57 results about "Short wave infrared" patented technology

The application belongs to InGaAs infrared focal plane detector, and provides a preparation method of a new type of InGaAs short-wave infrared detector. After growing P electrode, N electrode, P type metal and N type metal to form ohmic contact, growing connecting layer metal, thinning and polishing InP substrate to form a flat mirror surface, corresponding photoetching on a readout circuit wafer, growing lower electrode metal and indium column, and then carrying out metal stripping; InP epitaxial wafer PDA and readout circuit are uniformly glued, protected, and diced to form independent single; PDA and readout circuit are inversely interconnected to form an infrared detector, and secondary polishing treatment and growth of anti-reflection coating are carried out. The indium column is grown at the end of the readout circuit, and one-step photoetching can be completed. The PDA chip end can reduce the growth of the lower electrode, the growth of the indium column, and the growth of the corresponding passivation layer and the opening of the passivation layer. The process steps are reduced, the probability of defects is reduced, the production cost is reduced, and the final yield of the product is further improved.

A wearable device includes an image sensor having a matrix of pixels. Each pixel includes at least one light emitter and at least one photosensor. A first group of pixels of the matrix includes one light emitter configured to emit wavelengths selected among near and short-wave infrared wavelengths. A second group of pixels of the matrix includes a photosensor sensitive to the wavelengths selected among near and short-wave infrared wavelengths.

An optical system includes an external common entrance pupil, a front multispectral objective lens group configured to receive and direct electromagnetic radiation in the multispectral infrared wavelengths, and a first beamsplitter configured to receive electromagnetic radiation from the front objective lens group. The first beamsplitter further is configured to reflect electromagnetic radiation in the short wave infrared (SWIR) wavelength and the middle wave infrared (MWIR) wavelength and to transmit electromagnetic radiation in the long wave infrared (LWIR) wavelength. The optical system further includes a second beamsplitter configured to receive electromagnetic radiation from the first beamsplitter. The second beamsplitter further is configured to reflect electromagnetic radiation in the SWIR wavelength and to transmit electromagnet radiation in the MWIR wavelength. The optical assembly further includes a spectral hybrid optics groups configured to direct spectrum beams in the LWIR wavelength band, the MWIR wavelength band and the SWIR wavelength.

The application provides a short-wave infrared fluorescent ceramic and a preparation method and application thereof. The short-wave infrared fluorescent ceramic has a chemical composition of Y 2‑z (Ca 1‑x M x )Al 4‑y SiO 12 :yCr 3+ ,zEr 3+ ; wherein M is one or more of Mg, Sr and Ba elements. The preparation method comprises the following steps: S1, taking oxides, nitrates, halides or carbonates containing Y, Ca, M, Al, Si, Cr and Er elements as raw materials according to the chemical composition and the metering ratio, wherein M is one or more of Mg, Sr and Ba, and then mixing the raw materials to obtain a uniform mixture; S2, subjecting the uniform mixture to a melting treatment, and then cooling to obtain a transparent glass sample; and S3, placing the transparent glass sample into a tube furnace with an atmosphere, and subjecting the transparent glass sample to a heat treatment at 900-1300 DEG C under normal pressure, and then sequentially cooling and polishing to obtain the short-wave infrared fluorescent ceramic. The short-wave infrared fluorescent ceramic prepared by the application has high transmittance, a wide emission spectrum coverage range, high luminescent quantum efficiency and excellent thermal stability.

The present application relates to the technical field of image enhancement, in particular to a remote sensing image enhancement method for forest fire monitoring, which specifically comprises the following steps: firstly, pre-processing multispectral images, digital elevation models and fire point labels to obtain multi-source training samples; then, performing differentiated enhancement on different bands in combination with terrain shadow intensity, normalized burning ratio and short-wave infrared local anomaly response; then, generating a spatially restricted fire line expansion area based on wind direction, slope direction and vegetation conditions, and performing thermal radiation enhancement and smoke plume shielding modulation to obtain physically simulated augmented samples; finally, constructing a double-branch dynamic receptive field network for decoupling fire points and smoke, and jointly training the network using focal loss and boundary consistency loss, and outputting a pixel-level fire danger probability map. The present application can improve the detection accuracy of forest fires under complex terrain and the enhanced results can be directly used for fire point detection or auxiliary manual interpretation.

The application discloses a vegetation dark background aerosol inversion method and device based on physical and machine learning fusion and a medium, relates to the field of aerosol optical depth inversion, and comprises the following steps: constructing a sample library based on AVHRR / MERSI observation data and MODIS surface reflectance product data; adopting a machine learning algorithm to establish a surface reflectance relationship model with medium / short-wave infrared apparent reflectance, NDVI and multiple angle data as input and label red band surface reflectance as output; determining the label red band surface reflectance by adopting the surface reflectance relationship model for satellite observation data to be processed, calculating the red band apparent reflectance, and then obtaining a set of dark background pixels to be inverted; for any dark background pixel to be inverted, a preset lookup table is called, the red band apparent reflectance is matched with the apparent reflectance in the preset lookup table, and the aerosol optical depth is determined. The application can realize high-precision AOD inversion.

This application discloses an infrared sensing device and a display device, belonging to the field of sensor technology. The infrared sensing device includes: an infrared emitter for emitting short-wave infrared light of a predetermined wavelength; a semiconductor structure, wherein the transparent band of the semiconductor structure includes the predetermined wavelength, and the semiconductor structure is used to allow the short-wave infrared light of the predetermined wavelength emitted by the infrared emitter to pass through; and an infrared sensing array located on one side of the semiconductor structure for sensing the short-wave infrared light of the predetermined wavelength passing through the semiconductor structure. This application can isolate environmental noise, improve the signal-to-noise ratio, and reduce costs.

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

The application discloses a short-wave infrared high-NA achromatic superlens design method based on Latin square partition and hybrid optimization, and belongs to the technical field of micro-nano optics. Firstly, an electromagnetic response database of a silicon dioxide substrate-silicon nanometer cylindrical unit is constructed, covering a 2.1-2.3-micron wavelength band; then equal-area ring-belt-fan partition is adopted in combination with Latin square wavelength distribution, so that multiple wavelengths are uniformly distributed in the ring-belt and sector directions; a high-NA evaluation function containing a radial quadratic position weighting factor is constructed, so as to strengthen the optimization weight of the edge phase of the lens; finally, a genetic algorithm-pattern search three-stage hybrid collaborative optimization is executed, and the optimal nanometer structure size distribution is obtained through global search, local convergence and pixel-level discrete fine adjustment. The application can significantly suppress wavelength crosstalk and chromatic aberration, realizes broadband achromatic focusing under the condition of a numerical aperture NA=0.915, and the focal length variation coefficient is only 3.45%, the focused light spot is close to the diffraction limit, and the application is suitable for short-wave infrared high-NA imaging applications such as gas detection and environmental monitoring.

The present application belongs to the technical field of remote sensing image recognition, and discloses a multi-source remote sensing spodumene recognition method based on spectral index and double-branch neural network. The method comprises the following steps: field sample collection, remote sensing image acquisition and pretreatment; calculating the spodumene index based on the spectral characteristics of spodumene in the remote sensing image, and making a remote sensing index cube; constructing a double-branch neural network model based on a graph convolution network and a one-dimensional convolution neural network, recognizing the spectral characteristics and spatial distribution characteristics of spodumene, and then recognizing spodumene, and evaluating the accuracy of the recognition result. The present application solves the problem that the spectral characteristics of spodumene in visible light-near infrared and short wave infrared band remote sensing images are not obvious, which leads to difficulty in recognition. The mixed deep learning model, i.e. the double-branch neural network model, fully utilizes the graph and spectral information in the remote sensing image, and improves the recognition accuracy and efficiency of spodumene.

This invention relates to semiconductor nanoparticles containing an AgAuTe compound composed of Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles of this invention contain 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticles of this invention improve the light absorption characteristics in the long wavelength region and are appropriately compatible with the near-infrared and short-wave infrared regions. Specifically, the absorption wavelength at the long wavelength side of the absorption spectrum of the semiconductor nanoparticles of this invention is 1200 nm or more. (In the formula, x, y, and z are the atomic numbers of Ag, Au, and Te, 0.25 ≤ z / (x+y) ≤ 1. Furthermore, y / (x+y+z) > 0.10.)

This invention relates to the field of machine vision inspection technology, and discloses a high-precision chip appearance defect detection system and method based on multimodal collaborative imaging. The method includes: simultaneously acquiring visible light images, short-wave infrared images, and terahertz spectral scanning data during chip movement; extracting microscopic localization features and high-level semantic features using a hybrid architecture incorporating CNN and Transformer branches; generating a global defect feature map through feature concatenation and attention mechanisms; inputting the feature map in parallel into a classification, segmentation, and anomaly reconstruction network, simultaneously outputting defect category, pixel segmentation, and unknown anomaly identification results; and finally inputting the above multi-dimensional judgment results into a reinforcement learning-based algorithm, outputting closed-loop instructions for imaging parameter optimization and detection threshold adjustment. This invention breaks the limitations of a single visual dimension, achieving a balance between high precision and high-speed detection, and significantly improving the quality control efficiency of semiconductor production lines.

This invention discloses an ultrawideband absorber with an embedded cylinder. The absorber uses SiO2 as a substrate, with Ti layer placed above it as a transition layer. The surface of the Ti layer has periodically arranged absorption units, each including a frustum formed by a dielectric layer. The side length of the base of each frustum is consistent with the array period P. A cylindrical inlay is embedded at the central axis of the dielectric layer frustum, with its bottom tangent to the bottom surface of the dielectric layer and a metal layer on top. The top of the inlay protrudes h3 relative to the top surface of the dielectric layer. This protrusion introduces additional electromagnetic resonance, supplementing the absorption intensity in the short-wave infrared band and complementing the long-wave absorption of the dielectric layer, thus broadening the effective absorption bandwidth and enhancing electromagnetic field localization. The inlay acts as a support structure, providing a certain height to the metal layer, which facilitates light absorption by the high-loss metal layer during multiple round trips. The average absorption rate reaches 98% in the incident wavelength range of 1100nm to 3400nm, and achieves 99.7% absorption near 2500nm, independent of polarization.

This application relates to the field of fire monitoring technology and provides a multimodal remote sensing fire smoke recognition method. First, remote sensing images are input into a target detection model, and features are extracted through multiple branches to output directional detection information. These multiple branches include a first branch and a second branch. The first branch extracts features from the input visible light spectral image, near-infrared image, and short-wave infrared image respectively; the second branch extracts features from the input thermal infrared image across multiple bands respectively. The directional detection information includes the category label, geometric center point coordinates, and rotated bounding box of the fire smoke target. Then, the directional detection information is input into a SAM model to segment the input remote sensing image, outputting a segmentation mask of the fire smoke target. Finally, the attribute information of the fire smoke target region is determined based on the input segmentation mask, including the coverage area and shape attributes of the fire smoke target.

This invention discloses a compact common-aperture three-band infrared optical system, comprising an infrared optical system body, a short-wave infrared imaging component, a mid-wave infrared imaging component, and a long-wave infrared imaging component. The infrared optical system body is sequentially arranged along the light incident direction with a Cassegrain afocal system, a secondary beam-shrinking structure, a first dichroic mirror, a second dichroic mirror, a short-wave infrared imaging component, a mid-wave infrared imaging component, and a long-wave infrared imaging component. All imaging components on the infrared optical system body are arranged in the axial space behind the primary mirror. The two dichroic separations achieve optical path separation, eliminating the need for complex folding and reflection structures, significantly reducing volume and weight, providing strong adaptability, simple processing and assembly, all-weather multi-feature detection, and simultaneously acquiring reflection features, high-temperature features, and room-temperature thermal radiation features, thereby improving target recognition rate.

The application provides a method for in-orbit calibration and reflectivity determination of a Mars in-situ exploration spectrum. The method comprises the following steps: under the same detection condition, a first calibration plate and a second calibration plate carried by a short-wave infrared spectrometer in a Mars surface component detector are used to obtain a first remote sensing image pixel brightness value corresponding to the first calibration plate and a second remote sensing image pixel brightness value corresponding to the second calibration plate; a regression analysis method is used to determine the in-orbit radiation calibration coefficient ratio of each wave band according to the first remote sensing image pixel brightness value and the second remote sensing image pixel brightness value; for a target detection object, the short-wave infrared spectrometer in the Mars surface component detector is used to obtain a third remote sensing image pixel brightness value corresponding to the target detection object; and the target reflectivity is determined according to the in-orbit radiation calibration coefficient ratio and the third remote sensing image pixel brightness value.

The application discloses a short-wave infrared photoelectric detector and a manufacturing method thereof. The short-wave infrared photoelectric detector comprises a substrate structure, a first doped layer and a buried oxygen layer which are arranged in a stack; the first doped layer is a germanium layer with a first conductivity type; an absorption layer is arranged on a side of the first doped layer in the substrate structure, away from the buried oxygen layer; the absorption layer is an intrinsic germanium layer; a second doped layer is arranged on a side of the absorption layer, away from the substrate structure; the second doped layer is a III-V group material layer with a second conductivity type; and the second conductivity type is opposite to the first conductivity type. The embodiment of the application can effectively reduce the dark current of the germanium-based short-wave infrared detector.

This application relates to the field of shortwave infrared imaging technology, and provides a method and apparatus for optimizing color bands in shortwave infrared images driven by both physical data and technical data. Addressing the problem of exponentially increasing combinations of hyperspectral / multispectral bands, this method abandons the computationally expensive exhaustive training method and utilizes a hierarchical screening framework. First, a physical model is used to determine candidate bands. Then, improved statistical indices are used to quickly perform unsupervised dimensionality reduction to obtain a small number of high-potential combinations. Finally, generative validation of these high-potential combinations yields the optimal band combination. This strategy ensures the physical interpretability of band selection while significantly reducing the time cost and computational consumption in finding the optimal solution.

This application discloses a dual-channel image acquisition and processing method and a local on-orbit programming method based on a System-on-Chip (SOC). A first SOC processing unit acquires visible light images, and a second SOC processing unit acquires short-wave infrared images; both undergo preprocessing, target extraction, and JPEG compression. Both processing units utilize heterogeneous SOC chips with integrated RISC-V CPUs and FPGAs, and are independently equipped with DDR3 and SPI NOR Flash. The FPGA integrates connected component labeling and centroid extraction modules, employing a single-scan algorithm for parallel processing and directly outputting centroid coordinates at the end of a single frame scan. Local on-orbit programming uses function-level BIN splitting and CRC comparison, only programming the change modules. JPEG compression adjusts image parameters through configuration registers and automatically reloads the quantization table. This application achieves parallel acquisition of visible and infrared light, real-time centroid extraction, incremental programming, and flexible compression, suitable for aerospace attitude control and remote sensing imaging.

The application discloses a kind of high sediment concentration remote sensing inversion method and device of suspended load based on Sentinel-2 image, first, the satellite multispectral data and measured sediment concentration data of target water area are collected, and are preprocessed;Then the initial spectral feature set including the band feature combination of visible light-short wave infrared range is constructed, then the cross-validation recursive feature elimination algorithm (RFECV) is used to carry out preliminary screening from initial feature library, then according to spectral sensitivity analysis, the optimal feature subset is obtained by fine screening;Again, using random forest (RF) model is based on optimal spectral feature and sediment concentration data set training, constructs suspended load sediment concentration inversion model;Finally, the model is applied to realize the remote sensing inversion of high sediment concentration of suspended load, generates the sediment concentration time series of target water area.The present application effectively overcomes the common spectral saturation problem under high sediment concentration condition, can realize high-precision inversion in 0-45 kg / m³ concentration range, significantly improves the robustness and accuracy of suspended load high sediment concentration remote sensing inversion.

The present disclosure relates to a device (100) for emitting and detecting short-wave infrared (SWIR), intended to distinguish at least one tissue structure in a human and / or animal target tissue. The device comprises an illumination module (120) for emitting SWIR radiation in a first and a second wavelength band. The device also comprises at least one SWIR camera (130) for capturing images of the target tissue in the first and the second wavelength band, and an image processing means (150) configured to correct the captured images of the tissue by applying a correction matrix to each image, the correction matrices being designed to correct the variations in said images on the basis of at least one of the wavelength bands and of the distance of the target tissue from the illumination module.

This invention relates to the field of image recognition technology and proposes a method and system for grading vegetable waste and adapting it to insect feed based on image recognition. The method includes: radiometric calibration of hyperspectral image data to obtain a spectral image cube; extracting chromatic space deviation feature values ​​and short-wave infrared absorption peak curvature feature values ​​from the cube; performing pixel-level matching to obtain the overall spoilage level; when the overall spoilage level is "fresh and tender," performing spectral angle matching between the reflectance of the soluble sugar feature band and the palatability benchmark spectral library of yellow mealworms to obtain a first set of feed processing parameters; when it is "semi-rotten," comparing the spectral characteristics of the lignin-to-cellulose ratio with the feeding preference spectral range of white-spotted flower beetle larvae to obtain a second set of feed processing parameters; when it is "deeply rotten," generating a third set of feed processing parameters; and outputting the corresponding parameter sets to a feed formulation terminal to obtain the final feed adaptation scheme. This invention can improve the efficiency of grading vegetable waste and adapting it to insect feed.

This invention discloses a short-wave infrared detection device and method for chip packaging. The short-wave infrared detection device for chip packaging includes: a short-wave infrared camera, an optical microscope, a laser autofocus sensor, and a microscope displacement mechanism. The short-wave infrared camera and the optical microscope share a common axis. The microscope displacement mechanism is configured to drive the optical microscope to move relative to the chip package along the axis. The optical microscope has a tube lens section and an objective lens section. The laser autofocus sensor is connected to the tube lens section and has a transmission module, a sampling module, and an algorithm module. The beneficial effects of this invention are: the microscope displacement mechanism and the laser autofocus sensor work together to achieve stable focusing performance, ensure image quality, solve the imaging blur problem caused by substrate deformation exceeding the depth of field range in chip packaging, and effectively cope with thickness measurement of different degrees of warping.

This invention discloses a visible light extended InGaAs detector and its fabrication method. According to this method, an internal structure is formed from bottom to top as p... + Type-contact metal electrode, oxide nitride passivation layer, p + Type InP contact layer, n ‑ Type InGaAsP composition graded layer, n ‑ Type InGaAs absorber layer, n + A photoelectric sensor based on a composite antireflective film system of InP contact layer and nanostructure was developed, and InGaAs detectors were fabricated from it, which improved the performance of the device. It can effectively absorb light in the visible to short-wave infrared band. At the same time, by combining layered thin films and nanostructures, the composite antireflective film system was constructed using the effective medium theory and film stack formula. Compared with single-layer substrate nanostructure film layer, it can effectively reduce the surface leakage current of InP contact layer. Compared with traditional layered medium antireflection film, it also has certain wide-spectrum and wide-angle antireflection characteristics.

This invention discloses a method and platform for ultraviolet sterilization based on nighttime optical phenotypes applicable to facility agriculture. The method includes: synchronously collecting near-infrared reflectance phenotypes, ultraviolet-induced fluorescence phenotypes, short-wave infrared phenotypes, and weak-light texture features of crops at night as multimodal optical phenotype data; decoupling and feature extraction of the collected multimodal optical phenotype data, and outputting four types of quantitative indices based on disease control needs, crop growth characteristics, and optical matrix dose control requirements; constructing a three-in-one adaptive decision model of "spectral matching - precise dose control - efficiency optimization" based on the four types of quantitative indices to drive the ultraviolet LED sterilizing lamp to achieve full-dimensional precise control; providing real-time optical feedback during the ultraviolet LED sterilizing lamp sterilization process to establish a dual protection mechanism of closed-loop equipment operation and crop protection; and uploading the entire chain of data to a big data cloud platform to optimize the adaptive decision model, thereby achieving precise sterilization.

The application discloses a short-wave infrared photoelectric detector and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate structure; the substrate structure comprises a silicon substrate, a buried oxygen layer and a first doped layer which are arranged in a stack mode, and the first doped layer is a germanium layer with a first conductive type; growing an intrinsic germanium layer by homoepitaxy on the side of the first doped layer in the substrate structure away from the buried oxygen layer to form an absorption layer; growing a silicon germanium tin alloy material layer by heteroepitaxy on the side of the absorption layer away from the substrate structure to form a second doped layer; the second doped layer has a second conductive type, and the second conductive type is opposite to the first conductive type; etching and passivation treatment are performed on the second doped layer to form a groove and a passivation layer; a first electrode and a second electrode are formed on the passivation layer; the first electrode is electrically connected with the first doped layer; and the second electrode is electrically connected with the second doped layer. The embodiment of the application can effectively reduce the dark current of the germanium-based short-wave infrared detector and simplify the manufacturing process.

This invention discloses a Bi₂O₂Se / PbS quantum dot heterojunction short-wave infrared photodetector for broadband imaging and its fabrication method, belonging to the field of photoelectric detection and imaging technology. The detector is a vertically stacked heterojunction diode structure, consisting of, from top to bottom, an ITO top electrode layer, a SnO₂ electron transport layer, a PbS quantum dot light absorption layer, a Bi₂O₂Se hole transport layer, an Au bottom electrode layer, and a SiO₂ / Si support substrate. The fabrication method includes: ultrasonic cleaning of the substrate, Au bottom electrode deposition, Bi₂Se₃ sputtering and oxidation annealing, PbS quantum dot ink spin coating and annealing, SnO₂ nanocrystal spin coating, SnO₂ thin film sputtering, and ITO top electrode sputtering. This device achieves a broadband spectral response of 550–2000 nm at zero bias, with a responsivity of 0.879 A / W and a detectivity of 4.27 × 10¹² cm·Hz¹ / ²·W. – ¹ The rise / fall times are 1.58 μs and 1.65 μs, respectively. The performance is stable after 80 days of air exposure and can be applied to self-powered visible to short-wave infrared broadband imaging.

The application discloses an infrared high-transmittance normal-temperature sputtered ITO film and belongs to the technical field of transparent conductive films. The ITO film is prepared by a radio frequency magnetron sputtering technology under normal temperature conditions, a ceramic target sintered by 90 wt% and 10 wt% is used as a sputtering target material, and the sputtering process parameters are optimized, so that the average transmittance of the film in the visible light region is greater than or equal to 85%, the transmittance in the short-wave infrared band (1000-2500 nm) is 40%-90%, and the resistivity is as low as 35; the film has excellent light transmittance, conductivity and short-wave infrared high-transmittance characteristics. The application does not need high-temperature deposition conditions, has a simple process and controllable cost, can be widely applied to the fields of photoelectric devices such as solar cells, near-infrared detection devices and flat panel displays, and solves the technical problems of poor near-infrared light transmittance and high-temperature preparation of traditional ITO films.