67 results about "Infrared focal plane array" patented technology

The invention relates to the technical field of aluminum plate processing, and discloses an aluminum plate processing cleaning intelligent monitoring system, which comprises a three-dimensional deformation sensing module, a surface residue detection module, a thermal stress distribution analysis module, a vibration spectrum identification module, a processing track optimization module, an environmental parameter fusion module, an intelligent cleaning regulation module and the like. The three-dimensional deformation sensing module realizes aluminum plate surface three-dimensional reconstruction and deformation characteristic spectrum generation through an industrial camera and an algorithm; the surface residue detection module identifies residue distribution and classification by using a laser speckle interferometer and the like; the thermal stress distribution analysis module inverts thermal stress by means of an infrared focal plane array; the vibration spectrum identification module analyzes the equipment vibration signal; the processing track optimization module generates an optimized track based on an ant colony algorithm and the like; the environmental parameter fusion module generates a fusion decision index through data dimension reduction and correlation analysis; and the intelligent cleaning regulation and control module combines feedback and learning to optimize cleaning parameters. The system achieves multi-dimensional monitoring and intelligent cleaning regulation and control, and the machining precision and efficiency are improved.

The invention discloses an infrared detector focal plane pixel evaluation and selection method and device based on a z score. The infrared detector focal plane pixel evaluation and selection method comprises the steps of obtaining to-be-evaluated data of each pixel in an infrared focal plane array device; preprocessing the to-be-evaluated data to filter bad pixels to obtain performance index data of each pixel after filtering; calculating an average value and a standard deviation of each performance index of all the filtered pixels; calculating a z score of the performance index corresponding to each pixel, and summarizing and adding the z scores of the performance indexes corresponding to each pixel to obtain a final z score result of the comprehensive performance index of each pixel; and selecting the pixel with the highest z score in each row of the infrared focal plane array device according to the final z score result of each pixel, and registering the selected pixel with the highest z score as the optimal pixel, so that all performance indexes are integrated, the comprehensively evaluated and registered optimal pixel is obtained, each index is improved to a certain extent, and the data quality is improved.

The invention relates to optical plane correction, and discloses an infrared focal plane array non-uniformity correction method based on integral time adjustment, which comprises the following steps: for each pixel of an infrared focal plane array, respectively establishing a nonlinear response model representing an incidence relation among integral time, radiation flux and detector output response; according to the radiation distribution characteristics of the current scene and the independent response characteristics of each pixel, the optimal integral time is determined for each pixel through an adaptive optimization algorithm; dynamically updating the parameters of the nonlinear response model of each pixel based on the deviation between the actual output of the detector and the output of the nonlinear response model; and compensating the response nonlinear difference between different pixels based on the optimal integral time, and performing further linear compensation on the compensated signal based on a two-point correction formula. With the adoption of the method, the defects of a traditional correction method in the aspects of nonlinear correction, scene adaptation, drift adaptation and the like are overcome, and the imaging quality of the infrared focal plane array is effectively improved.

The invention discloses an infrared focal plane array attitude estimation method and device, and belongs to the technical field of rotary carrier attitude estimation, and the method comprises the steps: extracting the features of infrared focal plane array data through a sliding window, and obtaining the feature vectors of a plurality of windows; selecting a blocking mode by using an MLP decision network, and dividing the infrared focal plane array data in the window into a plurality of sub-blocks; calling a corresponding distributed LSTM model from a distributed LSTM model pool to estimate the attitude angle sine and cosine values of each sub-block according to the infrared focal plane array data of each sub-block and the blocking mode; and fusing the attitude angle sine and cosine values of the sub-blocks based on a self-attention mechanism, and converting the fused attitude angle sine and cosine values into an attitude angle under an angle system to obtain an infrared focal plane array attitude estimation result. The method improves the precision and real-time performance of attitude angle estimation, and can be widely applied to attitude estimation of a high-speed rotating carrier.

The invention relates to the field of mid-infrared focal plane array spectral imagers, and discloses a mid-infrared focal plane array spectral imager and a spectral imaging method thereof.The mid-infrared focal plane array spectral imager comprises a focal plane array, the focal plane array comprises a plurality of pixels, and the pixels are arranged in the focal plane array. Wherein each pixel comprises a PIN heterojunction and a CdS layer arranged at the interface of the PIN heterojunction, and the imaging method comprises the following steps: carrying out spectrum training on each pixel in a focal plane array of the mid-infrared focal plane array spectrum imager, and establishing an independent spectrum model for each pixel so as to form a spectrum model cube; performing spectrum reconstruction on each pixel in the focal plane array based on the spectrum model cube; and combining the reconstructed spectrums of all the pixel points to generate a spectral imaging result. The invention solves the problem that the prior art lacks a spectral imager for the mid-infrared focal plane, and has the characteristics of low cost, chip and simple process.

The invention provides an uncooled infrared detector reading circuit, an infrared detector and a control method of the infrared detector. The control method is applied to the uncooled infrared detector, the uncooled infrared detector comprises an uncooled infrared focal plane array with multiple rows and columns of infrared sensitive pixels, and the control method comprises the following steps: controlling the uncooled infrared detector to execute a first working state; in the first working state, part of the infrared sensitive pixels are gated so that signals can be read out; controlling the non-refrigeration infrared detector to be switched to a second working state; in the second working state, at least part of the infrared sensitive pixels are gated so that signals can be read out; wherein the number of the infrared sensitive pixels gated in the second working state is greater than the number of the infrared sensitive pixels gated in the first working state.

The invention provides an uncooled infrared detector reading circuit and an uncooled infrared detector. The reading circuit comprises an uncooled infrared focal plane array, a pixel gating module, a logic control module and a reading circuit module. The uncooled infrared focal plane array comprises a plurality of rows and columns of infrared sensitive pixels; the pixel gating module is connected with each infrared sensitive pixel; the logic control module and the pixel gating module are connected with a part of infrared sensitive pixels through a logic gate circuit, and the logic control module is configured to be capable of controlling the infrared sensitive pixels connected with the logic control module not to be gated and controlling the infrared sensitive pixels not connected with the logic control module to be gated; and the readout circuit module can be used for carrying out signal readout on the gated infrared sensitive pixels.

The invention provides a manufacturing method of a type-II superlattice medium-wave infrared focal plane array chip and an infrared detector, and belongs to the field of infrared focal plane array chips. The problem that in the prior art, the surface leakage current of an infrared focal plane array chip is large due to the fact that the mesa etching depth is large is solved. The method comprises the following steps: growing and cleaning an epitaxial material; hard mask deposition, mesa photoetching and etching: obtaining a required mesa pattern on the hard mask through a photoetching technology, then etching an epitaxial material, etching the epitaxial material to form the mesa pattern, the mesa pattern comprising an upper electrode region and a lower electrode region, etching the upper electrode region to the boundary of the barrier layer and the absorption region, and etching the lower electrode region to the boundary of the barrier layer and the absorption region; etching a lower electrode region to the lower ohmic contact layer; manufacturing a metal electrode; a connecting piece is manufactured on the metal electrode to be connected with a reading circuit, and manufacturing of the infrared focal plane array chip is completed; the invention is applied to the II-type superlattice medium-wave infrared detector.

The invention discloses a method and equipment for generating a decoy jamming bomb discrimination model, and belongs to the technical field of infrared homing terminal guidance, and the method comprises the steps: obtaining a radiation sequence and an attitude sequence which are consistent in time sequence based on an original image outputted by an infrared focal plane array in a seeker and attitude data of a bomb body outputted by an inertial measurement unit; coupling the radiation sequence and the attitude sequence by using a first encoder in a preset network to obtain a space-time embedded vector; adjusting a single-layer full-connection classification head in a preset network according to the space-time embedding vector; constructing an initial discrimination model according to the first encoder and the adjusted single-layer full-connection classification head; obtaining a bait sequence according to the limit value of the physical parameter of the bait jamming bomb; obtaining an intermediate discrimination model according to the initial discrimination model and the bait sequence; and training the intermediate discrimination model by using the bait sequence, and the radiation sequence and the attitude sequence which are consistent in time sequence to obtain a target discrimination model which can reduce the false alarm rate of the bait jamming bomb.

The invention discloses an infrared image non-uniformity correction method based on notch filtering and guide filtering, which comprises the following steps of: inputting an infrared focal plane array image, performing discrete Fourier transform on the input image to obtain an amplitude spectrum and a phase spectrum, predicting a central frequency spectrum area of the amplitude spectrum, estimating a notch filter compensation parameter, and correcting the infrared image non-uniformity. Further constructing a notch filter; enabling the amplitude spectrum to pass through the constructed notch filter to obtain a new amplitude spectrum after filtering, and obtaining a filtered background image layer through inverse discrete Fourier transform by utilizing the new amplitude spectrum after filtering and the original phase spectrum; carrying out subtraction on the original input infrared focal plane array image and the filtered background image layer to obtain a noise image, carrying out weighted improvement on a regularization coefficient by utilizing anisotropic guided filtering, and extracting a part of detail image layers from the noise image; and superposing all the detail layers, and outputting a correction result. The method can effectively overcome the problem that image details are lost in the non-uniform correction process.

The invention relates to a method for manufacturing a face-down bonding interconnection three-dimensional electrode of an infrared focal plane array detector, which comprises the following steps of: (1) spin-coating photoresist on an infrared detector chip, exposing by using a mask plate, and developing to form a three-dimensional glue hole; (2) plating a composite metal film on the surface of the chip; (3) spin-coating a protective photoresist, performing ultraviolet light weak flooding exposure on the chip, developing to remove a thin layer of photoresist on the surface of the protective photoresist, and exposing the top composite metal film; (4) etching to remove the top composite metal film; and (5) removing photoresist by using an organic solvent to obtain the three-dimensional electrode. The method is good in process compatibility, the manufactured three-dimensional electrode is good in consistency, and the method is suitable for large-area production.

The present application provides an uncooled infrared detector readout circuit and an uncooled infrared detector. The readout circuit comprises an uncooled infrared focal plane array (10), a pixel gating module (20), a logic control module (70), and a readout circuit module (40). The uncooled infrared focal plane array (10) comprises a plurality of infrared sensitive pixels (101) arranged in an array; the pixel gating module (20) is connected to the infrared sensitive pixels (101); the logic control module (70) and the pixel gating module (20) are connected to some infrared sensitive pixels by means of a logic gate circuit (80), and the logic control module (70) is configured to be capable of controlling none of the infrared sensitive pixels connected to the logic control module (70) to be gated; and the readout circuit module (40) is capable of performing signal readout on the gated infrared sensitive pixels.

The invention provides an infrared image non-uniformity correction method, image processing equipment and a storage medium, and the method comprises the steps: subtracting estimated global fixed pattern noise from a current observation frame, obtaining a preliminary correction image, carrying out the analysis and calculation of local fixed pattern noise based on continuous multiple frames of preliminary correction images, and carrying out the secondary filtering of the local fixed pattern noise. According to the two-stage processing mechanism, the observation image is corrected based on the inherent global fixed pattern noise of the infrared focal plane array and the local fixed pattern noise generated due to scene change, time consistency and space difference are considered, and the fixed pattern noise is effectively removed. According to the method, extra calibration is not needed, the fixed pattern noise can be stably extracted, the dynamic self-adaptive capability is achieved, and the quality and usability of the infrared image in a complex environment are improved.

A readout circuit of infrared focal plane array (FPA) and a control method therefor. The readout circuit is connected to an infrared FPA, which comprises a plurality of pixels. The readout circuit comprises an integral and readout unit, a correction unit and a digital control unit. For each pixel, the correction unit determines an initial bias value based on a to-be-corrected parameter value for the pixel; the integral and readout unit determines, based on a first current corresponding to the initial bias value and a second current caused a pixel response temperature value, a responsive voltage value for the pixel; and the digital control unit adjusts, based on a comparison result between the responsive voltage value and a preset voltage value, the to-be-corrected parameter value for the pixel, to obtain an adjusted parameter value, and determines, based on the adjusted parameter value, an optimal corrected parameter value for the pixel.

The invention discloses a dynamic management method and device for power consumption of a thermal infrared imager and a medium, and the method comprises the steps: S1, dividing a reading circuit of an infrared focal plane array into a plurality of independent power domains, and configuring an independent power switch and a voltage / frequency adjustment module for each power domain; s2, collecting and analyzing an output signal of each pixel of the infrared focal plane array in real time; s3, dynamically controlling the power supply state of each power domain based on the analysis result; and S4, adjusting the global bias voltage and the global clock frequency based on the overall working mode and the scene content prediction result of the thermal infrared imager. Through a local and global combined control strategy, invalid energy consumption is greatly reduced, and the cruising ability of the thermal infrared imager is remarkably improved.

The present invention discloses a timing editing method and test system for testing infrared focal plane array devices. The method includes: decomposing the timing based on the timing minimum unit as a reference, decomposing to obtain a set of timing minimum units, selecting and defining the output interface corresponding to each timing minimum unit; determining the required timing minimum unit according to the test requirements, sorting and reorganizing the determined timing minimum units according to the analysis results based on the input operation formula through semantic analysis, and obtaining the driving timing; determining the driving timing based on the test requirements, completing the timing editing if it meets the requirements, otherwise re-editing the driving timing. The present invention can simplify the timing editing operation used in infrared focal plane array device testing, making the timing editing universal. When different devices require different driving timings, editing the timing is simpler, and adjustment during the test process can be more easily achieved, making it easy to operate.

The invention discloses an infrared focal plane array MEMS chip and a preparation method thereof. The chip comprises a readout circuit wafer, a getter module arranged on the readout circuit wafer and a suspended pixel structure located above the getter module. The preparation method comprises the following main steps: after a medium structure with a gap ring and a top micropore is formed, melting and leveling a low-melting-point material at a high temperature, depositing a getter body through the micropore, then sealing the getter body, and finally synchronously forming a suspended pixel structure and a suspended getter structure through a release process. The getter module is integrated below the pixel, the chip is sealed and protected in the whole chip manufacturing process, the low-melting-point material can be leveled, exposed and activated through heating after packaging, the packaging vacuum degree and reliability are remarkably improved, and meanwhile device miniaturization is facilitated.

According to the first electrode structure of the infrared focal plane detector chip and the preparation method, an N-type substrate forms a junction in a diffusion or ion implantation mode, and a mesa structure is prepared and formed through wet etching or dry etching; the electrode layer is directly prepared on the table top of the substrate material and forms ohmic contact with the table top of the substrate; the passivation layer is of a double-layer passivation film structure, and the indium column layer is prepared through photoetching development, a coating machine and a stripping process and is in direct contact with the exposed electrode layer; the infrared focal plane array photoelectric sensor is based on mature semiconductor processes such as magnetron sputtering, photoetching and wet etching, does not need to add special equipment, can directly adapt to an existing production line, reduces the cost of technology upgrading and industrial application, and lays a foundation for large-scale application of low-cost, large-size and small-pixel infrared focal plane array photoelectric sensors.

The application discloses a non-refrigeration infrared focal plane dual-channel column-level readout circuit and method, relates to the technical field of infrared focal plane array detector, and solves the problem of frame frequency reduction of a non-refrigeration infrared focal plane array detector under a large array. The technical scheme is as follows: the circuit comprises a mirror bridge circuit, a pixel array biasing circuit and a pixel array; the mirror bridge circuit is used for providing a bias voltage for the pixel array biasing circuit; the pixel array biasing circuit is used for providing a bias current for the pixel array; the pixel array biasing circuit comprises a first channel-level biasing circuit and a second channel-level biasing circuit; and a microbolometer gating switch is used for changing on-off timing, so that the microbolometer unit needing to be read out sequentially generates a detection output signal through the first channel-level biasing circuit or simultaneously generates a detection output signal through the first channel-level biasing circuit and the second channel-level biasing circuit, and adjustment of the readout frame frequency of the circuit is realized.

The invention relates to the technical field of infrared focal plane detectors, and provides a mesa type infrared focal plane array and a mesa electrode preparation method. The array comprises a pixel electrode area which is provided with a plurality of pixel table tops serving as pixel electrodes, and the pixel table tops are separated by first isolation grooves with the width smaller than the preset width and the depth larger than the preset depth; the public electrode area is provided with a plurality of public electrode table boards separated by first isolation grooves or second isolation grooves, at least one second isolation groove is formed around each public electrode table board, the width and the depth of the second isolation groove are both larger than those of the first isolation groove, the first isolation groove and the second isolation groove are synchronously obtained through one-time etching, and the bottom of the first isolation groove of the public electrode area is provided with a plurality of second isolation grooves. Conductive metal is deposited on the bottom and the side wall of the second isolation groove and the table surface of the common electrode, so that the common electrode is led to the table surface from the bottom of the epitaxial material. The objective of the invention is to solve the problem that an infrared focal plane array in the prior art is difficult to give consideration to large tabletop duty ratio, small transverse diffusion current and stable conductive path.

Techniques are provided for facilitating infrared imaging device coupling systems and methods. In one example, an infrared imaging device includes a printed circuit board (PCB) having a recess defined therein. The infrared imaging device further includes a conductive layer disposed within the recess and configured to provide a thermal path. The infrared imaging device further includes an infrared focal plane array (FPA) disposed at least partially within the recess and disposed on and thermally coupled to the conductive layer. The infrared FPA includes a detector array comprising a plurality of infrared detectors. Each infrared detector is configured to detect electromagnetic radiation. The infrared FPA further includes a readout circuit configured to perform a readout to obtain image data from each of the plurality of infrared detectors. The readout circuit is disposed on the conductive layer. Related methods and systems are also provided.

An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.

This invention relates to the field of infrared photoelectric detection, and particularly to a method for detecting defective elements in an infrared focal plane array based on infrared radiometric calibration data. The method includes: aligning an infrared imaging system with a calibration blackbody; acquiring image grayscale values ​​at different calibration blackbody temperatures and integration times; calculating the radiance values ​​corresponding to different temperatures of the calibration blackbody; fitting calibration coefficients for each pixel based on the image grayscale values ​​and radiance values; calculating the average calibration coefficient of all pixels based on the calibration coefficients of each pixel; calculating the coefficient offset of each pixel based on the average calibration coefficient of all pixels; calculating the coefficient offset ratio of each pixel based on the coefficient offset; and identifying pixels whose coefficient offset ratio meets preset abnormal conditions as defective elements. This method achieves dynamic and high-precision identification of defective elements through radiometric calibration at multiple temperature points and multiple integration times, improving the adaptability and reliability of the infrared imaging system.

This invention relates to the field of infrared focal plane array (FLAS) chip technology, specifically to an infrared FLAS chip and its fabrication method. The FLAS chip includes a readout circuit and a photosensitive substrate. A pixel array, comprising multiple pixels, is disposed on the photosensitive substrate. Each pixel is flip-chip connected to the readout circuit via interconnect units. At least some interconnect units include bumps and limiting connection components. The limiting connection components include a dielectric film and a slotted connector. A through-hole is formed in the dielectric film, and the slotted connector is disposed within the through-hole. The bumps are inserted into the slotted connector and soldered to it. One of the bumps and the limiting connection components is disposed on a corresponding pixel, and the other is disposed on the readout circuit. This invention effectively prevents the bumps from slipping or misaligning during flip-chip soldering. Furthermore, the limiting connection components do not encroach on the pixel area and are unaffected by pixel pitch, making it particularly suitable for infrared FLAS chips with ultra-small pixel pitches. The use of a dielectric film allows for precise fabrication of the through-hole, avoiding pattern distortion.

The embodiment of the utility model provides test equipment, which is used for testing an infrared focal plane array detector and comprises a test tool, a shading baffle and a driver, the number of the testing tools is multiple, the testing tools are arranged at intervals, the testing tools are provided with setting areas, the setting areas are used for setting infrared focal plane array detectors, the shading baffle is provided with multiple testing auxiliary areas, the testing auxiliary areas comprise shading areas and light-transmitting areas, and the driver is in driving connection with the shading baffle. The shading baffle is driven to be switched between a light transmitting position and a shading position; under the condition that the shading baffle is located at the shading position, the testing tools are opposite to the shading areas in a one-to-one correspondence manner; under the condition that the shading baffle is located at the light-transmitting position, the testing tools are opposite to the light-transmitting areas in a one-to-one correspondence mode.

The invention discloses a high-sensitivity infrared multispectral imaging intelligent sensor, a refrigeration type medium-short wave infrared imaging detector comprises a metal Dewar, an MCT infrared focal plane array, a CMOS readout circuit and a Stirling cryocooler, the MCT infrared focal plane array and the CMOS readout circuit are arranged in the metal Dewar, and the Stirling cryocooler is arranged below the metal Dewar; the non-refrigeration type long-wave infrared imaging detector is a heat radiation type detector and comprises an absorption layer, a heat sensitive layer, supporting legs, an interconnection wire and a substrate, the absorption layer absorbs infrared radiation and then converts the infrared radiation into heat energy, the temperature of the sensitive layer changes, the change of resistance caused by the change of the temperature and the change of resistance value are converted into current or voltage signals, and the current or voltage signals are extracted. According to the invention, medium-short wave and long wave infrared combined imaging detection is adopted, the infrared spectrum is subdivided by adopting the multispectral filtering rotating wheel, the gas spectrum discrimination degree is high, and the imaging signal-to-noise ratio is high.

The application provides an infrared focal plane array readout circuit and a correction method, which comprises: a pixel circuit for receiving an infrared radiation signal and converting it into a pixel current; a bias current circuit for generating a bias current; a pixel voltage bias circuit for generating a first voltage varying with an ambient temperature and a second voltage not varying with the ambient temperature, and adding the first voltage and the second voltage as a pixel bias voltage output by the pixel voltage bias circuit, the pixel bias voltage serving as an input voltage of the pixel circuit and the bias current circuit; and a signal processing circuit receiving the pixel current and the bias current, integrating a current difference between the pixel current and the bias current, and converting an integration result into a voltage signal as an output signal of the non-refrigeration infrared focal plane readout circuit. The application can realize compensation of the drift of the response rate of the non-refrigeration infrared focal plane with the ambient temperature, improve the temperature stability of the response rate, and further improve the temperature measurement accuracy.

The utility model provides a high-density infrared photoelectric focal plane array sensor, which comprises a sensitive element chip and a through hole element which are connected in an overlapped manner, the sensitive element chip comprises a first substrate, a plurality of sensitive elements arranged on the first substrate and a plurality of pairs of electrodes arranged at the two ends of each sensitive element, the through hole element comprises a second substrate, a plurality of pairs of through holes formed in the second substrate and metal filling columns arranged in the through holes, each pair of electrodes corresponds to one pair of through holes in a one-to-one mode, and the ends of the metal filling columns are connected with the electrodes in a welded mode. According to the utility model, the sensitive element chip and the through hole element are respectively manufactured, and then the electrode of the sensitive element chip corresponds to the through hole and is connected with the through hole through a flip-chip bonding method, so that the vertical interconnection between the sensitive element and the through hole is realized; according to the utility model, the structure is simple, not only is the preparation process flow of the area array sensitive element simplified, but also small-size and high-density focal plane array integration is realized.

This disclosure provides a heterogeneous integrated dual-color infrared focal plane array chip, comprising: a dual-color readout circuit wafer (1), including a dual-color readout circuit substrate (11), and a top electrode contact (121) and a common electrode contact (122) spaced apart on the dual-color readout circuit substrate (11); a first detector wafer (2), bonded to the upper surface of the dual-color readout circuit wafer (1); a second detector wafer (3), after the substrate of the first detector wafer (2) is removed, bonded to the upper surface of the first detector wafer (2), and after the substrate of the second detector wafer (3) is removed, forming a heterogeneous integrated wafer with the first detector wafer (2); a pixel mesa array and a common electrode region, etched and formed on the first detector wafer (2) and the second detector wafer (3).

The application provides a type II superlattice mid-wave infrared focal plane array chip manufacturing method and an infrared detector, and belongs to the field of infrared focal plane array chips; solves the problem that the surface leakage current of the infrared focal plane array chip is large due to the deep mesa etching depth in the prior art; the method comprises the following steps: epitaxial material growth and cleaning; hard mask deposition, mesa lithography and etching: the required mesa pattern is obtained on the hard mask through the lithography technology, and then the epitaxial material is etched to form the mesa pattern, the mesa pattern comprises an upper electrode region and a lower electrode region, the upper electrode region is etched to the boundary between the barrier layer and the absorption zone, and the lower electrode region is etched to the lower ohmic contact layer; metal electrode manufacturing; the connection piece is connected with the readout circuit on the metal electrode, and the manufacturing of the infrared focal plane array chip is completed; and the application is applied to the type II superlattice mid-wave infrared detector.