorption performance and excellent window heat transfer performance, achievement of the anti-fog function is guaranteed, and meanwhile, the influence on imaging definition caused by entry of illumination light into an imaging light path of the endoscope due to the surface reflection of the window diaphragm is avoided; the imaging quality of the endoscope can be effectively guaranteed; the structure of the hard-tube anti-fog endoscope is particularly applicable to a device for an anti-fog endoscope system, disclosed by a patent of which the application number is 201210324982.0; the structure of the hard-tube anti-fog endoscope is used as an anti-fog endoscope.

The invention relates to an uncooled dual-color polarization infrared bolometer. Two polarization structures are prepared on a uncooled dual-color infrared bolometer which comprises four regions arranged in a matrix and including first and third regions and second and fourth regions. Resonant cavities with different heights are formed in the first and third regions and the second and fourth regions. The invention also relates to a method for preparing the bolometer. The method comprises steps of: preparing the resonant cavities with different heights in the first and third regions and the second and fourth regions; sputtering thermosensitive films with different square resistance values, and preparing the two polarization structures in the first and third regions and the second and fourth regions of the uncooled dual-color infrared bolometer respectively. The uncooled dual-color polarization infrared bolometer can operate in an ultralow temperature environment (-80 to -60 degrees centigrade) and an ultrahigh temperature environment (85 to 100 degrees centigrade, and has a polarization characteristic.

A building cylinder arrangement (1) for a machine (70) for the layer-by-layer production of three-dimensional objects (71) by laser sintering or laser melting of powdered material (74), with a substantially cylindrical shell-shaped main body (2) and a piston (4) that can move on an inner side of the main body (2) along a cylinder axis (3) of the main body (2), wherein the piston (4) has on its upper side a substrate (21) for the growing of the three-dimensional objects (71), is characterized in that the main body (2) comprises a substantially cylindrical shell-shaped insulating body (5), whichforms at least the inner side of the main body (2), wherein the insulating body (5) consists of a material with a specific thermal conductivity Lamuda IK, where Lamuda IK is equal to or smaller thans 3 W/(m*K), in that the piston (4) is formed with an upper part (12) and a lower part (14), wherein the upper part (12) comprises the substrate (21), and wherein the lower part (14) has a cooling device (18), in particular a system of cooling water channels, and in that a first seal (20) of elastomer material is provided on the lower part (14) and is used to provide a gas-tight seal for the lowerpart (14) of the piston (4) with respect to the inner side of the main body (2). The invention proposes a building cylinder arrangement with which improved gas-tight sealing between the piston and the main body can be achieved even at high temperatures (for instance above 500 degrees).

This application describes photovoltaic devices that include, in some embodiments, plasmonic nanoparticles and colloidal quantum dots and that have enhanced photovoltaic conversion efficiencies. This application also describes methods of making and using photovoltaic devices. Certain photovoltaic devices include plasmonic nanoparticles integrated with light absorbing semiconductor nanoparticles such as, but not limited to, colloidal quantum dots. Certain photovoltaic devices include solution-processed materials (e.g., colloidal plasmonic and light absorbing semiconductor nanoparticles) that are specifically tuned to enhance overall photovoltaic performance through increased absorbance of the light absorbing material.

The present invention provides a near-infrared absorbent green glass composition which contains basic glass components and 0.6 to 1.3% total iron oxide amount in terms of Fe₂O₃ (T-Fe₂O₃), 0 to 2.0% CeO₂ and, 300 ppm or less MnO expressed in units of mass and wherein a mass ratio (FeO ratio) of FeO converted into Fe₂O₃ relative to the T-Fe₂O₃ is from 0.21 to 0.35. Further the glass composition satisfies at least one of the following a) and b):

• • a) when the glass composition is formed to have a thickness in the range of 1.3 to 2.4 mm, a visible light transmittance is at least 80%, a total solar energy transmittance is 62% or less, a dominant wavelength is from 500 to 540 nm, and an integrated value obtained by integrating transmittance of every 1 nm in the wavelength from 1100 to 2200 nm is 62000 or less;
  • b) when the glass composition is formed to have a thickness in the range of 3 to 5 mm, a visible light transmittance is at least 70%, a total solar energy transmittance is 45% or less, a dominant wavelength is from 495 to 540 nm, and an integrated value obtained as above is 62000 or less.

The invention provides a method for improving enhancement factors of a surface-enhanced infrared spectrum by means of a sandwich structure. In the sandwich structure, a first layer is a gold nano-island film; a second layer is a material to be detected; and the third layer is a metal nanorod. Infrared light excites the gold nano-island film and the metal nanorod to couple between surface plasma fields, so that an infrared absorption spectrum of analytes in the sandwich structure is greatly enhanced. The analytes can be replaced into the material required to be detected according to the experimental requirements. Due to the adoption of the method, the enhancement factors of the surface-enhanced infrared spectrum are better improved, and the application field of surface-enhanced infrared is hopefully expanded.

The invention discloses a selective infrared absorption material of a phosphoric intercalated structure as well as a preparation method application thereof. The selective infrared absorption material of a phosphoric intercalated structure is short in P-LDHs and the molecular formula thereof is Mg<2+>1-xAl<3+>x(OH)2(Pa(CO3<2>b.Kh2O. The preparation method of the selective infrared absorption material of a phosphoric intercalated structure is as follows: mg-al hydrotalcite MgAl-CO3-LDHs which takes the anions between layers as carbonate ions is used as a precursor; an ion exchange method is used to insert the ions of a phosphoric compound into the layers of the hydrotalcite and assembled to obtain the P-LDHs with an excellent crystal phase structure. The P-LDHs has excellent infrared absorption performance. When the P-LDHs is applied into a polymer film, the infrared absorption effect of P-LDHs is better than that of MgAL-CO3-LDHs which is singly used; the infrared absorption effect is better than that of singly adding P-LDHs when PE is added after the MgAL-CO3-LDHs and the P-LDHs are mixed according to a proportion of 3-0.3: 1.

The invention relates to an uncooled infrared detector comprising a bridge floor, bridge legs, anchor posts, a substrate and at least one auxiliary infrared absorption layer, wherein all the auxiliary infrared absorption layer is arranged on an upper surface of the bridge floor in a laminated manner. According to the uncooled infrared detector, the auxiliary infrared absorption layer is added on a top part of the bridge floor, infrared heat radiation absorption capability of the detector can be effectively improved via cooperation between the auxiliary infrared absorption layer and an infrared absorption layer of the bridge floor, and therefore a temperature response rate of the detector can be improved while an NETD can be lowered. Each auxiliary infrared absorption layer can be made of titanium or titanium nitride or can be a multilayer structure infrared absorption layer consisting of a titanium layer, a titanium nitride layer and a non-metallic material layer or can be made of a combination material made of titanium, titanium nitride and a non-metallic material; an infrared absorption rate can be effectively improved.

The invention discloses a method for manufacturing an uncooled infrared focal plane array pixel with a silicon-germanium film. The method includes the steps of transferring the silicon-germanium film to a CMOS wafer from an SOI wafer, etching the silicon-germanium film to form a channel, forming a metal top electrode with a lift-off method, etching the silicon-germanium film to form a sensitive block, depositing a silicon nitride supporting film with a PECVD method, carrying out electroplating to grow metal electrode columns, sputtering TiW to form a circuit, sputtering an infrared absorption layer, etching a silicon nitride layer, a TiW layer and the like, forming an L-shaped cantilever beam and the like. According to the method, silicon-germanium/silicon quantum well materials are successfully applied to the field of micrometering bolometers, and the range of sensitive materials capable of being used for making an uncooled infrared focal plane is expanded; it is considered that the silicon-germanium/silicon quantum well materials are three-dimensional electric conducting materials, a U-shaped loop is formed in the mode of etching the channel, and the resistance of the sensitive area is improved; the silicon nitrogen film is introduced, a lambda/4 resonance infrared absorption cavity is formed in the sensitive area, the size of the infrared absorption cavity is accurately controlled, and the infrared absorption rate is effectively improved.

The invention relates to a preparation method of a nano-tin dioxide modified polyester fiber, and the preparation method comprises preparation of a nano-tin dioxide modified polyester chip, as well as spinning by a blending FDY (fully drawn yarn) process. The method can be completed on conventional spinning equipment, tow evenness is uniform, colors are distributed uniformly, and the obtained fabric is flat and has the characteristic of mild gloss. The nano-tin dioxide modified polyester fiber can be widely applied in the fields of clothes, decoration and industry.

The invention relates to a selective infrared absorption material of amino adipate with an intercalation structure which is shorten as IDAs-LDHs and the molecular formula thereof is (M<2+>)1-x(M<3+>)x(OH)2(A<2->a(Bb.mH2O. The invention also relates to a preparation method of the selective infrared absorption material of the amino adipate with the intercalation structure, which is characterized in that hydrotalcite LDHs is taken as a precursor, and organic matter of aminoacetic acid is intercalated between the hydrotalcite LDHs layers by an ion-exchange method and then assembled to obtain the IDAs-LDHs with a good crystal phase structure and excellent performance. The absorptivity of the IDAs-LDHs material for absorbing infrared ray with various wave bands is increased by more than 45 percent to 79 percent compared with that of the hydrotalcite LDHs precursor, by 20 percent compared with the hydrotalcite in 7 to 25mum and by more than 105 percent compared with the hydrotalcite in 10 to 14mum, so the IDAs-LDHs material has excellent infrared absorption ability and is a good infrared absorption material.

The invention provides a self-test MEMS thermopile infrared detector. The detector comprises a substrate and a supporting layer stacked on a surface of the substrate, a thermopile assembly and an infrared absorption unit are arranged on the surface, away from the substrate, of the supporting layer, the infrared absorption unit makes contact with the thermopile assembly to achieve thermal connection between the thermopile assembly and the infrared absorption unit, and an electric insulation structure is arranged between the thermopile assembly and the infrared absorption unit; a self-checking component is also included, when a pressure applying end of the self-checking component is externally connected with a power supply and a grounding end of the self-checking component is grounded, generated heat is conducted to the thermopile assembly through the infrared absorption unit to generate a potential difference so that an electrical response rate of a thermopile can be obtained; an electrical response rate difference value obtained by applying pressure twice is compared with a response rate difference value preset threshold value so that whether the device works normally can be determined; and a self-test function of the MEMS thermopile detector is realized, use of special equipment for testing is avoided, test cost is effectively reduced, time consumption of a device test processis reduced, and the use of the device is more convenient.

The invention discloses an uncooled optical readout type infrared thermal imaging system. The system comprises a front-end structure, an excitation light source and a rear-end structure which are sequentially arranged from front to back, wherein the front end structure comprises a vacuum cavity, and a lens, an infrared detection array, a sample table and a rearview mirror which are sequentially arranged in the vacuum cavity from front to back; the central positions of the lens, the infrared detection array, the sample table and the rearview mirror are located on the same straight line; the infrared detection array comprises a plurality of detection units, and each detection unit comprises a supporting structure, a temperature-sensitive light-emitting layer, a reflecting layer, an absorbinglayer and a silicon micro lens which are sequentially arranged from bottom to top. The technical problems that an existing infrared imaging system is complex in structure and preparation process andhigh in cost are solved.

The invention relates to rare earth upconversion materials and preparation methods thereof, in particular to a dye-sensitized rare earth upconversion material and a preparation method thereof and aims to solve the technical problem of low light emitting efficiency of existing dye-sensitized upconversion materials. The dye-sensitized rare earth upconversion material is in a five-layer hollow spherical shell structure which is composed of an inner layer, an inner transmitting layer, a light emitting layer, an outer transmitting layer and an outer layer sequentially from inside to outside, and infrared dye molecules are connected to surfaces of the inner layer and the outer layer of the hollow spherical shell structure. The preparation method includes: taking a silicon dioxide nanosphere as a template, coating the spherical surface of the template with an upconversion shell layer as the light emitting layer, etching the silicon dioxide to obtain a hollow upconversion spherical shell namely the light emitting layer, and simultaneously coating inner and outer surfaces of the hollow spherical shell with Yb<3+>-containing transmitting shell layers and Nd<3+>-containing surface shell layers to construct efficient bidirectional energy transmitting passages, and finally simultaneously connecting the dye molecules to the inner and outer surfaces of the spherical shell to serve as energy absorption antennas. The dye-sensitized rare earth upconversion material is applicable to the biological field of drug loading and controlled release.

The invention provides a glyphosine intercalated structural selective infrared absorbing material as well as a preparation method and an application thereof. The infrared absorbing material is abbreviated as GLYP-LDHs with molecular formula being (M1-x(Alx(OH)2(C4H9NO8P2a(Bb*mH2O. The preparation method of the material is implemented by taking hydrotalcite as precursor and intercalating N, N-dual (phosphine hydroxymethyl) glycine ions into the hydrotalcite layers by ion exchange method to assemble to obtain GLYP-LDHs with good crystal phase structure. The GLYP-LDHs has good infrared absorbency. When applied to polymer films such as polyethylene or ethylene-acetic acid ethylene polymer and the like, GLYP-LDHs has better infrared absorbency effect than MgAl-CO3-LDHs, when MgAl-CO3-LDHs and GLYP-LDHs are mixed in proportion of 1:1 folllowed by adding PE, the infrared absorbency effect is much better than adding GLYP-LDHs alone.

The invention discloses an infrared focal plane array and an infrared thermal imaging system based on the infrared focal plane array, and belongs to the field of the infrared thermal imaging. The infrared focal plane array comprises a plurality of array units in periodical arrangement, each array unit comprises a substrate, an insulation support layer, a sub-wavelength grating structure and an infrared absorbing layer; the infrared thermal imaging system based on the infrared focal plane array comprises a wavelength conversion module, a read-out signal production module and an imaging displaymodule; a core element of the wavelength conversion module is the infrared focal plane array; the infrared radiation from a target is focused on the focal plane, the infrared image information of thetarget is converted into the temperature distribution information on the focal plane array; the read-out signal production module is used for producing linear polarization narrow-band near infrared ray and enabling the linear polarization narrow-band near infrared ray to enter the imaging display module after being reflected by the infrared focal plane array, thereby realizing target object visualization. The system disclosed by the invention realizes large-area array, high-pixel, low-cost and quick-response thermal imaging system design.