7 results about "Infrared focal plane array" patented technology

The present application provides an uncooled infrared detector readout circuit and an uncooled infrared detector. The readout circuit comprises an uncooled infrared focal plane array (10), a pixel gating module (20), a logic control module (70), and a readout circuit module (40). The uncooled infrared focal plane array (10) comprises a plurality of infrared sensitive pixels (101) arranged in an array; the pixel gating module (20) is connected to the infrared sensitive pixels (101); the logic control module (70) and the pixel gating module (20) are connected to some infrared sensitive pixels by means of a logic gate circuit (80), and the logic control module (70) is configured to be capable of controlling none of the infrared sensitive pixels connected to the logic control module (70) to be gated; and the readout circuit module (40) is capable of performing signal readout on the gated infrared sensitive pixels.

Techniques are provided for facilitating infrared imaging device coupling systems and methods. In one example, an infrared imaging device includes a printed circuit board (PCB) having a recess defined therein. The infrared imaging device further includes a conductive layer disposed within the recess and configured to provide a thermal path. The infrared imaging device further includes an infrared focal plane array (FPA) disposed at least partially within the recess and disposed on and thermally coupled to the conductive layer. The infrared FPA includes a detector array comprising a plurality of infrared detectors. Each infrared detector is configured to detect electromagnetic radiation. The infrared FPA further includes a readout circuit configured to perform a readout to obtain image data from each of the plurality of infrared detectors. The readout circuit is disposed on the conductive layer. Related methods and systems are also provided.

This invention relates to the field of infrared focal plane array (FLAS) chip technology, specifically to an infrared FLAS chip and its fabrication method. The FLAS chip includes a readout circuit and a photosensitive substrate. A pixel array, comprising multiple pixels, is disposed on the photosensitive substrate. Each pixel is flip-chip connected to the readout circuit via interconnect units. At least some interconnect units include bumps and limiting connection components. The limiting connection components include a dielectric film and a slotted connector. A through-hole is formed in the dielectric film, and the slotted connector is disposed within the through-hole. The bumps are inserted into the slotted connector and soldered to it. One of the bumps and the limiting connection components is disposed on a corresponding pixel, and the other is disposed on the readout circuit. This invention effectively prevents the bumps from slipping or misaligning during flip-chip soldering. Furthermore, the limiting connection components do not encroach on the pixel area and are unaffected by pixel pitch, making it particularly suitable for infrared FLAS chips with ultra-small pixel pitches. The use of a dielectric film allows for precise fabrication of the through-hole, avoiding pattern distortion.

This disclosure provides a heterogeneous integrated dual-color infrared focal plane array chip, comprising: a dual-color readout circuit wafer (1), including a dual-color readout circuit substrate (11), and a top electrode contact (121) and a common electrode contact (122) spaced apart on the dual-color readout circuit substrate (11); a first detector wafer (2), bonded to the upper surface of the dual-color readout circuit wafer (1); a second detector wafer (3), after the substrate of the first detector wafer (2) is removed, bonded to the upper surface of the first detector wafer (2), and after the substrate of the second detector wafer (3) is removed, forming a heterogeneous integrated wafer with the first detector wafer (2); a pixel mesa array and a common electrode region, etched and formed on the first detector wafer (2) and the second detector wafer (3).

The application discloses an infrared focal plane array modulation transfer function testing device and method, which comprises an infrared light source, a knife-edge target, a manual rotating table, an imaging optical system, an infrared focal plane array detector, a three-dimensional displacement mechanism, a driving and data acquisition system and a control computer; the infrared light source comprises two light sources of a surface source black body and an integrating sphere, the surface source black body is used for testing a focal plane detector in a mid-infrared and far-infrared response band, and the integrating sphere light source is used for testing a short-wave infrared focal plane detector; the knife-edge target is installed on the manual rotating table, the imaging optical system is located between the knife-edge and the infrared focal plane array detector, the infrared focal plane array detector is arranged on the three-dimensional displacement mechanism, the driving and data acquisition system is connected with the infrared focal plane array detector and the control computer respectively, and the control computer is also connected with the three-dimensional displacement mechanism and the infrared light source respectively. The application has the advantages of wide application, convenient testing, comprehensive testing parameters, high testing accuracy and the like.

The application discloses an infrared focal plane array POCC parameter solidification loading method and particularly relates to the field of infrared image sensors; a basic pixel output matrix is collected at a calibration temperature, and initial POCC parameters are calculated; pixel response data is collected at multiple temperature points, and a temperature drift response model is constructed; dynamic prediction parameters are generated based on the initial parameters and the temperature drift model, and a temperature-adaptive POCC solidification matrix Pfused is formed through weighted nonlinear interpolation fusion; automatic loading is performed in the system power-on initialization stage; in the running process, if it is detected that the temperature change exceeds a set threshold, a corresponding subset in the Pfused is called to perform offset correction; the application has the characteristics of temperature drift sensing, autonomous updating and solidification availability, improves the offset correction accuracy and running stability of an infrared imaging system in a complex thermal environment, and is suitable for application scenarios of multiple types of infrared focal plane arrays such as satellite-borne, airborne and vehicle-borne infrared focal plane arrays.

The present application provides an uncooled infrared detector readout circuit (100), and an uncooled infrared detector and a control method therefor. The control method is applied to an uncooled infrared detector, and the uncooled infrared detector comprises an uncooled infrared focal plane array (10) comprising a plurality of infrared sensitive pixels (101) arranged in an array. The control method comprises: controlling the uncooled infrared detector to operate in a first operating state, wherein in the first operating state, some of the infrared sensitive pixels (101) are selected for signal readout therefrom; and controlling the uncooled infrared detector to switch to a second operating state, wherein in the second operating state, at least some of the infrared sensitive pixels (101) are selected for signal readout therefrom, and the number of the infrared sensitive pixels (101) selected in the second operating state is greater than the number of the infrared sensitive pixels (101) selected in the first operating state.