53 results about "Infrared focal plane array" patented technology

The invention relates to the technical field of aluminum plate processing, and discloses an aluminum plate processing cleaning intelligent monitoring system, which comprises a three-dimensional deformation sensing module, a surface residue detection module, a thermal stress distribution analysis module, a vibration spectrum identification module, a processing track optimization module, an environmental parameter fusion module, an intelligent cleaning regulation module and the like. The three-dimensional deformation sensing module realizes aluminum plate surface three-dimensional reconstruction and deformation characteristic spectrum generation through an industrial camera and an algorithm; the surface residue detection module identifies residue distribution and classification by using a laser speckle interferometer and the like; the thermal stress distribution analysis module inverts thermal stress by means of an infrared focal plane array; the vibration spectrum identification module analyzes the equipment vibration signal; the processing track optimization module generates an optimized track based on an ant colony algorithm and the like; the environmental parameter fusion module generates a fusion decision index through data dimension reduction and correlation analysis; and the intelligent cleaning regulation and control module combines feedback and learning to optimize cleaning parameters. The system achieves multi-dimensional monitoring and intelligent cleaning regulation and control, and the machining precision and efficiency are improved.

The invention relates to optical plane correction, and discloses an infrared focal plane array non-uniformity correction method based on integral time adjustment, which comprises the following steps: for each pixel of an infrared focal plane array, respectively establishing a nonlinear response model representing an incidence relation among integral time, radiation flux and detector output response; according to the radiation distribution characteristics of the current scene and the independent response characteristics of each pixel, the optimal integral time is determined for each pixel through an adaptive optimization algorithm; dynamically updating the parameters of the nonlinear response model of each pixel based on the deviation between the actual output of the detector and the output of the nonlinear response model; and compensating the response nonlinear difference between different pixels based on the optimal integral time, and performing further linear compensation on the compensated signal based on a two-point correction formula. With the adoption of the method, the defects of a traditional correction method in the aspects of nonlinear correction, scene adaptation, drift adaptation and the like are overcome, and the imaging quality of the infrared focal plane array is effectively improved.

The invention discloses an infrared focal plane array attitude estimation method and device, and belongs to the technical field of rotary carrier attitude estimation, and the method comprises the steps: extracting the features of infrared focal plane array data through a sliding window, and obtaining the feature vectors of a plurality of windows; selecting a blocking mode by using an MLP decision network, and dividing the infrared focal plane array data in the window into a plurality of sub-blocks; calling a corresponding distributed LSTM model from a distributed LSTM model pool to estimate the attitude angle sine and cosine values of each sub-block according to the infrared focal plane array data of each sub-block and the blocking mode; and fusing the attitude angle sine and cosine values of the sub-blocks based on a self-attention mechanism, and converting the fused attitude angle sine and cosine values into an attitude angle under an angle system to obtain an infrared focal plane array attitude estimation result. The method improves the precision and real-time performance of attitude angle estimation, and can be widely applied to attitude estimation of a high-speed rotating carrier.

The invention relates to the field of mid-infrared focal plane array spectral imagers, and discloses a mid-infrared focal plane array spectral imager and a spectral imaging method thereof.The mid-infrared focal plane array spectral imager comprises a focal plane array, the focal plane array comprises a plurality of pixels, and the pixels are arranged in the focal plane array. Wherein each pixel comprises a PIN heterojunction and a CdS layer arranged at the interface of the PIN heterojunction, and the imaging method comprises the following steps: carrying out spectrum training on each pixel in a focal plane array of the mid-infrared focal plane array spectrum imager, and establishing an independent spectrum model for each pixel so as to form a spectrum model cube; performing spectrum reconstruction on each pixel in the focal plane array based on the spectrum model cube; and combining the reconstructed spectrums of all the pixel points to generate a spectral imaging result. The invention solves the problem that the prior art lacks a spectral imager for the mid-infrared focal plane, and has the characteristics of low cost, chip and simple process.

The invention provides a manufacturing method of a type-II superlattice medium-wave infrared focal plane array chip and an infrared detector, and belongs to the field of infrared focal plane array chips. The problem that in the prior art, the surface leakage current of an infrared focal plane array chip is large due to the fact that the mesa etching depth is large is solved. The method comprises the following steps: growing and cleaning an epitaxial material; hard mask deposition, mesa photoetching and etching: obtaining a required mesa pattern on the hard mask through a photoetching technology, then etching an epitaxial material, etching the epitaxial material to form the mesa pattern, the mesa pattern comprising an upper electrode region and a lower electrode region, etching the upper electrode region to the boundary of the barrier layer and the absorption region, and etching the lower electrode region to the boundary of the barrier layer and the absorption region; etching a lower electrode region to the lower ohmic contact layer; manufacturing a metal electrode; a connecting piece is manufactured on the metal electrode to be connected with a reading circuit, and manufacturing of the infrared focal plane array chip is completed; the invention is applied to the II-type superlattice medium-wave infrared detector.

The invention discloses a method and equipment for generating a decoy jamming bomb discrimination model, and belongs to the technical field of infrared homing terminal guidance, and the method comprises the steps: obtaining a radiation sequence and an attitude sequence which are consistent in time sequence based on an original image outputted by an infrared focal plane array in a seeker and attitude data of a bomb body outputted by an inertial measurement unit; coupling the radiation sequence and the attitude sequence by using a first encoder in a preset network to obtain a space-time embedded vector; adjusting a single-layer full-connection classification head in a preset network according to the space-time embedding vector; constructing an initial discrimination model according to the first encoder and the adjusted single-layer full-connection classification head; obtaining a bait sequence according to the limit value of the physical parameter of the bait jamming bomb; obtaining an intermediate discrimination model according to the initial discrimination model and the bait sequence; and training the intermediate discrimination model by using the bait sequence, and the radiation sequence and the attitude sequence which are consistent in time sequence to obtain a target discrimination model which can reduce the false alarm rate of the bait jamming bomb.

The present application provides an uncooled infrared detector readout circuit and an uncooled infrared detector. The readout circuit comprises an uncooled infrared focal plane array (10), a pixel gating module (20), a logic control module (70), and a readout circuit module (40). The uncooled infrared focal plane array (10) comprises a plurality of infrared sensitive pixels (101) arranged in an array; the pixel gating module (20) is connected to the infrared sensitive pixels (101); the logic control module (70) and the pixel gating module (20) are connected to some infrared sensitive pixels by means of a logic gate circuit (80), and the logic control module (70) is configured to be capable of controlling none of the infrared sensitive pixels connected to the logic control module (70) to be gated; and the readout circuit module (40) is capable of performing signal readout on the gated infrared sensitive pixels.

The invention provides an infrared image non-uniformity correction method, image processing equipment and a storage medium, and the method comprises the steps: subtracting estimated global fixed pattern noise from a current observation frame, obtaining a preliminary correction image, carrying out the analysis and calculation of local fixed pattern noise based on continuous multiple frames of preliminary correction images, and carrying out the secondary filtering of the local fixed pattern noise. According to the two-stage processing mechanism, the observation image is corrected based on the inherent global fixed pattern noise of the infrared focal plane array and the local fixed pattern noise generated due to scene change, time consistency and space difference are considered, and the fixed pattern noise is effectively removed. According to the method, extra calibration is not needed, the fixed pattern noise can be stably extracted, the dynamic self-adaptive capability is achieved, and the quality and usability of the infrared image in a complex environment are improved.

The invention discloses a dynamic management method and device for power consumption of a thermal infrared imager and a medium, and the method comprises the steps: S1, dividing a reading circuit of an infrared focal plane array into a plurality of independent power domains, and configuring an independent power switch and a voltage / frequency adjustment module for each power domain; s2, collecting and analyzing an output signal of each pixel of the infrared focal plane array in real time; s3, dynamically controlling the power supply state of each power domain based on the analysis result; and S4, adjusting the global bias voltage and the global clock frequency based on the overall working mode and the scene content prediction result of the thermal infrared imager. Through a local and global combined control strategy, invalid energy consumption is greatly reduced, and the cruising ability of the thermal infrared imager is remarkably improved.

The present invention discloses a timing editing method and test system for testing infrared focal plane array devices. The method includes: decomposing the timing based on the timing minimum unit as a reference, decomposing to obtain a set of timing minimum units, selecting and defining the output interface corresponding to each timing minimum unit; determining the required timing minimum unit according to the test requirements, sorting and reorganizing the determined timing minimum units according to the analysis results based on the input operation formula through semantic analysis, and obtaining the driving timing; determining the driving timing based on the test requirements, completing the timing editing if it meets the requirements, otherwise re-editing the driving timing. The present invention can simplify the timing editing operation used in infrared focal plane array device testing, making the timing editing universal. When different devices require different driving timings, editing the timing is simpler, and adjustment during the test process can be more easily achieved, making it easy to operate.

The invention discloses an infrared focal plane array MEMS chip and a preparation method thereof. The chip comprises a readout circuit wafer, a getter module arranged on the readout circuit wafer and a suspended pixel structure located above the getter module. The preparation method comprises the following main steps: after a medium structure with a gap ring and a top micropore is formed, melting and leveling a low-melting-point material at a high temperature, depositing a getter body through the micropore, then sealing the getter body, and finally synchronously forming a suspended pixel structure and a suspended getter structure through a release process. The getter module is integrated below the pixel, the chip is sealed and protected in the whole chip manufacturing process, the low-melting-point material can be leveled, exposed and activated through heating after packaging, the packaging vacuum degree and reliability are remarkably improved, and meanwhile device miniaturization is facilitated.

According to the first electrode structure of the infrared focal plane detector chip and the preparation method, an N-type substrate forms a junction in a diffusion or ion implantation mode, and a mesa structure is prepared and formed through wet etching or dry etching; the electrode layer is directly prepared on the table top of the substrate material and forms ohmic contact with the table top of the substrate; the passivation layer is of a double-layer passivation film structure, and the indium column layer is prepared through photoetching development, a coating machine and a stripping process and is in direct contact with the exposed electrode layer; the infrared focal plane array photoelectric sensor is based on mature semiconductor processes such as magnetron sputtering, photoetching and wet etching, does not need to add special equipment, can directly adapt to an existing production line, reduces the cost of technology upgrading and industrial application, and lays a foundation for large-scale application of low-cost, large-size and small-pixel infrared focal plane array photoelectric sensors.

The application discloses a non-refrigeration infrared focal plane dual-channel column-level readout circuit and method, relates to the technical field of infrared focal plane array detector, and solves the problem of frame frequency reduction of a non-refrigeration infrared focal plane array detector under a large array. The technical scheme is as follows: the circuit comprises a mirror bridge circuit, a pixel array biasing circuit and a pixel array; the mirror bridge circuit is used for providing a bias voltage for the pixel array biasing circuit; the pixel array biasing circuit is used for providing a bias current for the pixel array; the pixel array biasing circuit comprises a first channel-level biasing circuit and a second channel-level biasing circuit; and a microbolometer gating switch is used for changing on-off timing, so that the microbolometer unit needing to be read out sequentially generates a detection output signal through the first channel-level biasing circuit or simultaneously generates a detection output signal through the first channel-level biasing circuit and the second channel-level biasing circuit, and adjustment of the readout frame frequency of the circuit is realized.

Techniques are provided for facilitating infrared imaging device coupling systems and methods. In one example, an infrared imaging device includes a printed circuit board (PCB) having a recess defined therein. The infrared imaging device further includes a conductive layer disposed within the recess and configured to provide a thermal path. The infrared imaging device further includes an infrared focal plane array (FPA) disposed at least partially within the recess and disposed on and thermally coupled to the conductive layer. The infrared FPA includes a detector array comprising a plurality of infrared detectors. Each infrared detector is configured to detect electromagnetic radiation. The infrared FPA further includes a readout circuit configured to perform a readout to obtain image data from each of the plurality of infrared detectors. The readout circuit is disposed on the conductive layer. Related methods and systems are also provided.

This invention relates to the field of infrared photoelectric detection, and particularly to a method for detecting defective elements in an infrared focal plane array based on infrared radiometric calibration data. The method includes: aligning an infrared imaging system with a calibration blackbody; acquiring image grayscale values ​​at different calibration blackbody temperatures and integration times; calculating the radiance values ​​corresponding to different temperatures of the calibration blackbody; fitting calibration coefficients for each pixel based on the image grayscale values ​​and radiance values; calculating the average calibration coefficient of all pixels based on the calibration coefficients of each pixel; calculating the coefficient offset of each pixel based on the average calibration coefficient of all pixels; calculating the coefficient offset ratio of each pixel based on the coefficient offset; and identifying pixels whose coefficient offset ratio meets preset abnormal conditions as defective elements. This method achieves dynamic and high-precision identification of defective elements through radiometric calibration at multiple temperature points and multiple integration times, improving the adaptability and reliability of the infrared imaging system.

This invention relates to the field of infrared focal plane array (FLAS) chip technology, specifically to an infrared FLAS chip and its fabrication method. The FLAS chip includes a readout circuit and a photosensitive substrate. A pixel array, comprising multiple pixels, is disposed on the photosensitive substrate. Each pixel is flip-chip connected to the readout circuit via interconnect units. At least some interconnect units include bumps and limiting connection components. The limiting connection components include a dielectric film and a slotted connector. A through-hole is formed in the dielectric film, and the slotted connector is disposed within the through-hole. The bumps are inserted into the slotted connector and soldered to it. One of the bumps and the limiting connection components is disposed on a corresponding pixel, and the other is disposed on the readout circuit. This invention effectively prevents the bumps from slipping or misaligning during flip-chip soldering. Furthermore, the limiting connection components do not encroach on the pixel area and are unaffected by pixel pitch, making it particularly suitable for infrared FLAS chips with ultra-small pixel pitches. The use of a dielectric film allows for precise fabrication of the through-hole, avoiding pattern distortion.

The invention discloses a high-sensitivity infrared multispectral imaging intelligent sensor, a refrigeration type medium-short wave infrared imaging detector comprises a metal Dewar, an MCT infrared focal plane array, a CMOS readout circuit and a Stirling cryocooler, the MCT infrared focal plane array and the CMOS readout circuit are arranged in the metal Dewar, and the Stirling cryocooler is arranged below the metal Dewar; the non-refrigeration type long-wave infrared imaging detector is a heat radiation type detector and comprises an absorption layer, a heat sensitive layer, supporting legs, an interconnection wire and a substrate, the absorption layer absorbs infrared radiation and then converts the infrared radiation into heat energy, the temperature of the sensitive layer changes, the change of resistance caused by the change of the temperature and the change of resistance value are converted into current or voltage signals, and the current or voltage signals are extracted. According to the invention, medium-short wave and long wave infrared combined imaging detection is adopted, the infrared spectrum is subdivided by adopting the multispectral filtering rotating wheel, the gas spectrum discrimination degree is high, and the imaging signal-to-noise ratio is high.

The application provides an infrared focal plane array readout circuit and a correction method, which comprises: a pixel circuit for receiving an infrared radiation signal and converting it into a pixel current; a bias current circuit for generating a bias current; a pixel voltage bias circuit for generating a first voltage varying with an ambient temperature and a second voltage not varying with the ambient temperature, and adding the first voltage and the second voltage as a pixel bias voltage output by the pixel voltage bias circuit, the pixel bias voltage serving as an input voltage of the pixel circuit and the bias current circuit; and a signal processing circuit receiving the pixel current and the bias current, integrating a current difference between the pixel current and the bias current, and converting an integration result into a voltage signal as an output signal of the non-refrigeration infrared focal plane readout circuit. The application can realize compensation of the drift of the response rate of the non-refrigeration infrared focal plane with the ambient temperature, improve the temperature stability of the response rate, and further improve the temperature measurement accuracy.

This disclosure provides a heterogeneous integrated dual-color infrared focal plane array chip, comprising: a dual-color readout circuit wafer (1), including a dual-color readout circuit substrate (11), and a top electrode contact (121) and a common electrode contact (122) spaced apart on the dual-color readout circuit substrate (11); a first detector wafer (2), bonded to the upper surface of the dual-color readout circuit wafer (1); a second detector wafer (3), after the substrate of the first detector wafer (2) is removed, bonded to the upper surface of the first detector wafer (2), and after the substrate of the second detector wafer (3) is removed, forming a heterogeneous integrated wafer with the first detector wafer (2); a pixel mesa array and a common electrode region, etched and formed on the first detector wafer (2) and the second detector wafer (3).

The application provides a type II superlattice mid-wave infrared focal plane array chip manufacturing method and an infrared detector, and belongs to the field of infrared focal plane array chips; solves the problem that the surface leakage current of the infrared focal plane array chip is large due to the deep mesa etching depth in the prior art; the method comprises the following steps: epitaxial material growth and cleaning; hard mask deposition, mesa lithography and etching: the required mesa pattern is obtained on the hard mask through the lithography technology, and then the epitaxial material is etched to form the mesa pattern, the mesa pattern comprises an upper electrode region and a lower electrode region, the upper electrode region is etched to the boundary between the barrier layer and the absorption zone, and the lower electrode region is etched to the lower ohmic contact layer; metal electrode manufacturing; the connection piece is connected with the readout circuit on the metal electrode, and the manufacturing of the infrared focal plane array chip is completed; and the application is applied to the type II superlattice mid-wave infrared detector.

The invention discloses a pixel reading circuit with a background current grading skimming function. The pixel reading circuit comprises a pixel circuit and a grading control current mirror image circuit, the pixel circuit comprises an injection circuit, an integrating capacitor circuit, a background current skimming circuit, a sampling capacitor circuit and a row selection control circuit; and output gate voltages Vg8 and Vg9 of the step control current mirror image circuit are respectively connected with Vg8 and Vg9 of the first input end and the second input end of the background current skimming circuit. The performance of the medium-wave infrared readout circuit under different background conditions can be considered at the same time; according to the reading circuit, a circuit skimming function can be closed under a low background, and relatively high injection efficiency is kept; an integrating capacitor of a unit circuit is not occupied, the capacitor area is adopted, and the method is suitable for a large-scale infrared focal plane array.

An uncooled infrared focal plane array readout integrated circuit (200), and a detector. The readout integrated circuit (200) comprises a pixel circuit module (10) and a readout integrated circuit bias module (30). The pixel circuit module (10) comprises a pixel resistor (13), a correction voltage terminal (VEB), a first node (N1), a pixel bias sub-module (12), and a correction sub-module (11), wherein the pixel bias sub-module (12) is connected to the pixel resistor (13), and the correction sub-module (11) is connected to the correction voltage terminal (VEB), so as to correct a deviation of an output result from the readout integrated circuit (200) caused by a resistance deviation of the pixel resistor (13). The readout integrated circuit bias module (30) comprises a working resistor (R), a bias voltage provision module (33), and a feedback module (32), wherein a connection terminal of the bias voltage provision module (33) is connected to the feedback module (32), and an output end thereof is connected to one end of the working resistor (R); the other end of the working resistor (R) is connected to the first node (N1); the voltage of the bias voltage provision module (33) fluctuates with at least one of a correction voltage (Veb) and a target temperature of the pixel resistor (13); and the feedback module (32) generates a feedback current (I0) which corresponds to the voltage (Vd) of the first node (N1), and provides the feedback current (I0) to the bias voltage provision module (33).

The invention discloses a scene-based infrared equipment blind pixel dynamic detection method and application thereof, and belongs to the technical field of infrared focal plane array blind pixel detection. The objective of the invention is to solve the technical problems that newly added blind pixels of impact vibration cannot be detected and real blind pixels and scene features are difficult to distinguish in the prior art. The method comprises the following steps: acquiring multiple frames of images; carrying out inter-frame displacement analysis to screen effective frames with effective displacement; calculating a local statistical deviation degree of pixels in the effective frames, and screening candidate abnormal points; performing multi-layer neighborhood gradient analysis on the candidate abnormal points, and distinguishing scene inherent feature points and suspected blind pixel points by analyzing a gradient relationship between the candidate abnormal points and multi-layer neighborhood points; and finally, carrying out time domain statistics on the suspected blind pixel points of multiple frames, and judging the blind pixel points as final blind pixels if the cumulative frequency exceeds a threshold value. According to the method, the newly added blind pixels can be dynamically detected during equipment operation, the blind pixels and scene features are accurately distinguished, and the false alarm rate is low.

The application discloses an infrared focal plane detector, comprising an infrared focal plane array and a microlens array, wherein the infrared focal plane array comprises an infrared detector chip, and the array surface of the microlens array is connected with the infrared detector chip. The application integrates the microlens array on the infrared focal plane array, thereby improving the light energy utilization rate of the infrared focal plane detector and further improving the sensitivity of the infrared focal plane detector. Meanwhile, the application also provides a manufacturing method of the infrared focal plane detector. First, a structure mold is processed, the structure mold has a concave surface matched with the shape of the microlens array, then a glass blank is molded to obtain the microlens array, a substrate is arranged at the bottom of the microlens array, then the array surface of the microlens array is adhered to the infrared detector chip, and the substrate is removed to obtain the infrared focal plane detector.

The invention provides a photovoltaic panel defect detection method based on Raspberry Pi, and the method comprises the steps: exciting a to-be-detected photovoltaic panel through a light source, and collecting a 16-frame original photovoltaic image sequence through an infrared focal plane array driven by an FPGA (Field Programmable Gate Array); carrying out frame average processing on the 16-frame original photovoltaic image sequence to obtain a background mean value image; according to the original photovoltaic image sequence and the background mean value image, calculating a deviation absolute value of a sample and a mean value by using a mean absolute error to obtain a deviation feature image representing defect information; de-noising processing is carried out on the deviation characteristic image by adopting a selective multi-stage median filtering algorithm and enhancement processing is carried out on the deviation characteristic image by adopting a self-adaptive linear segmentation stretching algorithm in sequence, so that a preprocessed photoluminescence image is obtained; making a training data set based on the preprocessed photoluminescence image, and training the constructed ACF-YOLO network model to obtain a photovoltaic defect detection model; and reasoning a to-be-detected image by using the photovoltaic defect detection model, and outputting a final photovoltaic module defect detection result. The invention solves the limitation of the existing photoluminescence (PL) defect detection instrument.

A method uses inpainting, whereby the ability to optimize the reconstruction of images at high resolution and sensitivity with minimal pixels is hard wired into the IRFPA. By combining several of these systems, or by selecting different pixels in the array to form images of different colors, hyperspectral images and 3-D tomograms can also be obtained with a significantly smaller number of pixels.

The invention discloses a pixel thermal conductivity test method for an infrared focal plane array, and the method comprises the steps: carrying out the resistance-temperature corresponding relation test of a pixel thermal conductivity test structure, and carrying out the current-voltage corresponding relation test; performing interpolation calculation on test data of the resistance-temperature corresponding relation test based on resistance data obtained by the current-voltage corresponding relation test to obtain a preliminary thermal conductivity value; fitting based on the initial thermal conductivity value to obtain activation energy of the heat-sensitive material; according to the activation energy and the resistance data obtained by testing the current-voltage corresponding relation, temperature data corresponding to the resistance data are obtained through calculation, and an intermediate thermal conductivity value is obtained through recalculation; and carrying out repeated iterative calculation on the activation energy, the temperature data and the intermediate thermal conductance values until the difference value of the intermediate thermal conductance values obtained by the last two times of calculation is smaller than a preset threshold value, and taking the intermediate thermal conductance value obtained by the last time of calculation as a final thermal conductance value. The measurement accuracy of the final thermal conductivity value can be improved.

The present invention relates to the technical field of infrared focal plane detectors, and provides a mesa-type infrared focal plane array and a method for preparing mesa electrodes. The array includes: a pixel electrode region, which has a plurality of pixel mesa as pixel electrodes, and each pixel mesa is separated by a first isolation groove with a width less than a preset width and a depth greater than a preset depth; a common electrode region, which has a plurality of common electrode mesa separated by the first isolation groove or the second isolation groove, and there is at least one second isolation groove around each common electrode mesa. The width and depth of the second isolation groove are both greater than those of the first isolation groove. The first and second isolation grooves are obtained synchronously by one etching. Conductive metal is deposited on the bottom of the first isolation groove, the bottom and side walls of the second isolation groove, and the surface of the common electrode mesa in the common electrode region to lead the common electrode from the bottom of the epitaxial material to the mesa surface. To solve the problem in the related art that it is difficult for an infrared focal plane array to take into account a relatively large mesa duty cycle, a relatively small lateral diffusion current, and a relatively stable conduction path.

The invention relates to the field of infrared photoelectric detection, in particular to an infrared focal plane array bad element detection method based on infrared radiation calibration data, and the method comprises the steps: enabling an infrared imaging system to be aligned with a calibration black body; collecting image gray values under different calibration black body temperatures and different integration times; calculating radiation brightness values corresponding to different temperatures of the calibration black body; fitting to obtain a calibration coefficient of each pixel point based on the image gray value and the radiation brightness value; calculating an average calibration coefficient of all the pixel points according to the calibration coefficient of each pixel point; calculating the coefficient offset of each pixel point based on the average calibration coefficient of all the pixel points; calculating the coefficient offset ratio of each pixel point according to the coefficient offset of each pixel point; and judging the pixel points of which the coefficient offset ratios meet a preset abnormal condition as bad elements. According to the method, dynamic and high-precision identification of bad elements is realized through radiation calibration under multiple temperature points and multiple integration time, and the adaptability and reliability of an infrared imaging system are improved.

The invention relates to the technical field of infrared focal plane detection, in particular to a detector output voltage nonlinearity test method, which comprises the following steps of: setting a detector to image a preset black body; respectively acquiring an output voltage value and an area array output voltage mean value of each pixel of the detector under the first preset effective integration time and the second preset effective integration time, and calculating a first correction coefficient and a second correction coefficient of each pixel through a two-point correction formula; obtaining an output voltage value of each pixel of the detector in a third preset effective integration time, and calculating a correction voltage value of each pixel and an area array correction voltage mean value; performing plane fitting according to the correction voltage values of all the pixels of the detector, calculating the residual root mean square of the correction voltage values of all the pixels of the detector and the corresponding fitting voltage values in the fitting plane, and calculating the nonlinearity of the area array voltage value curved surface; therefore, the overall nonlinearity condition of the area array can be intuitively evaluated.