The invention discloses a wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and a method for producing the same, wherein a double-wafer bonding mode is adopted to produce an infrared detector and realize the wafer-level encapsulation, a complementary metal-oxide-semiconductor integrated chip (CMOSIC) and a micro-electromechanical systems (MEMS) device are separately produced, so the integration of the CMOSIC is realized, the production flexibility of the MEMS infrared detector device is also increased, and the wafer-level encapsulation can be realized at the same time. The invention has the advantages that: a reflector for a complementary metal-oxide-semiconductor integrated chip (CMOS) reading circuit and a resonance absorption structure is produced on a wafer, the other wafer is utilized to produce the MEMS structural part of the IRFPA and is simultaneously used for producing the infrared window of the IRFPA, the resonance absorption structure is utilized to provide the infrared absorption efficiency of the infrared IRFPA device, the wafer-level encapsulation of the IRFPA device is also realized at the same time, so the size and the production cost of the IRFPA device are benefited to be reduced.