32 results about "Infrared focal plane array" patented technology

The invention relates to optical plane correction, and discloses an infrared focal plane array non-uniformity correction method based on integral time adjustment, which comprises the following steps: for each pixel of an infrared focal plane array, respectively establishing a nonlinear response model representing an incidence relation among integral time, radiation flux and detector output response; according to the radiation distribution characteristics of the current scene and the independent response characteristics of each pixel, the optimal integral time is determined for each pixel through an adaptive optimization algorithm; dynamically updating the parameters of the nonlinear response model of each pixel based on the deviation between the actual output of the detector and the output of the nonlinear response model; and compensating the response nonlinear difference between different pixels based on the optimal integral time, and performing further linear compensation on the compensated signal based on a two-point correction formula. With the adoption of the method, the defects of a traditional correction method in the aspects of nonlinear correction, scene adaptation, drift adaptation and the like are overcome, and the imaging quality of the infrared focal plane array is effectively improved.

The present application provides an uncooled infrared detector readout circuit and an uncooled infrared detector. The readout circuit comprises an uncooled infrared focal plane array (10), a pixel gating module (20), a logic control module (70), and a readout circuit module (40). The uncooled infrared focal plane array (10) comprises a plurality of infrared sensitive pixels (101) arranged in an array; the pixel gating module (20) is connected to the infrared sensitive pixels (101); the logic control module (70) and the pixel gating module (20) are connected to some infrared sensitive pixels by means of a logic gate circuit (80), and the logic control module (70) is configured to be capable of controlling none of the infrared sensitive pixels connected to the logic control module (70) to be gated; and the readout circuit module (40) is capable of performing signal readout on the gated infrared sensitive pixels.

The invention provides an infrared image non-uniformity correction method, image processing equipment and a storage medium, and the method comprises the steps: subtracting estimated global fixed pattern noise from a current observation frame, obtaining a preliminary correction image, carrying out the analysis and calculation of local fixed pattern noise based on continuous multiple frames of preliminary correction images, and carrying out the secondary filtering of the local fixed pattern noise. According to the two-stage processing mechanism, the observation image is corrected based on the inherent global fixed pattern noise of the infrared focal plane array and the local fixed pattern noise generated due to scene change, time consistency and space difference are considered, and the fixed pattern noise is effectively removed. According to the method, extra calibration is not needed, the fixed pattern noise can be stably extracted, the dynamic self-adaptive capability is achieved, and the quality and usability of the infrared image in a complex environment are improved.

The invention discloses a dynamic management method and device for power consumption of a thermal infrared imager and a medium, and the method comprises the steps: S1, dividing a reading circuit of an infrared focal plane array into a plurality of independent power domains, and configuring an independent power switch and a voltage / frequency adjustment module for each power domain; s2, collecting and analyzing an output signal of each pixel of the infrared focal plane array in real time; s3, dynamically controlling the power supply state of each power domain based on the analysis result; and S4, adjusting the global bias voltage and the global clock frequency based on the overall working mode and the scene content prediction result of the thermal infrared imager. Through a local and global combined control strategy, invalid energy consumption is greatly reduced, and the cruising ability of the thermal infrared imager is remarkably improved.

The invention discloses an infrared focal plane array MEMS chip and a preparation method thereof. The chip comprises a readout circuit wafer, a getter module arranged on the readout circuit wafer and a suspended pixel structure located above the getter module. The preparation method comprises the following main steps: after a medium structure with a gap ring and a top micropore is formed, melting and leveling a low-melting-point material at a high temperature, depositing a getter body through the micropore, then sealing the getter body, and finally synchronously forming a suspended pixel structure and a suspended getter structure through a release process. The getter module is integrated below the pixel, the chip is sealed and protected in the whole chip manufacturing process, the low-melting-point material can be leveled, exposed and activated through heating after packaging, the packaging vacuum degree and reliability are remarkably improved, and meanwhile device miniaturization is facilitated.

According to the first electrode structure of the infrared focal plane detector chip and the preparation method, an N-type substrate forms a junction in a diffusion or ion implantation mode, and a mesa structure is prepared and formed through wet etching or dry etching; the electrode layer is directly prepared on the table top of the substrate material and forms ohmic contact with the table top of the substrate; the passivation layer is of a double-layer passivation film structure, and the indium column layer is prepared through photoetching development, a coating machine and a stripping process and is in direct contact with the exposed electrode layer; the infrared focal plane array photoelectric sensor is based on mature semiconductor processes such as magnetron sputtering, photoetching and wet etching, does not need to add special equipment, can directly adapt to an existing production line, reduces the cost of technology upgrading and industrial application, and lays a foundation for large-scale application of low-cost, large-size and small-pixel infrared focal plane array photoelectric sensors.

Techniques are provided for facilitating infrared imaging device coupling systems and methods. In one example, an infrared imaging device includes a printed circuit board (PCB) having a recess defined therein. The infrared imaging device further includes a conductive layer disposed within the recess and configured to provide a thermal path. The infrared imaging device further includes an infrared focal plane array (FPA) disposed at least partially within the recess and disposed on and thermally coupled to the conductive layer. The infrared FPA includes a detector array comprising a plurality of infrared detectors. Each infrared detector is configured to detect electromagnetic radiation. The infrared FPA further includes a readout circuit configured to perform a readout to obtain image data from each of the plurality of infrared detectors. The readout circuit is disposed on the conductive layer. Related methods and systems are also provided.

This invention relates to the field of infrared photoelectric detection, and particularly to a method for detecting defective elements in an infrared focal plane array based on infrared radiometric calibration data. The method includes: aligning an infrared imaging system with a calibration blackbody; acquiring image grayscale values ​​at different calibration blackbody temperatures and integration times; calculating the radiance values ​​corresponding to different temperatures of the calibration blackbody; fitting calibration coefficients for each pixel based on the image grayscale values ​​and radiance values; calculating the average calibration coefficient of all pixels based on the calibration coefficients of each pixel; calculating the coefficient offset of each pixel based on the average calibration coefficient of all pixels; calculating the coefficient offset ratio of each pixel based on the coefficient offset; and identifying pixels whose coefficient offset ratio meets preset abnormal conditions as defective elements. This method achieves dynamic and high-precision identification of defective elements through radiometric calibration at multiple temperature points and multiple integration times, improving the adaptability and reliability of the infrared imaging system.

This invention relates to the field of infrared focal plane array (FLAS) chip technology, specifically to an infrared FLAS chip and its fabrication method. The FLAS chip includes a readout circuit and a photosensitive substrate. A pixel array, comprising multiple pixels, is disposed on the photosensitive substrate. Each pixel is flip-chip connected to the readout circuit via interconnect units. At least some interconnect units include bumps and limiting connection components. The limiting connection components include a dielectric film and a slotted connector. A through-hole is formed in the dielectric film, and the slotted connector is disposed within the through-hole. The bumps are inserted into the slotted connector and soldered to it. One of the bumps and the limiting connection components is disposed on a corresponding pixel, and the other is disposed on the readout circuit. This invention effectively prevents the bumps from slipping or misaligning during flip-chip soldering. Furthermore, the limiting connection components do not encroach on the pixel area and are unaffected by pixel pitch, making it particularly suitable for infrared FLAS chips with ultra-small pixel pitches. The use of a dielectric film allows for precise fabrication of the through-hole, avoiding pattern distortion.

The application provides an infrared focal plane array readout circuit and a correction method, which comprises: a pixel circuit for receiving an infrared radiation signal and converting it into a pixel current; a bias current circuit for generating a bias current; a pixel voltage bias circuit for generating a first voltage varying with an ambient temperature and a second voltage not varying with the ambient temperature, and adding the first voltage and the second voltage as a pixel bias voltage output by the pixel voltage bias circuit, the pixel bias voltage serving as an input voltage of the pixel circuit and the bias current circuit; and a signal processing circuit receiving the pixel current and the bias current, integrating a current difference between the pixel current and the bias current, and converting an integration result into a voltage signal as an output signal of the non-refrigeration infrared focal plane readout circuit. The application can realize compensation of the drift of the response rate of the non-refrigeration infrared focal plane with the ambient temperature, improve the temperature stability of the response rate, and further improve the temperature measurement accuracy.

This disclosure provides a heterogeneous integrated dual-color infrared focal plane array chip, comprising: a dual-color readout circuit wafer (1), including a dual-color readout circuit substrate (11), and a top electrode contact (121) and a common electrode contact (122) spaced apart on the dual-color readout circuit substrate (11); a first detector wafer (2), bonded to the upper surface of the dual-color readout circuit wafer (1); a second detector wafer (3), after the substrate of the first detector wafer (2) is removed, bonded to the upper surface of the first detector wafer (2), and after the substrate of the second detector wafer (3) is removed, forming a heterogeneous integrated wafer with the first detector wafer (2); a pixel mesa array and a common electrode region, etched and formed on the first detector wafer (2) and the second detector wafer (3).

The application provides a type II superlattice mid-wave infrared focal plane array chip manufacturing method and an infrared detector, and belongs to the field of infrared focal plane array chips; solves the problem that the surface leakage current of the infrared focal plane array chip is large due to the deep mesa etching depth in the prior art; the method comprises the following steps: epitaxial material growth and cleaning; hard mask deposition, mesa lithography and etching: the required mesa pattern is obtained on the hard mask through the lithography technology, and then the epitaxial material is etched to form the mesa pattern, the mesa pattern comprises an upper electrode region and a lower electrode region, the upper electrode region is etched to the boundary between the barrier layer and the absorption zone, and the lower electrode region is etched to the lower ohmic contact layer; metal electrode manufacturing; the connection piece is connected with the readout circuit on the metal electrode, and the manufacturing of the infrared focal plane array chip is completed; and the application is applied to the type II superlattice mid-wave infrared detector.

The invention discloses a pixel reading circuit with a background current grading skimming function. The pixel reading circuit comprises a pixel circuit and a grading control current mirror image circuit, the pixel circuit comprises an injection circuit, an integrating capacitor circuit, a background current skimming circuit, a sampling capacitor circuit and a row selection control circuit; and output gate voltages Vg8 and Vg9 of the step control current mirror image circuit are respectively connected with Vg8 and Vg9 of the first input end and the second input end of the background current skimming circuit. The performance of the medium-wave infrared readout circuit under different background conditions can be considered at the same time; according to the reading circuit, a circuit skimming function can be closed under a low background, and relatively high injection efficiency is kept; an integrating capacitor of a unit circuit is not occupied, the capacitor area is adopted, and the method is suitable for a large-scale infrared focal plane array.

An uncooled infrared focal plane array readout integrated circuit (200), and a detector. The readout integrated circuit (200) comprises a pixel circuit module (10) and a readout integrated circuit bias module (30). The pixel circuit module (10) comprises a pixel resistor (13), a correction voltage terminal (VEB), a first node (N1), a pixel bias sub-module (12), and a correction sub-module (11), wherein the pixel bias sub-module (12) is connected to the pixel resistor (13), and the correction sub-module (11) is connected to the correction voltage terminal (VEB), so as to correct a deviation of an output result from the readout integrated circuit (200) caused by a resistance deviation of the pixel resistor (13). The readout integrated circuit bias module (30) comprises a working resistor (R), a bias voltage provision module (33), and a feedback module (32), wherein a connection terminal of the bias voltage provision module (33) is connected to the feedback module (32), and an output end thereof is connected to one end of the working resistor (R); the other end of the working resistor (R) is connected to the first node (N1); the voltage of the bias voltage provision module (33) fluctuates with at least one of a correction voltage (Veb) and a target temperature of the pixel resistor (13); and the feedback module (32) generates a feedback current (I0) which corresponds to the voltage (Vd) of the first node (N1), and provides the feedback current (I0) to the bias voltage provision module (33).

The invention discloses a scene-based infrared equipment blind pixel dynamic detection method and application thereof, and belongs to the technical field of infrared focal plane array blind pixel detection. The objective of the invention is to solve the technical problems that newly added blind pixels of impact vibration cannot be detected and real blind pixels and scene features are difficult to distinguish in the prior art. The method comprises the following steps: acquiring multiple frames of images; carrying out inter-frame displacement analysis to screen effective frames with effective displacement; calculating a local statistical deviation degree of pixels in the effective frames, and screening candidate abnormal points; performing multi-layer neighborhood gradient analysis on the candidate abnormal points, and distinguishing scene inherent feature points and suspected blind pixel points by analyzing a gradient relationship between the candidate abnormal points and multi-layer neighborhood points; and finally, carrying out time domain statistics on the suspected blind pixel points of multiple frames, and judging the blind pixel points as final blind pixels if the cumulative frequency exceeds a threshold value. According to the method, the newly added blind pixels can be dynamically detected during equipment operation, the blind pixels and scene features are accurately distinguished, and the false alarm rate is low.

The application discloses an infrared focal plane detector, comprising an infrared focal plane array and a microlens array, wherein the infrared focal plane array comprises an infrared detector chip, and the array surface of the microlens array is connected with the infrared detector chip. The application integrates the microlens array on the infrared focal plane array, thereby improving the light energy utilization rate of the infrared focal plane detector and further improving the sensitivity of the infrared focal plane detector. Meanwhile, the application also provides a manufacturing method of the infrared focal plane detector. First, a structure mold is processed, the structure mold has a concave surface matched with the shape of the microlens array, then a glass blank is molded to obtain the microlens array, a substrate is arranged at the bottom of the microlens array, then the array surface of the microlens array is adhered to the infrared detector chip, and the substrate is removed to obtain the infrared focal plane detector.

The invention provides a photovoltaic panel defect detection method based on Raspberry Pi, and the method comprises the steps: exciting a to-be-detected photovoltaic panel through a light source, and collecting a 16-frame original photovoltaic image sequence through an infrared focal plane array driven by an FPGA (Field Programmable Gate Array); carrying out frame average processing on the 16-frame original photovoltaic image sequence to obtain a background mean value image; according to the original photovoltaic image sequence and the background mean value image, calculating a deviation absolute value of a sample and a mean value by using a mean absolute error to obtain a deviation feature image representing defect information; de-noising processing is carried out on the deviation characteristic image by adopting a selective multi-stage median filtering algorithm and enhancement processing is carried out on the deviation characteristic image by adopting a self-adaptive linear segmentation stretching algorithm in sequence, so that a preprocessed photoluminescence image is obtained; making a training data set based on the preprocessed photoluminescence image, and training the constructed ACF-YOLO network model to obtain a photovoltaic defect detection model; and reasoning a to-be-detected image by using the photovoltaic defect detection model, and outputting a final photovoltaic module defect detection result. The invention solves the limitation of the existing photoluminescence (PL) defect detection instrument.

A method uses inpainting, whereby the ability to optimize the reconstruction of images at high resolution and sensitivity with minimal pixels is hard wired into the IRFPA. By combining several of these systems, or by selecting different pixels in the array to form images of different colors, hyperspectral images and 3-D tomograms can also be obtained with a significantly smaller number of pixels.

The invention discloses a pixel thermal conductivity test method for an infrared focal plane array, and the method comprises the steps: carrying out the resistance-temperature corresponding relation test of a pixel thermal conductivity test structure, and carrying out the current-voltage corresponding relation test; performing interpolation calculation on test data of the resistance-temperature corresponding relation test based on resistance data obtained by the current-voltage corresponding relation test to obtain a preliminary thermal conductivity value; fitting based on the initial thermal conductivity value to obtain activation energy of the heat-sensitive material; according to the activation energy and the resistance data obtained by testing the current-voltage corresponding relation, temperature data corresponding to the resistance data are obtained through calculation, and an intermediate thermal conductivity value is obtained through recalculation; and carrying out repeated iterative calculation on the activation energy, the temperature data and the intermediate thermal conductance values until the difference value of the intermediate thermal conductance values obtained by the last two times of calculation is smaller than a preset threshold value, and taking the intermediate thermal conductance value obtained by the last time of calculation as a final thermal conductance value. The measurement accuracy of the final thermal conductivity value can be improved.

The invention relates to the field of infrared photoelectric detection, in particular to an infrared focal plane array bad element detection method based on infrared radiation calibration data, and the method comprises the steps: enabling an infrared imaging system to be aligned with a calibration black body; collecting image gray values under different calibration black body temperatures and different integration times; calculating radiation brightness values corresponding to different temperatures of the calibration black body; fitting to obtain a calibration coefficient of each pixel point based on the image gray value and the radiation brightness value; calculating an average calibration coefficient of all the pixel points according to the calibration coefficient of each pixel point; calculating the coefficient offset of each pixel point based on the average calibration coefficient of all the pixel points; calculating the coefficient offset ratio of each pixel point according to the coefficient offset of each pixel point; and judging the pixel points of which the coefficient offset ratios meet a preset abnormal condition as bad elements. According to the method, dynamic and high-precision identification of bad elements is realized through radiation calibration under multiple temperature points and multiple integration time, and the adaptability and reliability of an infrared imaging system are improved.

The invention relates to the technical field of infrared focal plane detection, in particular to a detector output voltage nonlinearity test method, which comprises the following steps of: setting a detector to image a preset black body; respectively acquiring an output voltage value and an area array output voltage mean value of each pixel of the detector under the first preset effective integration time and the second preset effective integration time, and calculating a first correction coefficient and a second correction coefficient of each pixel through a two-point correction formula; obtaining an output voltage value of each pixel of the detector in a third preset effective integration time, and calculating a correction voltage value of each pixel and an area array correction voltage mean value; performing plane fitting according to the correction voltage values of all the pixels of the detector, calculating the residual root mean square of the correction voltage values of all the pixels of the detector and the corresponding fitting voltage values in the fitting plane, and calculating the nonlinearity of the area array voltage value curved surface; therefore, the overall nonlinearity condition of the area array can be intuitively evaluated.

According to the back thinning and polishing preparation method for the infrared focal plane array chip assembly, indium columns are evenly distributed between the lower surface of an indium antimonide chip and the upper surface of a circuit, and filling glue is poured between the lower surface of the indium antimonide chip and the upper surface of the circuit in a vacuum mode; the back thinning and polishing preparation method comprises the steps of inverted interconnection, epoxy glue filling and curing, quartz substrate bonding, single-point diamond turning, chemical mechanical polishing, cleaning and corrosion. According to the method, a single-point turning machining mode is adopted, so that damage and crack are not generated, pit-shaped point stress damage is not generated, the PV value is smaller than 1 micron, the machining process is controllable, a traditional downward pressurization grinding mode is changed, the difficulties of pressurization cracking and non-uniform thickness faced by module surface type warping are overcome, and the method can be widely applied to infrared focal plane array chips.

The application discloses a superlattice multi-injector infrared focal plane array optimization method, and belongs to the technical field of infrared detection. The method selects a type of superlattice material system and controls an energy band, a collector region adopts an InAs / GaSb / AlSb / GaSb superlattice structure, an emission region adopts an InAs / AlSb superlattice structure and forms a type II energy band alignment, a transverse multi-micro-injector pixel structure is designed, the total cross-sectional area is kept unchanged and the spacing is less than a carrier diffusion length, and after layered device preparation, two-dimensional array integration and FDTD simulation optimization, 1-20 mu m wide band response is realized. The application solves the inherent contradiction between sensitivity and responsivity in the traditional technology, maintains high sensitivity and high speed response, significantly improves quantum efficiency and responsivity, reduces research and development cost, and is suitable for strategic early warning, night vision and other high-precision imaging scenes.

The application discloses an infrared focal plane array modulation transfer function testing device and method, which comprises an infrared light source, a knife-edge target, a manual rotating table, an imaging optical system, an infrared focal plane array detector, a three-dimensional displacement mechanism, a driving and data acquisition system and a control computer; the infrared light source comprises two light sources of a surface source black body and an integrating sphere, the surface source black body is used for testing a focal plane detector in a mid-infrared and far-infrared response band, and the integrating sphere light source is used for testing a short-wave infrared focal plane detector; the knife-edge target is installed on the manual rotating table, the imaging optical system is located between the knife-edge and the infrared focal plane array detector, the infrared focal plane array detector is arranged on the three-dimensional displacement mechanism, the driving and data acquisition system is connected with the infrared focal plane array detector and the control computer respectively, and the control computer is also connected with the three-dimensional displacement mechanism and the infrared light source respectively. The application has the advantages of wide application, convenient testing, comprehensive testing parameters, high testing accuracy and the like.

The invention discloses a microorganism dynamic monitoring and management system, which comprises a monitoring terminal module integrated with an infrared radiation detection unit, an environmental parameter detection unit, a data preprocessing unit and a power supply unit, and belongs to the technical field of microorganism dynamic monitoring. The invention aims to overcome the defects of insufficient thermal sensitivity, serious noise interference, weak data processing capability and the like in the prior art and solve the problem that tiny temperature change generated by microbial metabolism cannot be accurately captured, and achieves the technical effects that through cooperative work of the infrared radiation detection unit and the environmental parameter detection unit, the temperature change caused by microbial metabolism can be accurately captured; non-contact synchronous acquisition of microbial metabolism heat signals and multi-dimensional environment data is realized, and the detection real-time performance is improved while sample pollution is avoided; the infrared focal plane array is combined with a dynamic calibration technology, noise interference is effectively eliminated, high-precision thermal imaging with sub-milliopen-level temperature resolution is achieved, and subtle changes of microbial metabolic activities are accurately captured.

The application discloses an infrared focal plane array attitude measurement image defect pixel repairing method and device, and belongs to the technical field of infrared imaging and image processing, which comprises the following steps: performing linear fitting on each row and each column of an infrared focal plane array attitude measurement image containing a fault defect, and calculating row residual sum of squares and column residual sum of squares; arranging the row residual sum of squares and the column residual sum of squares in descending order, taking the intersection of the row and the column corresponding to the K largest residuals, and generating an initial positioning mask of the defect pixel; for each defect pixel, adaptively disabling the pollution direction in four one-dimensional windows of a horizontal direction, a vertical direction and double diagonal lines, and establishing a multi-direction robust regression model by using the pixel samples which are not polluted, and then extrapolating to obtain a multi-direction prediction value of the defect pixel; and using the average value of the multi-direction prediction value of each defect pixel as the repair gray value of the defect pixel. The application can realize blind diagnosis and high-precision repair of defects under the conditions of a single frame, no training and no external reference.

The invention discloses an infrared focal plane array attitude measurement image defect pixel repairing method and device, and belongs to the technical field of infrared imaging and image processing, and the method comprises the steps: carrying out the line-by-line and column-by-column linear fitting of an infrared focal plane array attitude measurement image containing a fault defect, and calculating the line residual sum of squares and the column residual sum of squares; arranging the sum of squares of the row residual errors and the sum of squares of the column residual errors according to a descending order, and taking row and column intersection sets corresponding to the first K maximum residual errors to generate an initial positioning mask of the defective pixels; for each defect pixel, the pollution direction is adaptively forbidden in four one-dimensional windows including the transverse window, the longitudinal window and the double-diagonal window, a multi-direction robust regression model is established by using unpolluted pixel samples, and a multi-direction predicted value of the defect pixel is obtained through extrapolation; and using an average value of the multi-direction predicted values of each defective pixel as a repair gray value of the defective pixel. According to the method, defect blind diagnosis and high-precision repair can be realized under the conditions of single frame, no training and no external reference.

The application discloses an infrared focal plane array POCC parameter solidification loading method and particularly relates to the field of infrared image sensors; a basic pixel output matrix is collected at a calibration temperature, and initial POCC parameters are calculated; pixel response data is collected at multiple temperature points, and a temperature drift response model is constructed; dynamic prediction parameters are generated based on the initial parameters and the temperature drift model, and a temperature-adaptive POCC solidification matrix Pfused is formed through weighted nonlinear interpolation fusion; automatic loading is performed in the system power-on initialization stage; in the running process, if it is detected that the temperature change exceeds a set threshold, a corresponding subset in the Pfused is called to perform offset correction; the application has the characteristics of temperature drift sensing, autonomous updating and solidification availability, improves the offset correction accuracy and running stability of an infrared imaging system in a complex thermal environment, and is suitable for application scenarios of multiple types of infrared focal plane arrays such as satellite-borne, airborne and vehicle-borne infrared focal plane arrays.

The present application provides an uncooled infrared detector readout circuit (100), and an uncooled infrared detector and a control method therefor. The control method is applied to an uncooled infrared detector, and the uncooled infrared detector comprises an uncooled infrared focal plane array (10) comprising a plurality of infrared sensitive pixels (101) arranged in an array. The control method comprises: controlling the uncooled infrared detector to operate in a first operating state, wherein in the first operating state, some of the infrared sensitive pixels (101) are selected for signal readout therefrom; and controlling the uncooled infrared detector to switch to a second operating state, wherein in the second operating state, at least some of the infrared sensitive pixels (101) are selected for signal readout therefrom, and the number of the infrared sensitive pixels (101) selected in the second operating state is greater than the number of the infrared sensitive pixels (101) selected in the first operating state.

The invention belongs to the technical field of image transmission, and particularly relates to an infrared seeker image transmission method and system based on wavelet transform compressed sensing, and the method comprises the following specific steps: S1, collecting the infrared radiation information of a target and a background through an infrared focal plane array, and outputting original infrared image data with a fixed resolution and a fixed frame frequency, meanwhile, angular velocity data of the inertial measurement unit of the seeker are synchronously obtained. On the basis of db6 wavelets, a wavelet base support domain is dynamically adjusted according to the edge gray level jump amplitude of the infrared image, a hard threshold denoising and energy retention strategy is adopted for a low-frequency coefficient after wavelet transformation, and a layered processing mode of soft threshold compression is adopted for a high-frequency coefficient, so that the resolution of the infrared image is improved. The method has the advantages that the edge distortion of the infrared image is effectively reduced, and the target recognition precision is improved.