The invention discloses a short wave/medium wave/long wave infrared detector based on InAs/GaSb class II-type superlattice materials. The detector comprises a GaSb substrate, an epitaxial structure deposited on the GaSb substrate, a passivation layer and a metal electrode, wherein the epitaxial structure sequentially comprises a GaSb buffering layer, an n-type InAs/GaSb superlattice contact layer, a first M-type InAs/GaSb/AlSb/GaSb/InAs superlattice hole blocking layer, a p-type InAs/GaSb superlattice long wave infrared absorbing layer, a first p-type InAs/GaSb superlattice contact layer, a p-type InAs/GaSb superlattice medium wave infrared absorbing layer, a second M-type InAs/GaSb/AlSb/GaSb/InAs superlattice hole blocking layer, a p-type InAs/GaSb superlattice short wave infrared absorbing layer, a second p-type InAs/GaSb superlattice contact layer and a cover layer. The detector is of a pMp-p-pi-M-n heterostructure and has the advantages of being low in crosstalk, low in dark current and high in detection rate.