Visible-short wave infrared detector and preparation method thereof

A short-wave infrared and detector technology, applied in the field of photon detection, can solve problems such as differences in thermal expansion coefficients, poor reliability, and limited stability of infrared detection systems, achieving low cost and high integration

Active Publication Date: 2018-07-31
江苏联格科技有限公司
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Problems solved by technology

There is a large difference in thermal expansion coefficient between the two, and the resulting thermal stress leads to poor reliability of the device under temperature shock and cyclic operation, and severely limits the stability of the infrared detection system with a large pixel array

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  • Visible-short wave infrared detector and preparation method thereof
  • Visible-short wave infrared detector and preparation method thereof

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Embodiment Construction

[0012] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0013] The CMOS process of Si is very mature and can easily realize CCD cameras with megapixels or even tens of millions of pixels. Silicon is also an ideal material for preparing visible light detectors. The introduction of Sn, Ge into the Ge material lattice 1-x Sn x The band gap will be narrowed. The band structure and Sn composition change law are as follows: Eg(Ge 1-x Sn x )=Eg Ge (1-x)+Eg Sn x-bx(1-x), where Eg Ge And Eg Sn Are the direct band gap energy of Ge and Sn, respectively, and b is the bending coefficient, which is about 2.42. For example, when the Sn content is 8.5%, Ge 1- x Sn x The direct band gap energy of the material is about 0.51eV, and the detection wavelength can reach 2.4μm. It is a good s...

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Abstract

The invention relates to a visible-short wave infrared detector and a preparation method thereof. The preparation method comprises the steps of forming a P-type doping region and an N-type doping region of a silicon visible light detector on the back of a silicon substrate; forming a protective layer on the P-type doping region and the N-type doping region; epitaxially growing a germanium-tin light absorption layer of a germanium-tin infrared light detector on the front of the silicon substrate; removing the protective layer on the P-type doping region and the N-type doping region so as to complete the fabrication of the silicon visible light detector and the germanium-tin infrared light detector. The preparation method not only can utilize the advantages of low cost, high reliability andthe like of the traditional Si CMOS process, but also can realize monolithic integration of a photoelectric detector in a real sense.

Description

Technical field [0001] The invention relates to the field of photon detection, in particular to a visible-shortwave infrared detector and a preparation method thereof. Background technique [0002] The common infrared band atmospheric window can be divided into three windows of 1~3μm, 3~5μm and 8~14μm. Among them, the 1~3μm window is also called short-wave infrared band, which can be used not only for military and security systems such as low-light night vision and precision guidance, but also for civilian applications such as space remote sensing, security, and biomedicine. Use In x Ga 1-x Shortwave infrared detectors made of As material have high sensitivity and detection rate, and have been extensively studied. With the continuous deepening of shortwave infrared research, the requirements for detectors have also been continuously improved. One is to develop a larger focal plane array, and the other is to expand in two directions, longwave and shortwave. To achieve megapixel-...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/101
CPCH01L31/1013H01L31/1804Y02P70/50
Inventor 郑军成步文王启明
Owner 江苏联格科技有限公司
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