Capacitive MEMS non-refrigerated infrared detector and preparation method thereof

An uncooled infrared and detector technology, applied in electric radiation detectors, piezoelectric/electrostrictive/magnetostrictive devices, televisions, etc., can solve problems such as low sensitivity and slow response speed, and achieve improved uniformity, Improves reliability and contributes to a wide range of applications

Inactive Publication Date: 2009-10-21
PEKING UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the current commercial thermal sen...

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  • Capacitive MEMS non-refrigerated infrared detector and preparation method thereof
  • Capacitive MEMS non-refrigerated infrared detector and preparation method thereof
  • Capacitive MEMS non-refrigerated infrared detector and preparation method thereof

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Embodiment Construction

[0039] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0040] The pixel structure of the capacitive micromachined infrared detector focal plane array of the present invention is as follows: Figure 1-4 shown. Including: infrared absorbing surface 1, upper electrode plate 2, lower electrode plate 3, electrical interconnection leads, thermal isolation outrigger part 5, deformed outrigger 6 and anchor point 4, the infrared absorbing surface can be formed by a kind of absorbing infrared and has smaller Material preparation for thermal conductivity and thermal expansion coefficient, such as Si 3 N 4 , SiC, can also be composed of a structural material with a small thermal conductivity and thermal expansion coefficient and an infrared absorbing material covering it, and a release hole 8 is provided on the infrared absorbing surface. The infrared absorbing surface is fixed on the substrate by cantilever...

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Abstract

The invention discloses a capacitive MEMS non-refrigerated infrared detector and a preparation method thereof, which belong to the technical field of infrared photo-detection and microelectronic mechanical systems. The infrared detector comprises a micro-cantilever array, a circuit for reading out cantilever deformation and a substrate for supporting the cantilever array, wherein the micro-cantilever array forms an infrared focal plane array of the detector, and each pixel has a bi-material cantilever structure which is fixed on the substrate through an anchor point; and the cantilever structure is provided with a plate electrode, the substrate is provided with another plate electrode, the two plate electrodes form a capacitor structure together, and the variation of a capacitance signal of the capacitor structure is read out by the circuit positioned on the substrate for reading out the cantilever deformation. The preparation method can achieve the monolithic integration of the focal plane array and the reading circuit, and is applicable for mass production.

Description

technical field [0001] The invention belongs to the technical field of infrared detection and MEMS-microelectronic mechanical systems (MEMS-microelectronic mechanicalsystems) processing technology, and relates to infrared radiation imaging technology, in particular to a capacitive MEMS uncooled infrared detector and a preparation method thereof. Background technique [0002] Infrared sensors include photoelectric infrared sensors and uncooled thermal sensors. Photoelectric infrared sensors work directly by using infrared photons to excite electrons to transition between energy levels. Now photoelectric infrared sensors have developed relatively maturely and reached a high level. Detection accuracy, but due to the interference of hot carrier dark current, this type of sensor needs to work at low temperature, requiring expensive and bulky refrigeration system. In contrast, uncooled infrared sensors can work at room temperature and do not require refrigeration equipment, which ...

Claims

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Application Information

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IPC IPC(8): G01J5/34B81B7/02B81C1/00
Inventor 于晓梅潘程
Owner PEKING UNIV
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