Uncooled dual-color polarization infrared bolometer and manufacture method thereof

A technology of infrared detector and manufacturing method, which is applied in the directions of electric radiation detector, radiation pyrometry, manufacturing microstructure device, etc. , reduce optical components, the effect of good image quality

Active Publication Date: 2017-08-29
YANTAI RAYTRON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In addition, there is no detection that combines an uncooled two-color polarized infrared detector with a polarization detection system; in the existing polarization detection system, the polarization element is independent of the detector, and a polarizer needs to be added to the lens of the whole machine , or design a polarization lens, this method is relatively expensive and difficult to design; the disadvantage of this existing polarization detection system is that the optical components are complex and the optical path system is complicated to obtain polarization information by rotating the polarization element
The polarization image collected through the combination of polarizer and detector needs to be processed by image fusion algorithm, which is not only complicated but also relatively inaccurate

Method used

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  • Uncooled dual-color polarization infrared bolometer and manufacture method thereof
  • Uncooled dual-color polarization infrared bolometer and manufacture method thereof
  • Uncooled dual-color polarization infrared bolometer and manufacture method thereof

Examples

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Effect test

Embodiment 1

[0095] A method for manufacturing an uncooled two-color polarized infrared detector, first preparing an uncooled two-color infrared detector without sacrificial layer release, comprising the following steps:

[0096] (1) Deposit one layer of metal reflective layer 6 on the substrate comprising ASIC circuit, and carry out patterning process to described metal reflective layer 6, the metal reflective layer 6 after patterning process comprises the metal block of matrix arrangement;

[0097] (2). Deposit an insulating dielectric layer 7 on the metal reflection layer 6, the insulating dielectric layer 7 is silicon dioxide, and the thickness of the insulating dielectric layer 7 is Such as figure 2 As shown, and carry out CMP treatment to described insulating medium layer 7, remove thickness is Such as image 3 shown;

[0098] (3) Utilize the method for photolithography and etching, in the first and third areas, etch connection holes at the corresponding positions of the detect...

Embodiment 2

[0117] The difference from Example 1 is that in step (19), when preparing the metal grating structure on the grating support layer, the photoresist or PI is first spin-coated on the grating support layer, and the photoresist coating or PI is coated by photolithography technology. A grating pattern is obtained on the PI coating with a grating interval of 10-500nm. Then, a metal film is deposited or sputtered on the photoresist or PI coating by physical vapor deposition or sputtering. Finally, the light is removed by a lift-off process. Resist or PI coating, and the excess metal film is peeled off, the metal film is gold, copper, aluminum, titanium, cadmium or chromium, and the thickness is 10-500nm.

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Abstract

The invention relates to an uncooled dual-color polarization infrared bolometer. Two polarization structures are prepared on a uncooled dual-color infrared bolometer which comprises four regions arranged in a matrix and including first and third regions and second and fourth regions. Resonant cavities with different heights are formed in the first and third regions and the second and fourth regions. The invention also relates to a method for preparing the bolometer. The method comprises steps of: preparing the resonant cavities with different heights in the first and third regions and the second and fourth regions; sputtering thermosensitive films with different square resistance values, and preparing the two polarization structures in the first and third regions and the second and fourth regions of the uncooled dual-color infrared bolometer respectively. The uncooled dual-color polarization infrared bolometer can operate in an ultralow temperature environment (-80 to -60 degrees centigrade) and an ultrahigh temperature environment (85 to 100 degrees centigrade, and has a polarization characteristic.

Description

technical field [0001] The invention relates to an uncooled two-color polarized infrared detector and a manufacturing method thereof, belonging to the field of uncooled infrared detectors. Background technique [0002] Uncooled infrared detectors (uncooled infrared bolometers) have been widely used in civilian fields, such as fire protection, automotive assistance, forest fire prevention, field detection, and environmental protection, in addition to military applications. [0003] The original uncooled infrared focal plane (Uncooled IRFPA) chip is a monochrome chip. At present, there is no two-color infrared detector chip integrated on one chip. The main reason is that different infrared bands require different resonant cavity heights. The traditional process The method and structure cannot be integrated; the square resistance of the vanadium oxide thin film deposited on the monochrome chip is the same value, resulting in a limited operating temperature range. At the end, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20B81C1/00
CPCB81C1/00349B81C1/00523B81C1/00611G01J5/20G01J2005/0077
Inventor 邱栋甘先锋王鹏王宏臣陈文礼
Owner YANTAI RAYTRON TECH
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